2N7002DW
Document number: DS30120 Rev. 20 - 2
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2N7002DW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS RDS(ON) Max ID Max
TA = +25°C
60V 7.5Ω @ V
GS
= 5V 0.23A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
• Motor Control
• Power Management Functions
Features and Benefits
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen- and Antimony-Free. “Green” Device (Note 3)
• For automotive applications requiring specific change
control (i.e.: parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF
16949 certified facilities),
please refer to the related automotive grade (Q-suffix) part.
A listing can be found at
https://www.diodes.com/products/automotive/automotive-
products/.
• This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
https://www.diodes.com/quality/product-definitions/
• An Automotive-Compliant Part is Available Under Separate
Datasheet (2N7002DWQ)
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish Annealed over Alloy 42 Lead-Frame
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (Approximate)
Ordering Information (Note 4)
Part Number
Packaging
2N7002DW-7-F
3,000/Tape & Reel
2N7002DW-13-F
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
SOT363
Top View
Top View
Internal Schematic
S
1
D
1
D
2
S
2
G
1
G
2
2N7002DW
Document number: DS30120 Rev. 20 - 2
2 of 6
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December 2020
© Diodes Incorporated
2N7002DW
Marking Information
Date Code Key
Year
1998
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
Code
J
…
H
I
J
K
L
M
N
O
P
R
S
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage V
DSS
60 V
Drain-Gate Voltage RGS
≤
1.0M
Ω
VDGR
60
V
Gate-Source Voltage Continuous
VGSS
±20 V
Pulsed
VGSS
±40 V
Continuous Drain Current (Note 6) VGS = 5V Steady
State
TA = +25°C
TA = +70°C
TA = +100
°
C
ID
0.23
0.18
0.14
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
0.23 A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
0.8 A
Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
TA = +25°C
PD
0.31
W
TA = +70°C 0.2
T
A
= +100°C 0.12
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
410 °C/W
Total Power Dissipation (Note 6)
TA = +25°C
PD
0.4
W
T
A
= +70°C 0.25
T
A
= +100°C 0.15
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
Rθ
JA
318 °C/W
Thermal Resistance, Junction to Case (Note 6) Steady State
RθJC
135 °C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
K72 = Product Type Marking Code
YM
= Date Code Marking
Y
or Y = Year (ex: H = 2020)
M
or M= Month (ex: 9 = September)
K72
K72
YM
YM
2N7002DW
Document number: DS30120 Rev. 20 - 2
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2N7002DW
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
60 70
V
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current @ TC = +25°C
@ TC = +125°C IDSS 1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage I
GSS
±10 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V
GS(TH)
1.0 2.0 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance @ TJ = +25°C
@ TJ = +125°C RDS(ON) 3.2
4.4
7.5
13.5 Ω V
GS
= 5.0V, I
D
= 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current
ID(ON)
0.5 1.0 A
VGS = 10V, VDS = 7.5V
Forward Transconductance
gFS
80
mS
VDS =10V, ID = 0.2A
Diode Forward Voltage
VSD
0.78 1.5 V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
22 50 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
11
25
pF
Reverse Transfer Capacitance
Crss
2.0
5.0
pF
Turn-On Delay Time tD(ON) 7.0 20
ns
VDD = 30V, ID = 0.2A,
RL = 150Ω, VGEN = 10V,
RGEN = 25Ω
Turn-Off Delay Time tD(OFF) 11.0 20
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2N7002DW
Document number: DS30120 Rev. 20 - 2
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2N7002DW
0
0.2
0.4
0.6
0.8
1.0
01 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 On-Region Characteristics
DS
I , DRAIN-SOURCE CURRENT (A)
D
0
1
2
3
4
5
00.2
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN CURRENT (A)
Figure 2 On-Resistance vs. Drain Current
D
6
7
0.4 0.6 0.8 1.0
0
0.5
1.0
1.5
2.0
-55 -30 -5 20 45 70 95 120 145
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
T , JUNCTION TEMPERATURE ( C)
Figure 3 On-Resistance vs. Junction Temperature
J°
V = 5.0V, I
GS D
= 0.05A
0
V , GATE TO SOURCE VOLTAGE (V)
Figure 4 On-Resistance vs. Gate-Source Voltage
GS
1
2
3
4
5
6
0 2 4 6 8 10 12 14 16 18
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
V , DRAIN-SOURCE VOLTAGE (V)
Figure 5 SOA, Safe Operation Area
DS
I , DRAIN CURRENT (A)
D
T = 150°C
T = 25°C
Single Pulse
J(max)
A
0.001
0.01
0.1
1
0.1 110 100
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
TJ = 25°C
150°C
25°C
100µs
2N7002DW
Document number: DS30120 Rev. 20 - 2
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
e
D
L
E1
b
E
F
A2
A1
ca
SOT363
Dim
Min
Max
Typ
A1
0.00
0.10
0.05
A2
0.90
1.00
0.95
b
0.10
0.30
0.25
c
0.10
0.22
0.11
D
1.80
2.20
2.15
E
2.00
2.20
2.10
E1
1.15
1.35
1.30
e
0.650 BSC
F
0.40
0.45
0.425
L
0.25
0.40
0.30
a
0°
8°
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
Y1 G
Y
X
C
Dimensions
Value
(in mm)
C
0.650
G
1.300
X
0.420
Y
0.600
Y1
2.500
2N7002DW
Document number: DS30120 Rev. 20 - 2
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2N7002DW
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