MOC8101, MOC8102, MOC8103, MOC8104, MOC8105
www.vishay.com Vishay Semiconductors
Rev. 1.6, 13-Sep-11 1Document Number: 83660
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, no Base Connection
DESCRIPTION
The MOC8101, MOC8102, MOC8103, MOC8104,
MOC8105 family optocoupler consisting of a gallium
arsenide infrared emitting diode optically coupled to a
silicon planar phototransistor detector in a plastic plug-in
DIP-6 package.
The coupling device is suitable for signal transmission
between two electrically separated circuits. The potential
difference between the circuits to be coupled should not
exceed the maximum permissible reference voltages.
The base terminal of the MOC8101, MOC8102, MOC8103,
MOC8104, MOC8105 is not connected, resulting in a
substantially improved common mode interference
immunity.
FEATURES
• Isolation test voltage, 5300 VRMS
• No base terminal connection for improved
common mode interface immunity
• Long term stability
• Industry standard dual in line package
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• CSA 93751
• BSI IEC 60950; IEC 60065
• DIN EN 60747-5-5 (VDE 0884) available with option 1
Note
• Additional options may be possible, please contact sales office.
1
2
3
6
5
4
B
C
E
A
C
NC
i179009-1
ORDERING INFORMATION
MOC 8 1 0 # - # X 0 # # T
PART NUMBER CTR
BIN
PACKAGE OPTION TAPE
AND
REEL
AGENCY CERTIFIED/PACKAGE CTR (%)
10 mA
UL, CSA, BSI 50 to 80 73 to 117 108 to 173 160 to 256 65 to 133
DIP-6 MOC8101 MOC8102 MOC8103 MOC8104 MOC8105
DIP-6, 400 mil, option 6 - MOC8102-X006 - - -
SMD-6, option 9 MOC8101-X009 MOC8102-X009 - - -
VDE, UL, CSA, BSI 50 to 80 73 to 117 108 to 173 160 to 256 65 to 133
DIP-6 MOC8101-X001 - MOC8103-X001 - -
DIP-6, 400 mil - MOC8102-X016 - MOC8104-X016 -
SMD-6, option 7 MOC8101-X017T MOC8102-X017T - - -
SMD-6, option 9 - - - MOC8104-X019T -
> 0.1 mm
10.16 mm
> 0.7 mm
7.62 mm
DIP-#
Option 7
Option 6
Option 9
MOC8101, MOC8102, MOC8103, MOC8104, MOC8105
www.vishay.com Vishay Semiconductors
Rev. 1.6, 13-Sep-11 2Document Number: 83660
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
(2) Applies to wide bending option 6.
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6.0 V
Forward continuous current IF60 mA
Surge forward current t 10 μs IFSM 2.5 A
Power dissipation Pdiss 100 mW
Derate linearly from 25°C 1.33 mW/°C
OUTPUT
Collector emitter breakdown voltage BVCEO 30 V
Emitter collector breakdown voltage BVECO 7.0 V
Collector current IC50 mA
Derate linearly from 25°C 2.0 mW/°C
Power dissipation Pdiss 150 mW
COUPLER
Isolation test voltage VISO 5300 VRMS
Creepage distance 7.0 mm
8.0 (2) mm
Clearance distance 7.0 mm
8.0 (2) mm
Isolation thickness between
emitter and detector 0.4 mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1 CTI 175
Isolation resistance VIO = 500 V RIO 1012
Derate linearly from 25 °C 3.33 mW/°C
Total power dissipation Ptot 250 mW
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Junction temperature Tj100 °C
Soldering temperature (1) max. 10 s, dip soldering:
distance to seating plane 1.5 mm Tsld 260 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 10 mA VF1.25 1.5 V
Breakdown voltage IR = 10 μA VBR 6.0 V
Reverse current VR = 6.0 V IR0.01 10 μA
Capacitance VR = 0 V, f = 1.0 MHz CO25 pF
Thermal resistance Rthja 750 K/W
OUTPUT
Collector emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 5.2 pF
Collector emitter dark current VCE = 10 V, Tamp = 25 °C MOC8101 ICEO1 1.0 50 nA
VCE = 10 V, Tamp = 100 °C MOC8102 ICEO1 1.0 μA
Collector emitter breakdown voltage IC = 1.0 mA BVCEO 30 V
Emitter collector breakdown voltage IE = 100 ABV
ECO 7.0 V
Thermal resistance Rthja 500 K/W
COUPLER
Saturation voltage collector emitter IF = 5.0 mA VCEsat 0.25 0.4 V
Coupling capacitance CC0.6 pF
MOC8101, MOC8102, MOC8103, MOC8104, MOC8105
www.vishay.com Vishay Semiconductors
Rev. 1.6, 13-Sep-11 3Document Number: 83660
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Voltage vs. Forward Current
Fig. 2 - Collector Current vs. LED Forward Current
Fig. 3 - Collector Current vs. Collector Emitter Voltage
Fig. 4 - Collector Current vs. Ambient Temperature
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Current transfer ratio VCE = 10 V, IF = 10 mA
MOC8101 CTR 50 80 %
MOC8102 CTR 73 117 %
MOC8103 CTR 108 173 %
MOC8104 CTR 160 256 %
MOC8105 CTR 65 133 %
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBO
LMIN. TYP. MAX. UNIT
Turn-on time VCC = 10 V, IC = 2.0 mA, RL = 100 ton 3.0 μs
Turn-off time VCC = 10 V, IC = 2.0 mA, RL = 100 toff 2.3 μs
Rise time VCC = 10 V, IC = 2.0 mA, RL = 100 tr2.0 μs
Fall time VCC = 10 V, IC = 2.0 mA, RL = 100 tf2.0 μs
Cut off frequency fco 250 kHz
imoc8101_02
1.7
1.5
1.3
1.1
0.9
0.7
I
F
(mA)
V
F
(V)
0.1 110 100
TA = 55 °C
TA = 25 °C
TA = 100 °C
imoc8101_03
10
1
0.1
0.01
IC (Normalized)
0.1 1 10 100
IF (mA)
Normalized to IF = 10 mA
imoc8101_04
MOC8104
MOC8103
MOC8102
MOC8101
MOC8105
IF = 10 mA
25
20
15
10
5
0
I
C
(mA)
0 12345 678910
V
CE
(V)
imoc8101_05
T
A
(°C)
I
C
(mA)
10
1
0.1
- 60 - 40
- 20 0
20 40 60 80 100 120
Normalized to TA = 25 °C
IF = 10 mA
VCE = 10 V
MOC8101, MOC8102, MOC8103, MOC8104, MOC8105
www.vishay.com Vishay Semiconductors
Rev. 1.6, 13-Sep-11 4Document Number: 83660
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Collector Emitter Dark Current vs. Ambient Temperature Fig. 6 - Capacitance vs. Voltage
Fig. 7 - Switching Time Test Circuit and Waveforms
imoc8101_06
10 000
1000
100
10
1
0.1
0 20 40 60 80 100
TA (°C)
ICEO (Normalized)
Normalized to VCE = 10 V
VCE = 30 V
VCE = 10 V
imoc8101_07
20
18
16
14
12
10
8
6
4
2
0
0.01 0.1 1 10 100
C - Capacitance (pF)
f= 1 MHz
CLED
CCE
Voltage (V)
imoc81010_01
V
CC = 10 V
IC
IFRL= 100 Ω
Output
Input
10 %
90 %
Input pulse
Output pulse
ton tof f
trtf
Test circuit Waveforms
MOC8101, MOC8102, MOC8103, MOC8104, MOC8105
www.vishay.com Vishay Semiconductors
Rev. 1.6, 13-Sep-11 5Document Number: 83660
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
i178004
0.25 typ.
2.95 ± 0.5
3.555 ± 0.255
0.8 min.
7.62 typ.
0.85 ± 0.05
2.54 typ.
1 min.
0.5 ± 0.05
6.4 ± 0.1
8.6 ± 0.1
Pin one ID
6
5
4
12
3
18°
3° to 9°
7.62 to 8.81
4° typ.
ISO method A
1.2 ± 0.1
VISHAY
DIP-6A
Document Number 83263
Rev. 1.1, 10-Dec-03
Vishay Semiconductors
www.vishay.com
1
DIP-6A
Package Dimensions in Inches (mm)
i178004
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
12
3
18°
3°–9°
.300–.347
(7.62–8.81)
4°
typ.
ISO Method A
www.vishay.com
2
Document Number 83263
Rev. 1.1, 10-Dec-03
VISHAY
DIP-6A
Vishay Semiconductors
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Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
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