© 2003 IXYS All rights reserved
VCES = 1700 V
IC25 = 75 A
VCE(sat) = 3.3 V
tfi(typ) = 250 ns
IXGH 32N170
IXGT 32N170
C (TAB)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
GCE
TO-247 AD (IXGH)
Features
zInternational standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
zHigh current handling capability
zMOS Gate turn-on
- drive simplicity
zRugged NPT structure
zMolding epoxies meet UL 94 V-0
flammability classification
Applications
zCapacitor discharge & pulser circuits
zAC motor speed control
zDC servo and robot drives
zDC choppers
zUninterruptible power supplies (UPS)
zSwitched-mode and resonant-mode
power supplies
Advantages
zHigh power density
zSuitable for surface mounting
zEasy to mount with 1 screw,
(isolated mounting screw hole)
DS98941B(11/03)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 µA, VGE = 0 V 1700 V
VGE(th) IC= 250 µA, VCE = VGE 3.0 5.0 V
ICES VCE = 0.8 • VCES TJ = 25°C50µA
VGE = 0 V TJ = 125°C1mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V TJ = 25°C 2.5 3.3 V
TJ = 125°C 3.0 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1700 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ1700 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C75A
IC90 TC= 90°C32A
ICM TC= 25°C, 1 ms 200 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 5 Ω ICM = 90 A
(RBSOA) Clamped inductive load @ 0.8 VCES
PCTC= 25°C 350 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum Lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260 °C
MdMounting torque (M3) 1.13/10Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 4 g
TO-268 (IXGT)
G
E
High Voltage
IGBT
C (TAB)
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 AD Outline
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 22 30 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IC(ON) VGE = 10V, VCE = 10V 120 A
Cies 3500 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 165 pF
Cres 40 pF
Qg155 nC
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 30 nC
Qgc 51 nC
td(on) 45 ns
tri 38 ns
td(off) 270 500 ns
tfi 250 500 ns
Eoff 11 20 mJ
td(on) 48 ns
tri 42 ns
Eon 6.0 mJ
td(off) 360 ns
tfi 560 ns
Eoff 14 mJ
RthJC 0.35 K/W
RthCK (TO-247) 0.25 K/W
Inductive load, TJ = 125°°
°°
°C
IC = IC90, VGE = 15 V
VCE = 0.6 VCES, RG = Roff = 2.7 Ω
Inductive load, TJ = 25°°
°°
°C
IC = IC90, VGE = 15 V
VCE = 0.6 VCES, RG = Roff = 2.7 Ω
Min Recommended Footprint
IXGH 32N170
IXGT 32N170
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
© 2003 IXYS All rights reserved
IXGH 32N170
IXGT 32N170
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
30
60
90
120
150
180
210
240
02468101214
V
C E
- Volts
I
C
- Amperes
V
GE
= 17V
7V
9V
11V
13V
15V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
8
16
24
32
40
48
56
64
0123456
V
CE
- Volts
I
C
- Amperes
V
GE
= 17V
15V
13V
11V 9V
7V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
8
16
24
32
40
48
56
64
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V
C E
- Volts
I
C
- Amperes
V
GE
= 17V
15V
13V
11V
9V
7V
Fig. 4. Dependence of V
CE(sat)
on
Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
C E (s at)
- Normalized
I
C
= 32A
I
C
= 16A
V
GE
= 15V
I
C
= 64A
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em iiter voltage
1
2
3
4
5
6
7
8
6 7 8 9 10 11 12 13 14 15 16 17
V
G E
- Volts
V
C E
- Volts
T
J
= 25ºC
I
C
= 64A
32A
16A
Fig. 6. Input Adm ittance
0
10
20
30
40
50
60
70
80
90
100
567 8910
V
G E
- Volts
I
C
- Amperes
T
J
= 125ºC
25ºC
-40ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXGH 32N170
IXGT 32N170
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
0 163248648096
I
C
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 11. Gate Charge
0
3
6
9
12
15
0 30 60 90 120 150
Q
G
- nanoCoulombs
V
G E
- Volts
V
CE
= 850V
I
C
= 32A
I
G
= 10mA
Fig. 12. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - p
F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 8. Dependence of E
off
on R
G
11
13
15
17
19
21
23
25
0 1020304050
R
G
- Ohms
E
off
- milliJoules
I
C
= 16A
T
J
= 125ºC
V
GE
= 15V
V
CE
= 1020V
I
C
= 32A
I
C
= 64A
Fig. 9. Dependence of E
off
on I
c
8
10
12
14
16
18
20
22
16 24 32 40 48 56 64
I
C
- Amperes
E
off
- MilliJoules
R
G
= 3Ω
R
G
= 15Ω - - - - -
V
GE
= 15V
V
CE
= 1020V
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Dependence of E
off
on
Temperature
8
10
12
14
16
18
20
22
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- milliJoules
I
C
= 64A
V
GE
= 15V
V
CE
= 1020V
R
G
= 3Ω
R
G
= 15Ω - - - - -
I
C
= 32A
I
C
= 16A
© 2003 IXYS All rights reserved
IXGH 32N170
IXGT 32N170
Fig. 13. Maximum Transient Thermal Resistance
0
0.1
0.2
0.3
0.4
1 10 100 1000
Pulse Width - milliseconds
R (th) J C - (ºC/W)
