Power Transistors
1
2SA0794, 2SA0794A 2SA0794, 2SA0794A
2SA0794, 2SA0794A 2SA0794, 2SA0794A
2SA0794, 2SA0794A (2SA794, 2SA794A)(2SA794, 2SA794A)
(2SA794, 2SA794A)(2SA794, 2SA794A)
(2SA794, 2SA794A)
Silicon PNP epitaxial planar type
For low-frequency output driver
Complementary to 2SC1567 and 2SC1567A
■Features
•High collector to emitter voltage VCEO
•Optimum for the driver stage of low-frequency and 40 W to 100 W
output amplifier
•TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■Absolute Maximum Ratings TC = 25°C
1: Emitter
2: Collector
3: Base
TO-126B Package
Unit: mm
■Electrical Characteristics TC = 25°C
Parameter Symbol Rating Unit
Collector to base 2SA0794 VCBO −100 V
voltage 2SA0794A −120
Collector to 2SA0794 VCEO −100 V
emitter voltage 2SA0794A −120
Emitter to base voltage VEBO −5V
Peak collector current ICP −1A
Collector current IC− 0.5 A
Collector power dissipation PC1.2 W
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector to emitter 2SA0794 VCEO IC = −100 µA, IB = 0 −100 V
voltage 2SA0794A −120
Emitter to base voltage VEBO IE = −1 µA, IC = 0 −5V
Forward current transfer ratio hFE1 *VCE = −10 V, IC = −150 mA 90 160 220
hFE2 VCE = −5 V, IC = −500 mA 50 100
Collector to emitter saturation voltage
VCE(sat) IC = −500 mA, IB = −50 mA − 0.2 − 0.4 V
Base to emitter saturation voltage VBE(sat) IC = −500 mA, IB = −50 mA − 0.85 −1.2 V
Transition frequency fT
V
CB
= −10 V, I
E
= 50 mA, f = 200 MHz
120 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF
Note) *: Rank classification
Rank Q R
hFE1 90 to 155 130 to 220
8.0
+0.5
–0.1
1.9
±0.1
3.05
±0.1
3.8
±0.3
11.0
±0.5
16.0
±1.0
3.2
±0.2
0.75
±0.1
0.5
±0.1
2.3
±0.2
4.6
±0.2
0.5
±0.1
1.76
±0.1
123
φ 3.16
±0.1
Note.) The Part numbers in the Parenthesis show conventional part number.
Power Transistors
2
10
3000
1000
300
100
30
–0.01 –0.03 –0.1 –0.3 –1
VCE=–10V
TC=100˚C
25˚C
–25˚C
Collector current IC (A)
Forward current transfer ratio h
FE
00–1.0–0.8–0.6–0.4–0.2
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
V
CE
=–10V
Ta=125˚C–25˚C
75˚C
Base to emitter voltage VBE (V)
Collector current IC (A)
0
6
5
4
3
2
1
18014010060200 40 80 120 160
(1)With a 100×100×2mm
Al heat sink
(2)Without heat sink
(1)
(2)
Ambient temperature Ta (˚C)
Collector power dissipation P
C
(W)
2SA0794, 2SA0794A
00–12–2–10–4–8–6
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
T
C
=25˚C
I
B
=–20mA
–2mA
–4mA
–6mA
–8mA
–18mA
–10mA
–12mA
–16mA
–14mA
Collector to emitter voltage VCE (V)
Collector current IC (A)
00–4–8–12–2–6–14–10
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
V
CE
=–10V
T
C
=25˚C
Base current IB (mA)
Collector current IC (A)
PC TaIC VCE IC IB
–0.01 –0.03 –0.1 –0.3 –1
–0.01
–0.03
–0.1
–0.3
–1
–3I
C
/I
B
=10
T
C
=100˚C
25˚C–25˚C
Collector current IC (A)
Collector to emitter saturation voltage VCE(sat) (V)
–0.01
–0.01
–0.03
–0.1
–0.3
–1
–3
–0.03 –0.1 –1–0.3
I
C
/I
B
=10
T
C
=–25˚C
25˚C
100˚C
Collector current IC (A)
Base to emitter saturation voltage VBE(sat) (V)
IC VBE VCE(sat) ICVBE(sat) IC
1 3 10 30 100
0
40
80
120
200
160
20
60
100
180
140
V
CB
=–10V
f=200MHz
T
C
=25˚C
Emitter current IE (mA)
Transition frequency fT (MHz)
–1–3–10 –30 –100
0
50
40
30
20
10
I
E
=0
f=1MHz
T
C
=25˚C
Collector to base voltage VCB (V)
Collector output capacitance Cob (pF)
hFE ICfT IECob VCB
Power Transistors
3
2SA0794, 2SA0794A
1
10
10
2
10
3
10
5
10
4
0 2001601208040 1801401006020
V
CE
=–20V
Ambient temperature T
a
(˚C)
I
CEO
(T
a
)
I
CEO
(T
a
=25˚C)
1
10
10
2
10
3
10
4
0 16040 12080 14020 10060
V
CB
=–20V
Ambient temperature T
a
(˚C)
I
CBO
(T
a
)
I
CBO
(T
a
=25˚C)
–0.001
–0.003
–1–3
–0.01
–0.03
–0.1
–0.3
–1
–3
–10
–10 –30 –100 –300 –1000
Single pulse
T
C
=25˚C
t=10ms
t=1s
I
CP
I
C
Collector to emitter voltage VCE (V)
Collector current IC (A)
ICEO TaICBO TaArea of safe operation (ASO)
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2001 MAR
