© 2018 IXYS CORPORATION, All Rights Reserved DS100627A(5/18)
MMIX4B22N300
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 3000 V
VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 35 μA
Note 2, TJ = 125°C 1.5 mA
IGES VCE = 0V, VGE = ± 20V ±100 nA
VCE(sat) IC = 22A, VGE = 15V, Note 1 2.2 2.7 V
TJ = 125°C 2.7 V
VCES = 3000V
IC90 = 22A
VCE(sat) 

 2.7V
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
(Electrically Isolated Tab) E1C3
C2
E3E4
G2
E2C4
G4
C1
G1
G3
G = Gate E = Emitter
C = Collector
G1
G2
E1C3
C1
C2
G3
G4
E2C4
E3E4
Isolated Tab
G3
C1
E1C3
G1
E3E4
G4
E2C4
G2
C2
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V~ Electrical Isolation
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
Advantages
Low Gate Drive Requirement
High Power Density
Applications
Switch-Mode and Resonant-Mode
Power Supplies
Capacitor Discharge Circuits
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 3000 V
VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC = 25°C 38 A
IC90 TC = 90°C 22 A
ICM TC = 25°C, 1ms 165 A
SSOA VGE = 15V, TVJ = 125°C, RG = 15 ICM = 180 A
(RBSOA) Clamped Inductive Load VCES 1500 V
TSC VGE = 15V, TJ = 125°C,
(SCSOA) RG = 52, VCE = 1500V, Non-Repetitive 10 μs
PCTC = 25°C 150 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
FCMounting Force 50..200 / 11..45 N/lb
VISOL 50/60Hz, 1 minute 4000 V~
Weight 8 g
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
MMIX4B22N300
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfS IC = 22A, VCE = 10V, Note 1 13 22 S
Cies 2200 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 85 pF
Cres 30 pF
Qg(on) 110 nC
Qge IC = 22A, VGE = 15V, VCE = 1500V 13 nC
Qgc 45 nC
td(on) 46 ns
tr 360 ns
td(off) 205 ns
tf 1820 ns
td(on) 43 ns
tr 700 ns
td(off) 220 ns
tf 1650 ns
RthJC 0.83 °C/W
RthCS 0.05 °C/W
RthJA 30 °C/W
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times, TJ = 125°C
IC = 22A, VGE = 15V
VCE = 960V, RG = 15
Resistive Switching Times, TJ = 25°C
IC = 22A, VGE = 15V
VCE = 960V, RG = 15
Notes:
1. Pulse test, t 300s, duty cycle, d 2%.
2. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Additional provisions for lead-to-lead voltage isolation are required at VCE > 1200V.
Reverse Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max
VF IF = 22A, VGE = 0V, Note 1 2.7 V
trr 1.4 μs
IRM 30 A
QRM 21 μC
IF = 11A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
© 2018 IXYS CORPORATION, All Rights Reserved
MMIX4B22N300
Fig. 1. Output Characteristics @ T
J
= 25oC
0
4
8
12
16
20
24
28
32
36
40
44
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCE - Volts
IC - Amperes
V
GE
= 25V
15V
11V
5V
9V
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25oC
0
50
100
150
200
250
0 5 10 15 20 25 30
VCE - Volts
IC - Amperes
V
GE
= 25V
21V
19V
17V
7V
9V
15V
11V
13V
Fig. 3. Output Characteristics @ T
J
= 125oC
0
4
8
12
16
20
24
28
32
36
40
44
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE - Volts
IC - Amperes
V
GE
= 25V
19V
15V
13V
11V
5V
7V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
VCE(sat) - Normalized
V
GE
= 15V
I
C
= 44A
I
C
= 11A
I
C
= 22A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
1
2
3
4
5
6
6789101112131415
VGE - Volts
VCE - Volts
I
C
= 44A
T
J
= 25ºC
22A
11A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGE - Volts
IC - Amperes
T
J
=125
o
C
25
o
C
- 40
o
C
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
MMIX4B22N300
Fig. 7. Transconductance
0
4
8
12
16
20
24
28
32
0 10203040506070
IC - Amperes
g f s - Siemens
T
J
= - 40
o
C
25
o
C
125
o
C
Fig. 11. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
160
180
200
300 600 900 1200 1500 1800 2100 2400 2700 3000
VCE - Volts
IC - Amperes
T
J
= 125
o
C
R
G
= 15Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090100110
QG - NanoCoulombs
VGE - Volts
V
CE
= 1500V
I
C
= 22A
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
VCE - Volts
Capacitance - PicoFarad
f
= 1 MH
z
Cies
Coes
Cres
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
70
00.511.522.533.544.555.5
VF - Volts
IF - Amperes
V
GE
= 0V
T
J
J
= 25
o
C
125
o
C
V
GE
= 15V
Fig. 12. Maximum Transient Thermal Impedance
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - K / W
D = t
p
/ T
tp
T
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
© 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: MMIX4B22N300(5P) 03-10-14-A
MMIX4B22N300
Fig. 13. Forward-Bias Safe Operating Area @ T
C
= 25
o
C
0.01
0.1
1
10
100
1000
1 10 100 1,000 10,000
V
CE
- Volts
I
C
- Amperes
100μs
1ms
10ms
V
CE(sat)
Limi
t
DC
25μs
100ms
T
J
= 150oC
T
C
= 25oC
Single Pulse
Fig. 14. Forward-Bias Safe Operating Area @ T
C
= 75
o
C
0.01
0.1
1
10
100
1000
1 10 100 1,000 10,000
V
CE
- Volts
I
C
- Amperes
100μs
10ms
100ms
V
CE(sat)
Limi
t
T
J
= 150oC
T
C
= 75oC
Single Pulse
DC
25μs
1ms
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
MMIX4B22N300
Package Outline