TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
1
DECEMBER 1971 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
●40 W at 25°C Case Temperature
●1 A Continuous Collector Current
●2 A Peak Collector Current
●20 mJ Reverse-Energy RatingB
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base. MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE 1: This value applies for tp ≤ 1 ms, duty cycle ≤ 2%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
RATINGSYMBOLVALUEUNIT
Collector-base voltage (IE = 0)
TIP47
TIP48
TIP49
TIP50
VCBO
350
400
450
500
V
Collector-emitter voltage (IB = 0)
TIP47
TIP48
TIP49
TIP50
VCEO
250
300
350
400
V
Emitter-base voltageVEBO5V
Continuous collector current IC1A
Peak collector current (see Note 1)ICM2A
Continuous base current IB0.6A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)Ptot40W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)Ptot2W
Unclamped inductive load energy (see Note 4)½LIC220mJ
Operating junction temperature rangeTj-65 to +150°C
Storage temperature rangeTstg-65 to +150°C
Lead temperature 3.2 mm from case for 10 secondsTL260°C