Rev.7.6_00
BATTERY PROTECTION IC
FOR 1-CELL PACK S-8241 Series
Seiko Instruments Inc. 1
The S-8241 Series is a series of lithium ion/lithium polymer rechargeable battery
protection ICs incorporating high-accuracy voltage detection circuits and delay
circuits.
These ICs are suitable for protection of 1-cell lithium ion/lithium polymer battery
packs from overcharge, overdischarge and overcurrent.
Features
(1) Internal high-accuracy voltage detection circuit
• Overcharge detection voltage: 3.9 to 4.4 V (5 mV-step)
Accuracy of ±25 mV(+25 °C) and ± 30 mV(−5 to +55 °C)
• Overcharge release voltage: 3.8 to 4.4 V *1 Accuracy of ±50 mV
• Overdischarge detection voltage: 2.0 to 3.0 V (100 mV-step) Accuracy of ±80 mV
• Overdischarge release voltage: 2.0 to 3.4 V *2 Accuracy of ±100 mV
• Overcurrent 1 detection voltage: 0.05 to 0.3 V (5 mV-step) Accuracy of ±20 mV
• Overcurrent 2 detection voltage: 0.5 V (fixed) Accuracy of ±100 mV
(2) A high voltage withstand device is used for charger connection pins
(VM and CO pins: Absolute maximum rating = 26 V)
(3) Delay times (overcharge: tCU; overdischarge: tDL; overcurrent 1: tlOV1; overcurrent 2: tlOV2) are generated
by an internal circuit. (External capacitors are unnecessary.) Accuracy of ±30%
(4) Internal three-step overcurrent detection circuit (overcurrent 1, overcurrent 2, and load short-circuiting)
(5) Either the 0 V battery charging function or 0 V battery charge inhibiting function can be selected.
(6) Products with and without a power-down function can be selected.
(7) Charger detection function and abnormal charge current detection function
• The overdischarge hysterisis is released by detecting a negative VM pin voltage (typ. −1.3 V) (Charger detection
function).
• If the output voltage at DO pin is high and the VM pin voltage becomes equal to or lower than the charger detection
voltage (typ. −1.3 V), the output voltage at CO pin goes low (Abnormal charge current detection function).
(8) Low current consumption
• Operation: 3.0 μA typ. 5.0 μA max.
• Power-down mode: 0.1 μA max.
(9) Wide operating temperature range: −40 to +85 °C
(10) Small package SOT-23-5, SNT-6A
(11) Lead-free products
*1. Overcharge release voltage = Overcharge detection voltage - Overcharge hysteresis
The overcharge hysteresis can be selected in the range 0.0, or 0.1 to 0.4 V in 50 mV steps. (However, selection
“Overcharge release voltage<3.8 V” is enabled.)
*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis
The overdischarge hysteresis can be selected in the range 0.0 to 0.7 V in 100 mV steps. (However, selection
“Overdischarge release voltage>3.4 V” is enabled.)
Applications
• Lithium-ion rechargeable battery packs
• Lithium- polymer rechargeable battery packs
Packages
Drawing code
Package name Package Tape Reel Land
SOT-23-5 MP005-A MP005-A MP005-A ⎯
SNT-6A PG006-A PG006-A PG006-A PG006-A
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series Rev.7.6_00
Seiko Instruments Inc.
2
Block Diagram
+
−
−
+
VM
VSS
VDD
CO
DO
Overcharge
detection
comparator
Overcurrent 1
detection comparator
−
+
−
+
Overdischarge
detection
comparator
Overcurrent 2
detection comparator
Delay circuit
R
VMD
R
VMS
Counter circuit
Clock generation circuit
The overdischarge
hysterisis is released when
a charger is detected.
R
COL
Load
short-circuiting
detection circuit
Level conversion circuit
0V battery charging circuit
0V battery charge
inhibition circuit
Charger
detection circuit
Remark The diodes in the IC are parasitic diodes.
Figure 1
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.6_00 S-8241 Series
Seiko Instruments Inc. 3
Product Name Structure
1. Product Name
IC direction in tape s pecifications*1
T2 : SOT-23-5
TF : SNT-6A
Product code*2
P ackage code
MC : SOT-23-5
PG : SNT-6A
Serial c ode
Sequentially set from BA to ZZ
S-8241A xx xx - xxx xx G
*1. Refer to the taping specifications.
*2. Refer to the “2. Product Name List”.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series Rev.7.6_00
Seiko Instruments Inc.
4
2. Product Name List
(1) SOT-23-5 Table 1 (1/2)
Product Name / Item
Over-
charge
detection
voltage
V
CU
Over-
charge
release
voltage
V
CL
Over-
discharge
detection
voltage
V
DL
Over-
discharge
release
voltage
V
DU
Over-
current 1
detection
voltage
V
IOV1
0 V battery
charging
function
Delay
time
combi-
nation
*1
Power down
function
S-8241ABAMC-GBAT2G 4.275 V 4.075 V 2.30 V 2.90 V 0.100 V Unavailable (1) Yes
S-8241ABBMC-GBBT2G 4.280 V 3.980 V 2.30 V 2.40 V 0.125 V Available (2) Yes
S-8241ABCMC-GBCT2G 4.350 V 4.100 V 2.30 V 2.80 V 0.075 V Unavailable (1) Yes
S-8241ABDMC-GBDT2G 4.275 V 4.175 V 2.30 V 2.40 V 0.100 V Available (1) Yes
S-8241ABEMC-GBET2G 4.295 V 4.095 V 2.30 V 3.00 V 0.200 V Unavailable (1) Yes
S-8241ABFMC-GBFT2G 4.325 V 4.075 V 2.50 V 2.90 V 0.100 V Unavailable (1) Yes
S-8241ABGMC-GBGT2G 4.200 V 4.100 V 2.30 V 3.00 V 0.100 V Unavailable (1) Yes
S-8241ABHMC-GBHT2G 4.325 V 4.125 V 2.30 V 2.30 V 0.100 V Available (1) Yes
S-8241ABIMC-GBIT2G 4.280 V 4.080 V 2.30 V 2.30 V 0.160 V Unavailable (1) Yes
S-8241ABKMC-GBKT2G 4.325 V 4.075 V 2.50 V 2.90 V 0.150 V Unavailable (1) Yes
S-8241ABLMC-GBLT2G 4.320 V 4.070 V 2.50 V 2.90 V 0.100 V Unavailable (1) Yes
S-8241ABOMC-GBOT2G 4.350 V 4.150 V 2.30 V 3.00 V 0.150 V Available (2) Yes
S-8241ABPMC-GBPT2G 4.350 V 4.150 V 2.30 V 3.00 V 0.200 V Available (2) Yes
S-8241ABQMC-GBQT2G 4.280 V 4.080 V 2.30 V 2.30 V 0.130 V Unavailable (1) Yes
S-8241ABRMC-GBRT2G 4.325 V 4.075 V 2.50 V 2.90 V 0.100 V Unavailable (4) Yes
S-8241ABTMC-GBTT2G 4.300 V 4.100 V 2.30 V 2.30 V 0.100 V Available (1) Yes
S-8241ABUMC-GBUT2G 4.200 V 4.100 V 2.30 V 2.30 V 0.150 V Unavailable (1) Yes
S-8241ABVMC-GBVT2G 4.295 V 4.095 V 2.30 V 2.30 V 0.130 V Available (1) Yes
S-8241ABWMC-GBWT2G 4.280 V 4.080 V 2.30 V 2.30 V 0.130 V Unavailable (3) Yes
S-8241ABXMC-GBXT2G 4.350 V 4.000 V 2.60 V 3.30 V 0.200 V Unavailable (1) Yes
S-8241ABYMC-GBYT2G 4.220 V 4.220 V 2.30 V 2.30 V 0.200 V Available (3) Yes
S-8241ACAMC-GCAT2G 4.280 V 4.080 V 2.30 V 2.30 V 0.200 V Available (1) Yes
S-8241ACBMC-GCBT2G 4.300 V 4.100 V 2.30 V 2.30 V 0.150 V Available (1) Yes
S-8241ACDMC-GCDT2G 4.275 V 4.075 V 2.30 V 2.30 V 0.100 V Unavailable (4) Yes
S-8241ACEMC-GCET2G 4.295 V 4.095 V 2.30 V 2.30 V 0.080 V Available (1) Yes
S-8241ACFMC-GCFT2G 4.295 V 4.095 V 2.30 V 2.30 V 0.090 V Available (1) Yes
S-8241ACGMC-GCGT2G 4.295 V 4.095 V 2.30 V 2.30 V 0.060 V Available (1) Yes
S-8241ACHMC-GCHT2G 4.280 V 4.080 V 2.60 V 2.60 V 0.200 V Available (1) Yes
S-8241ACIMC-GCIT2G 4.350 V 4.150 V 2.05 V 2.75 V 0.200 V Available (2) Yes
S-8241ACKMC-GCKT2G 4.350 V 4.150 V 2.00 V 2.00 V 0.200 V Available (2) Yes
S-8241ACLMC-GCLT2G 4.200 V 4.200 V 2.50 V 3.00 V 0.100 V Available (1) Yes
S-8241ACNMC-GCNT2G 4.350 V 4.150 V 2.10 V 2.20 V 0.200 V Available (2) Yes
S-8241ACOMC-GCOT2G 4.100 V 3.850 V 2.50 V 2.90 V 0.150 V Unavailable (1) No
S-8241ACPMC-GCPT2G 4.325 V 4.075 V 2.50 V 2.90 V 0.150 V Unavailable (1) No
S-8241ACQMC-GCQT2G 4.275 V 4.175 V 2.30 V 2.40 V 0.100 V Available (1) No
S-8241ACRMC-GCRT2G 4.350 V 4.150 V 2.30 V 3.00 V 0.100 V Available (1) No
S-8241ACSMC-GCST2G 4.180 V 3.930 V 2.50 V 2.90 V 0.150 V Unavailable (1) No
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.6_00 S-8241 Series
Seiko Instruments Inc. 5
Table 1 (2/2)
Product Name / Item
Over-
charge
detection
voltage
V
CU
Over-
charge
release
voltage
V
CL
Over-
discharge
detection
voltage
V
DL
Over-
discharge
release
voltage
V
DU
Over-
current 1
detection
voltage
V
IOV1
0 V battery
charging
function
Delay
time
combi-
nation
*1
Power down
function
S-8241ACTMC-GCTT2G 4.100 V 4.000 V 2.50 V 2.90 V 0.150 V Unavailable (1) No
S-8241ACUMC-GCUT2G 4.180 V 4.080 V 2.50 V 2.90 V 0.150 V Unavailable (1) No
S-8241ACXMC-GCXT2G 4.275 V 4.075 V 2.50 V 2.90 V 0.150 V Unavailable (1) No
S-8241ACYMC-GCYT2G 4.275 V 4.075 V 2.60 V 2.90 V 0.100 V Unavailable (1) No
S-8241ADAMC-GDAT2G 4.350 V 4.150 V 2.30 V 3.00 V 0.100 V Available (1) Yes
S-8241ADDMC-GDDT2G 4.185 V 4.085 V 2.80 V 2.90 V 0.150 V Unavailable (1) Yes
S-8241ADEMC-GDET2G 4.350 V 4.150 V 2.10 V 2.20 V 0.150 V Available (2) Yes
S-8241ADFMC-GDFT2G 4.350 V 4.150 V 2.10 V 2.10 V 0.150 V Unavailable (5) Yes
S-8241ADGMC-GDGT2G 4.275 V 4.075 V 2.10 V 2.10 V 0.150 V Unavailable (5) Yes
S-8241ADLMC-GDLT2G 4.220 V 4.070 V 2.70 V 3.00 V 0.300 V Available (1) Yes
S-8241ADMMC-GDMT2G 4.230 V 4.080 V 2.70 V 3.00 V 0.300 V Available (1) Yes
S-8241ADNMC-GDNT2G 4.250 V 4.100 V 2.70 V 3.00 V 0.300 V Available (1) Yes
S-8241ADOMC-GDOT2G 4.275 V 4.175 V 2.30 V 2.40 V 0.100 V Unavailable (1) No
S-8241ADQMC-GDQT2G 4.250 V 4.100 V 2.00 V 2.70 V 0.150 V Available (1) Yes
S-8241ADTMC-GDTT2G 4.180 V 4.180 V 2.50 V 3.00 V 0.100 V Available (1) Yes
S-8241ADVMC-GDVT2G 3.900 V 3.900 V 2.00 V 2.30 V 0.150 V Available (1) Yes
*1. Refer to the Table 3 about the details of the delay time combinations (1) to (5).
Remark Please contact our sales office for the products with detection voltage value other than those specified above.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series Rev.7.6_00
Seiko Instruments Inc.
6
(2) SNT-6A Table 2
Product Name / Item
Over-
charge
detection
voltage
V
CU
Over-
charge
release
voltage
V
CL
Over-
discharge
detection
voltage
V
DL
Over-
discharge
release
voltage
V
DU
Over-
current 1
detection
voltage
V
IOV1
0 V battery
charging
function
Delay
time
combi-
nation
*1
Power down
function
S-8241ABDPG-KBDTFG 4.275 V 4.175 V 2.30 V 2.40 V 0.100 V Available (1) Yes
S-8241ABSPG-KBSTFG 4.350 V 4.150 V 2.35 V 2.65 V 0.200 V Available (2) Yes
S-8241ABZPG-KBZTFG 4.275 V 4.075 V 2.30 V 2.40 V 0.140 V Available (1) Yes
S-8241ACZPG-KCZTFG 4.350 V 4.150 V 2.70 V 2.70 V 0.200 V Unavailable (2) Yes
S-8241ADFPG-KDFTFG 4.350 V 4.150 V 2.10 V 2.10 V 0.150 V Unavailable (5) Yes
S-8241ADHPG-KDHTFG 4.250 V 4.050 V 2.40 V 2.90 V 0.100 V Available (1) No
*1. Refer to the Table 3 about the details of the delay time combinations (1) to (5).
Remark Please contact our sales office for the products with detection voltage value other than those specified above.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.6_00 S-8241 Series
Seiko Instruments Inc. 7
Table 3
Delay time
combination Overcharge detection
delay time
tCU
Overdischarge detection
delay time
tDL
Overcurrent 1 detection
delay time
tlOV1
(1) 1.0 s 125 ms 8 ms
(2) 0.125 s 31 ms 16 ms
(3) 0.25 s 125 ms 8 ms
(4) 2.0 s 125 ms 8 ms
(5) 0.25 s 31 ms 16 ms
Remark The delay times can be changed within the range listed Table 4. For details, please contact our sales office.
Table 4
Delay time Symbol Selection range Remarks
Overcharge detection delay time tCU 0.25 s 0.5 s 1.0 s 2.0 s Select a value from the left.
Overdischarge detection delay time tDL 31 ms 62.5 ms 125 ms
⎯
Select a value from the left.
Overcurrent 1 detection delay time tlOV1 4 ms 8 ms 16 ms
⎯
Select a value from the left.
Remark The value surrounded by bold lines is the delay time of the standard products.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series Rev.7.6_00
Seiko Instruments Inc.
8
Pin Configurations
Table 5
Pin No. Symbol Description
1 VM
Voltage detection pin between VM and VSS
(Overcurrent detection pin)
2 VDD
Positive power input pin
3 VSS
Negative power input pin
4 DO
FET gate connection pin for discharge control
(CMOS output)
5 CO
FET gate connection pin for charge control
(CMOS output)
5 4
1 3 2
SOT-23-5
Top view
Figure 2
Table 6
Pin No. Symbol Description
1 NC*1 No connection
2 CO
FET gate connection pin for charge control
(CMOS output)
3 DO
FET gate connection pin for discharge control
(CMOS output)
SNT-6A
Top view
1
2
3 4
6
5
4 VSS Negative power input pin
Figure 3 5 VDD Positive power input pin
6 VM
Voltage detection pin between VM and VSS
(Overcurrent detection pin)
*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.6_00 S-8241 Series
Seiko Instruments Inc. 9
Absolute Maximum Ratings Table 7 (Ta = 25 °C unless otherwise specified)
Item Symbol Applicable pin Rating Unit
Input voltage between VDD and VSS V DS VDD VSS −0.3 to VSS +12 V
VM input pin voltage VVM VM VDD −26 to VDD +0.3 V
CO output pin voltage VCO CO VVM −0.3 to VDD +0.3 V
DO output pin voltage VDO DO VSS −0.3 to VDD +0.3 V
250 (When not mounted on board) mW
SOT-23-5 600*1 mW
Power dissipation SNT-6A PD
⎯
400*1 mW
Operation ambient temperature Topr
⎯
−40 to +85 °C
Storage temperature Tstg
⎯
−40 to +125 °C
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Board name: JEDEC STANDARD51-7
Caution The absolute maximum ratings are rated values exceeding w h ich the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
050 100 150
700
400
0
Power Diss
p
ati on
(
PD
)
[
mW
]
Ambient Tem
p
erature
(
Ta
)
[
°C
]
200
600
500
300
100
SNT-6A
SOT-23-5
Figure 4 Pow er Dissipation of Package (When Mounted on Board)
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series Rev.7.6_00
Seiko Instruments Inc.
10
Electrical Characteristics
1. Other than detection delay time (25 °C) Table 8
(Ta = 25
°
C unless otherwise specified)
Item
Symbol
Condition
Min. Typ. Max. Unit
Test
Condition Test
Circuit
DETECTION VOLTAGE
⎯
V
CU
-0.025 V
CU
V
CU
+0.025
Overcharge detection voltage
V
CU
= 3.9 to 4.4 V, 5 mV Step
V
CU
Ta = -5 to +55
°
C
*1
V
CU
-0.030 V
CU
V
CU
+0.030
V 1 1
When V
CL
≠
V
CU
V
CL
-0.050 V
CL
V
CL
+0.050
Overcharge release voltage
V
CU
−
V
CL
= 0 to 0.4 V, 50 mV Step
V
CL
When V
CL
= V
CU
V
CL
-0.025 V
CL
V
CL
+0.025
V 1 1
Overdischarge detection voltage
V
DL
= 2.0 to 3.0 V, 100 mV Step
V
DL
⎯
V
DL
-0.080 V
DL
V
DL
+0.080
V 1 1
When V
DU
≠
V
DL
V
DU
-0.100 V
DU
V
DU
+0.100
Overdischarge release voltage
V
DU
−
V
DL
= 0 to 0.7 V, 100 m V Step
V
DU
When V
DU
= V
DL
V
DU
-0.080 V
DU
V
DU
+0.080
V 1 1
Overcurrent 1 detection voltage
V
IOV1
= 0.05 to 0.3V, 5 mV Step
V
IOV1
⎯
V
IOV1
-0.020 V
IOV1
V
IOV1
+0.020
V 2 1
Overcurrent 2 detection voltage
V
IOV2
⎯
0.4 0.5 0.6
V 2 1
Load short-circuiting detection
voltage
V
SHORT
VM voltage based on V
DD
-1.7 -1.3 -0.9
V 2 1
Charger detection voltage
V
CHA
⎯
-2.0 -1.3 -0.6
V 3 1
Overcharge detection voltage
temperature factor
*1
T
COE1
Ta = -5 to +55
°
C
-0.5 0 0.5
mV/
°
C
⎯
⎯
Overcurrent 1 detection voltage
temperature factor
*1
T
COE2
Ta = -5 to +55
°
C
-0.1 0 0.1
mV/
°
C
⎯
⎯
INPUT VOLTAGE, OPERATING VOLTAGE
Input voltage between VDD and
VSS
V
DS1
absolute maximum rating
-0.3
⎯
12
V
⎯
⎯
Input voltage between VDD and
VM
V
DS2
absolute maximum rating
-0.3
⎯
26
V
⎯
⎯
Operating voltage between VDD
and VSS
V
DSOP1
Internal circuit operating voltage
1.5
⎯
8
V
⎯
⎯
Operating voltage between VDD
and VM
V
DSOP2
Internal circuit operating voltage
1.5
⎯
24
V
⎯
⎯
CURRENT CONSUMPTION
Power-down function available
Current consumption during
normal operation
I
OPE
V
DD
= 3.5 V, V
VM
= 0 V
1.0 3.0 5.0
μ
A 4 1
Current consumption at power
down
I
PDN
V
DD
= V
VM
= 1.5 V
⎯
⎯
0.1
μ
A 4 1
CURRENT CONSUMPTION
Power-down function unavailable
Current consumption during
normal operation
I
OPE
V
DD
= 3.5 V, V
VM
= 0 V
1.0 3.0 5.0
μ
A 4 1
Overdischarge current
consumption
I
OPED
V
DD
= V
VM
= 1.5 V
1.0 2.0 3.5
μ
A 4 1
OUTPUT RESISTANCE
CO pin H resistance
R
COH
V
CO
= 3.0 V, V
DD
= 3.5 V, V
VM
= 0 V 0.1 2 10
k
Ω
6 1
CO pin L resistance
R
COL
V
CO
= 0.5 V, V
DD
= 4.5 V, V
VM
= 0 V 150 600 2400
k
Ω
6 1
DO pin H resistance
R
DOH
V
DO
= 3.0 V, V
DD
= 3.5 V, V
VM
= 0 V 0.1 1.3 6.0
k
Ω
7 1
DO pin L resistance
R
DOL
V
DO
= 0.5 V, V
DD
= V
VM
= 1.8 V 0.1 0.5 2.0
k
Ω
7 1
VM INTERNAL RESISTANCE
Internal resistance between VM
and VDD
R
VMD
V
DD
= 1.8 V, V
VM
= 0 V 100 300 900 k
Ω
5 1
Internal resistance between VM
and VSS
R
VMS
V
DD
= V
VM
= 3.5 V 50 100 150 k
Ω
5 1
0 V BATTERY CHARGING FUNCTION
The 0 V battery function is either "0 V battery charging function" or "0 V battery charge inhibiting function"
depending upon the product type.
0 V battery charge starting char ger
voltage
V
0CHA
0 V battery charging Available 0.0 0.8 1.5 V 10 1
0 V battery charge inhibiting
battery voltage V
0INH
0 V battery charging Unavailable 0.6 0.9 1.2 V 11 1
*1.
Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in
production.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.6_00 S-8241 Series
Seiko Instruments Inc. 11
2. Other than detection delay time (-40 to +85 °C*1)
Table 9
(Ta = -40 to +85
°
C
*1
unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition Test
Circuit
DETECTION VOLTAGE
Overcharge detection voltage
V
CU
= 3.9 to 4.4 V, 5 mV Step
V
CU
⎯
V
CU
-0.055 V
CU
V
CU
+0.040
V 1 1
When V
CL
≠
V
CU
V
CL
-0.095 V
CL
V
CL
+0.060
Overcharge release voltage
V
CU
−
V
CL
= 0 to 0.4 V, 50 mV Step
V
CL
When V
CL
= V
CU
V
CL
-0.055 V
CL
V
CL
+0.040
V 1 1
Overdischarge detection voltage
V
DL
= 2.0 to 3.0 V, 100 mV Step
V
DL
⎯
V
DL
-0.120 V
DL
V
DL
+0.120
V 1 1
When V
DU
≠
V
DL
V
DU
-0.140 V
DU
V
DU
+0.140
Overdischarge release voltage
V
DU
−
V
DL
= 0 to 0.7 V, 100 m V Step
V
DU
When V
DU
= V
DL
V
DU
-0.120 V
DU
V
DU
+0.120
V 1 1
Overcurrent 1 detection voltage
V
IOV1
= 0.05 to 0.3V, 5 mV Step
V
IOV1
⎯
V
IOV1
-0.026 V
IOV1
V
IOV1
+0.026
V 2 1
Overcurrent 2 detection voltage
V
IOV2
⎯
0.37 0.5 0.63
V 2 1
Load short-circuiting detection
voltage
V
SHORT
VM voltage based on V
DD
-1.9 -1.3 -0.7
V 2 1
Charger detection voltage
V
CHA
⎯
-2.2 -1.3 -0.4
V 3 1
Overcharge detection voltage
temperature factor
*1
T
COE1
Ta = -40 to +85
°
C
-0.7 0 0.7
mV/
°
C
⎯
⎯
Overcurrent 1 detection voltage
temperature factor
*1
T
COE2
Ta = -40 to +85
°
C
-0.2 0 0.2
mV/
°
C
⎯
⎯
INPUT VOLTAGE, OPERATING VOLTAGE
Input voltage between VDD and
VSS
V
DS1
absolute maximum rating
-0.3
⎯
12
V
⎯
⎯
Input voltage between VDD and
VM
V
DS2
absolute maximum rating
-0.3
⎯
26
V
⎯
⎯
Operating voltage between VDD
and VSS
V
DSOP1
Internal circuit operating voltage
1.5
⎯
8
V
⎯
⎯
Operating voltage between VDD
and VM
V
DSOP2
Internal circuit operating voltage
1.5
⎯
24
V
⎯
⎯
CURRENT CONSUMPTION
Power-down function available
Current consumption during
normal operation
I
OPE
V
DD
= 3.5 V, V
VM
= 0 V
0.7 3.0 6.0
μ
A 4 1
Current consumption at power
down
I
PDN
V
DD
= V
VM
= 1.5 V
⎯
⎯
0.1
μ
A 4 1
CURRENT CONSUMPTION
Power-down function unavailable
Current consumption during
normal operation
I
OPE
V
DD
= 3.5 V, V
VM
= 0 V
0.7 3.0 6.0
μ
A 4 1
Overdischarge current
consumption
I
OPED
V
DD
= V
VM
= 1.5 V
0.6 2.0 4.5
μ
A 4 1
OUTPUT RESISTANCE
CO pin H resistance
R
COH
V
CO
= 3.0 V, V
DD
= 3.5 V, V
VM
= 0 V 0.07 2 13
k
Ω
6 1
CO pin L resistance
R
COL
V
CO
= 0.5 V, V
DD
= 4.5 V, V
VM
= 0 V 100 600 3500
k
Ω
6 1
DO pin H resistance
R
DOH
V
DO
= 3.0 V, V
DD
= 3.5 V, V
VM
= 0 V 0.07 1.3 7.3
k
Ω
7 1
DO pin L resistance
R
DOL
V
DO
= 0.5 V, V
DD
= V
VM
= 1.8 V 0.07 0.5 2.5
k
Ω
7 1
VM INTERNAL RESISTANCE
Internal resistance between VM
and VDD
R
VMD
V
DD
= 1.8 V, V
VM
= 0 V
78 300 1310
k
Ω
5 1
Internal resistance between VM
and VSS
R
VMS
V
DD
= V
VM
= 3.5 V
39 100 220
k
Ω
5 1
0 V BATTERY CHARGING FUNCTION
The 0 V battery function is either "0 V battery charging function" or "0 V battery charge inhibiting function"
depending upon the product type.
0 V battery charge starting char ger
voltage
V
0CHA
0 V battery charging Available
0.0 0.8 1.7
V 10 1
0 V battery charge inhibiting
battery voltage V
0INH
0 V battery charging Unavailable
0.4 0.9 1.4
V 11 1
*1.
Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in
production.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series Rev.7.6_00
Seiko Instruments Inc.
12
3 Detection delay time
(1) S-8241ABA, S-8241ABC, S-8241ABD, S-8241ABE, S-8241ABF, S-8241ABG, S-8241ABH,
S-8241ABI, S-8241ABK, S-8241ABL, S-8241ABQ, S-8241ABT , S-8241ABU, S-8241ABV,
S-8241ABX, S-8241ABZ, S-8241ACA, S-8241ACB, S-8241ACE, S-8241ACF, S-8241ACG,
S-8241ACH, S-8241ACL, S-8241ACO, S-8241ACP, S-8241ACQ, S-8241ACR, S-8241ACS,
S-8241ACT, S-8241ACU, S-8241ACX, S-8241ACY, S-8241ADA, S-8241ADD, S-8241ADH,
S-8241ADL, S-8241ADM, S-8241ADN, S-8241ADO, S-8241ADQ, S-8241ADT, S-8241ADV
Table 10
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition Test
Circuit
DELAY TIME (Ta = 25 °C)
Overcharge detection delay time t
CU
⎯
0.7 1.0 1.3 s 8 1
Overdischarge detection delay time t
DL
⎯
87.5 125 162.5 ms 8 1
Overcurrent 1 detection delay time t
lOV1
⎯
5.6 8 10.4 ms 9 1
Overcurrent 2 detection delay time t
lOV2
⎯
1.4 2 2.6 ms 9 1
Load short-circuiting detection delay time t
SHORT
⎯
⎯
10 50
μ
s 9 1
DELAY TIME (Ta =
−
40 to
+
85 °C)
*1
Overcharge detection delay time t
CU
⎯
0.55 1.0 1.7 s 8 1
Overdischarge detection delay time t
DL
⎯
69 125 212 ms 8 1
Overcurrent 1 detection delay time t
IOV1
⎯
4.4 8 14 ms 9 1
Overcurrent 2 detection delay time t
IOV2
⎯
1.1 2 3.4 ms 9 1
Load short-circuiting detection delay time t
SHORT
⎯
⎯
10 73
μ
s 9 1
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by
design, not tested in production.
(2) S-8241ABB, S-8241ABO, S-8241ABP, S-8241ABS, S-8241ACI, S-8241ACK, S-8241ACN,
S-8241ACZ, S-8241ADE
Table 11
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition Test
Circuit
DELAY TIME (Ta = 25 °C)
Overcharge detection delay time t
CU
⎯
87.5 125 162.5 ms 8 1
Overdischarge detection delay time t
DL
⎯
21 31 41 ms 8 1
Overcurrent 1 detection delay time t
lOV1
⎯
11 16 21 ms 9 1
Overcurrent 2 detection delay time t
lOV2
⎯
1.4 2 2.6 ms 9 1
Load short-circuiting detection delay time t
SHORT
⎯
⎯
10 50
μ
s 9 1
DELAY TIME (Ta =
−
40 to
+
85 °C)
*1
Overcharge detection delay time t
CU
⎯
69 125 212 ms 8 1
Overdischarge detection delay time t
DL
⎯
17 31 53 ms 8 1
Overcurrent 1 detection delay time t
IOV1
⎯
9 16 27 ms 9 1
Overcurrent 2 detection delay time t
IOV2
⎯
1.1 2 3.4 ms 9 1
Load short-circuiting detection delay time t
SHORT
⎯
⎯
10 73
μ
s 9 1
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by
design, not tested in production.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.6_00 S-8241 Series
Seiko Instruments Inc. 13
(3) S-8241ABW, S-8241ABY
Table 12
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition Test
Circuit
DELAY TIME (Ta = 25 °C)
Overcharge detection delay time t
CU
⎯
0.175 0.25 0.325 s 8 1
Overdischarge detection delay time t
DL
⎯
87.5 125 162.5 ms 8 1
Overcurrent 1 detection delay time t
lOV1
⎯
5.6 8 10.4 ms 9 1
Overcurrent 2 detection delay time t
lOV2
⎯
1.4 2 2.6 ms 9 1
Load short-circuiting detection delay time t
SHORT
⎯
⎯
10 50
μ
s 9 1
DELAY TIME (Ta =
−
40 to
+
85 °C)
*1
Overcharge detection delay time t
CU
⎯
0.138 0.25 0.425 s 8 1
Overdischarge detection delay time t
DL
⎯
69 125 212 ms 8 1
Overcurrent 1 detection delay time t
IOV1
⎯
4.4 8 14 ms 9 1
Overcurrent 2 detection delay time t
IOV2
⎯
1.1 2 3.4 ms 9 1
Load short-circuiting detection delay time t
SHORT
⎯
⎯
10 73
μ
s 9 1
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by
design, not tested in production.
(4) S-8241ABR, S-8241ACD
Table 13
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition Test
Circuit
DELAY TIME (Ta = 25 °C)
Overcharge detection delay time t
CU
⎯
1.4 2.0 2.6 s 8 1
Overdischarge detection delay time t
DL
⎯
87.5 125 162.5 ms 8 1
Overcurrent 1 detection delay time t
lOV1
⎯
5.6 8 10.4 ms 9 1
Overcurrent 2 detection delay time t
lOV2
⎯
1.4 2 2.6 ms 9 1
Load short-circuiting detection delay time t
SHORT
⎯
⎯
10 50
μ
s 9 1
DELAY TIME (Ta =
−
40 to
+
85 °C)
*1
Overcharge detection delay time t
CU
⎯
1.1 2.0 3.4 s 8 1
Overdischarge detection delay time t
DL
⎯
69 125 212 ms 8 1
Overcurrent 1 detection delay time t
IOV1
⎯
4.4 8 14 ms 9 1
Overcurrent 2 detection delay time t
IOV2
⎯
1.1 2 3.4 ms 9 1
Load short-circuiting detection delay time t
SHORT
⎯
⎯
10 73
μ
s 9 1
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by
design, not tested in production.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series Rev.7.6_00
Seiko Instruments Inc.
14
(5) S-8241ADF, S-8241ADG
Table 14
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition Test
Circuit
DELAY TIME (Ta = 25 °C)
Overcharge detection delay time t
CU
⎯
0.175
0.25
0.325
ms 8 1
Overdischarge detection delay time t
DL
⎯
21
31
41
ms 8 1
Overcurrent 1 detection delay time t
lOV1
⎯
11
16
21
ms 9 1
Overcurrent 2 detection delay time t
lOV2
⎯
1.4
2
2.6
ms 9 1
Load short-circuiting detection delay time t
SHORT
⎯
⎯
10
50
μ
s 9 1
DELAY TIME (Ta =
−
40 to
+
85 °C)
*1
Overcharge detection delay time t
CU
⎯
0.138 0.25
0.425
s 8 1
Overdischarge detection delay time t
DL
⎯
17 31
53
ms 8 1
Overcurrent 1 detection delay time t
IOV1
⎯
9 16
27
ms 9 1
Overcurrent 2 detection delay time t
IOV2
⎯
1.1 2
3.4
ms 9 1
Load short-circuiting detection delay time t
SHORT
⎯
⎯
10
73
μ
s 9 1
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by
design, not tested in production.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.6_00 S-8241 Series
Seiko Instruments Inc. 15
Test Circuits
Caution Unless otherwise specified, the o utput voltage levels “H” and “L” at CO pin (VCO) and DO pin (VDO) are
judged by the threshold v oltage (1.0 V) of the N-channel FET. Judge the CO pin lev el with respect to VVM
and the DO pin level with resp ect to VSS.
(1) Test Condition 1, Test Circuit 1
(Overcharge detection voltage, Overcharge release voltage, Overdischarge detection voltage, Overdischarge
release voltage)
The overcharge detection voltage (VCU) is defined by the voltage betw een VDD and VSS at which VCO goes “L” from “H”
when the voltage V1 is gradually increased from the normal condition V1 = 3.5 V and V2 = 0 V. The overcharge release
voltage (VCL) is defined by the voltage between VDD and VSS at which VCO goes “H” from “L” when the voltage V1 is
then gradually decreased.
Gradually decreasing the voltage V1, the overdischarge detection voltage (VDL) is defined by the voltage between VDD
and VSS at which VDO goes “L” from “H”. The overdischarge release voltage (VDU) is defined by the voltage between
VDD and VSS at which VDO goes “H” from “L” when the voltage V1 is then gradually increased.
(2) Test Condition 2, Test Circuit 1
(Overcurrent 1 detection voltage, Overcu rren t 2 detection voltage, Load short-circuiting detection voltage)
The overcurrent 1 detection voltage (VIOV1) is defined by the voltage between VDD and VSS at w hich VDO goes “L” from
“H” when the voltage V2 is gradually increased from the normal condition V1 = 3.5 V and V2 = 0 V.
The overcurrent 2 detection voltage (VIOV2) is defined by the voltage between VDD and VSS at w hich VDO goes “L” from
“H” when the voltage V2 is increased at the speed betw een 1 ms and 4 ms from the normal condition V1 = 3.5 V and V2
= 0 V.
The load short-circuiting detection voltage (VSHORT) is defined by the voltage between VDD and VSS at which VDO goes
“L” from “H” when the voltage V2 is increased at the speed betw een 1 μs and 50 μs from the normal condition V1 = 3.5
V and V2 = 0 V.
(3) Test Condition 3, Test Circuit 1
(Charger detection voltage, ( = abnormal charge current detection voltage) )
• Applied only for products with overdischarge hysteresis
Set V1 = 1.8 V and V2 = 0 V under overdischarge condition. Increase V1 gradually, set V1 = (VDU+VDL) / 2 (within
overdischarge hysteresis, overdischarge condition), then decrease V2 from 0 V gradually . The voltage betw een VM
and VSS at which VDO goes “H” from “L” is the charger detection voltage (VCHA).
• Applied only for products without overdischarge hysteresis
Set V1 = 3.5 V and V2 = 0 V under normal condition. Decrease V2 from 0 V gradually . The voltage between VM and
VSS at which VCO goes “L” from “H” is the abnormal charge current detection voltage. The abnormal charge current
detection voltage has the same value as the charger detection voltage (VCHA).
(4) Test Condition 4, Test Circuit 1
(Normal operation current consumption, Power-down current consumption, Overdischarge current
consumption)
Set V1 = 3.5 V and V2 = 0 V under normal condition. The current IDD flowing through VDD pin is the normal operation
consumption current (IOPE).
• For products with power-down function
Set V1 = V2 = 1.5 V under overdischarge condition. The current IDD flowing through VDD pin is the power-down
current consumption (IPDN).
• For products without power-down function
Set V1 = V2 = 1.5 V under overdischarge condition. The current IDD flowing through VDD pin is the overdischarge
current consumption (IOPED).
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series Rev.7.6_00
Seiko Instruments Inc.
16
(5) Test Condition 5, Test Circuit 1
(Internal resistance betw een VM and VDD, Internal resistance between VM and VSS)
Set V1 = 1.8 V and V2 = 0 V under overdischarge condition. Measure current IVM flowing through VM pin. 1.8V / |IVM|
gives the internal resistance (RVMD) between VM and VDD.
Set V1 = V2 = 3.5 V under overcurrent condition. Measure current IVM flowing through VM pin. 3.5 V / |IVM| gives the
internal resistance (RVMS) between VM and VSS.
(6) Test Condition 6, Test Circuit 1
(CO pin H resistance, CO pin L resistance)
Set V1 = 3.5 V, V2 = 0 V and V3 = 3.0 V under normal condition. Measure current ICO flowing through CO pin. 0.5 V /
|ICO| is the CO pin H resistance (RCOH).
Set V1 = 4.5 V, V2 = 0 V and V3 = 0.5 V under overcharge condition. Measure current ICO flowing through CO pin. 0.5
V / |ICO| is the CO pin L resistance (RCOL).
(7) Test Condition 7, Test Circuit 1
(DO pin H resistance, DO pin L resistance)
Set V1 = 3.5 V, V2 = 0 V and V4 = 3.0 V under normal condition. Measure current IDO flowing through DO pin. 0.5 V /
|IDO| gives the DO pin H resistance (RDOH).
Set V1 = 1.8 V, V2 = 0 V and V4 = 0.5 V under overdischarge condition. Measure current IDO flowing through DO pin.
0.5 V / |IDO| gives the DO pin L resistance (RDOL).
(8) Test Condition 8, Test Circuit 1
(Overcharge detection delay time, Overdischarge detection delay time)
Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V1 gradually to overcharge detection voltage VCU - 0.2 V
and increase V1 to the overcharge detection voltage VCU + 0.2 V momentarily (within 10 μs). The time after V1 becomes
the overcharge detection voltage until VCO goes "L" is the overcharge detection delay time (tCU).
Set V1 = 3.5 V and V2 = 0 V under normal condition. Decrease V1 gradually to overdischarge detection voltage VDL +
0.2 V and decrease V1 to the overdischarge detection voltage VDL - 0.2 V momentarily (within 10 μs). The time after V1
becomes the overdischarge detection voltage VDL until VDO goes "L" is the overdischarge detection delay time (tDL).
(9) Test Condition 9, Test Circuit 1
(Overcurrent 1 detection delay time, Overcurrent 2 detection delay time, Load short-circuiting detection delay
time, Abnormal charge current detection delay time)
Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V2 from 0 V to 0.35 V momentarily (within 10 μs). T he
time after V2 becomes overcurrent 1 detection voltage (VIOV1) until VDO goes "L" is overcurrent 1 detection delay time
(tIOV1).
Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V2 from 0 V to 0.7 V momentarily (w ithin 1 μs). The time
after V2 becomes overcurrent 1 detection voltage (VIOV1) until VDO goes "L" is overcurrent 2 detection delay time (tIOV2).
Caution The overcurrent 2 detection delay time starts when the overcurrent 1 is detected, since the delay
circuit is common.
Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V2 from 0 V to 3.0 V momentarily (w ithin 1 μs). The time
after V2 becomes the load short-circuiting detection voltage (VSHORT) until VDO goes "L" is the load short-circuiting
detection delay time (tSHORT).
Set V1 = 3.5 V and V2 = 0 V under normal condition. Decrease V2 from 0 V to -2.5 V momentarily (within 10 μs). The
time after V2 becomes the charger detection voltage (VCHA) until VCO goes "L" is the abnormal charge current detection
delay time. The abnormal charge current detection delay time has the same value as the overcharge detection delay
time.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.6_00 S-8241 Series
Seiko Instruments Inc. 17
(10) Test Condition 10, Test Circuit 1 (Product with 0 V battery charging function)
(0 V battery charge start charger voltage)
Set V1 = V2 = 0 V and decrease V2 gradually. The voltage between VDD and VM at which VCO goes “H” (VVM + 0.1 V
or higher) is the 0 V battery charge start charger voltage (V0CHA).
(11) Test Condition 11, Test Circuit 1 (Product with 0 V battery charge inhibiting function)
(0 V battery charge inhibiting battery voltage)
Set V1 = 0 V and V2 = -4 V. Increase V1 gradually. The voltage between VDD and VSS at which VCO goes “H” (VVM +
0.1 V or higher) is the 0 V battery charge inhibiting battery voltage (V0INH).
VSS
DO CO
VDD
S-8241 Series
V1
IDD
VM
V2
Test circuit 1
I
V
M
A
V
A
VDO
COM
A
IDO
V
VCO
A ICO
V4 V3
Figure 5
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series Rev.7.6_00
Seiko Instruments Inc.
18
Operation
Remark Refer to the “ Battery Protection IC Connection Example”.
1. Normal Condition
The S-8241 monitors the voltage of the battery connected to VDD and VSS pins and the voltage difference between VM
and VSS pins to control charging and discharging. When the battery voltage is in the range from the overdischarge
detection voltage (VDL) to the overcharge detection voltage (VCU), and the VM pin voltage is in the range from the
charger detection voltage (VCHA) to the overcurrent 1 detection voltage (VIOV1) (the current flowing through the battery is
equal to or lower than a specified value), the IC turns both the charging and discharging control FETs on. This condition
is called normal condition and in this condition charging and discharging can be carried out freely.
2. Overcurrent Condition
When the discharging current becomes equal to or higher than a specified value (the VM pin voltage is equal to or higher
than the overcurrent detection voltage) during discharging under normal condition and the state continues for the
overcurrent detection delay time or longer, the S-8241 turns the discharging control FET off to stop discharging. This
condition is called overcurrent condition. (The overcurrent includes overcurrent 1, overcurrent 2, or load
short-circuiting.)
The VM and VSS pins are shorted internally by the RVMS resistor under the overcurrent condition. When a load is
connected, the VM pin voltage equals the VDD voltage due to the load.
The overcurrent condition returns to the normal condition when the load is released and the impedance between the
EB+ and EB- pins (see the Figure 12 for a connection example) becomes higher than the automatic recoverable
impedance (see the equation [1] below). When the load is removed, the VM pin goes back to the VSS potential since the
VM pin is shorted the VSS pin with the RVMS resistor. Detecting that the VM pin potential is low er than the overcurrent 1
detection voltage (VIOV1), the IC returns to the normal condition.
Automatic recoverable impedance = {Battery voltage / (Minimum value of overcurrent 1 detection voltage) − 1} x (RVMS
maximum value) --- [1]
Example: Battery voltage = 3.5 V and overcurrent 1 detection voltage (VIOV1) = 0.1 V
Automatic recoverable impedance = (3.5 V / 0.07 V −1) x 200 kΩ = 9.8 MΩ
Remark The automatic recoverable impedance varies with the battery voltage and overcurrent 1 detection voltage
settings. Determine the minimum value of the open load using the above equation [1] to have automatic
recovery from the overcurrent condition w ork after checking the overcurrent 1 detection voltage setting for the
IC.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.6_00 S-8241 Series
Seiko Instruments Inc. 19
3. Overcharge Condition
When the battery voltage becomes higher than the overcharge detection voltage (VCU) during charging under normal
condition and the state continues for the overcharge detection delay time (tCU) or longer, the S-8241 turns the charging
control FET off to stop charging. This condition is called the overcharge condition.
The overcharge condition is released in the following two cases ((1) and (2)) depending on the products w ith and without
overcharge hysteresis:
Products with overcharge hysteresis (overcharge detection voltage (V
CU
) > overcharge release voltage (V
CL
))
(1) When the battery voltage drops below the overcharge release voltage (VCL), the S-8241 turns the charging control
FET on and returns to the normal condition.
(2) When a load is connected and discharging starts, the S-8241 turns the charging control FET on and returns to the
normal condition. The release mechanism is as follows: the discharging current flows through an internal parasitic
diode of the charging FET immediately after a load is connected and discharging starts, and the VM pin voltage
increases about 0.7 V (Vf voltage of the diode) from the VSS pin voltage momentarily. The IC detects this voltage
(being higher than the overcurrent 1 detection voltage) and releases the overcharge condition. Consequently, in the
case that the battery voltage is equal to or lower than the overcharge detection voltage (VCU), the IC returns to the
normal condition immediately, but in the case the battery voltage is higher than the overcharge detection voltage
(VCU), the IC does not return to the normal condition until the battery voltage drops below the overcharge detection
voltage (VCU) even if the load is connected. In addition if the VM pin voltage is equal to or low er than the overcurrent
1 detection voltage when a load is connected and discharging starts, the IC does not return to the normal condition.
Remark If the battery is charged to a voltage higher than the overcharge detection voltage (VCU) and the battery
voltage does not drop below the overcharge detection voltage (VCU) even when a heavy load, which
causes an overcurrent, is connected, the overcurrent 1 and overcurrent 2 do not work until the battery
voltage drops below the overcharge detection voltage (VCU). Since an actual battery has, however, an
internal impedance of several dozens of mΩ, and the battery voltage drops immediately after a heavy load
which causes an overcurrent is connected, the overcurrent 1 and overcurrent 2 work. Detection of load
short-circuiting works regardless of the battery voltage.
Products without overcharge hysteresis (Overcharge detection voltage (V
CU
) = Overcharge release voltage (V
CL
))
(1) When the battery voltage drops below the overcharge release voltage (VCL), the S-8241 turn the charging control
FET on and returns to the normal condition.
(2) When a load is connected and discharging starts, the S-8241 turns the charging control FET on and returns to the
normal condition. The release mechanism is explained as follows : the discharging current flows through an internal
parasitic diode of the charging FET immediately after a load is connected and discharging starts, and the VM pin
voltage increases about 0.7 V (Vf voltage of the diode) from the VSS pin voltage momentarily. Detecting this voltage
(being higher than the overcurrent 1 detection voltage), the IC increases the overcharge detection voltage about 50
mV, and releases the overcharge condition. Consequently, when the battery voltage is equal to or lower than the
overcharge detection voltage (VCU) + 50 mV, the S-8241 immediately returns to the normal condition. But the
battery voltage is higher than the overcharge detection voltage (VCU) + 50 mV, the S-8241 does not return to the
normal condition until the battery voltage drops below the overcharge detection voltage (VCU) + 50 mV even if a load
is connected. If the VM pin voltage is equal to or lower than the overcurrent 1 detection voltage when a load is
connected and discharging starts, the S-8241 does not return to the normal condition.
Remark If the battery is charged to a voltage higher than the overcharge detection voltage (VCU) and the battery
voltage does not drop below the overcharge detection voltage (VCU) + 50 mV even when a heavy load,
which causes an overcurrent, is connected, the overcurrent 1 and overcurrent 2 do not work until the
battery voltage drops bellow the overcharge detection voltage (VCU) + 50 mV. Since an actual battery has,
however, an internal impedance of several dozens of mΩ, and the battery voltage drops immediately after
a heavy load which causes an overcurrent is connected, the overcurrent 1 and overcurrent 2 work.
Detection of load short-circuiting works regardless of the battery voltage.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series Rev.7.6_00
Seiko Instruments Inc.
20
4. Overdischarge Condition
With power-down function
When the battery voltage drops below the overdischarge detection voltage (VDL) during discharging under normal
condition and it continues for the overdischarge detection delay time (tDL) or longer, the S-8241 turns the discharging
control FET off and stops discharging. T his condition is called overdischarge condition. After the discharging control
FET is turned off, the VM pin is pulled up by the RVMD resistor between VM and VDD in the IC. Meanwhile the potential
difference between VM and VDD drops below 1.3 V (typ.) (the load short-circuiting detection voltage), current
consumption of the IC is reduced to the power-down current consumption (I PDN). This condition is called power-down
condition. The VM and VDD pins are shorted by the RVMD resistor in the IC under the overdischarge and power-down
conditions.
The power-dow n condition is released when a charger is connected and the potential difference between VM and VDD
becomes 1.3 V (typ.) or higher (load short-circuiting detection voltage). At this time, the FET is still off. When the battery
voltage becomes the overdischarge detection voltage (VDL) or higher*1, the S-8241 turns the FET on and changes to the
normal condition from the overdischarge condition.
*1. If the VM pin voltage is no less than the charger detection voltage (VCHA), when the battery under overdischarge
condition is connected to a charger, the overdischarge condition is released (the discharging control FET is turned
on) as usual, provided that the battery voltage reaches the overdischarge release voltage (VDU) or higher.
Without power-down function
When the battery voltage drops below the overdischarge detection voltage (VDL) during discharging under normal
condition and it continues for the overdischarge detection delay time (tDL) or longer, the S-8241 turns the discharging
control FET off and stops discharging. When the discharging control FET is turned off, the VM pin is pulled up by the
RVMD resistor betw een VM and VDD in the IC. Meanwhile the potential difference between VM and VDD drops below 1.3
V (typ.) (the load short-circuiting detection voltage), current consumption of the IC is reduced to the overdischarge
current consumption (IOPED). This condition is called overdischarge condition. The VM and VDD pins are shorted by the
RVMD resistor in the IC under the overdischarge condition.
When a charger is connected, the overdischarge condition is released in the same way as explained above in respect to
products having the power-dow n function. For products without the pow er-down function, in addition, even if the charger
is not connected, the S-8241 turns the discharging control FET on and changes to the normal condition from the
overdischarge condition provided that the load is disconnected and that the potential difference between VM and VSS
drops below the overcurrent 1 detection voltage (VIOV1), since the VM pin is pulled down by the RVMS resistor between
VM and VSS in the IC when the battery voltage reaches the overdischarge release voltage (VDU) or higher.
5. Charger Detection
If the VM pin voltage is lower than the charger detection voltage (VCHA) when a battery in overdischarge condition is
connected to a charger, overdischarge hysteresis is released, and w hen the battery voltage becomes equal to or higher
than the overdischarge detection voltage (VDL), the overdischarge condition is released (the discharging control FET is
turned on). This action is called charger detection. (The charger detection reduces the time for charging in which
charging current flows through the internal parasitic diode in the discharging control FET) .
If the VM pin voltage is not lower than the charger detection voltage (VCHA) w hen a battery in overdischarge condition is
connected to a charger, the overdischarge condition is released (the discharging control FET is turned on) as usual,
when the battery voltage reaches the overdischarge release voltage (VDU) or higher.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.6_00 S-8241 Series
Seiko Instruments Inc. 21
6. Abnormal Charge Current Detection
If the VM pin voltage drops below the charger detection voltage (VCHA) during charging under the normal condition and
it continues for the overcharge detection delay time (tCU) or longer, the S-8241 turns the charging control FET off and
stops charging. This action is called abnormal charge current detection.
Abnormal charge current detection works w hen the discharging control FET is on (DO pin voltage is “H”) and the VM pin
voltage drops below the charger detection voltage (VCHA). When an abnormal charge current flows into a battery in the
overdischarge condition, the S-8241 consequently turns the charging control FET off and stops charging after the
battery voltage becomes the overdischarge detection voltage or higher (DO pin voltage becomes “H”) and the
overcharge detection delay time (tCU) elapses.
Abnormal charge current detection is released when the voltage difference between VM pin and VSS pin becomes
lower than the charger detection voltage (VCHA) by separating the charger.
Since the 0 V battery charging function has higher priority than the abnormal charge current detection function,
abnormal charge current may not be detected by the product with the 0 V battery charging function while the battery
voltage is low.
7. Delay Circuits
The detection delay times are determined by dividing a clock of approximately 2 kHz by the counter.
[Example] Overcharge detection delay time (= abnormal charge current detection delay time): 1.0 s
Overdischarge detection delay time: 125 ms
Overcurrent 1 detection delay time: 8 ms
Overcurrent 2 detection delay time: 2 ms
Caution 1. Counting for the overcurrent 2 detection delay time starts when the overcurrent 1 is detected.
Having detected the overcurrent 1, if the overcurrent 2 is detected after the overcurrent 2 detection
delay time, the S-8241 turns the discharging control FET off as shown in the Figure 6. In this case,
the overcurrent 2 detection delay time may seem to be longer or overcurrent 1 detection delay time
may seem to be shorter than expected.
D
O pin
V
M
p
in
VDD
VDD
Time
T
ime
VIOV1
V
SS
V
SS
VIOV2
Overcur rent 2 detection dela
y
time
(
tI
O
V2
)
Figure 6
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series Rev.7.6_00
Seiko Instruments Inc.
22
2. <For products with pow er-down function>
After having detected an overcurrent (overcurrent 1, overcurrent 2, short-circuiting), the state is
held for the overdischarge detection delay time or longer without releasing the load, the condition
changes to the power-down condition when the battery voltage drops below the overdischarge
detection voltage. If the battery voltage drops below the overdischarge detection voltage due to
overcurrent, the discharging control FET is turned off when the overcurrent is detected. If the
battery voltage recovers slowly and if the battery voltage after the overdischarge detection delay
time is equal to or lower than the overdischarge detection voltage, the S-8241 changes to the
power-down condition.
<For products without power-down function>
After having detected an overcurrent (overcurrent 1, overcurrent 2, short-circuiting), the state is
held for the overdischarge detection delay time or longer without releasing the load, the condition
changes to the overdischarge condition when the battery vo ltage drops below the overdischarge
detection voltage. If the battery voltage drops below the overdischarge detection voltage due to
overcurrent, the discharging control FET is turned off when the overcurrent is detected. If the
battery voltage recovers slowly and if the battery voltage after the overdischarge detection delay
time is equal to or lower than the overdischarge detection voltage, the S-8241 changes to the
overdischarge condition.
8. 0 V Battery Charging Function
This function enables the charging of a connected battery whose voltage is 0 V by self-discharge. When a charger
having 0 V battery start charging charger voltage (V0CHA) or higher is connected between EB+ and EB- pins, the
charging control FET gate is fixed to VDD potential. When the voltage between the gate and the source of the charging
control FET becomes equal to or higher than the turn-on voltage by the charger voltage, the charging control FET is
turned on to start charging. At this time, the discharging control FET is off and the charging current flows through the
internal parasitic diode in the discharging control FET. If the battery voltage becomes equal to or higher than the
overdischarge release voltage (VDU), the normal condition returns.
Caution 1. Some battery providers do not recommend chargin g of completely discharged batteries. Please
refer to battery providers before the selection of 0 V battery charging function.
2. The 0 V battery charging function has higher priority than the abnormal charge current detection
function. Consequently, a product with the 0 V battery charging function charges a battery and
abnormal charge current cannot be detected during the battery voltage is low (at most 1.8 V or
low er).
3. When a battery is connected to the IC for the first time, the IC may not enter the normal condition
in which discharging is possible. In this case, set the VM pin voltage equal to the VSS voltage
(short the VM and VSS pins or connect a charger) to enter the normal condition.
9. 0 V Battery Charge Inhibiting Function
This function forbids the charging of a connected battery which is short-circuited internally (0 V battery). When the
battery voltage becomes 0.9 V (typ.) or lower, the charging control FET gate is fixed to EB- potential to forbid charging.
Charging can be performed, when the battery voltage is the 0 V battery charge inhibiting voltage (V0INH) or higher.
Caution 1. Some battery providers do not recommend chargin g of completely discharged batteries. Please
refer to battery providers before the selection of 0 V battery charging function.
2. When a battery is connected to the IC for the first time, the IC may not enter the normal condition
in which discharging is possible. In this case, set the VM pin voltage equal to the VSS voltage
(short the VM and VSS pins or connect a charger) to enter the normal condition.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.6_00 S-8241 Series
Seiko Instruments Inc. 23
Timing Chart
(1) Overcharge and overdischarge detection (for products with power-down function)
VCU
VCL
VDU
VDL
VDD
VSS
VDD
VSS
VDD
VIOV 1
VSS
VCHA
Mode (2)
(1 ) (1 )
N ote: (1) Normal mo de, (2) Overcharge m ode, (3) Ov e rdi scharge m ode, (4) Overcur rent m ode
The charger i s assumed to c harge w ith a constant curr ent.
Battery
voltage
DO pin
CO pin
V
M pin
Charger
connected
Load
connected Overc har ge detec tion delay t im e (t CU) Overd is c harg e det ec t io n dela y tim e ( t DL)
(3) (1)
Figure 7
(2) Overcharge and overdischarge detection (for products without power-down function)
VCU
VCL
VDU
VDL
Batte r y
voltage
DO pin
VDD
VSS
V
DD
VSS
VDD
VIOV1
VSS
VCHA
CO pin
V
M pin
Charger
connected
Overcharge detection delay t ime (tCU)
Lo ad
connected
Mode (2)
(
1
)
N ote: (1) N orm al m ode, (2) Overcharge m ode, (3) Overdis charge m ode, (4) Ov erc urrent mod e
The charger is assum ed to charge with a consta nt current.
(
1
)
(3)
(
1
)
(3 )
(
1
)
Ov erdi sc h arg e detect ion dela y tim e (tDL)O verd is charg e detectio n dela y tim e (tDL)
Figure 8
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series Rev.7.6_00
Seiko Instruments Inc.
24
(3) Overcurrent detection
Figure 9
(4) Charger detection
VCU
VCL
VDU
VDL
VDD
VSS
VDD
VSS
VDD
VSS
VCHA
Over discharge detecti on delay time ( tDL)
If VM pin v o ltage < VCHA
Ove r di sc har ge i s released at
overdischar ge det ection v oltage ( VDL)
(1)
(3)
(1)
Battery
voltage
DO pin
CO pin
VM pin
Charger conn ection
Load co nnection
Mode
Note: (1) Normal m ode, (2) Overc h arge mode, (3) Overdisc harge mode, (4) Overcurrent mode
The charger is assumed to c harge with cons tant current .
Figure 10
V
CU
V
CL
V
DU
V
DL
V
DD
V
SS
V
DD
V
SS
(1)
(4)
(1)
(4)
(1)
(4)
(1)
V
DD
V
IOV1
V
SS
V
SHORT
V
IOV2
Overcurrent 2 detection delay time (tIOV2)
Load short-circuiting detection delay time (t SHORT)
Battery
voltage
DO pin
CO pin
VM pin
Charger connection
Load connection
Mode
Note: (1) Normal mode, (2) Overcharge mode, (3) Overdischarge mode, (4) Overcurrent mode
The charger is assumed to charge with constant current.
Overcurrent 1 detection delay time (tIOV1)
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.6_00 S-8241 Series
Seiko Instruments Inc. 25
(5) Abnormal charge current detection
A
bnorm al char ging cur rent d et ec tion de lay time
( = Overcharge detection delay time (tCU))
Ov erdis c har g e d etection delay tim e (tDL)
(3) (1) (2) (1)
(1)
Battery
voltage
DO pin
CO pin
VM pin
Charger connection
Load connec tion
Mode
Note: (1) Normal m ode, (2) Overcharge mode, (3) Overdi s c harge mode, (4) Overc urrent mode
The charger is ass umed to charge with cons tant current.
VCU
VCL
VDU
VDL
VDD
VSS
VDD
VSS
VDD
VSS
VCHA
Figure 11
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series Rev.7.6_00
Seiko Instruments Inc.
26
Battery Protection IC Connection Example
R1 : 470
Ω
Battery C1 :
0.1
μ
F
VSS DO
VDD
CO VM
S-8241 Series
FET1 FET2 EB
−
EB
+
R2 : 1 k
Ω
Figure 12
Table 15 Constants for External Components
Symbol Parts Purpose Typ. min. max. Remarks
FET1 Nch
MOS_FET Discharge control
⎯
⎯
⎯
0.4 V
≤
Threshold voltage
≤
overdischarge detection voltage.
*1
Withstand voltage between gate and
source
≥
Charger voltage
*2
FET2 Nch
MOS_FET Charge control
⎯
⎯
⎯
0.4 V
≤
Threshold voltage
≤
overdischarge detection voltage.
*1
Withstand voltage between gate and
source
≥
Charger voltage
*2
R1 Resistor
Protection for ESD and
power fluctuation 470
Ω
300
Ω
R2 value Relation R1
≤
R2 should be
maintained.
*3
C1 Capacitor
Protection for power
fluctuation 0.1
μ
F 0.01
μ
F 1.0
μ
F Install a capacitor of 0.01
μ
F or
higher between VDD and VSS.
*4
R2 Resistor
Protection for charger
reverse connection 1 k
Ω
300
Ω
1.3 k
Ω
To suppress current flow caused by
reverse connection of a charger, set the
resistance within the range from 300
Ω
to
1.3 k
Ω
.
*5
*1.
If an FET with a threshold voltage of 0.4 V or lower is used, the FET may fail to cut the charging current.
If an FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used, discharging may stop
before overdischarge is detected.
*2.
If the withstand voltage between the gate and source is lower than the charger voltage, the FET may break.
*3.
If R1 has a higher resistance than R2 and if a charger is connected reversely, current flows from the charger to the IC and the
voltage between VDD and VSS may exceed the absolute maximum rating. Install a resistor of 300
Ω
or higher as R1 for ESD
protection.
If R1 has a high resistance, the overcharge detection voltage increases by IC current consumption.
*4.
If a capacitor C1 is less than 0.01
μ
F, DO may oscillate when load short-circuiting is detected, a charger is connected
reversely, or overcurrent 1 or 2 is detected.
A capacitor of 0.01
μ
F or higher as C1 should be installed. In some types of batteries DO oscillation may not stop unless the
C1 capacity is increased. Set the C1 capacity by evaluating the actual application.
*5.
If R2 is set to less than 300
Ω
, a current which is bigger than the power dissipation flows through the IC and the IC may break
when a charger is connected reversely. If a resistor bigger than 1.3 k
Ω
is installed as R2, the charging current may not be cut
when a high-voltage charger is connected.
Caution 1. The above constants may be changed without notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above example
of connection. In addition, the example of connection shown above and the constant do not guarantee
proper operation. Perform thorough evaluation using the
actual application to set the constant.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.6_00 S-8241 Series
Seiko Instruments Inc. 27
Precautions
• Pay attention to the operating conditions for input/output voltage and load current so that the power loss in the IC does
not exceed the power dissipation of the package.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• SII claims no responsibility for any and all disputes arising out of or in connection with any infringement by products
including this IC of patents owned by a third party.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series Rev.7.6_00
Seiko Instruments Inc.
28
Characteristics (Typical Data)
1. Detection/release voltage temperature characteristics
4.23
4.25
4.27
4.29
4.31
4.33
-50 -25 0 25 50 75 100
Ta(°C)
VCU (V)
Overchar ge detecti on vol tage vs . tem perature
4.13
4.15
4.17
4.19
4.21
4.23
-50 -25 0 25 50 75 100
Ta(°C)
VCL (V)
Overcharge release voltage vs. temperature
2.20
2.24
2.28
2.32
2.36
2.40
-50 -25 0 25 50 75 100
Ta(°C)
VDL (V)
Overdischarge detection voltage vs. temperature
2.30
2.34
2.38
2.42
2.46
2.50
-50 -25 0 25 50 75 100
Ta(°C)
VDU (V)
Overdischarge release voltage vs. temperature
0.090
0.095
0.100
0.105
0.110
-50 -25 0 25 50 75 100
Ta(°C)
VIOV1 (V)
Overcurrent 1 detection voltage vs. temperature
0.40
0.45
0.50
0.55
0.60
-50 -25 0 25 50 75 100
Ta(°C)
VIOV2 (V)
Overcurrent 2 detection voltage vs. temperature
2. Current consumption temperature characteristics
0
1
2
3
4
5
6
-25 0 25 50 75
Ta(°C)
IOPE (μA)
Current consumption vs. Temperature in normal mode
-50 100
0.00
0.02
0.04
0.06
0.08
0.10
-50 -25 0 25 50 75 100
Ta(°C)
IPDN (μA)
Current consumption vs. Temperature in power-down mode
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.6_00 S-8241 Series
Seiko Instruments Inc. 29
3. Current consumption Power voltage characteristics (Ta = 25 °C)
Current consumption −
power supply volatge dependency
0
5
10
15
20
0 2 4 6 8 10
VDD(V)
IOPE (μA)
VM = VSS
4. Detection/release delay time temperature characteristics
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100
Ta(°C)
tCU (s)
Overcharge detection delay time vs. temperature
0.0
0.2
0.4
0.6
0.8
1.0
-50 -25 0 25 50 75 100
Ta(°C)
tCL (ms)
Overcharge release delay time vs. temperature
0
50
100
150
200
250
-50 -25 0 25 50 100
Ta(°C)
tDL (ms)
Overdischarge detection delay time vs. temperature
75
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100
Ta(°C)
tCU (s)
Overdischarge release delay time vs. temperature
0
4
8
12
16
-50 -25 0 25 50 75
100
Ta(°C)
tIOV1 (ms)
Overcurrent 1 detection delay time vs. temperature
0
100
200
300
400
500
-50 -25 0 25 50 75 100
Ta(°C)
tIOV1 (μs) Release
Overcurrent 1 release delay time vs. temperature
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series Rev.7.6_00
Seiko Instruments Inc.
30
0
1
2
3
4
-50 -25 0 25 50 75 100
Ta(°C)
tIOV2 (ms)
Overcurrent 2 detection delay time vs. temperature
0
10
20
30
40
50
-50 -25 0 25 50 75 100
Ta(°C)
tSHORT (μs)
Load short-circuiting delay time vs. temperature
5. Delay time power-voltage characteristics (Ta = 25 °C)
Overcurrent 1 detection delay time vs. power supply
voltage dependency
0
4
8
12
16
2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDD(V)
tIOV1 (ms)
Overcurrent 2 detection delay time vs. power supply
voltage dependency
0
1
2
3
4
2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDD(V)
tIOV2 (ms)
6. CO pin/DO pin output current characteristics (Ta = 25 °C)
CO pin source current characteristics
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0 0 1 2 3 4
VCO(V)
ICO (mA)
VDD = 3.5 V, VSS = VM = 0 V CO pin sink current characteristics
0
2
4
6
8
10
12
0 1 2 3 4 5
VCO(V)
ICO (μA)
VDD = 4.5 V, VSS = VM = 0 V
DO pin source current characteristics
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0 0 1 2 3 4
VDO(V)
IDO (mA)
VDD = 3.5 V, VSS = VM = 0 V DO pin sink current characteristics
0.0
0.5
1.0
1.5
2.0
2.5
0.0 0.5 1.0 1.5 2.0
VDO(V)
IDO (mA)
VDD = 1.8 V, VSS = VM = 0 V
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
2.9±0.2
1.9±0.2
0.95±0.1
0.4±0.1
0.16 +0.1
-0.06
123
4
5
No. MP005-A-P-SD-1.2
MP005-A-P-SD-1.2
SOT235-A-PKG Dimensions
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
ø1.5 +0.1
-0 2.0±0.05
ø1.0 +0.2
-0 4.0±0.1
1.4±0.2
0.25±0.1
3.2±0.2
123
45
No. MP005-A-C-SD-2.1
MP005-A-C-SD-2.1
SOT235-A-Carrier Tape
Feed direction
4.0±0.1(10 pitches:40.0±0.2)
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY. 3,000
No. MP005-A-R-SD-1.1
MP005-A-R-SD-1.1
SOT235-A-Reel
Enlarged drawing in the central part
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-6A-A-PKG Dimensions
PG006-A-P-SD-2.0
No. PG006-A-P-SD-2.0
0.2±0.05
0.48±0.02
0.08 +0.05
-0.02
0.5
1.57±0.03
123
45
6
Feed direction
4.0±0.1
2.0±0.05
4.0±0.1
ø1.5 +0.1
-0
ø0.5
1.85±0.05 0.65±0.05
0.25±0.05
5°
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
PG006-A-C-SD-1.0
SNT-6A-A-Carrier Tape
No. PG006-A-C-SD-1.0
+0.1
-0
1
2
4
3
56
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY.
No. PG006-A-R-SD-1.0
PG006-A-R-SD-1.0
Enlarged drawing in the central part
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-6A-A-Reel
5,000
No.
TITLE
SCALE
UNIT mm
SNT-6A-A-Land Recommendation
Seiko Instruments Inc.
PG006-A-L-SD-3.0
No. PG006-A-L-SD-3.0
0.3
0.20.3
0.20.3
0.52
1.36
0.52
Caution Making the wire pattern under the package is possible. However, note that the package
may be upraised due to the thickness made by the silk screen printing and of a solder
resist on the pattern because this package does not have the standoff.
•
The information described herein is subject to change without notice.
• Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
• When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
• Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Seiko Instruments Inc. is strictly prohibited.
• The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus
installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc.
• Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.
