30E D mm 7929237 0029807 0 mm 7-20 | Gy, SGS-THOMSON IRF 820/Fl-821/F1 BIT, iicRoELEcTROMCS IRF 822/F1-823/Fl S G S-THOMSON N - CHANNEL ENHANCEMENT MODE 0 POWER MOS TRANSISTORS _ TYPE Voss Rosjon) ID" IRF820 500 V 3.00 25A IRF820FI | 500 V 3.00 20A IRF821 450 V 3.00 25A IRFE2iFi | 450v | 3009 | 20A c>> IRF822 B00V | 4.02 22A - IRF822Fl | 500 V 4.00 15A Se IRF823 450 V 4.02 22A WSs IRF823Fl | 450 V 4.00 15 A HIGH VOLTAGE - 450 V FOR OFF LINE SMPS ULTRA FAST SWITCHING - FOR OPERATION AT > KHz TO-220 ISOWATT220 EASY DRIVE- FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: SWITCHING POWER SUPPLIES * MOTOR CONTROLS INTERNAL SCHEMATIC o N-channel enhancement mode POWER MOS field DIAGRAM effect transistors. Easy drive and very fast switch- ing times make these POWER MOS transistors ideal for high speed switching applications. Typi- 6 cal applications include switching power supplies, uninterruptible power supplies and motor speed control. S ABSOLUTE MAXIMUM RATINGS IRF TO-220 820 821 822 823 ISOWATT220 820FIl 821Fl 822Fl 823FI Vos * Drain-source voltage (Veg = 0) 500 450 500 450 Vv Voer * Drain-gate voltage (Rag = 20 KQ) 500 450 500 450 Vv Ves Gate-source voltage +20 Vv lpm (*) Drain current (pulsed) 8 8 7 7 A lb Drain inductive current, clamped (L= 100 zH) 8 8 7 7 A __ 820 $21 822 $23 Ib Drain current (cont.) atT,= 25C 2.5 2.5 2.2 2.2 A lb Drain current (cont.) at T,= 100C 1.6 1.6 1.4 1.4 A _ 820Fl 821Fl 822Fl 823FI Ip" Drain current (cont.) atT,= 25C 2 2 1.5 1.5 A Ip" Drain current (cont.) at T,= 100C 1.2 1.2 0.9 0.9 A TO-220 ISOWATT220 Prot Total dissipation at T, <25C 50 30 Ww . Derating factor 0.40 0.24 WIC Tetg Storage temperature 55 to 150 c a Tj Max. operating junction temperature 150 C * Tj= 28C to 125C {e) Repetitive Rating: Pulse width limited by max junction temperature. = See note on ISOWATT220 on this datasheet. June 1988 1/6 325JRF 820/Fl- 821/FL- 822/Fl - 823/Fl 8G STHOMSON _ JOE >) MM 7929237 0029808 2 mm T-39-11 eee THERMAL DATA TO-220 | ISOWATT220 Rihj - case Thermal resistance junction-case max 2.5 | 4.16 C Rines Thermal resistance case-sink typ 0.5 C Rih-amb Thermal resistance junction-ambient max 80 CIW \ Maximum lead temperature for soldering purpose 300 C ELECTRICAL CHARACTERISTICS (T,acg = 25C unless otherwise specified) Parameters Test Conditions Min. | Typ. | Max. | Unit OFF Var) pss Drain-source Ip = 250 pA Ves =0 breakdown voltage for IRF820/822/820FI/822Fi 500 Vv for IRF821/823/821F1/823FI 450 Vv loss Zero gate voltage Vpsg = Max Rating 250 | pA drain current (Vgg=0) | Vpg= Max Rating x 0.8 T,= 125C |. 1000 | pA less Gate-body leakage Veg= 20 V +500] nA current (Vpg = 0) ON ak Ves (th) Gate threshold voltage Vps= Ves ID= 250 BA 2 4 Vv ID(on) On-state drain current | Vpg> Ip (on) X Rosion) max Vas= 10 V for 1RF820/821/820F1/821FI 2.5 A for IRF822/823/821F1/823Fl 2.2 A Rog (on) Static drain-source Veg= 10 V Ip= 14A on resistance for IRF820/821/820F1I/821Fl 3.0 2 for IRF822/823/822F1/823F| 40 | Q DYNAMIC Gis ** Forward Vps> Ip fon X Rog (on) max 1.0 mho transconductance Ip= 1.4 Cigg Input capacitance 400 | pF Coss Output capacitance Vps= 25 V f= 1 MHz 150 | pF Ciss Reverse transfer Veg= 0 40 | pF capacitance SWITCHING tg (on) Turn-on time Vpp= 225 V Ip= 1.0A 60 | ns r Rise time R,= 502 50 | ns ta gory) Turn-off delay time (see test circuit) 60 ns f Fall time 30 | ns Qg Total Gate Charge Vag=10 V Ip= 2.5A 19 | nc Vpg= Max Rating x 0.8 (see test circuit) 2/6 . LT. Soon 326SG S-THOMSON IRF 820/F - 821/FI - 822/FI - 823/FI 30E D mm 7929237 o029809 {= F2339-11~C*~=S ELECTRICAL CHARACTERISTICS (Continued) ~ Parameters Test Conditions Min. | Typ. | Max. | Unit SOURCE DRAIN DIODE Isp Source-drain current 25}, A Ispy (*) Source-drain current 10 A (pulsed) Vsp** Forward on voltage Isp= 2.5A Ves= 0 16] V te Reverse recovery T)= 150C 600 ns time Qa Reverse recovered Isp= 2.5A di/dt = 100 Alps 3.5 pC charge . ** Pulsed: Pulse duration < 300 ys, duty cycle < 1.5% () Repetitive Rating: Pulse v width limited by max junction temperature = See note on ISOWATT220 in this datasheet Safe operating areas (standard package) 4 10 BRFS20/1 2 10 107 Output characteristics IAD Thermal impedance (standard package) Derating curve (standard package) K Prot f) 0 50 100 TeaselC) Transfer characteristics Output characteristics IgtA) 0 50 100 150 200 VgslVI 97, SSS:THOMSON 3/6 I LESTREN SS 327IRF 820/FI_- 821/Fl - 822/FI - 823/F 1. 30E D MM 7929237 0029810 0 ma Static drain-source on resistance Transconductance Gate charge vs gate-source voltage Vost Vps=250V. Vps2400V. Normalized on resistance vs temperature GLa/t (norm) 22 06 02 420 Ty (0) 4/6 Rgston} in) Vgg=t0V Capacitance variation CtpF) 800 600 400 200 0 1" 20 30 40 VostV) Source-drain diode forward characteristics Kg tA) io! 328 $6 s- ~ THOMSON Vegi) Maximum drain current vs temperature Gut IRF822,823 2 50 1S 100 5 Te (C) Normalized breakdown voltage vs temperature 075 740 o 40 8 120 Ty (C) 1 2 3 4 97, BES ceClamped inductive test circuit VARY tp TO OBTAIN REQUIRED PEAK k guy Vos Vgs210V | E205 BVyss Fc=0.75 BVpss Switching times test circuit ADJUST R, TO OBTAIN SPECIFIED |p PULSE GENERATOR 3 : : 3 3 SC-0246 SG S=THOMSO 30E D MM 7929237 0029411 2 me SC-0242 IRF 820/FI - 821/Fl - 822/Fl - 823/Fi T-39-1] Clamped inductive waveforms ~ Ec Vos -"+} h wee ee Noe . SC-0243 Gate charge test circuit o *Vos CURRENT REGULATOR OD SAME TYPE -Vps CURRENT CURRENT SAMPLING SAMPLING RESISTOR RESISTOR SC-0244 516 329IRF _820/FI - 821/F] - 822/FI - 823/F1_ ISOWATT220 PACKAGE CHARACTERISTICS AND APPLICATION. ISOWATT220 is fully isolated to 2000V dc. Its ther- mal impedance, given in the data sheet, is optimi- sed to give efficient thermal conduction together with excellent electrical isolation. The structure of the case ensures optimum distan- ces between the pins and heatsink. The ISOWATT220 package eliminates the need for ex- ternal isolation so reducing fixing hardware. Accu- rate moulding techniques used in manufacture assure consistent heat spreader-to-heatsink capa- citance. ISOWATT220 thermal performance is better than that of the standard part, mounted with a 0.1mm mica washer. The thermally conductive plastic has a higher breakdown rating and is less fragile than mica or plastic sheets. Power derating for ISOWATT220 packages is determined by: T; - Te Rin Pp= from this Ipmax for the POWER MOS can be cal- culated: Pp Ipmax< R DS(on) (at 150C) ISOWATT DATA Safe operating areas 6/6 330 $6 30E D MM 7929237 0029812 4 Mm Thermal impedance 2S eee ee S-THOMSON T-39-11 THERMAL IMPEDANCE OF =~ ISOWATT220 PACKAGE Fig. 1 illustrates the elements contributing to the thermal resistance of transistor heatsink assembly, using ISOWATT220 package. - The total thermal resistance Rip (oy is the sum of each of these elements. The transient thermal impedance, Z,, for different pulse durations can be estimated as follows: 1 - for a short duration power pulse less than ims; Ztn< Rinsc 2 - for an intermediate power pulse of 5ms to 50ms: Zn= Rinsc 3 - for long power pulses of the order of 500ms or greater: Zin= Rinec + Rincs + Pintis-amb It is often possibile to discern these areas on tran- sient thermal impedance curves. Fig. 1 RinJ-c Rene-s Rens-amb WAV AA Derating curve oO 25 50 75 100125 Tease?)