Insulated Gate Bipolar Transistors (IGBT) inoue 7F4O Ava, Vicgs , ae - nee LE "S" series with improved SCSOA capability we eee Type Voes ik Vceraat) Cie Cvs x . : max. | typ. | typ. ge as. Ty = 180C | T, = 26C| T, = 90C = Collector, E = Emitter, New Vv. A A Vv pF | pF ope - | @ = Gate, KE = Kelvin Emitter IXSH 20N60 600 40 20 25 {1800} 45 104 | 10 | 083 155 IXSH 30N60 50 30 2800 | 50 | 0.4 0.62 | 200 Fig. 3 TO-24; SMD IXSH 40N60 75 40 4500 | 90 | 0.4 0.42 300 Weight = 4 g IXSH 25N100 1000 50 25 3.5 |2800| 5011.2 | 10 | 062 | 200 ag. IXSH 45N100 75 45 2.7 | 4150] 60 | 1.0 0.42 | 300 1XSH 45N120 1200 75 45 3.0 |4275| 7011.0 | 10 | 042 | 300 S Fig. 4 TO-24 AD Weight = 6 g IXSM 20N60 1800 | 45 |o. at IXSM 30N60 50 30 2800 | 50 | 0.4 0.62 | 200 c IXSM 40N60 75 40 4500 | 90 | 0.4 0.42 | 300 ea = IXSM 25N100 1000 50 25 3.5 |2800| 50 [12 | 10 | 062 | 200 IXSM 45N100 75 45 2.7 | 4150] 60 | 1.0 0.42 300 Fig. 5a TO-2 14 AE a. ; ft Weight = 12 High Voltage BIMOSFET "Ss" Fig. 6 TO-26 1} AA Weight = 10 a ic G c E > IXBH 40N140A [1400 40 20 | 80 | 278) 2a fo14 | - | 042 | 300 > IXBH 40N160A 1600) | | IGBT with Diode, Combi Pack series with improved SCSOA-capability IXSH 20N60U1@ | 600] 40 20 | 25 [1800] 45 [0.35 | 10 | 083 | 150 IXSH 30N60U1 50 30 2800] 50/04 | 10 | 062 | 200 ~ IXSN 62N60U1@ 600 2.5 10 "0.50 c = Dp E Fig. 7 SOT-227B mi iBLOC Weight = 30 g IXSN 35N100U1 ze 1000 38 25 3.5 4500 10 0.61 Not for new design. Will be replaced by IXSH 24. Either Emitter terminat can be used as Kelvin or Main Oo