HIGH FREQUENCY TABLE 7 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains details of the available range of Zetex RF Products. Min. f; Max. Noise Figure | Coo Nee Device | Vcgo | Vceo at at or at | Prot | Gye | Package Type Cre Type Ic N Ic f Max. le Vv Vo} MHz | mA j dB | mA | MHz! pF | Min. | Max. | mA | mW | dB 2N3866 | 55 30 | 200 | 25 - | 3.0 | 15 | 200 | 50 11000/8.5} TO-39 2N4427 | 40 20 | 200 | 25 - - - | 40] | |1000] 15 | TO-39 2N2708 | 35 20 | 700} 2 | 85 2 { 200} 1.5 | 30 | 200 | 2 | 200 | 15) TO-72 2N918 30 15 | 600 | 4 | 6.0 1 60 | 1.7] 20) - 200 | 15 | TO-72 BFY90 30 15 | 1300] 25 | 5.0 1 500 | 1.5 | 20 | 125 | 25 | 200 } | TO-72 HIGH VOLTAGE TABLE 8 NPN SILICON PLANAR HIGH VOLTAGE (LOW CURRENT) TRANSISTORS The transistors shown in this table are designed for general applications where device voltages in excess of 100 volts are required. Max Vceisat) hee lego Prot Max at at at at Type Ves |Vceo| !c Tamb _ | Package | Comple- le Ig |MinjMax| Ic Veg | = 25C ment Vv Vii mA Vv mA | mA mA| pA mW PO39 300 | 300 | 500 | 0.45] 50 | 4 | 25/150) 20] 20 | 300] 800 | TO-39 | PO38 2791 120 | 100 | 1000; 1.2 | 200 | 20 | 40/120/200; 1 |100] 1000 | TO-39 - ZT92 120 | 100 | 1000} 1.2 | 200 ; 20 | 65|200/200/ 1 | 100! 1000 | TO-39 - 2793 120} 80 |1000] 0.5 ; 150] 15 | 40/120;150/ 0.1 | 80 | 1000 | TO-39 - BSY55 120} 80 | 500} 0.6 | 150 | 15 | 40/120/150| 10 | 90 | 800 | TO-39 - 2N2102 | 120] 65 |1000] 0.5 | 150 | 15 | 40 /120;150] 0.1 | 120] 1000 | TO-39 | 2N4036 TABLE 9 PNP HIGH VOLTAGE TRANSISTORS Max Vceisat) hee lego Prot Max at at at at Type Veg }Vceo} Ic Tamb _ | Package | Comple- le Ig |Min|Max| Ic Veg | = 25C ment v ViimA Vv mA | mA mA| pA Vv mW PO38 300 | 300 | 500 | 0.5 1 |0.04] 25 | 200/0.2] 0.1 | 240] 800 | TO-39 | PO39R.F. TRANSISTORS AND DIODES TABLE 1: NPN RF TRANSISTORS TO 1 WATT The transistors shown in this table are suitable for use in a wide range of high frequency applications where high f;, low noise and low intermodulation distortion features are required. Typical applications include UHF/VHF amplifiers, communications equipments, domestic and automotive remote access products, and oscilloscopes. Min. f; |Max. noise figure|C,,, or hee Prot | Gpe Device |Vcgo}Vceo at at Cre at Package Type Ic | N Io f Max. Io Type Vv V_ |MHz|mA| dB | mA |MHz| pf | Min. |Max./mA| mW | dB 2N3866 55 | 30 |200)25; | - |} - 3.0 | 15 | 200 | 50} 1000 | 8.5 | TO-39 2TX327 55 | 30 | 500] 25! _ - 3.0 | 15 ; | 50/1000 | 8.5 | E-Line ZTX3866 55 | 30 | 400) 25) | - 3.0 | 15 | 200 | 50} 1000] 8.5 | E-Line MPSH10 30 | 25 |650) 4 | - | 0.65 | 60 | | 4] 350 | | E-line FMMTH10 | 30 | 25 |650; 4] | - - 60 | | 4 | 350 | | SOT-23 2N4427 40 | 20 | 200} 25) | - 4.0 | |; |1000] 15 | TO-39 2N2708 35 | 20 | 700} 2 | 85] 2 |200/ 1.5 | 30 | 200] 2 | 200 | 15 | TO-72 BFYSO 30 | 15 /1300) 25] 5 1 |500;) 1.5 | 20 |125|25; 200 | | TO-72 2ZTX325 30 | 15 11300] 25] 5 2 |500} 0.85 ; 20 | 125/25] 350 | | E-Line BFS17 30 | 15 j1300]/ 25) 4.5 | 2 | 500] 0.85 | 20 | 125/25] 350 | | SOT-23 2N918 30 | 15 ;600/ 4/60; 1 60 | 1.7 | 20; | 3 | 200 | 15 | TO-72 FMMT918 | 30 | 15 |600| 4 | 6.0) 1 60 | 1.7 | 20 | | 3 | 350 | 15 | SOT-23 BFQ31A 30 | 15 |600| 4 | 6.0] 1 60 | 1.7 | 20 | 100] 3 | 350 | 15 | SOT-23 BFQ31 30 | 15 |600; 4/6.0] 1 60 | 1.7 | 20 | 100] 3 | 350 |} 15 | SOT-23 ZTX320 30 | 15 1600] 4 {6.0} 1 60 | 1.7 | 20; | 3 | 300 | 15 | E-Line 2TX321 30 | 15 |600} 4|6.0] 1 60 | 1.7 | 20 | | 3 | 300 | 15 | E-Line ZTX322 30 | 15 |600| 416.0] 1 60 | 1.7 | 20 |150| 3 | 300 | 15 | E-Line 2ZTX323 30 | 15 |600} 4|6.0/ 1 60 1.7 | 100} 300] 3 | 300 | 15 | E-Line 9-2