Bulletin I27105 rev. C 10/06 T..RIA SERIES MEDIUM POWER PHASE CONTROL THYRISTORS Features Power Modules Electrically isolated base plate Types up to 1200 V RRM 50 A 70 A 90 A 3500 VRMS isolating voltage Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL E78996 approved RoHS Compliant Description These series of T-modules are inteded for general purpose applications such as battery chargers, welders and plating equipment, regulated power supplies and temperature and speed control circuits. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. Major Ratings and Characteristics Parameters T50RIA T70RIA T90RIA Units A IT(AV) 50 70 90 @TC 70 70 70 o IT(RMS) 80 110 141 A ITSM @50Hz 1310 1660 1780 A @ 60Hz 1370 1740 1870 A @ 50Hz 8550 13860 15900 A2s @ 60Hz 7800 12650 14500 A2s 85500 138500 159100 A2s I2t I2t VDRM/VRRM TJ Document Number: 93756 100 to 1200 -40 to 125 C V o C www.vishay.com 1 T..RIA Series Bulletin I27105 rev. C 10/06 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code V VDRM/VRRM, maximum repetitive peak reverse voltage V VRSM, maximum non-repetitive peak reverse voltage A 10 100 150 20 200 300 T50RIA 40 400 500 T70RIA 60 600 700 T90RIA 80 800 900 100 120 1000 1200 1100 1300 IDRM/IRRM max. @ 25C 100 On-state Conduction Parameter T50RIA T70RIA T90RIA IT(AV) Max. average on-state current 50 70 90 A @ Case temperature 70 70 70 C 80 110 141 A Maximum peak, one-cycle 1310 1660 1780 A on-state, non-repetitive 1370 1740 1870 t = 8.3ms reapplied surge current 1100 1400 1500 t = 10ms 100% VRRM 1150 1460 1570 I T(RMS) Max. RMS on-state current ITSM 2 It I t 2 2 Maximum I t for fusing Maximum I t for fusing 2 VT(TO)1 Low level value of threshold Units Conditions 2 As 180 conduction, half sine wave t = 10ms No voltage t = 8.3ms reapplied Sine half wave, t = 10ms No voltage Initial TJ = TJ max. 8550 13860 15900 7800 12650 14500 t = 8.3ms reapplied 6050 9800 11250 t = 10ms 100% VRRM 5520 8950 10270 t = 8.3ms reapplied 85500 138500 159100 A s 0.97 0.77 0.78 V 1.13 0.88 0.88 4.1 3.6 2.9 3.3 3.2 2.6 1.60 1.55 1.55 2 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), @ TJ max. voltage VT(TO)2 High level value of threshold (I > x IT(AV)), @ TJ max. voltage r t1 Low level value on-state m (16.7% x x IT(AV) < I < x IT(AV)), @ TJ max. slope resistance r t2 High level value on-state (I > x IT(AV)), @ TJ max. slope resistance VTM Maximum on-state voltage drop V ITM = x IT(AV), TJ = 25C., tp = 400s square Av. power = VT(TO) x IT(AV) + rf x (IT(RMS))2 IH Maximum holding current 200 mA Anode supply = 6V initial IT = 30A, TJ = 25C IL Maximum latching current 400 mA Anode supply = 6V resistive load = 10 gate pulse: 10V, 100s, TJ = 25C Switching Parameter T50RIA T70RIA T90RIA Units Conditions TJ = 25oC Vd = 50% VDRM, ITM = 50 A tgd Typical turn-on time 0.9 s trr Typical reverse recovery time 3.0 s TJ =125C, ITM = 50A tp = 300s di/dt =10A/s tq Typical turn-off time 110 s TJ = TJ max., ITM = 50A, tp = 300s, Ig = 500mA, tr <= 0.5, tp >= 6s -di/dt = 15A/s, Vr = 100V; linear to 80%VDRM Document Number: 93756 www.vishay.com 2 T..RIA Series Bulletin I27105 rev. C 10/06 Blocking Parameter T50RIA I RRM Maximum peak reverse and T70RIA T90RIA 15 I DRM off-state leakage current VINS RMS isolation voltage 3500 dv/dt Critical rate of rise of off-state voltage 500 Units Conditions mA TJ = TJ = TJ max. V 50Hz, circuit to base, all terminals shorted, TJ = 25C, t = 1s V/s TJ = TJ max., linear to 80% rated VDRM (1) (1) Available with dv/dt = 1000V/s, to complete code add S90 i.e. T90RIA80S90 Triggering Parameter T50RIA T70RIA T90RIA 10 12 12 W tp 5ms, TJ = TJ max. PG(AV) Max. average gate power 2.5 3.0 3.0 W f=50Hz, TJ = TJ max. IGM Max. peak gate current 2.5 3.0 3.0 A tp 5ms, TJ = TJ max. -VGT Max. peak negative 10 10 10 V V PGM Max. peak gate power Units Conditions gate voltage VGT IGT Max. required DC gate 4.0 4.0 4.0 TJ = - 40C Anode supply = 6V, resistive voltage to trigger 2.5 2.5 2.5 TJ = 25C load; Ra = 1 1.5 1.5 1.5 TJ = TJ max. Max. required DC gate 250 270 270 current to trigger 100 120 120 50 0.2 60 0.2 60 0.2 V 5.0 6.0 6.0 mA VGD Max. gate voltage that will not trigger I GD Max. gate current that will not trigger Max. rate of rise of turned-on current di/dt 200 180 160 mA A/s TJ = - 40C Anode supply = 6V, resistive TJ = 25C load; Ra = 1 TJ = TJ max. @ TJ = TJ max., rated VDRM applied VD = 0.67 rated VDRM, ITM = 2 x rated di/dt Ig = 400mA for T50RIA and Ig = 500mA for T70RIA & T90RIA; tr < 0.5s, tp >= 6s 150 For repetitive value use 40% non-repetitive Per JEDEC std. RS397,5.2.2.6 Thermal and Mechanical Specifications Parameter TJ T50RIA Max. junction operating T70RIA T90RIA Units Conditions -40 to 125 C -40 to 150 C temperature range Tstg Max. storage temperature range R thJC Max. thermal resistance, 0.65 0.50 0.38 K/W DC operation, per junction 0.2 K/W Mounting surface smooth, flat andgreased 1.3 10% Nm junction to case R thCS Max. thermal resistance, case to heatsink T Mounting to heatsink torque 10% wt terminals Approximate weight Case style 3 10% 54 D-56 M3.5 mounting screws (2) non lubricated threads M5 screw terminals g See outline table T type (2) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Document Number: 93756 www.vishay.com 3 T..RIA Series Bulletin I27105 rev. C 10/06 R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Devices Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max. 180o 120o 90o 60o 30o 180o 120o 90o 60o 30o T50RIA 0.08 0.10 0.13 0.19 0.31 0.06 0.10 0.14 0.20 0.32 T70RIA 0.07 0.08 0.10 0.14 0.24 0.05 0.08 0.11 0.15 0.24 T90RIA 0.05 0.06 0.08 0.12 0.20 0.04 0.06 0.09 0.12 0.20 Units K/W Ordering Information Table Circuit configuration ** Device Code T 50 RIA 120 1 2 3 4 G 1 - Module type 2 - Current rating 3 - Circuit configuration ** 4 - Voltage code : code x 10 = VRRM Outline Table + - All dimensions in millimeters (inches) Document Number: 93756 www.vishay.com 4 T..RIA Series 130 T50RIA.. Series R thJC (DC) = 0.65 K/W 120 110 100 Conduction Angle 90 80 30 70 60 90 120 60 180 50 0 10 20 30 40 130 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) Bulletin I27105 rev. C 10/06 50 T50RIA.. Series R thJC (DC) = 0.65 K/W 120 110 100 Conduction Period 90 80 70 60 60 90 120 30 180 DC 50 0 60 10 20 30 40 50 60 70 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 80 K/ W K/W .1 =0 1 SA 60 0. 7 R th 180 120 90 60 30 70 K/W 0.3 K/W 0.5 K/ W 1.5 K/W 50 R RMS Limit a elt -D Maximum Average On-state Power Loss (W) Average On-state Current (A) 80 2K /W 40 3K /W 30 Conduction Angle 20 T50RIA.. Series TJ= 125C 10 5 K/W 10 K/W 0 0 10 20 30 40 50 0 Average On-state Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (C) 110 R 60 ta el -D 70 K/ W 0.7 K/ W 1K /W W K/ .1 =0 80 0. 5 SA 90 R th DC 180 120 90 60 30 100 /W 3K 0. Maximum Average On-state Power Loss (W) Fig. 3 - On-state Power Loss Characteristics 1.5 K/W 2K /W 50 RMS Limit 40 Conduction Period 30 20 T50RIA.. Series TJ = 125C 10 3 K/ W 5 K/W 0 0 10 20 30 40 50 60 Average On-state Current (A) 70 80 0 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (C) Fig. 4 - On-state Power Loss Characteristics Document Number: 93756 www.vishay.com 5 T..RIA Series Bulletin I27105 rev. C 10/06 1300 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 1200 Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1100 1000 900 800 700 600 T50RIA.. Series 500 1 10 100 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ= 125C No Voltage Reapplied Rated V RRMReapplied 1200 1100 1000 900 800 700 600 T50RIA.. Series 500 0.01 0.1 Number Of Equal Amplitude Half Cycle Current Pulses (N) 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 100 TJ= 25C 10 TJ = 125C T50RIA.. Series 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) Fig. 10 - On-state Voltage Drop Characteristics Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30ohms; tr=0.5s, tp>=6s b) Recommended load line for <=30% rated di/dt : 20V, 65ohms 10 tr=1s, tp>=6s (b) (1) PGM = 10W, tp = 5ms (2) PGM = 20W, tp = 2ms (3) PGM = 50W, tp = 1ms (4) PGM = 100W, tp = 500s (a) Tj=-40 C 1 Tj=25 C Tj=125 C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 T50RIA.. Series 0.1 1 Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics Document Number: 93756 www.vishay.com 6 T..RIA Series 130 T70RIA.. Series R thJC (DC) = 0.50 K/W 120 110 100 Conduction Angle 90 80 30 70 60 90 60 120 180 50 0 10 20 30 40 50 60 70 130 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) Bulletin I27105 rev. C 10/06 T70RIA.. Series RthJC (DC) = 0.50 K/W 120 110 100 Conduction Period 90 80 60 70 30 180 DC 80 100 50 0 80 20 40 60 120 Average On-state Current (A) Average On-state Current (A) Fig. 12 - Current Ratings Characteristics Fig. 13 - Current Ratings Characteristics 100 K/ W K/ W aR elt -D 1K /W RMS Limit 60 0. 5 K/W .1 =0 70 0.7 A 80 R thS 180 120 90 60 30 90 /W 3K 0. Maximum Average On-state Power Loss (W) 90 120 60 1.5 K/W 2K /W 50 40 30 3K /W Conduction Angle 5 K/W 20 T70RIA.. Series TJ = 125C 10 7 K/W 0 0 10 20 30 40 50 60 70 0 Average On-state Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (C) 140 DC 180 120 90 60 30 ta el -D R RMS Limit 60 W K/ 80 1 0. K/ W 0.5 K/ W 0.7 K/W 1K /W = 100 0. 3 A thS 120 R Maximum Average On-state Power Loss (W) Fig. 18 - On-state Power Loss Characteristics 1.5 K/W Conduction Period 40 T70RIA.. Series TJ = 125C 20 2K /W 3 K/W 5 K/W 0 0 20 40 60 80 100 Average On-state Current (A) 0 120 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (C) Fig. 15 - On-state Power Loss Characteristics Document Number: 93756 www.vishay.com 7 T..RIA Series Bulletin I27105 rev. C 10/06 1700 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1400 1300 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 1500 1200 1100 1000 900 T70RIA.. Series 800 700 1 10 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated VRRMReapplied 1600 1500 1400 1300 1200 1100 1000 900 800 700 T70RIA.. Series 600 0.01 100 0.1 Number Of Equal Amplitude Half Cycle Current Pulses (N) 1 Pulse Train Duration (s) Fig. 16 - Maximum Non-Repetitive Surge Current Fig. 17 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 100 TJ= 25C 10 TJ= 125C T70RIA.. Series 1 0 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V) Fig. 10 - On-state Voltage Drop Characteristics Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 20ohms; tr=0.5s, tp>=6s b) Recommended load line for <=30% rated di/dt : 15V, 40ohms 10 tr=1s, tp>=6s (b) 1 (1) PGM = 12W, tp = 5ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (4) PGM = 200W, tp = 300s (a) Tj=-40 C Tj=25 C Tj=125 C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD 0.1 0.001 IGD 0.01 T70RIA.., T90RIA.. Series Frequency Limited by PG(AV) 0.1 1 10 100 1000 Instantaneous Gate Current (A) Fig. 19 - Gate Characteristics Document Number: 93756 www.vishay.com 8 T..RIA Series 130 T90RIA.. Series R thJC (DC) = 0.38 K/W 120 110 100 Conduction Angle 90 80 30 70 60 90 60 120 180 50 0 20 40 60 80 130 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) Bulletin I27105 rev. C 10/06 T90RIA.. Series R thJC (DC) = 0.38 K/W 120 110 100 Conduction Period 90 80 70 90 60 60 30 120 180 DC 50 0 100 20 40 60 80 100 120 140 160 Average On-state Current (A) Fig. 23 - Current Ratings Characteristics Fig. 24 - Current Ratings Characteristics 140 a elt -D RMS Limit 1K /W R 80 K/ W /W 1K 0. 0. 5K /W 0.7 K/W = 100 0. 3 SA 180 120 90 60 30 120 R th Maximum Average On-state Power Loss (W) Average On-state Current (A) 1.5 K/W 60 40 Conduction Angle 20 T90RIA Series TJ = 125C 2 K/W 3 K/W 0 0 10 20 30 40 50 60 70 80 Average On-state Current (A) 0 90 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (C) 180 DC 180 120 90 60 30 60 Conduction Period 40 T90RIA.. Series TJ = 125C 20 R 80 RMS Limit ta el -D 100 W K/ 0. 5K /W 0.7 K/W 1K /W 1 0. 120 0. 3K /W = 140 A thS 160 R Maximum Average On-state Power Loss (W) Fig. 29 - On-state Power Loss Characteristics 1.5 K/W 2 K/ W 0 0 20 40 60 80 100 120 140 160 0 Average On-state Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (C) Fig. 29 - On-state Power Loss Characteristics Document Number: 93756 www.vishay.com 9 T..RIA Series Bulletin I27105 rev. C 10/06 1800 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1500 1400 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 1600 1300 1200 1100 1000 900 T90RIA.. Series 800 700 1 10 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated VRRMReapplied 1700 1600 1500 1400 1300 1200 1100 1000 900 800 T90RIA.. Series 700 0.01 100 0.1 Number Of Equal Amplitude Half Cycle Current Pulses (N) 1 Pulse Train Duration (s) Fig. 27 - Maximum Non-Repetitive Surge Current Fig. 28 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 100 TJ = 25C TJ = 125C 10 T90RIA.. Series 1 0 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/W) Fig. 21 - On-state Voltage Drop Characteristics 1 Steady State Value R thJC = 0.65 K/W R thJC = 0.50 K/W T50RIA.. Series R thJC = 0.38 K/W (DC Operation) T70RIA.. Series 0.1 0.01 0.001 T90RIA.. Series 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 34 - Thermal Impedance Z Document Number: 93756 thJC Characteristics www.vishay.com 10 T..RIA Series Bulletin I27105 rev. C 10/06 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 10/06 Document Number: 93756 www.vishay.com 11 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier's Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. International Rectifier(R), IR(R), the IR logo, HEXFET(R), HEXSense(R), HEXDIP(R), DOL(R), INTERO(R), and POWIRTRAIN(R) are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners. Document Number: 99901 Revision: 12-Mar-07 www.vishay.com 1