©2000 Fairchild Semiconductor International Rev. A, February 2000
KSA1142
PNP Epitaxial Silicon Transistor
Absolute Maximu m Rating s TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pul sed
hFE Classifi cation
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage - 180 V
VCEO Collector-E mitter Voltage - 180 V
VEBO Emitter-Base Voltage - 5 V
ICCollector Current - 100 mA
PCCollector Dissipation (Ta=25°C) 1.2 W
PCCollector Dissipation (TC=25°C) 8 W
TJJunction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Unit s
ICBO Collector Cut-off Current VCB = - 180V, IE = 0 - 1 µA
IEBO Emitter Cut-off Current VEB = - 3V, IC = 0 - 1 µA
hFE1
hFE2
* DC Current Gain VCE = - 5V, IC = - 1mA
VCE = - 5V, IC = - 10mA 90
100 200
200 320
VCE(sat) * Collector-Emitter Saturation Voltage IC = - 50mA, IB = - 5mA - 0.16 - 0.5 V
VBE(sat) * Base-Emitter Saturation Voltage IC = - 50mA, IB = - 5mA - 0.8 - 1.5 V
fTCurrent Gain Bandwidth Product VCE = - 10V, IC = - 20mA 180 MHz
Cob Output Capacitance VCB = - 10V, IE = 0, f=1MHz 4.5 7 pF
NF Noise Figure VCE = - 10V, IC = - 1mA
RS = 10kΩ, f = 1MHz 4dB
Classification O Y
hFE2 100 ~ 200 160 ~ 320
KSA1142
Audio Frequency Power Amplifier
High Freqency Power Amplifier
• Complement to KSC2682
1TO-126
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
KSA1142
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
0 -20 -40 -60 -80 -100 -120 -140 -160
0
-20
-40
-60
-80
-100
-120
-140
-160
IB = -500㎂IB = -450㎂IB = -400㎂
IB = -350㎂
I
B
= -300㎂
I
B
= -250㎂
I
B
= -200㎂
Pulse Test
I
B
= -150㎂
IB = -100㎂
IB = -50㎂
IB = 0
Ic[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100
1
10
100
1000
VCE = -5V
Puls e T est
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10 100
-0.01
-0.1
-1
-10
IC = 10 IB
Pulse Tes t
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000
1
10
100
f=1.0MHz
IE=0(COB)
IE=0(CIB)
Cob
Cib
Cob(PF)Cib(PF),CAPACITANCE
VCB(v), COLLECTOR-BASE VOLTAGE
VCB(v), EMITTER-BASE VOLTAGE
-1 -10 -100
10
100
1000
VCE = -10V
fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000
-1
-10
-100
-1000
VCEO MAX.
DC (50ms)
S/b
Limited
Dissipation
Limited
IC (DC) Max. 10ms
PW=1ms
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
©2000 Fairchild Semiconductor International
KSA1142
Rev. A, February 2000
Typical Characteristics (Continued)
Figure 7. Derating Curve of Safe Operating Areas Figure 8. Power Derating
0 50 100 150 200
0
20
40
60
80
100
120
140
160
Dissipation Limited
S/b Limited
dT(%),IcDERATING
TC[oC], CASE TEMPERATURE
0 50 100 150 200 250
0
2
4
6
8
10
PC[W], POWE R DISSI PATIO N
TC[oC], CASE TEMPERATURE
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
KSA1142
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2000 Fairchild Semiconductor International Rev. E
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
