70502TN (KT)/71598HA (KT)/8270MH/6080MO/3187AT/3125KI/0193KI, TS(KOTO) No.781-1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching
Audio 80W Output Predriver Applications
Ordering number:ENN781G
2SA1208/2SC2910
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SA1208
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
Package Dimensions
unit:mm
2006B
[2SA1208/2SC2910]
Features
· Adoption of FBET process.
· High breakdown voltage.
· Excellent linearity of hFE and small Cob.
· Fast swtching speed.
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egatloVesaB-ot-rotcelloCV
OBC 081)–(V
egatloVrettimE-ot-rotcelloCV
OEC 061)–(V
egatloVesaB-ot-rettimEV
OBE 5)–(V
tnerruCrotcelloCI
C07)–(Am
)esluP(tnerruCrotcelloCI
PC 041)–(Am
noitapissiDrotcelloCP
C009Wm
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
˚C
˚C
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V08)–(= E0=1.0)–(Aµ
tnerruCffotuCrettimEI
OBE VBE I,V4)–(= C0=1.0)–(Aµ
niaGtnerruCCDh
EF VEC I,V5)–(= CAm01)–(=*001*004
tcudorPhtdiwdnaB-niaGf
TVEC I,V01)–(= CAm01)–(=051zHM
ecnaticapaCtuptuOC
bo VBC zHM1=f,V01)–(=0.2)5.2(Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,Am03)–(= BAm3)–(= 80.0 )41.0–( 3.0 )4.0–( V
knaRRST
hEF 002ot001082ot041004ot002
* : The 2SA1208/2SC2910 are classified by 10mA hFE are follows : Continued on next page.
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
0.5
0.6
0.5
5.0
6.0
6.0 3.0 8.5
14.0
4.7
1.45
1.45
123
0.5
No.781-2/4
2SA1208/2SC2910
Switching Time Test Circuit
IN OUT
20V
50Ω
3kΩ
5kΩ2kΩ
IB1
IB2
1µF1µF
--2V
IC=10IB1=--10IB2=10mA
(For PNP, the polarity is reversed.)
ITR03005
IC -- VCE
0 --10 --20 --30 --40 --50 --60 --70
0
--10
--20
--30
--40
--50
--60
ITR03006
IC -- VCE
0 1020304050 7060
0
10
20
30
40
50
60
ITR03008
ITR03007
--
1.0
57
--
10
523 7
--
100
523 7
10
hFE -- IC
--0.05mA
--0.1mA
--0.15mA
--0.2mA
--0.25mA
--0.3mA
IB=0
2SA1208 2SC2910
0.05mA
0.1mA
0.15mA
0.2mA
0.25mA
0.3mA
IB=0
75°C
25°C
--
25°C
2SA1208
VCE=--5V
3
2
5
3
5
2
100
7
7
hFE -- IC
2SC2910
VCE=5V
75°C
25°C
--
25°C
1.0
57 10
523 7 100
523 7
10
3
2
5
3
5
2
100
7
7
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
DC Current Gain, hFE
Collector Current, IC–mA
DC Current Gain, hFE
Collector Current, IC–mA
Continued from preceding page.
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nimpytxam
emiTNO-nruTt
no tiucriCtseTdeificepseeS1.0sµ
emiTllaFt
ftiucriCtseTdeificepseeS2.0sµ
emiTegarotSt
gts tiucriCtseTdeificepseeS0.1sµ
No.781-3/4
2SA1208/2SC2910
VCE(sat) -- IC
ITR03014
ITR03016
ITR03013
ITR03015
2357
--1.0 57 2 3 57
--10 --100 2357
1.0 57 2 3 57
10 100
0
--10
--20
--30
--40
--50
--60
--70
--80
--100
--1000
3
3
2
7
5
2
5
7
100
1000
3
3
2
7
5
2
5
7
ITR03012
Cob -- VCB
Cob -- VCB
23 57 23 57
--100--10 2 3 57 2 3 57
10010
10
1.0
3
2
5
5
7
7
10
1.0
3
2
5
5
7
7
ITR03011
ITR03009
fT -- IC
5775325732
--10 --100--1.0 5775325732
10 1001.0
5
3
7
10
100
2
5
3
2
fT -- IC
ITR03010
2SA1208
VCE=--10V
2
5
3
7
100
5
3
2
10
2SC2910
VCE=10V
2SA1208
f=1MHz
IC -- VBE
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 0
10
20
30
40
50
60
70
80
0 0.2 0.4 0.6 0.8 1.0 1.2
IC -- VBE
VCE(sat) -- IC
2SC2910
IC / IB=10
2SA1208
IC / IB=10
2SC2910
f=1MHz
75°C
25°C
--25
°C
75°C
25°C
--25°C
75°C
25°C
--25
°C
75°C
25°C
--25
°C
2SA1208
VCE=--5V 2SC2910
VCE=5V
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – mV
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – mV
Collector Current, IC–mA
Base-to-Emitter Voltage, VBE –V
Collector Current, IC–mA
Base-to-Emitter Voltage, VBE –V
PS No.781-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2002. Specifications and information herein are subject to
change without notice.
2SA1208/2SC2910
VBE(sat) -- IC
ITR03017
--1.0 --10
57 --100
722335 751.0 10
57 100
722335 75
0 20 40 60 80 100 120 160140
VBE(sat) -- IC
PC -- Ta
ITR03018
ITR03020
2SA1208
IC / IB=10
1.0
3
7
5
3
2
5
7
1.0
3
7
5
3
2
5
7
A S O
ITR03019
10 100
57 723 2
5
10
100
2
3
5
7
2
3
2
3
5
7
0
200
600
800
1000
400
2SC2910
IC / IB=10
2SA1208 / 2SC2910
1ms
10ms
100
m
s
DC Operation
ICP=140mA
IC=70mA
75°C
25°C
--25
°C
75°C
25°C
--25
°C
2SA1208 / 2SC2910
DC Single pulse
Collector Current, IC–mA
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector Current, IC–mA
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
(For PNP, minus sign is omitted.)
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Dissipation, P
C
–mW
Ambient Temperature, Ta – ˚C
