SLE D MM 4136671 0003520 265 MSEKG "SEMIKRON INC SEMIKRON Thyristors | e Vrsm | VRRM ~) ItamMs (maximum values for continuous operation) y 7 dt 4500 A 5700 A mp | SKT 1800 Itav (sin. 180; Tease =. . . ; DSC) SKT 2400 Vv Vv | V/us 2500 A (60 C) 3000 A (56 C) 1300 | 1200 | 1000 SKT 1800/12 E SKT 2400/12 E 1600 | 1400 | 1000 SKT 1800/14 E SKT 2400/14 E 1700 | 1600 | 1000 SKT 1800/16 E SKT 2400/16 E 1900 | 1800 | 1000 SKT 1800/18 E SKT 2400/18 E Symbol| Conditions SKT 1800 SKT 2400 Irav | sin. 180; (Tease = ...); DSC | 1800 A (85C) | 2400 A (75C) ItsM Ty = 25C 53 000A 55 000A Ty = 125 C 45 000A 47 000A *t Ty= 25C 14.000 000 As | 15 125 000 A2s Ty = 125 C 10 000 000 As | 11 000 000 As too | Ty= 25C: la=1A; Features c metal th _ | dig/dt = 1 A/us typ. 1 ps Hermetic metal cases wit Vy Vy 5 ceramic insulators tor D = 0,67 - VoRM typ. 2 us e Amplifying gates (di/dtjr }f = 50...60Hz 150 A/ us Capsule packages for double Ih i Ty= 25 C; typ./max. 500 mA/1 A sided cooling I Ty= 25 C; typ./max. 2AISA Shallow design with single _ oc. sided cooling tg Ty = 125 C; typ. 200 ... 300 us Off-state and reverse voltages Vr Ty= 25C; I1 = 3000 A; up to 1800 V max. 1,25V 1,37V a Vito) | Ty = 125C 0,88 V 0,88 V Typical Applications tr Ty = 125 C 0,124 ma 0,164 ma . eg tor machine tools) Ipp, IRD vw =1 25 C; Von = VprM ; 100 mA 400 mA Controlled rectifiers RD = VRRM m m (e. g. for battery charging) Ver Ty= 25C 3V AC controllers _ (e. g. for temperature control) a i ~ ie C cosy Soft starters for AC motors iD y= , lap Ty = 125 C 10 mA Rihie cont. DSC 0,015 0,0105 sin. 180; DSC/SSC c 0,0155/0,0330 | 0,0110/0,0240 rec. 120; DSC/SSC 0,0165/0,0345 | 0,0118/0,0250 Riheh DCS/SSC. 0,003/0,006 0,002/0,004 Ty ~ 40... +125 C Tstg 40 ... +130 C F SI units 27 ... 34 KN 37 ... 47 KN US units 6000 ... 7600 Ibs./8000 ... 10000 Ibs w | i kg 1,7 kg Case | B19 B20 by SEMIKRON B3-61SLE D MM 4136671 0003521 171 MSEKG ~ SEMIKRON INC T-25~-21 __ 6 wwt SKT 1800 kW 5 1 0.40 1 c/w Pray Pray % IrAV 1 2 3 KA 0 Tam 50 100 150 Fig. 1 a Power dissipation vs. on-state current and ambient temperature 10 ww|_SKT 2400 kW 8 2 Pray Pray 0 I 0 lay 1 2 3 kA 0 Tamm 50 100 160 Fig. 1b Power dissipation vs. on-state current and ambient temperature 4 2 kA SKT 1800 kA SKT 1800 rec.180 T BDSG 3; sin. 15 0.5 Itav tray 0 0 9 Tone 50 100 100 Fig. 2a Rated on-state current vs. case temperature Fig. 2b Rated on-state current vs. case temperature B3--62 : ~ @ by SEMIKRONSLE D MM 4136671 0003522 038 MESEKG SEMIKRON INC SEMIKRON T~25-21 25 7 SKT 2400 kA g SKT 2400 4 DSc 2 ssc sin.180 1 0.5 ITav ITav 95 ry 9 Tease 60 100 Cc 150 Tease 50 100 Cc 150 Fig. 2c Rated on-state current vs. case temperature Fig. 2d Rated on-state current vs. case temperature 100 20,50 I acl SKT 1800 cl SKT 1800 kW CEE OL bE Er 50/--SKT 2400 8 | Zepysl*C/KWI ssc Ty = 125C 15 sn. 0 jos 1.0 [ 4.0 | 2.0 20 1200.8 4514.3 [2.5 30+ 60%20|2.8) 25} 32 30}35 40 4.5 15.0 410 10 5 Dsc 2 Z, a, {thhe 1 1 2 5 10 20 50 A/is 100 10-3 t 10-2 19-1 40 ols 402 Fig. 3 Recovered charge vs. current decrease Fig. 4a Transient thermal impedance vs. time 15, 36 0.04 td c|~SKT 2400 "cS SKT 1800 kW Ww 6 Zz if C/kW] reo. (ent: 30 1 sso sn. 10 0.8 1054 . 07/13} 42} 20 0.03 (Rinjeleont = 0-032 *C/W 60% 1.8 | 2.5} 2.4 | 3.0 30'[3 35/}4.014,5 te 5 0.02 DSG +Z, dthiz. R, Zuni thle | (Rinjcteont = 0.015 *C/W 9 0.01 103 tt 10-2 4077 40 jot os 102 0 @ 30 60 go 420 150 180 Fig. 4 Transient thermal impedance vs. time Fig. 5 a Thermal resistance vs. conduction angle by SEMIKRON B3-63SLE D Ml 8236671 SEMIKRON INC OO03523 T?74 MMSEKG T2521 0.03 SKT 2400 be] 0.025 [Rinjol cont = 0-023 C/W 0.02 0.015 cont = 0.0105 *O/W Rinto 0.0 4 0 8 30 60 90 120 150 180 Fig. 5b Thermal resistance vs. conduction angle 5 xa SKT 2400 4 ty 9 VT 0,5 1 4,6 Fig. 6b On-state characteristics 30 kwl-SKT 2400 20 10 Pray 0 0 lay 2 4 6 8 kA 10 Fig. 7 b Power dissipation vs. on-state current B364 wal SKT Ir 0 ea T Fig. 6a On-state characteristics 20 kwl SKT 1800 10 Pray 5 "av Fig. 7a Power dissipation vs. on-state current Itiov) "Tem 1.8 lyguy (A) Tyye25 C] T2128 O 63000 16 _--= SKT 1800 SKT 2400 ! 55000 0.8 0.6 0.4 t ms 108 Fig. 8 Surge overload current vs. time ~ ~~ " by SEMIKRONSE D MM 4136671 0003524 900 MESEKG ~~ SEMIKRON INC SEMIKRON <_< T~25-2 1 3 21 SKT 1800 SKT 2400 107 Nu OO BO 409 Ni Wig 2 3465 107 2345 wt 2 346 10 2 345 10! 2 345 A 10? Fig. 9 Gate trigger characteristics 5 4 3 2 G 4 SKT 1800 Case B 19 z | C: Cathode terminal Dimensions in mm A: Anode terminal G: Gate terminal (yellow sleeve) HK: Auxiliary cathode terminal (red sleeve) by SEMIKRON B3-65SLE. D = 6436671 OO03525 au? MESEKG -SEMIKRON INC SKT 2400 Case B 20 JEDEC: TO-200 AF iii Cathode terminal Anode terminal Gate terminal (yellow sleeve) K: Auxiliary cathode terminal (red sleeve) EOPO B3~66 Dimensions in mm ~ by SEMIKRON