SSDI Solid State Devices incorporated 14830 Valley View Avenue La Mirada, California 90638 Telephone (213) 921-9660 TWX -910-583-4807 2N5301 2N5302 200 WATT NPN SILICON POWER TRANSISTOR X00ass. FEATURES MAXIMUM RATINGS e HFE........... e VCE (sat)....... e Fast Switching 1 usec Rise Time e Excellent Safe Operating Area 1560 @ 15 Amps 2.0 V @ 20 Amps PHYSICAL DIMENSIONS In accordance with JEDEC ( TO-3 } outline Rating Symbol 2N5301 2N5302 Unit . TO-3 Collector-Emitter Voltage VceEo 40 60 Vdc boot Collector-Base Voltage Vee 40 60 Vde | TT 4 Emitter-Base Voltage Veg 5 Vdc . seaTing o t -' Collector Current Continuous lc 30 Adc ap a. Base Current ip 75 Adc tO Ht $d, rm OAS dz Total Device Dissipation @ Tp = 26C Pp 200 Watts case cores ~ Derate above 25C 1.14 wit om CMT MART WIN | WA 8 22.23 0.875 Operating and Storage Junction Ty T t! c oi 1143 | 0250 | 0.450 Temperature Range 9 65 to +200 C o_| : ee ee ne Hee aun ouutomr LS 521 eos: te THERMAL CHARACTERISTICS 1 eee oe oo a | 380; 409 [0151 06) Characteristic Symbol Max. Unit i" a aoe Thermal Resistance, Junction to Case O Ic 875 c/w SH UEDEE mont ELECTRICAL CHARACTERISTICS | Characteristic Fig. No. | Symbol | Min | Max | Unit _| OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage N5301 BY CEQ (sus)* 40 Vde (Ie = 200 mAdc,Ig= 0 ) 2N5302 60 _ Cutotf a | N5301 lcEO 5 mAdc ce 40 Vor ig 0 2N5302 5 (Veg = 60 Vde, Ip = 0) Collector Cutoff Current loex mAdc (Vog = 60 Vdc, VeBiotf) = 1.5 Vde) 2N5302 (Veg = 40 Vdc, VEBloff) = 1.5 Vdc, Tp = 150C) 2N5301 10 (Voge = 60 Vdc, VEBloff) = 1.5 Vde, Tp = 150C) 2N5302 10 Collector Cutoff Current All lcBo 1 mAdc (Veg = Rated Veg: le = 0} Types Emitter Cutoff Current All lego 5 mAdc (Vee= 5 Vde, Io = 0 ) TypesELECTRICAL CHARACTERISTICS [ Characteristic | Fig. No. | Symbol | Min | Max [ Unit | ON CHARACTERISTICS DC Current Gain* hee (Ip = 1000 mAdc, Vee = 2 Vdc) 40 All (Ip= 15 Adc, Vog = 2 Vdc) Types 15 60 (Ip = 30 Adc, Voge = 4 Vdc) 5 Collector-Emitter Saturation Voltage* VcE(Sat)* Vde (ig= 10 Adc,Ip= 1 Adc) All 78 Types (Ie = 20 Adc, Ip = 2 Adc) 2 Base-Emitter Saturation Voltage* Ve eE(Sat)* Vde In= 10 Adc,Ip= 1 Ad All 17 ( Cc A Cc, B c) Types (Ip = 20 Adc,Ip= 2 Adc) 2.5 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product All fy MHz (Ip= 1000 mAdc, Vee= 10 Vde,f= 1 MHz) Types 2 SWITCHING CHARACTERISTICS Delay Time (Vege 30 Vdc, Alt Rise Time Ip= 10 Adc, 1g, = 1000 mAdc) Types t, 1000 ns Storage Time (Voc = 30 Vdc, le = 10 Adc, All t, 2 US Fall Time Ip1='g2= 1000 mAdc) Types ty 1000 ns *Pulse Test: Pulse Width 300 ps, Duty Cycle = 2% TYPICAL OPERATING CURVES Ta Tec 8.0 200 6.0 150 4.0 100 Te NA N\ NI NY Ta nN 2.0 50 NN NN Py, POWER DISSIPATION (WATTS) SS 100 120 140 160 180 200 a 0 0 2 40 60 80 TEMPERATURE (C) Form 510 SSDI ic, COLLECTOR CURRENT (AMP) 1.0 2N5303 Ty = 200C Secondary Breakdown Limited - Bonding Wire Limited ~ Thermal Limitations Pluse Duty Cycle 10% Te = 25C 2N5301 2N5302 20 3.0 5.0 10 20 (30 50 Vee, COLLECTOR EMITTER VOLTAGE (VOLTS) 100