DSEI2x101-12A
Low Loss and Soft Recovery
Fast Recovery Epitaxial Diode
Parallel legs
FRED
2
3
1
4
Part number
DSEI2x101-12A
Backside: isolated
FAV
rr
tns40
RRM
91
1200
=
V= V
I= A
2x
Features / A dvantages: Applications: Package:
● Planar passivated chips
● Low leakage current
● Short recovery time
● Improved thermal behaviour
● Low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
SOT-227B (minibloc)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3000
IXYS reserves the right to change limits, conditions and dimensions. 20130703aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEI2x101-12A
n
s
38
A
T
VJ
=°C
reverse recovery time
A
52
150
255
n
s
I
RM
max. reverse recovery current
I
F
=A;100
25
T=100°C
VJ
-di
F
=A/µs600/dtt
rr
V
R
=V600
T
VJ
=°C25
T=100°C
VJ
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.87
R0.5 K/
W
R
min.
91
V
RSM
V
3T = 25°C
VJ
T = °C
VJ
m
A
15V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
50
P
tot
250
W
T = 25°C
C
RK/
W
100
960
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
2.13
T = 25°C
VJ
125
V
F0
V
1.01T = °C
VJ
150
r
F
6.1 m
Ω
V
1.61T = °C
VJ
I = A
F
V
100
1.92
I = A
F
200
I = A
F
200
threshold voltage
slope resistance for power loss calculation only
m
A
150
V
RRM
V
1200
max. re pe titiv e re verse b locki n g v ol tage T = 25°C
VJ
C
J
107
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
150
900
A
1200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
1200
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20130703aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEI2x101-12A
Ratings
abcde
YYWWZ XXXXXX
Product Marking
Logo Part No.
DateCode Assembly Code
Assembly Line
Package
T
VJ
°C
M
D
Nm1.5
mounting torque 1.1
T
stg
°C150
storage temperature -40
Weight g30
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temperatu re
Unit
M
T
Nm1.5
terminal torque 1.1
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
10.5 3.2
8.6 6.8
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 150 A
per terminal
150-40
terminal to terminal
SOT-227B
(
minibloc
)
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DSEI2x101-12A 468002Tube 10DSEI2x101-12AStandard
2500
3000
ISOL
threshold voltage V1.01
mΩ
V
0 max
R
0 max
slope resistance * 4.9
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Fast
Diode
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130703aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEI2x101-12A
2
3
1
4
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20130703aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEI2x101-12A
200 600 10000 400 800
200
250
300
350
400
450
500
0.001 0.01 0.1 1 10
0.1
1
0 40 80 120 160
0.4
0.6
0.8
1.0
1.2
1.4
0 200 400 600 800 1000
10
30
50
0
20
40
60
0.0
0.5
1.0
1.5
200 600 10000400800
20
60
100
140
0
40
80
120
0001001
0
2
4
6
8
10
12
14
16
0.0 0.5 1.0 1.5 2.0
0
25
50
75
100
125
150
0.1
0.2
0.3
0.05
t[s]
I
F
[A]
-di
F
/dt [A/μs]
V
F
[V]
Q
r
[μC]
-di
F
/dt [A/μs]
I
RM
[A]
-di
F
/dt [A/μid-]s
F
/dt [A/μs]
V
FR
[V]
t
rr
[ns]
t
fr
[μs]
V
FR
T
VJ
[°C]
K
f
Z
thJC
[K/W]
I
RM
Q
rr
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. peak reverse current
I
rr
versus -di
F
/dt
Fig. 4 Dyn. parameters
Q
r
,I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal impedance junction to case
Constants for ZthJC calculation:
iR
thi ti
[K/W] [s]
1 0.0020 0.00002
2 0.0050 0.00081
3 0.0076 0.01
4 0.0240 0.94
5 0.0114 0.45
T
VJ
= 150°C
25°C
I
F
= 200 A
100 A
50 A
I
F
= 200 A
100 A
50 A
I
F
= 200 A
100 A
50 A
t
fr
T
VJ
= 100°C
V
R
= 600 V
T
VJ
= 100°C
V
R
= 600 V
T
VJ
=100°C
V
R
= 600 V
T
VJ
= 100°C
V
R
= 600 V
100°C
D=0.7
0.5
0.05
Single Pulse
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20130703aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved