DSEI2x101-12A FRED VRRM = 1200 V I FAV = 2x 91 A t rr = 40 ns Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x101-12A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips Low leakage current Short recovery time Improved thermal behaviour Low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate: Copper internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a DSEI2x101-12A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1200 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1200 V IR reverse current, drain current VF forward voltage drop min. typ. VR = 1200 V TVJ = 25C 3 mA VR = 960 V TVJ = 125C 15 mA I F = 100 A TVJ = 25C 1.87 V 2.13 V 1.61 V I F = 200 A TVJ = 150 C I F = 100 A I F = 200 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 50C rectangular 1.92 V T VJ = 150 C 91 A TVJ = 150 C 1.01 V d = 0.5 for power loss calculation only 6.1 m 0.5 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C 107 pF I RM max. reverse recovery current TVJ = 25 C 38 A t rr reverse recovery time IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved K/W 0.10 TC = 25C 250 900 W A I F = 100 A; VR = 600 V TVJ = 100C 52 A -di F /dt = 600 A/s TVJ = 25 C 150 ns TVJ = 100C 255 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a DSEI2x101-12A Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 150 Unit A -40 150 C -40 150 C Weight 30 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute 1.1 1.5 1.1 1.5 Nm Nm terminal to terminal 10.5 3.2 mm terminal to backside 8.6 6.8 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA Product Marking abcde Logo YYWW Z Part No. XXXXXX Assembly Code DateCode Assembly Line Ordering Standard Part Number DSEI2x101-12A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEI2x101-12A * on die level Delivery Mode Tube Code No. 468002 T VJ = 150 C Fast Diode V 0 max threshold voltage 1.01 V R 0 max slope resistance * 4.9 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a DSEI2x101-12A Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a DSEI2x101-12A Fast Diode 150 140 16 TVJ = 100C VR = 600 V 14 125 120 12 100 IF [A] IF = 200 A 100 A 50 A 10 75 TVJ = 150C 50 Qr 8 [C] 6 100C 0.5 1.0 [A] 60 40 1.5 0 0 100 2.0 1000 VF [V] Fig. 1 Forward current IF versus VF 1.4 0 trr 0.8 [ns] IRM 0.6 Qrr 600 800 Fig. 3 Typ. peak reverse current Irr versus -diF /dt 60 TVJ = 100C VR = 600 V 50 IF = 200 A 100 A 50 A 350 1.5 TVJ = 100C VR = 600 V 40 1.0 30 tfr VFR [s] [V] 300 20 250 10 200 0 0.5 VFR 0.4 0 40 80 120 160 0 TVJ [C] 200 400 600 800 1000 0 tfr 200 -diF /dt [A/s] 400 600 800 0.0 1000 -diF /dt [A/s] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dyn. parameters Qr, IRM versus TVJ 1000 Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 400 Kf 400 -diF /dt [A/s] 450 1.0 200 -diF /dt [A/s] 500 1.2 TVJ = 100C VR = 600 V 20 2 25C 0 0.0 IRM 80 4 25 IF = 200 A 100 A 50 A 100 1 D=0.7 ZthJC Constants for ZthJC calculation: 0.5 i 0.3 [K/W] 0.2 0.1 0.1 0.05 Single Pulse 0.05 0.001 0.01 0.1 1 10 1 2 3 4 5 Rthi ti [K/W] [s] 0.0020 0.0050 0.0076 0.0240 0.0114 0.00002 0.00081 0.01 0.94 0.45 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a