MPSA42M
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use as a video output to drive color
CRT, or as a dialer circuit in electronic telephone.
Pinning
1 = Emitter
2 = Base
3 = Collector
TO-92
.022(0.56)
.014(0.36)
.050
(1.27)
.148(3.76)
.132(3.36)
Typ
.190(4.83)
.170(4.33)
.100
(2.54)Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.190(4.83)
.170(4.33)
.500
(12.70)Min
2oTyp
5oTyp.
2oTyp
3 2 1
5oTyp.
Dimensions in inches and (millimeters)
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 300 V
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC800 mA
Total Power Dissipation PD625 mW
Junction Temperature TJ+150 oC
Storage Temperature TSTG -55 to +150 oC
Absolute Maximum Ratings(TA=25oC)
Characteristic Symbol Min Typ Max Unit Test Conditions
Collector-Base Breakdown Volatge BVCBO 300 - - V IC=100µA, IE=0
Collector-Emitter Breakdown Voltage BVCEO 300 - - V IC=1mA, IB=0
Emitter-Base Breakdown Volatge BVEBO 6 - - V IE=10µA, IC=0
Emitter Cutoff Current IEBO - - 0.1 µA VEB=3V, IC=0
Collector-Emitter Saturation Voltage(1) VCE(sat)1 - - 0.2 V IC=20mA, IB=2mA
VCE(sat)2 - - 0.75 V IC=100mA, IB=10mA
Base-Emitter Saturation Voltage(1) VBE(sat)1 - - 0.9 V IC=20mA, IB=2mA
VBE(sat)2 - - 1 V IC=100mA, IB=10mA
hFE1 80 - - - IC=10mA, VCE=10V
DC Current Gain(1) hFE2 80 - - - IC=100mA, VCE=10V
hFE3 40 - - - IC=200mA, VCE=10V
Transition Frequency fT50 - - MHz IC=10mA, VCE=20V, f=100MHz
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
