NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low inline power loss are needed in a very small outline surface mount package. 1.7A, 30 V, RDS(ON) = 0.125 @ VGS = 4.5 V RDS(ON) = 0.085 @ VGS = 10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount package. _______________________________________________________________________________ D S G Absolute Maximum Ratings T A = 25C unless otherwise noted Symbol Parameter NDS355AN Units VDSS VGSS Drain-Source Voltage 30 V Gate-Source Voltage - Continuous 20 V ID Maximum Drain Current - Continuous 1.7 A (Note 1a) - Pulsed PD Maximum Power Dissipation 10 (Note 1a) (Note 1b) TJ,TSTG Operating and Storage Temperature Range 0.5 W 0.46 -55 to 150 C 250 C/W 75 C/W THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (Note 1a) RJC Thermal Resistance, Junction-to-Case (Note 1) (c) 1997 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: NDS355AN/D Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 30 V TJ =125C 1 A 10 A IGSSF Gate - Body Leakage, Forward VGS = 20 VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA 2 V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(ON) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 1.7 A 1 TJ =125C 0.5 TJ =125C VGS = 10 V, ID = 1.9 A 1.6 1.2 1.5 0.105 0.125 0.16 0.23 0.065 0.085 6 ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID= 1.7 A 3.5 A S VDS = 15 V, VGS = 0 V, f = 1.0 MHz 195 pF 135 pF 48 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS td(on) Turn - On Delay Time tr Turn - On Rise Time td(off) tf td(on) Turn - On Delay Time tr Turn - On Rise Time td(off) tf Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge (Note 2) VDD = 10 V, ID = 1 A, VGS = 10 V, RGEN = 6 10 20 ns 13 25 ns Turn - Off Delay Time 13 25 ns Turn - Off Fall Time 4 10 ns 10 20 ns 32 60 ns Turn - Off Delay Time 10 20 ns Turn - Off Fall Time 5 10 ns 3.5 5 nC VDD = 5 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 VDS = 10 V, ID = 1.7 A, VGS = 5 V www.onsemi.com 2 0.8 nC 1.7 nC Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units 0.42 A 10 A 1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS =0.42 A (Note 2) 0.8 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. PD (t ) = T J-TA R J A(t ) = T J-TA R J C+RCA(t ) = I 2D (t ) x RDS (ON ) TJ Typical RJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 250oC/W when mounted on a 0.02 in2 pad of 2oz copper. b. 270oC/W when mounted on a 0.001 in2 pad of 2oz copper. 1a 1b Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. www.onsemi.com 3 Typical Electrical Characteristics 2 VGS =10V 6.0 DRAIN-SOURCE R DS(on) , NORMALIZED ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 10 5.0 7.0 4.5 8 4.0 6 3.5 4 2 0 3.0 0 0.5 1 1.5 2 2.5 1.8 1.6 4.0 1.2 4.5 1 5.0 6.0 0.8 7 10 0.6 0.4 3 VGS = 3.5V 1.4 0 2 I VDS , DRAIN-SOURCE VOLTAGE (V) R DS(on) , NORMALIZED 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (C) 125 150 DRAIN-SOURCE ON-RESISTANCE ID = 1.6A VGS = 4.5V 10 V GS = 4.5 V 1.8 1.6 TJ = 125C 1.4 1.2 25C 1 -55C 0.8 0.6 0.4 0 1 J Figure 3. On-Resistance Variation with Temperature. 2 3 I D , DRAIN CURRENT (A) 4 5 Figure 4. On-Resistance Variation with Drain Current and Temperature. 1.2 Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 5 V DS = 5.0V 4 I D, DRAIN CURRENT (A) R DS(ON), NORMALIZED 8 2 1.6 DRAIN-SOURCE ON-RESISTANCE 4 6 , DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 3 2 T = -55C J 25C 1 125C 0 D 1 1.5 V GS 2 2.5 3 , GATE TO SOURCE VOLTAGE (V) 3.5 4 V DS= V GS I D = 250A 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 Figure 6. Gate Threshold Variation with Temperature. Figure 5. Transfer Characteristics. www.onsemi.com 4 150 5 1.12 I S , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE Typical Electrical Characteristics (continued) I D = 250A 1.08 1.04 1 0.96 0.92 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 Figure 7. Breakdown Voltage Variation with Temperature. 0.001 0 0.2 0.4 0.6 0.8 1 VSD , BODY DIODE FORWARD VOLTAGE (V) , GATE-SOURCE VOLTAGE (V) C iss 200 100 C oss f = 1 MHz V GS = 0V GS 60 C rss 0.5 1 2 5 10 V , DRAIN TO SOURCE VOLTAGE (V) 10V 15V 6 4 2 0 0.2 VDS = 5V I D = 1.6A 8 20 30 0 2 DS Figure 9. Capacitance Characteristics. t d(on) t d(off) tf 90% 90% VOUT 10% DUT G 8 t off tr V OUT D R GEN 6 t on RL V IN 4 Q g , GATE CHARGE (nC) Figure 10. Gate Charge Characteristics. VDD VGS 1.2 V CAPACITANCE (pF) -55C 0.01 10 300 20 0.1 25C Figure 8. Body Diode Forward Voltage Variation with Source Current and Temperature. 500 40 TJ = 125C 0.1 0.0001 150 V GS = 0V 1 10% INVERTED 90% S V IN 50% 50% 10% PULSE WIDTH Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. www.onsemi.com 5 30 7 V DS = 5.0V 6 T J = -55C 100 10 I D, DRAIN CURRENT (A) 25C 5 125C 4 3 2 1 T IMI )L (ON S RD 5 3 10m 10 0.3 0.03 0 2 4 6 ID , DRAIN CURRENT (A) 8 10 0.8 1a 1b 0.4 0 4.5"x5" FR-4 Board TA = 25 oC Still Air 0 s s 0.5 1 2 5 10 V , DRAI N-SOURCE VOLTAGE (V) 20 30 50 0.1 0.2 0.3 2oz COPPER MOUNTING PAD AREA (in 2 ) Figure 14. Maximum Safe Operating Area. I D , STEADY-STATE DRAIN CURRENT (A) STEADY-STATE POWER DISSIPATION (W) 1 0.2 0.2 us s DS Figure 13. Transconductance Variation with Drain Current and Temperature. 0.6 0.01 0.1 0m 1s DC V GS = 4.5V SINGLE PULSE RJA =See Note1b TA = 25C 0.1 g 0 1m 1 FS , TRANSCONDUCTANCE (SIEMENS) Typical Electrical Characteristics (continued) 2 1.8 1.6 1a 1.2 0.4 4.5"x5" FR-4 Board o TA = 25 C Still Air VGS = 4.5V 1b 1.4 0 Figue 15. SuperSOTTM _ 3 Maximum Steady-State Power Dissipation versus Copper Mounting Pad Area. 0.1 0.2 0.3 2oz COPPER MOUNTING PAD AREA (in2 ) 0.4 Figure 16. Maximum Steady-State Drain Current versus Copper Mounting Pad Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 R JA (t) = r(t) * R JA R JA = See Note 1b 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.01 0.005 P(pk) 0.02 t1 0.01 t2 TJ - TA = P * R JA (t) Single Pulse Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 0.001 0.01 0.1 t 1 , TIME (sec) 1 10 Figure 17. Transient Thermal Response Curve. Note : Characterization performed using the conditions described in note 1b. 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