Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Schottky barrier Diode
RB551V-30
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
High frequency rectification
Features
1) Small mold type. (UMD2)
2) Low VF.
3) High reliability.
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
Io mA
IFSM A
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
VF1- - 0.36 V IF=100mA
VF2- - 0.47 V IF=500mA
IR- - 100 μAVR=20V
Parameter
Forward voltage
Reverse current
Storage temperature 40 to 125
Forward current surge peak (60Hz・1cyc) 2
Junction temperature 125
Reverse voltage (DC) 20
Average rectified forward current 500
Parameter Limits
Reverse voltage (repetitive peak) 30
UMD2
2.1
0.8MIN
0.9MIN.
4.0±0.1 2.0±0.05 φ1.55±0.05
1.40±0.1 4.0±0.1 φ1.05
2.75
3.5±0.05 1.75±0.1
8.0±0.2
0.3±0.1
1.0±0.1
2.8±0.1
ROHM : UMD2
JEITA : SC-90/A
JEDEC : S0D-323
dot (year week factory)
0.3±0.05
0.7±0.2
0.1
0.1±0.1
0.05
1.7±0.1
2.5±0.2
1.25±0.1
1/3 2011.05 - Rev.C