BSP50T/R - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1997 Apr 22 1999 Apr 23

DISCRETE SEMICONDUCTORS

BSP50; BSP51; BSP52

NPN Darlington transistors

handbook, halfpage

M3D087

1999 Apr 23 2

Philips Semiconductors Product speciﬁcation

NPN Darlington transistors BSP50; BSP51; BSP52

FEATURES

•High current (max. 1 A)

•Low voltage (max. 80 V)

•Integrated diode and resistor.

APPLICATIONS

•Industrial high gain amplification.

DESCRIPTION

NPN Darlington transistor in a SOT223 plastic package.

PNP complements: BSP60, BSP61 and BSP62.

PINNING

PIN DESCRIPTION

1 base

2,4 collector

3 emitter

Fig.1 Simplified outline (SOT223) and symbol.

123

MAM265

Top view

2, 4

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see

“Thermal considerations for the SOT223 in the General Part of associated

Handbook”

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BSP50 −60 V

BSP51 −80 V

BSP52 −90 V

VCES collector-emitter voltage VBE =0

BSP50 −45 V

BSP51 −60 V

BSP52 −80 V

VEBO emitter-base voltage open collector −5V

Ccollector current (DC) −1A

CM peak collector current −2A

Bbase current (DC) −100 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −1.25 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

1999 Apr 23 3

Philips Semiconductors Product speciﬁcation

NPN Darlington transistors BSP50; BSP51; BSP52

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see

“Thermal considerations for the SOT223 in the General Part of associated

Handbook

“.

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

Note

1. Pulse test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 96 K/W

Rth j-s thermal resistance from junction to solder point 17 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICES collector cut-off current

BSP50 VBE = 0; VCE =45V −−50 nA

BSP51 VBE = 0; VCE =60V −−50 nA

BSP52 VBE = 0; VCE =80V −−50 nA

IEBO emitter cut-off current IC= 0; VEB =4V −−50 nA

hFE DC current gain VCE = 10 V; note 1; see Fig.2

IC= 150 mA 1000 −−

= 500 mA 2000 −−

CEsat collector-emitter saturation

voltage IC= 500 mA; IB= 0.5 mA −−1.3 V

IC= 500 mA; IB= 0.5 mA;

Tj= 150 °C−−1.3 V

VBEsat base-emitter saturation

voltage IC= 500 mA; IB= 0.5 mA −−1.9 V

fTtransition frequency IC= 500 mA; VCE = 5 V; f = 100 MHz −200 −MHz

Switching times (between 10% and 90% levels); see Fig.3

ton turn-on time ICon = 500 mA; IBon = 0.5 mA;

IBoff =−0.5 mA −500 −ns

toff turn-off time −1300 −ns

1999 Apr 23 4

Philips Semiconductors Product speciﬁcation

NPN Darlington transistors BSP50; BSP51; BSP52

Fig.2 DC current gain; typical values.

handbook, full pagewidth

5000

1000

2000

3000

4000

MGD838

10−11IC (mA)

hFE

10 102103

VCE =10V.

Fig.3 Test circuit for switching times.

handbook, full pagewidth

DUT

MLB826

RB(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

VBB

VCC

Vi= 10 V; T = 200 µs; tp=6µs; tr=t

f≤3 ns.

R1 = 56 Ω; R2 = 10 kΩ; RB=10kΩ; RC=18Ω.

BB =−1.8 V; VCC = 10.7 V.

Oscilloscope: input impedance Zi=50Ω.

1999 Apr 23 5

Philips Semiconductors Product speciﬁcation

NPN Darlington transistors BSP50; BSP51; BSP52

PACKAGE OUTLINE

UNIT A1bpcDEe

pQywv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.10

0.01

1.8

1.5 0.80

0.60

3.1

2.9 0.32

0.22 6.7

6.3 3.7

3.3 2.3

4.6 7.3

6.7 1.1

0.7 0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 96-11-11

97-02-28

detail X

vMA

0 2 4 mm

scale

132

Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223

1999 Apr 23 6

Philips Semiconductors Product speciﬁcation

NPN Darlington transistors BSP50; BSP51; BSP52

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1999 Apr 23 7

Philips Semiconductors Product speciﬁcation

NPN Darlington transistors BSP50; BSP51; BSP52

NOTES

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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 23 Document order number: 9397 750 05809