DS11208 Rev. 11 - 2 1 of 3 BC807-16/-25/-40
www.diodes.com ã Diodes Incorporated
BC807-16/ -25/ -40
PNP SURFACE MOUNT TRANSISTOR
Maximum Ratings @ TA = 25°C unless otherwise specified
Notes: 1. Device mounted on ceramic substrate 0.7mm; 2.5cm2 area.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current IC-500 mA
Peak Collector Current ICM -1000 mA
Peak Emitter Current IEM -1000 mA
Power Dissipation at TSB = 50°C (Note 1) Pd310 mW
Thermal Resistance, Junction to Substrate Backside (Note 1) RqJSB 320 °C/W
Thermal Resistance, Junction to Ambient Air (Note 1) RqJA 403 °C/W
Operating and Storage Temperature Range Tj,T
STG -65 to +150 °C
·Ideally Suited for Automatic Insertion
·Epitaxial Planar Die Construction
·For Switching, AF Driver and Amplifier Applications
·Complementary NPN Types Available (BC817)
·Available in Lead Free/RoHS Compliant Version (Note 3)
·Case: SOT-23
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 3
·Pin Connections: See Diagram
·Marking (See Page 3): BC807-16 5A, K5A
BC807-25 5B, K5B
BC807-40 5C, K5C
·Ordering & Date Code Information: See Page 3
·Weight: 0.008 grams (approximate)
Mechanical Data
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic (Note 2) Symbol Min Typ Max Unit Test Condition
DC Current Gain Current Gain Group -16
-25
-40
Current Gain Group -16
-25
-40
hFE
100
160
250
60
100
170
—
250
400
600
—
—
—
—
VCE = 1.0V, IC = 100mA
VCE = 1.0V, IC = 300mA
Collector-Emitter Saturation Voltage VCE(SAT) — — -0.7 V IC = 500mA, IB = 50mA
Base-Emitter Voltage VBE — — -1.2 V VCE = 1.0V, IC = 300mA
Collector-Emitter Cutoff Current ICES ——
-100
-5.0
nA
µA
VCE = 45V
VCE = 25V, Tj = 150°C
Emitter-Base Cutoff Current IEBO — — -100 nA VEB = 4.0V
Gain Bandwidth Product fT100 — — MHz VCE = 5.0V, IC = 10mA,
f = 50MHz
Collector-Base Capacitance CCBO — — 12 pF VCB = 10V, f = 1.0MHz
A
E
JL
TOP VIEW
M
BC
H
G
D
K
C
BE
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
Features
E
B
C
SPICE MODELS: BC807-16 BC807-25 BC807-40