X7R Dielectric General Specifications Ir PART NUMBER isee p 0805 5 c | | | i Size Voltage Dielectric Capacitan (L x W"} 10V=2 X7R=C Code 16V=Y 25V=3 50V=5 JOOV = AFORMANCE CHARACTER X7R formulations are called temperature-stabie ceramics and fall into EIA Class it materials. X7R is the most popular of these intermediate dielectric-constant materials. Its temperature variation of capacitance is with- in +15% from -55C to +125C. This capacitance change is non-linear. Capacitance for X7R varies under the influence of elec- trical operating conditions such as voltage and frequency. it also varies with time, approximately 1% A C per decade of time, representing about 5% change in ten years. X?R dielectric chip usage covers the broad spectrum of industrial applications where known changes in capaci- tance due to applied voltages are acceptable. A T 2 A Tv T T Tv | nce Capacitance Failure Terminations Packaging Special Tolerance Rate T = Plated Ni 2=7* Reel Code Preferred A= Not and Solder Paper/Unmarked A=Std. M = + 20% Appiicable Product K= +10% ey iC? Byes idee Capacitance Range 100 pF to 2.2 uF (1.0 +0.2 Vrms, 1kKHz) Capacitance Tolerances Preferred +10%, +20% others available: +5%, +80 -20% Operating Temperature Range -55C to +125C Temperature Characteristic +15% (0 VDC) Voltage Ratings 10, 16, 25, 50, 100 VDC (+125C} Dissipation Factor For 50 volts and 100 volts: 2.5% max. For 25 volts: 3.0% max. For 16 volts: 3.5% max. For 10 volts: 5% max. Insulation Resistance (+25C, RVDC) 100,000 megohms min. or 1000 MQ - uF min., whichever is less Insulation Resistance (+125C, RVDC) 10,000 megohms min. or 100 MQ - UF min., whichever is less Aging Rate =1% per decade hour Dielectric Strength 250% of rated voltage for 5 seconds at 50 mamp max. current Test Voltage 1.0+0.2 Vims Test Frequency 1 KHz v a 12 IN) X7R Dielectric Typical Characteristic Curves** In +12 % A Capacitance % A Capacitance Insulation Resistance (Ohm-Farads) KHz Insulation Resistance vs Temperature Temperature Coefficient fs ee ee Pearce eee: 75 -50 -25 0 +25 +50 +75 +100 +125 Temperature C A Capacitance vs. Frequency 100 KHz 1 MHz 410 MHz Frequency 10 KHz. +80 +100 Variation of Impedance with Cap Value Impedance vs. Frequency 1,000 pF vs. 10,000 pF - X7R 0805 _ peers Frequency, MHz 4000 Variation of lmpedance with Chip Size 10 impedance, 22 Impedance vs. Frequency 10,000 pF - X7R 10 a ss Eee Frequency, MHz a araeee 1,000 Variation of Impedance with Chip Size 1.0 impedance, 1 0.1 Impedance vs. Frequency 100 000 pF - X7R +25 +40 +60 ot See awe be Temperature C "Frequency, es 1.000 SUMMARY OF CAPACITANCE RANGES VS. CHIP SIZE Style 10V 16V 25V 50V 100V 0402* _ 1O0pF - 47nF 1O0pF - 6.8nF 1O0pF - 3.9nF _ 0504 _ TOOpF - .O1pF 1O0pF - 3.3nF 0603* 100pF - 0.22uF 1OOpF - 0.1pF 1OOpF - 47nF 1OOpF - 15nF 1O0pF - 4.7nF 0805* TOOpF - iuF 1O0pF - 0.47 uF 100pF - 0.22uUF 1OOpF - 0.1 pF 1OOpF - 22nF 1206* 1.5uF - 2.2uF InF - tuF tnF - 0.47pF InF - 0.22uF tnF - 0.1pF 1210* > TnF - 1.8yF InF - 1pF InF - 0.22uF InF - 0.1 uF 1505 > > > InF - 0.1 pF 1nF - 27nF 1808 > + 10nF - 0.33uF 1OnF - 0.33uF 1OnF - 0.1pF 1812* > > > 1OnF - iF 10nF - 0.47pF 1825* > > > TOnF - tyr 1OnF - 0.47uF 2220 > > > 1OnF - 1.5uF 1OnF - 1.2uF 2225 + > > 1OnF - 2.2uF 1OnF - 1.5pF * Standard Sizes Far additional information on performance changes with operating conditions consult AVXs software SpiCap. INADA 13X7R Dielectric Capacitance Range co 1505 1.27 25 2.01 + .20 3.81 + 25 (050 + .010) (079 + .008) - (150 = O10) 1.02 + 25 1.25.4 127 = 25 (040 + .010) (049 + .008) (.050 + O10) 4.02 90 30 1.50 1.27 (040) (035) {061} {089} (050) 38 +13 35 4.18 50+ 26 50 + 25 {.015 + .008) (014 + 006) {020 + .010) (020 + .O1C} 400 16 | 25 | 50] 100) 10 | 16 | 25 | 50 J 100] 10 | 16 | 25 | 50 } 100 50 100 > *IR and vapor phase soldering only recommended. NOTES: For higher voltage chips, see pages 24 and 25. 4 INASX7R Dielectric Capacitance Range SIZE 1210 1808" 1812* 1825 2220 2225* MM 3.20 + 20 4572 25 450 +. 4D2D {L) Length fin) (126 008) (180 + 010) {A721 4177 #012} 6.7204 (225 = 016) $722.25 {225 O19) MM 2.50 20 2.08 + 25 , 3.20 2.20 6.40 40 (4) Width (in) 1008 008} 080 + 010) (1262 008) (252 & 016) 5.04204 (197 + O16) 6.35 + 25 (250 + 010) MM 1.70 1.52 1.70 1.70 (1) Max. Thickness fin} (067) (,060} (087) 067} 2.30 {,090} 1.70 (067) MM 50 + 25 64 + 39 61+ 36 61s 36 Terminal (in (020 x .010) (025 = 015} (024 2 O14 (024 + 014) 64 + 39 (025 + .015) 64 + 39 (025 + 015} 50 100 50 190 50 100 100 100 Cap 1000 {pF 4200 1500 LL | 1800 2200 2700 200 iL IE oe 3300 3900 4700 5600 6800 8200 Cap. 010 (uF) O12 10 A2 AE 18 22 27 3 39 AT 56 68 82 1.0 1.2 15 18 22 *IR and vapor phase soldering only recommended. NOTES: For higher voltage chips, see pages 24 and 25. INA 15