Small Signal Transistor
RoHS Device
Page 1
REV:A
Features
-Power dissipation
O
PCM: 0.15W (@TA=25 C)
-Collector current
ICM: 0.1A
-Collector-base voltage
VCBO: BC846W=80V
BC847W=50V
BC848W=30V
-Operating and storage junction temperature
O
range: TJ, TSTG= -55 to +150 C
Mechanical data
-Case: SOT-323, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Approx. weight: 0.008 grams
Circuit diagram
BC846AW-G Thru. BC848CW-G (NPN)
O
Maximum Ratings (at Ta=25 C unless otherwise noted)
QW-BTR35
SMD Diodes Specialist
COMCHIP
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Storage Temperature Range
Units
Symbol
Parameter Value
3
1 2
VCBO
VCEO
VEBO
IC
PC
TSTG
80
50
30
65
45
30
6
5
150
-55 to +150
V
V
V
A
mW
OC
Dimensions in inches and (millimeter)
SOT-323
1 2
3
0.087 (2.20)
0.079 (2.00)
0.096 (2.45)
0.085 (2.15)
0.016 (0.40)
0.008 (0.20)
0.053(1.35)
0.045(1.15)
0.039 (1.00)
0.035 (0.90)
0.010 (0.26)
0.004 (0.10) max
0.006 (0.15)
0.003 (0.08)
0.055 (1.40)
0.047 (1.20)
0.018 (0.46)
Junction Temperature TJ150 OC
Collector Power Dissipation
BC846W-G
BC848W-G
BC847W-G
BC846W-G
BC848W-G
BC847W-G
0.1
Comchip Technology CO., LTD.
BC848W-G
BC846W-G / BC847W-G
-1.BASE
-2.EMITTER
-3.COLLECTOR
Electrical Characteristics
O
(BC846AW-G Thru. BC848CW-G, @TA= 25 C unless otherwise specified)
SMD Diodes Specialist
COMCHIP
Comchip Technology CO., LTD.
Page 2
REV:A
Small Signal Transistor
QW-BTR35
BC846W-G
Collector-Base Breakdown Voltage
BC848W-G
BC846W-G
Collector-Emitter Breakdown Voltage
BC848W-G
Emitter-Base Break Voltage BC846W-G, BC847W-G
BC848W-G
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Units
Symbol
Parameter MIN
VCBO
VCEO
VEBO
ICBO
VCE(sat)
Cob
80
50
30
65
45
30
6
5
15
4.5
V
V
V
nA
V
Test Conditions
IC =10μA , IE=0
IC =10mA , IB=0
IE =10μA , IC=0
VCB=30V
TYP MAX
BC846AW,847AW,848AW
DC Current Gain
hFE
VCE =5V , IC=10μA
BC846BW,847BW,848BW
BC847CW,848CW
90
150
270
BC846AW,847AW,848AW
BC846BW,847BW,848BW
BC847CW,848CW
VCE =5V , IC=2mA
110
200
420
220
450
800
IC =10mA , IB=0.5mA
IC =100mA , IB=0.5mA
0.25
0.60
Base-Emitter Saturation Voltage VBE(sat) V
IC =10mA , IB=0.5mA
IC =100mA , IB=5mA
0.7
0.9
Base-Emitter Voltage VBE(on) mV
VCE =5V , IC=2mA
VCE =5V , IC=10mA
580 660
700
770
Transition Frequency fTMHZ
100
VCE=5V , IC=10mA
f=100MHZ
Collector Output Capacitance VCB =10V , f=1MHZpF
BC847W-G
BC846W-G
Noise Figure
NF
VCE =5V , IC=0.2mA
BC846AW,847AW,848AW
BC846BW,847BW,848BW
BC847CW,848CW
10
4
dB
f =1KHZ , RS=2KΩ
BW=200Hz
Electrical Characteristic Curves (BC846AW-G Thru. BC848CW-G)
IC, Collector Current (mA)
2001010.2
Fig.1 Normalized DC Current Gain
0.2
1.0
2.0
hFE,Normalized DC Current Gan
0.1
Fig.2 Saturation and On voltage
0
V,Voltage (V )
0.2
0.4
0.6
1
1
IB, Base Current (mA)
0.01
Fig.3 Collector Saturation Region
0
VCE,(V
Collector-Emitter Voltage )
1.2
2
1 20
Fig.4 Base-Emitter Temperature Coefficient
O
θVB, Te mperature Coefficient ( mV / C)
2.4
0.8
SMD Diodes Specialist
COMCHIP
Comchip Technology CO., LTD.
Page 3
REV:A
10 100
0.1 10 100
2.8
0.1 1
1.6
0.8
10
Small Signal Transistor
QW-BTR35
100
O
TA=25 C
VCE=10V
IC, Collector Current (mAdc)
VCE(SAT)@IC/IB=10
VBE(ON)@VCE=10V
VBE(SAT)@IC/IB=10
0.4
0.8
1.6
IC=10mA
IC=20mA
IC=50mA
IC=100mA
200mA
IC, Collector Current (mA)
2.0
1.2
O
-55 to +125 C
VR, Reverse Voltage (V)
0.4
Fig.5 Capacitance
1
t
C,Capaciance (p F)
1 10 40
10
O
TA=25 C
Cib
Cob
O
TA=25 C
IC, Collector Current (mA)
0.5
Fig.6 Current Gain Bandwidth Product
20
fTCr
, urent-Gain-Bandwidth Product (MHZ)
1 10 50
400
100
O
TA=25 C
VCE=10V
IC=
QW-BTR35
SMD Diodes Specialist
COMCHIP
Comchip Technology CO., LTD.
Page 3
REV:A
Index hole
o
120
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End Start
d
E
F
B W
A
P
P0
P1
D1
D2
D
W1
T
C
Direction of Feed
Reel Taping Specification
B C dD D2D1
SOT-323
SYMBOL
A
(mm)
(inch) 2.142 ± 0.016
4.00 ± 0.10
1.55 + 0.10 54.40 ± 0.40 13.0 ± 0.20
4.00 ± 0.10 2.00 ± 0.10
178 ± 1.00
0.061 0.004+7.008 ± 0.039 0.512 ± 0.008
SYMBOL
(mm)
(inch) 0.158 ± 0.004 0.158 ± 0.004 0.079 ± 0.004
E F P P0P1W W1
1.75 ± 0.10
0.069 ± 0.004
3.50 ± 0.05
0.138± 0.002
SOT-323
2.25 ± 0.10
0.089 ± 0.004
2.55 ± 0.10
0.100 ± 0.004
1.19 ± 0.10
0.047 ± 0.004
9.50 ± 1.00
0.374 ± 0.039
8.00 0.30 /+–0.10
0.315 0.012 /+–0.004
Small Signal Transistor
QW-BTR35
SMD Diodes Specialist
COMCHIP
Comchip Technology CO., LTD.
Page 1
REV:A
Small Signal Schottky Diodes
Suggested PAD Layout
Standard Package
Case Type
Qty per Reel
(Pcs)
3000
SOT-323
Reel Size
(inch)
7
A
C
B
SIZE
(inch)
0.031
(mm)
0.80
1.30
1.94
0.051
0.076
SOT-323
2.74 0.108
A
B
C
D
D
Part Number
BC846AW-G
Marking Code
1A
Marking Code
BC847AW-G 1E
BC848AW-G 1J
XX
3
1 2
xx = Product type marking code
BC846BW-G 1B
BC847BW-G 1F
BC848BW-G 1K
BC847CW-G 1G
BC848CW-G 1L
