

NE5517/NE5517A/AU5517
Dual operational transconductance
amplifier
Product data
Replaces NE5517/NE5517A dated 2001 Aug 03 2002 Dec 06
INTEGRATED CIRCUITS
Philips Semiconductor Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2
2002 Dec 06
DESCRIPTION
The AU5517 and NE5517 contain two current-controlled
transconductance amplifiers, each with a differential input and
push-pull output. The AU5517/NE5517 offers significant design and
performance advantages over similar devices for all types of
programmable gain applications. Circuit performance is enhanced
through the use of linearizing diodes at the inputs which enable a
10 dB signal-to-noise improvement referenced to 0.5% THD. The
AU5517/NE5517 is suited for a wide variety of industrial and
consumer applications.
Constant impedance buffers on the chip allow general use of the
AU5517/NE5517. These buffers are made of Darlington transistors
and a biasing network that virtually eliminate the change of offset
voltage due to a burst in the bias current IABC, hence eliminating the
audible noise that could otherwise be heard in high quality audio
applications.
FEATURES
•Constant impedance buffers
•∆VBE of buffer is constant with amplifier IBIAS change
•Excellent matching between amplifiers
•Linearizing diodes
•High output signal-to-noise ratio
APPLICATIONS
•Multiplexers
•Timers
•Electronic music synthesizers
•Dolby HX Systems
•Current-controlled amplifiers, filters
•Current-controlled oscillators, impedances
PIN CONFIGURATION
1
2
3
4
5
6
7
89
10
11
12
13
14
16
15
IABCa
Da
+INa
–INa
VOa
V–
INBUFFERa
VOBUFFERa
IABCb
Db
+INb
–INb
VOb
V+
INBUFFERb
VOBUFFERb
N, D Packages
Top View
SL00306
Figure 1. Pin Configuration
PIN DESIGNATION
PIN NO. SYMBOL NAME AND FUNCTION
1 IABCa Amplifier bias input A
2 DaDiode bias A
3 +INaNon-inverting input A
4 –INaInverting input A
5 VOa Output A
6 V– Negative supply
7 INBUFFERa Buffer input A
8 VOBUFFERa Buffer output A
9 VOBUFFERb Buffer output B
10 INBUFFERb Buffer input B
11 V+ Positive supply
12 VOb Output B
13 –INbInverting input B
14 +INbNon-inverting input B
15 DbDiode bias B
16 IABCb Amplifier bias input B
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
16-Pin Plastic Dual In-Line Package (DIP) 0 to +70 °C NE5517N SOT38-4
16-Pin Plastic Dual In-Line Package (DIP) 0 to +70 °C NE5517AN SOT38-4
16-Pin Small Outline (SO) Package 0 to +70 °C NE5517D SOT109-1
16-Pin Small Outline (SO) Package –40 to +125 °C AU5517D SOT109-1
Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif.
Philips Semiconductor Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06 3
CIRCUIT SCHEMATIC
V+
11
D4
Q6
Q7
2,15
D2
Q4 Q5
D3
–INPUT
4,13 +INPUT
3,14
AMP BIAS
INPUT
1,16 Q2
Q1
D1
V–6
Q10
D6
Q11
VOUTPUT
5,12
Q9
Q8
D5
Q14
Q15 Q16
R1
D7
D8
Q3
7,10 Q12 Q13
8,9
SL00307
Figure 2. Circuit Schematic
CONNECTION DIAGRAM
NOTE:
1. V+ of output buffers and amplifiers are internally connected.
B
AMP
BIAS
INPUT
B
DIODE
BIAS
B
INPUT
(+)
B
INPUT
(–) B
OUTPUT V+ (1)
B
BUFFER
INPUT
B
BUFFER
OUTPUT
AMP
BIAS
INPUT
DIODE
BIAS INPUT
(+) INPUT
(–) OUTPUT V– BUFFER
INPUT BUFFER
OUTPUT
AAA AAAA
123 45 6 7 8
16 15 14 13 12 11 10 9
–
+
B
+
–
A
SL00308
Figure 3. Connection Diagram
Philips Semiconductor Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06 4
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNIT
VSSupply voltage144 VDC or ±22 V
PDPower dissipation,
Tamb = 25 °C (still air)2
NE5517N, NE5517AN 1500 mW
NE5517D, AU5517D 1125 mW
VIN Differential input voltage ±5 V
IDDiode bias current 2 mA
IABC Amplifier bias current 2 mA
ISC Output short-circuit duration Indefinite
IOUT Buffer output current320 mA
Tamb Operating temperature range
NE5517N, NE5517AN 0 °C to +70 °C°C
AU5517D –40 °C to +125 °C°C
VDC DC input voltage +VS to –VS
Tstg Storage temperature range –65 °C to +150 °C°C
Tsld Lead soldering temperature (10 sec max) 230 °C
NOTES:
1. For selections to a supply voltage above ±22 V, contact factory
2. The following derating factors should be applied above 25 °C
N package at 12.0 mW/°C
D package at 9.0 mW/°C
3. Buffer output current should be limited so as to not exceed package dissipation.
Philips Semiconductor Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06 5
DC ELECTRICAL CHARACTERISTICS1
SYMBOL
PARAMETER
TEST CONDITIONS
AU5517/NE5517 NE5517A
UNIT
SYMBOL
PARAMETER
TEST
CONDITIONS
Min Typ Max Min Typ Max
UNIT
0.4 5 0.4 2 mV
VOS Input offset voltage Over temperature range 5 mV
IABC 5 µA 0.3 5 0.3 2 mV
∆VOS/∆TAvg. TC of input offset voltage 7 7 µV/°C
VOS including diodes Diode bias current (ID) = 500 µA 0.5 5 0.5 2 mV
VOS Input offset change 5 µA ≤IABC ≤500 µA 0.1 0.1 3 mV
IOS Input of fset current 0.1 0.6 0.1 0.6 µA
∆IOS/∆TAvg. TC of input offset current 0.001 0.001 µA/°C
IBIAS
In
p
ut bias current
0.4 5 0.4 5 µA
IBIAS
In ut
bias
current
Over temperature range 1 8 1 7 µA
∆IB/∆TAvg. TC of input current 0.01 0.01 µA/°C
gM
Forward transconductance
6700 9600 1300 7700 9600 1200 µmho
gM
Forward
transconductance
Over temperature range 5400 4000 µmho
gM tracking 0.3 0.3 dB
RL = 0, IABC =5 µA 5 3 5 7 µA
IOUT Peak output current RL = 0, IABC = 500 µA 350 500 650 350 500 650 µA
RL = 0 300 300 µA
Peak output voltage
VOUT Positive RL = ∞, 5 µA ≤ IABC ≤ 500 µA +12 +14.2 +12 +14.2 V
Negative RL = ∞, 5 µA ≤ IABC ≤ 500 µA –12 –14.4 –12 –14.4 V
ICC Supply current IABC = 500 µA, both channels 2.6 4 2.6 4 mA
VOS sensitivity
Positive ∆ VOS/∆ V+ 20 150 20 150 µV/V
Negative ∆ VOS/∆ V– 20 150 20 150 µV/V
CMRR Common-mode rejection
ration 80 110 80 110 dB
Common-mode range ±12 ±13.5 ±12 ±13.5 V
Crosstalk Referred to input2
20 Hz < f < 20 kHz 100 100 dB
IIN Differential input current IABC = 0, input = ±4 V 0.02 100 0.02 10 nA
Leakage current IABC = 0 (Refer to test circuit) 0.2 100 0.2 5 nA
RIN Input resistance 10 26 10 26 kΩ
BWOpen-loop bandwidth 2 2 MHz
SR Slew rate Unity gain compensated 50 50 V/µs
INBUFFER Buffer input current 5 0.4 5 0.4 5 µA
VOBUFFER Peak buffer output voltage 5 10 10 V
∆VBE of buffer Refer to Buffer VBE test circuit 30.5 5 0.5 5 mV
NOTES:
1. These specifications apply for VS = ±15 V, Tamb = 25 °C, amplifier bias current (IABC) = 500 µA, Pins 2 and 15 open unless otherwise
specified. The inputs to the buffers are grounded and outputs are open.
2. These specifications apply for VS = ±15 V, IABC = 500 µA, ROUT = 5 kΩ connected from the buf fer output to –VS and the input of the buffer is
connected to the transconductance amplifier output.
3. VS = ±15, ROUT = 5 kΩ connected from Buffer output to –VS and 5 µA ≤ IABC ≤ 500 µA.
Philips Semiconductor Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06 6
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT
VCMR
VOUT
µ
10
10
10
10
1
PEAK OUTPUT CURRENT ( A)
0.1µA1µA10µA 100µA 1000µA
AMPLIFIER BIAS CURRENT (IABC)
VS = ±15V
+125°C
4
3
2
+25°C
-55°C
Peak Output Current
10
10
10
10
10
4
3
2
5
-50°C -25°C0°C25°C50°C75°C100°C125°C
Leakage Current
0V
(+)VIN = (–)VIN = VOUT = 36V
LEAKAGE CURRENT (pA)
AMBIENT TEMPERATURE (TA)
µ
10
10
10
10
10
TRANSCONDUCTANCE (gM) — ( ohm)
4
3
2
0.1µA1µA10µA 100µA 1000µA
AMPLIFIER BIAS CURRENT (IABC)
VS = ±15V
+125°C
+25°C
-55°C
Transconductance
5gM mq
m
M
PINS 2, 15
OPEN
Ω
10
10
1
0.1
0.01
INPUT RESISTANCE (MEG )
1
2
0.1µA1µA10µA 100µA 1000µA
AMPLIFIER BIAS CURRENT (IABC)
Input Resistance
PINS 2, 15
OPEN
10
10
10
10
1
INPUT LEAKAGE CURRENT (pA)
3
2
4
INPUT DIFFERENTIAL VOLTAGE
+125°C
+25°C
Input Leakage
01234567
10
10
10
10
1
INPUT BIAS CURRENT (nA)
3
4
0.1µA1µA10µA 100µA 1000µA
AMPLIFIER BIAS CURRENT (IABC)
Input Bias Current
VS = ±15V
+125°C
+25°C
-55°C
2
10
10
10
1
0.1
INPUT OFFSET CURRENT (nA)
2
3
0.1µA1µA10µA 100µA 1000µA
AMPLIFIER BIAS CURRENT (IABC)
Input Bias Current
VS = ±15V
+125°C
+25°C
-55°C
5
INPUT OFFSET VOLTAGE (mV)
0.1µA1µA10µA 100µA 1000µA
AMPLIFIER BIAS CURRENT (IABC)
Input Offset Voltage
VS = ±15V
+125°C
+25°C
-55°C
+125°C
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
5
PEAK OUTPUT VOLTAGE AND
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8 0.1µA1µA10µA 100µA 1000µA
AMPLIFIER BIAS CURRENT (IABC)
Peak Output Voltage and
Common-Mode Range
VS = ±15V
Tamb = 25°C
VCMR
RLOAD = ∞
COMMON-MODE RANGE (V)
SL00309
Figure 4. Typical Performance Characteristics
Philips Semiconductor Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06 7
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1 VOLT RMS (dB)
20
0
-20
-40
-60
-80
-100
OUTPUT VOLTAGE RELATIVE TO
0.1µA1µA10µA 100µA 1000µA
IABC AMPLIFIER BIAS CURRENT (µA)
VS = ±15V
RL = 10kΩ
OUTPUT NOISE
20kHz BW
VIN = 40mVP-P
VIN = 80mVP-P
VS = ±15V Tamb = +25°C
CIN
COUT
7
6
5
4
3
2
1
00.1µA1µA10µA 100µA 1000µA
CAPACITANCE (pF)
AMPLIFIER BIAS CURRENT (IABC)
0.1µA1µA10µA 100µA 1000µA
2000
1800
1600
1400
1200
1000
800
600
400
200
0
AMPLIFIER BIAS VOLTAGE (mV)
AMPLIFIER BIAS CURRENT (IABC)
-55°C
+25°C
+125°C
OUTPUT DISTORTION (%)
100
10
1
0.1
0.01 1 10 100 1000
DIFFERENTIAL INPUT VOLTAGE (mVP-P)
600
500
400
300
200
100
010 100 1k 10k 100k
OUTPUT NOISE CURRENT (pA/Hz)
FREQUENCY (Hz)
IABC = 1mA
IABC = 100µA
Amplifier Bias Voltage vs
Amplifier Bias Current Input and Output Capacitance Distortion vs Differential
Input Voltage
Voltage vs Amplifier Bias Current Noise vs Frequency
IABC = 1mA
RL = 10kΩ
SL00310
Figure 5. Typical Performance Characteristics (cont.)
Philips Semiconductor Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06 8
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Leakage Current Test Circuit Differential Input Current Test Circuit
Buffer VBE Test Circuit
4, 13
2, 15
3, 14
–
+
NE5517
11
6
1, 15
5, 12 7, 10
8, 9
A
+36V
4, 13
2, 15
3, 14
–
+
NE5517
11
6
1, 10
5, 12
A
+15V
–15V
4V
V
V+
50kΩ
V–
SL00311
Figure 6. Typical Performance Characteristics (cont.)
APPLICATIONS
4, 13
2, 15
3, 14
–
+
NE5517
11
6
5, 12
1, 16
+15V
–15V
7, 10
8, 9
INPUT
OUTPUT
5k
390pF
10k
1.3k
10k
62k
–15V
51Ω
0.01µF
0.001µF
0.01µF
Unity Gain Follower
SL00312
Figure 7. Applications
Philips Semiconductor Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06 9
CIRCUIT DESCRIPTION
The circuit schematic diagram of one-half of the AU5517/NE5517, a
dual operational transconductance amplifier with linearizing diodes
and impedance buffers, is shown in Figure 8.
1. Transconductance Amplifier
The transistor pair, Q4 and Q5, forms a transconductance stage. The
ratio of their collector currents (I4 and I5, respectively) is defined by
the differential input voltage, VIN, which is shown in equation 1.
VIN +KT
qIn I5
I4(1)
Where VIN is the difference of the two input voltages
KT ≅ 26 mV at room temperature (300 °k).
Transistors Q1, Q2 and diode D1 form a current mirror which focuses
the sum of current I4 and I5 to be equal to amplifier bias current IB:
I4 + I5 = IB (2)
If VIN is small, the ratio of I5 and I4 will approach unity and the Taylor
series of In function can be approximated as
KT
qIn I5
I4[KT
qI5*I4
I4(3)
and I4 ≅ I5 ≅ IB
KT
qInI5
I4[KT
qI5*I4
1ń2IB+2KT
qI5*I4
IB+VIN (4)
I5*I4+VIN ǒIBqǓ
2KT
The remaining transistors (Q6 to Q11) and diodes (D4 to D6) form
three current mirrors that produce an output current equal to I5
minus I4. Thus:
VINǒIBq
2KTǓ+IO(5)
The term ǒIBqǓ
2KT is then the transconductance of the amplifier and is
proportional to IB.
2. Linearizing Diodes
For VIN greater than a few millivolts, equation 3 becomes invalid and
the transconductance increases non-linearly. Figure 9 shows how
the internal diodes can linearize the transfer function of the
operational amplifier. Assume D2 and D3 are biased with current
sources and the input signal current is IS. Since
I4 + I5 = IB and I5 – I4 = I0, that is:
I4 = (IB – I0), I5 = (IB + I0)
For the diodes and the input transistors that have identical
geometries and are subject to similar voltages and temperatures,
the following equation is true:
T
qIn
ID
2)IS
ID
2*IS
+KT
qIn 1ń2(IB)IO)
1ń2(IB*IO)(6)
IO+IS2IB
IDfor |IS|tID
2
The only limitation is that the signal current should not exceed ID.
3. Impedance Buffer
The upper limit of transconductance is defined by the maximum
value of IB (2 mA). The lowest value of IB for which the amplifier will
function therefore determines the overall dynamic range. At low
values of IB, a buffer with very low input bias current is desired. A
Darlington amplifier with constant-current source (Q14, Q15, Q16, D7,
D8, and R1) suits the need.
APPLICATIONS
Voltage-Controlled Amplifier
In Figure 10, the voltage divider R2, R3 divides the input-voltage into
small values (mV range) so the amplifier operates in a linear
manner.
It is:
IOUT +*VIN @R3
R2)R3@gM;
VOUT +IOUT @RL;
A+VOUT
VIN +R3
R2)R3@gM @RL
(3) gM = 19.2 IABC
(gM in µmhos for IABC in mA)
Since gM is directly proportional to IABC, the amplification is
controlled by the voltage VC in a simple way.
When VC is taken relative to –VCC the following formula is valid:
IABC +(VC*1.2V)
R1
The 1.2 V is the voltage across two base-emitter baths in the current
mirrors. This circuit is the base for many applications of the
AU5517/NE5517.
Philips Semiconductor Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06 10
V+11 D4
Q6
Q7
2,15
D2
Q4 Q5
D3
–INPUT
4,13 +INPUT
3,14
AMP BIAS
INPUT
1,16 Q2
Q1
D1
V–6
Q10
D6
Q11
VOUTPUT
5,12
Q9
Q8
D5
Q14
Q15 Q16
R1
D7
D8
Q3
7,10 Q12 Q13
8,9
SL00313
Figure 8. Circuit Diagram of NE5517
+VS
ID
IB
I5
Q4
1/2ID
ISIS
1/2ID
–VS
I4I5
D3D2
ID
2IS
ID
2ISI0I5I4
I02I
SIB
ID
SL00314
Figure 9. Linearizing Diode
Stereo Amplifier With Gain Control
Figure 11 shows a stereo amplifier with variable gain via a control
input. Excellent tracking of typical 0.3 dB is easy to achieve. With
the potentiometer , RP, the offset can be adjusted. For AC-coupled
amplifiers, the potentiometer may be replaced with two 510 Ω
resistors.
Modulators
Because the transconductance of an OTA (Operational
T ransconductance Amplifier) is directly proportional to IABC, the
amplification of a signal can be controlled easily. The output current
is the product from transconductance×input voltage. The circuit is
effective up to approximately 200 kHz. Modulation of 99% is easy to
achieve.
Voltage-Controlled Resistor (VCR)
Because an OTA is capable of producing an output current
proportional to the input voltage, a voltage variable resistor can be
made. Figure 13 shows how this is done. A voltage presented at the
RX terminals forces a voltage at the input. This voltage is multiplied
by gM and thereby forces a current through the RX terminals:
RX= RRA
gM RA
where gM is approximately 19.21 µMHOs at room temperature.
Figure 14 shows a Voltage Controlled Resistor using linearizing
diodes. This improves the noise performance of the resistor.
Voltage-Controlled Filters
Figure 15 shows a Voltage Controlled Low-Pass Filter. The circuit is
a unity gain buffer until XC/gM is equal to R/RA. Then, the frequency
response rolls off at a 6dB per octave with the –3 dB point being
defined by the given equations. Operating in the same manner, a
Voltage Controlled High-Pass Filter is shown in Figure 16. Higher
order filters can be made using additional amplifiers as shown in
Figures 17 and 18.
Voltage-Controlled Oscillators
Figure 19 shows a voltage-controlled triangle-square wave
generator. With the indicated values a range from 2 Hz to 200 kHz is
possible by varying IABC from 1 mA to 10 µA.
The output amplitude is determined by IOUT ×ROUT.
Please notice the differential input voltage is not allowed to be above
5 V.
With a slight modification of this circuit you can get the sawtooth
pulse generator, as shown in Figure 20.
Philips Semiconductor Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06 11
APPLICATION HINTS
To hold the transconductance gM within the linear range, IABC
should be chosen not greater than 1 mA. The current mirror ratio
should be as accurate as possible over the entire current range. A
current mirror with only two transistors is not recommended. A
suitable current mirror can be built with a PNP transistor array which
causes excellent matching and thermal coupling among the
transistors. The output current range of the DAC normally reaches
from 0 to –2 mA. In this application, however, the current range is
set through RREF (10 kΩ) to 0 to –1 mA.
IDACMAX 2VREF
RREF 25V
10kW1mA
46
3
–
+
NE5517 5
11 1
7
8
VIN
R4 = R2/ /R3
+VCC
VC
R2
R3
R1
RL
RS
+VCC
INT
VOUT
–VCC
IOUT
IABC
TYPICAL VALUES: R1 = 47k
R2 = 10k
R3 = 200Ω
R4 = 200Ω
RL = 100k
RS = 47k
INT
SL00315
Figure 10.
4
3
–
+
NE5517/A
11
+VCC
8VOUT1
–VCC
13 6
14
–
+
NE5517/A
9
VC
RS
VOUT2
–VCC
VIN1
VIN2
30k
10k
10k
RIN
RIN
RP+VCC RD
15k
1
16
12
10k
RL
5.1k
+VCC
INT
INT
+VCC
10k
RL
10
IABC
IABC
15
15k
RP+VCC RD
1k
RC
1k
SL00316
Figure 11. Gain-Controlled Stereo Amplifier
Philips Semiconductor Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06 12
–VCC
4
6
3
–
+
NE5517/A
8
RS
VOUT
–VCC
VIN1 10k
1
11
+VCC
10k
RL
5
ID
2
15k
RC
VIN2
1k
SIGNAL
30k
IABC
7
CARRIER
INT
INT
+VCC
VOS
SL00317
Figure 12. Amplitude Modulator
–VCC
4
3
–
+
NE5517/A
8VOUT
–VCC
11 +VCC
RX
5
IO
2
R
30k
7
INT
INT
C
200 200
+VCC
100k 10k
VC
RX
RRA
gMRA
SL00318
Figure 13. VCR
–VCC
4
3
NE5517/A
8
–VCC
11 +VCC
RX
5
ID
2
R
30k
7
INT
INT
C
+VCC
100k 10k
VC
+VCC
VOS RP
1k
1
6
SL00319
Figure 14. VCR with Linearizing Diodes
Philips Semiconductor Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06 13
fO
RAgM
g(R RA) 2pC
NOTE:
–VCC
4
3
–
+
NE5517/A
8VOUT
–VCC
11 +VCC
5
IABC
2
R
30k
7
INT
INT
C
200
+VCC
100k 10k
VC
RA
1
150pF
6
200
100k
VIN
SL00320
Figure 15. Voltage-Controlled Low-Pass Filter
fO
RAgM
g(R RA) 2pC
NOTE:
–VCC
4
3
–
+
NE5517/A
8VOUT
–VCC
11 +VCC
5
IABC
2
R
30k
7
INT
INT
C
1k
+VCC
100k 10k
VC
RA
1
6
1k
100k
VOS
NULL
+VCC
-VCC
0.005µF
SL00321
Figure 16. Voltage-Controlled High-Pass Filter
NOTE:
fO
RAgM
(R RA)2pC
+VCC
–
+
NE5517/A
VOUT
–VCC
+VCC
15k
INT
INT
10k
VC
RA
200
200pF
2C
–
+
NE5517/A
+VCC
RA
100k
200
R
100k 10k
C
–VCC
100pF
100k
-VCC
VIN
200 RA
200
SL00322
Figure 17. Butterworth Filter – 2nd Order
Philips Semiconductor Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06 14
+VCC
–
+
NE5517/A
VOUT
–VCC
+VCC
15k
INT
INT
5.1k
VC
800pF
–
+
NE5517/A
+VCC
20k 5.1k
–VCC
800pF
–VCC
10k
6
11
3
2
1k
1
57
20k
1k
13
15
14
12 10
16
LOW
PASS
9
20k
BANDPASS OUT
SL00323
Figure 18. State Variable Filter
+VCC
+
–
NE5517/A
VOUT2
–VCC
+VCC
INT
INT
10k
+
–
NE5517/A
+VCC
20k
–VCC
–VCC
6
11
4
3
57
14
13
12 10
VOUT1
GAIN
CONTROL
1
16
47k
VC30k
C
0.1µF8
INT
+VCC
9
SL00324
Figure 19. Triangle-Square Wave Generator (VCO)
IB
NOTE:
VPK
(VC0.8) R1
R1R2TH
2VPK xC
IBTL
2VPKxC
ICfOSC
IC
2VPKxC ICIB
+VCC
–
+
NE5517/A
VOUT2
–VCC
+VCC
INT
INT
–
+
NE5517/A
+VCC
20k
–VCC
–VCC
6
11
4
3
57
14
13
12 10
VOUT1
1
16 47k
VC470k
C
0.1µF8
INT
+VCC
2
R130k
30k R2
30k
SL00325
IC
Figure 20. Sawtooth Pulse VCO
Philips Semiconductor Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06 15
DIP16: plastic dual in-line package; 16 leads (300 mil) SOT38-4
Philips Semiconductor Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06 16
SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
Philips Semiconductor Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06 17
REVISION HISTORY
Rev Date Description
_3 20021206 Product data (9397 750 10796); type number AU5517 added. ECN 853–0887 29176 of 08 November 2002;
supersedes Product data NE5517_NE5517A version 2 of 03 August 2001.
Modifications:
•Type number AU5517 added.
•“Description” section edited.
_2 20010803 Product data (9397 750 09175); NE5517/NE5517A only; ECN 853–0887 26833 of 2001 Aug 03 .
Philips Semiconductor Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06 18
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given
in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no
representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be
expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree
to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes in the products—including circuits, standard cells, and/or software—described
or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated
via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys
no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent,
copyright, or mask work right infringement, unless otherwise specified.
Contact information
For additional information please visit
http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com.
Koninklijke Philips Electronics N.V. 2002
All rights reserved. Printed in U.S.A.
Date of release: 12-02
Document order number: 9397 750 10796


Data sheet status[1]
Objective data
Preliminary data
Product data
Product
status[2] [3]
Development
Qualification
Production
Definitions
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
Level
I
II
III