Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Schottky barrier Diode
RB551V-30
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
High frequency rectification
Features
1) Small mold type. (UMD2)
2) Low VF.
3) High reliability.
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
Io mA
IFSM A
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
VF1- - 0.36 V IF=100mA
VF2- - 0.47 V IF=500mA
IR- - 100 μAVR=20V
Parameter
Forward voltage
Reverse current
Storage temperature 40 to 125
Forward current surge peak (60Hz1cyc) 2
Junction temperature 125
Reverse voltage (DC) 20
Average rectified forward current 500
Parameter Limits
Reverse voltage (repetitive peak) 30
UMD2
2.1
0.8MIN
.
0.9MIN.
4.0±0.1 2.0±0.05 φ1.55±0.05
1.40±0.1 4.0±0.1 φ1.05
2.75
3.0.05 1.75±0.1
8.0±0.2
0.3±0.1
1.0±0.1
2.8±0.1
ROHM : UMD2
JEITA : SC-90/A
JEDEC : S0D-323
dot (year week factory)
0.3±0.05
0.7±0.2
    0.1
0.1±0.1
    0.05
1.7±0.1
2.5±0.2
1.25±0.1
1/3 2011.05 - Rev.C
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB551V-30
0
20
40
60
80
100
120
140
160
180
200
Ta=25
VR=20V
n=30pcs
AVE:42.7uA
1
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
1
10
100
1 10 100
8.3ms
Ifsm
1cyc
8.3ms
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
IR DISPERSIPN MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
0.1
1
10
100
1000
0 100 200 300 400 500 600
1
10
100
0102030
f=1MHz
400
410
420
430
440
450
AVE:420.4mV
Ta=25
IF=500mA
n=30pcs
40
50
60
70
80
AVE:59.5pF
Ta=25
f=1MHz
VR=0V
n=10pcs
0
5
10
15
20
AVE:8.60A
8.3ms
Ifsm 1cyc
1
10
100
0.1 1 10 100
t
Ifsm
0
0.1
0.2
0.3
0.4
0.5
0 0.2 0.4 0.6 0.8 1
0
0.1
0.2
0.3
0.4
0.5
0 5 10 15 20
0.1
1
10
100
1000
10000
100000
0 102030
Ta=125℃
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=-25
Ta=125
Ta=75
Ta=25
DC
D=1/2
Sin(θ180)
DC
D=1/2
Sin(θ180)
2/3 2011.05 - Rev.C
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB551V-30
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 25 50 75 100 125
AMBIENT TEMPERATURE:Ta()
Derating Curve(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc()
Derating Curve(Io-Tc)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 255075100125
DC
Sin(θ=180)
D=1/2
Sin(θ180)
DC
D=1/2
TTj=125
D=t/T
tVR
Io
VR=15V
0A
0V
TTj=125
D=t/T
tVR
Io
VR=15V
0A
0V
3/3 2011.05 - Rev.C
R1120A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Notice
ROHM Customer Support System
http://www.rohm.com/contact/
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
Notes