© Semiconductor Components Industries, LLC, 2014
November, 2014 Rev. 8
1Publication Order Number:
TIP110/D
TIP110, TIP111, TIP112
(NPN); TIP115, TIP116,
TIP117 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for generalpurpose amplifier and lowspeed switching
applications.
Features
High DC Current Gain
hFE = 2500 (Typ) @ IC
= 1.0 Adc
CollectorEmitter Sustaining Voltage @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) TIP110, TIP115
= 80 Vdc (Min) TIP111, TIP116
= 100 Vdc (Min) TIP112, TIP117
Low CollectorEmitter Saturation Voltage
VCE(sat) = 2.5 Vdc (Max) @ IC
= 2.0 Adc
Monolithic Construction with Builtin BaseEmitter Shunt Resistors
PbFree Packages are Available*
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
DARLINGTON
2 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
6080100 VOLTS, 50 WATTS
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4
TIP11x = Device Code
x = 0, 1, 2, 5, 6, or 7
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
TIP11xG
AYWW
See detailed ordering and shipping information on page 3 of
this data sheet.
ORDERING INFORMATION
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
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MAXIMUM RATINGS
Rating Symbol
TIP110,
TIP115
TIP111,
TIP116
TIP112,
TIP117 Unit
CollectorEmitter Voltage VCEO 60 80 100 Vdc
CollectorBase Voltage VCB 60 80 100 Vdc
EmitterBase Voltage VEB 5.0 Vdc
Collector Current Continuous
Peak
IC2.0
4.0
Adc
Base Current IB50 mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD50
0.4
W
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD2.0
0.016
W
W/°C
Unclamped Inductive Load Energy Figure 13 E 25 mJ
Operating and Storage Junction TJ, Tstg 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, JunctiontoCase RqJC 2.5 °C/W
Thermal Resistance, JunctiontoAmbient RqJA 62.5 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0) TIP110, TIP115
TIP111, TIP116
TIP112, TIP117
VCEO(sus)
60
80
100
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) TIP110, TIP115
(VCE = 40 Vdc, IB = 0) TIP111, TIP116
(VCE = 50 Vdc, IB = 0) TIP112 ,TIP117
ICEO
2.0
2.0
2.0
mAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) TIP110, TIP115
(VCB = 80 Vdc, IE = 0) TIP111, TIP116
(VCB = 100 Vdc, IE = 0) TIP112, TIP117
ICBO
1.0
1.0
1.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO 2.0 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 2.0 Adc, VCE = 4.0 Vdc)
hFE
1000
500
CollectorEmitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) VCE(sat) 2.5 Vdc
BaseEmitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc) VBE(on) 2.8 Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) hfe 25
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP115, TIP116, TIP117
TIP110, TIP111, TIP112
Cob
200
100
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
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Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
8.0 k 120
BASE
EMITTER
COLLECTOR
8.0 k 120
ORDERING INFORMATION
Device Package Shipping
TIP110 TO220 50 Units / Rail
TIP110G TO220
(PbFree)
50 Units / Rail
TIP111 TO220 50 Units / Rail
TIP111G TO220
(PbFree)
50 Units / Rail
TIP112 TO220 50 Units / Rail
TIP112G TO220
(PbFree)
50 Units / Rail
TIP115 TO220 50 Units / Rail
TIP115G TO220
(PbFree)
50 Units / Rail
TIP116 TO220 50 Units / Rail
TIP116G TO220
(PbFree)
50 Units / Rail
TIP117 TO220 50 Units / Rail
TIP117G TO220
(PbFree)
50 Units / Rail
00 20 40 60 80 100 120 160
Figure 2. Power Derating
T, TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
40
20
60
140
TC
0
2.0
1.0
3.0
TA
TA
TC
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
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Figure 3. Switching Times Test Circuit
4.0
0.04
Figure 4. Switching Times
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
2.0
1.0
0.8
0.2
0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
0.6
PNP
NPN
tf
tr
ts
td @ VBE(off) = 0
V2
approx
+8.0 V
V1
approx
-12 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
25 ms
0
RB
51 D1
+4.0 V
VCC
-30 V
RC
TUT
8.0 k 60
SCOPE
for td and tr, D1 is disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
VCC = 30 V
IC/IB = 250
0.4
IB1 = IB2
TJ = 25°C
Figure 5. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500
ZqJC(t) = r(t) RqJC
RqJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01 SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
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1.0
Figure 6. TIP115, 116, 117
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
4.0
2.0
1.0
0.1
10 60 80 100
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
IC, COLLECTOR CURRENT (AMPS)
TJ = 150°Cdc
1ms
40
TIP115
TIP116
TIP117
SECONDARY BREAKDOWN LIMITED
5ms
CURVES APPLY BELOW
RATED VCEO
1.0
Figure 7. TIP110, 111, 112
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
4.0
2.0
1.0
0.1 10 80 100
IC, COLLECTOR CURRENT (AMPS)
60
TIP110
TIP111
TIP112
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
TJ = 150°C
SECONDARY BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
dc
ACTIVEREGION SAFEOPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 6 and 7 is based on TJ(pk) = 150°C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150°C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
200
0.04
VR, REVERSE VOLTAGE (VOLTS)
10 0.4 0.6 1.0 2.0 404.00.06 0.1 0.2
C, CAPACITANCE (pF)
70
30
TC = 25°C
Cib
50
Cob
PNP
NPN
Figure 8. Capacitance
100
20
6.0 10 20
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
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VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
6.0 k
0.04
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
300 0.06 0.1 0.2 0.6 1.0 4.0
600
800
400
hFE, DC CURRENT GAIN
1.0 k
2.0 k
VCE = 3.0 V
0.4
NPN
TIP110, 111, 112
PNP
TIP115, 116, 117
Figure 10. Collector Saturation Region
3.4
0.1
IB, BASE CURRENT (mA)
0.6
0.2 1.0 2.0 20 100
1.8
IC =
0.5 A
TJ = 25°C
1.0 A
2.6
3.0
0.5 5.0
2.2
0.04
IC, COLLECTOR CURRENT (AMP)
0.06 0.1 0.2 0.6 1.0 2.0 4.0
1.8
1.4
1.0
0.6
0.2
TJ = 25°C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
Figure 11. “On” Voltages
VBE @ VCE = 3.0 V
4.0 k
3.0 k
TJ = 125°C
25°C
-55°C
50
IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
VCE = 3.0 V
TJ = 125°C
25°C
-55°C
1.4
2.0 A
IB, BASE CURRENT (mA)
TJ = 25°C
IC, COLLECTOR CURRENT (AMP)
V, VOLTAGE (VOLTS)
TJ = 25°C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
VBE @ VCE = 3.0 V
2.0
10
0.4
6.0 k
0.04
300 0.06 0.1 0.2 0.6 1.0 4.0
600
800
400
1.0 k
2.0 k
0.4
4.0 k
3.0 k
2.0
2.2
1.0
4.0 A
3.4
0.1
0.6
0.2 1.0 2.0 20 100
1.8
2.6
3.0
0.5 5.0 50
1.4
10
2.2
1.0
IC =
0.5 A 1.0 A 2.0 A 4.0 A
2.2
0.04 0.06 0.1 0.2 0.6 1.0 2.0 4.0
1.8
1.4
1.0
0.6
0.2 0.4
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
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Figure 12. Temperature Coefficients
NPN
TIP110, 111, 112
PNP
TIP115, 116, 117
Figure 13. Collector Cut-Off Region
IC, COLLECTOR CURRENT (AMP)
+0.8
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
0
-0.8
-1.6
-2.4
-3.2
-4.0
-4.8
*APPLIES FOR IC/IB hFE/3
*qVC for VCE(sat)
qVC for VBE
0.04 0.06 0.2 0.4 0.6 1.0 2.0 4.0
25°C to 150°C
-55°C to 25°C
0.1
25°C to 150°C
-55°C to 25°C
IC, COLLECTOR CURRENT (AMP)
+0.8
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
0
-0.8
-1.6
-2.4
-3.2
-4.0
-4.8
*APPLIES FOR IC/IB hFE/3
*qVC for VCE(sat)
qVC for VBE
0.04 0.06 0.2 0.4 0.6 1.0 2.0 4.0
25°C to 150°C
-55°C to 25°C
0.1
25°C to 150°C
-55°C to 25°C
105
-0.6
103
102
100
104
101
10-1
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
-0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
+1.4
, COLLECTOR CURRENT (A)μIC
105
-0.6
103
102
100
104
101
10-1
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
-0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
+1.4
, COLLECTOR CURRENT (A)μIC
Figure 14. Inductive Load Switching
Note A: Input pulse width is increased until ICM = 0.71 A,
NPN test shown; for PNP test
reverse all polarity and use MJE224 driver.
0.71 A
0 V
-5 V
tw 3.5 ms (SEE NOTE A)
INPUT
VOLTAGE
COLLECTOR
CURRENT
COLLECTOR
VOLTAGE
VCER
0 V
20 V
100 ms
VCE(sat)
INPUT MJE254
50 W
50 W
RBB1
2kW
RBB2
100 W
VBB2 = 0
TUT
VCE MONITOR
100 mH
VCC = 20 V
IC
MONITOR
RS =
0.1 W
TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS
+
-
VBB1 = 10 V +
-
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
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PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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Phone: 81358171050
TIP110/D
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