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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA — Small Signal Diode
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA Rev. 1. 1.0
November 2014
MMBD4148 / MMBD4148SE / MMBD4148CC /
MMBD4148CA
Small Signal Diode
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
MMBD4148 5H SOT-23 3L Tape and Reel
MMBD4148_D87Z 5H SOT-23 3L Tape and Reel
MMBD4148SE D4 SOT-23 3L Tape and Reel
MMBD4148CC D5 SOT-23 3L Tape and Reel
MMBD4148CA D6 SOT-23 3L Tape and Reel
Symbol Parameter Value Unit
VRRM Maximum Repetitive Reverse Voltage 100 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-Repetitive Peak Forward
Surge Current Pulse Width = 1.0 second 1.0 A
Pulse Width = 1.0 microsecond 2.0
TSTG Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature 150 °C
Connection Diagram
3
12
1
2
3
SOT-23
3
12
3
12
1
3
4148 4148SE
4148CA4148CC
2NC
MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA — Small Signal Diode
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA Rev. 1. 1.0 2
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
PDPower Dissipation 350 mW
RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W
Symbol Parameter Conditions Min. Max. Unit
VRBreakdown Voltage IR = 5.0 μA75
V
IR = 100 μA100
VFForward Voltage IF = 10 mA 1.0 V
IRReverse Leakage Current VR = 20 V 25 nA
VR = 20 V, TA = 150°C 50 μA
VR = 75 V 5.0 μA
CTTotal Capacitance VR = 0 V, f = 1.0 MHz 4.0 pF
trr Reverse Recovery Time IF = 10 mA, VR = 6.0 V,
IRR = 1.0 mA, RL = 100 Ω4.0 ns
MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA — Small Signal Diode
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA Rev. 1. 1.0 3
Typical Performance Characteristics
Figure 1. Reverse Voltage vs. Reverse Current
BV - 1.0 to 100 μAFigure 2. Reve rse Current vs. Reverse Voltage
IR - 10 to 100 V
Figure 3. Forward Voltage vs. Forward Current
VF - 1.0 to 100 μAFigure 4. Forward Voltage vs. Forward Current
VF - 0.1 to 10 mA
Figure 5. Forward Voltage vs. Forward Current
VF - 10 to 800 mA Figure 6. Total Capacitance vs. Reverse Voltage
110
120
130
140
150
1 2 3 5 10 20 30 50 100
Ta= 25 C
Reverse Voltage, V
R
[V]
Reverse Current, I
R
[ A]
°
μ
0
50
100
150
200
250
300
10 20 30 50 70 100
Ta= 25 C
Reverse Current, I
R
[nA]
Reverse Volta
g
e, V
[
V
]
°
R
250
300
350
400
450
1 2 3 5 10 20 30 50 100
Ta= 25 C
Forward Voltage, V
F
[mV]
Forward Current, I
F
[ A]
°
μ
450
500
550
600
650
700
0.1 0.2 0.3 0.5 1 2 3 5 10
Ta= 25 C
Forward Voltage, V
F
[mV]
Forward Current, I
F
[mA]
°
0.6
0.8
1.0
1.2
1.4
10 20 30 50 100 200 300 500
Ta= 25 C
Forward Voltage, V
F
[V]
Forward Current, I [mA]
°
F
0 2 4 6 8 10 12 14
1.0
1.1
1.2
1.3
Ta= 25 C
Total Capacitance [pF]
Reverse Voltage [V]
°
MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA — Small Signal Diode
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA Rev. 1. 1.0 4
Typical Performance Characteristics (Continued)
Figure 7. Reverse Reco very Time vs. Reverse Current
TRR - IR 10 mA to 60 mA Figure 8. Average Rectified Current (IF(AV))
vs. Ambient Temperature (TA)
Figure 9. Power Derating Curve
10 20 30 40 50 60
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Ta= 25 C
Reverse Recovery Time [nS]
Reverse Current [mA]
°
0 50 100 150
0
100
200
300
400
I
F(AV)
- AVERAGE RECTIFIED CURRENT - mA
Current [mA]
Ambient Temperature, T
A
[ C]
°
0 50 100 150 200
0
100
200
300
400
500
SOT-23 Pkg
Power Dissipation, P
D
[mW]
Average Temperature, I
O
[ C]
°
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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