©2007 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
Rev. A
NPN General Purpose Amplifier
June 2007
BSR17A
NPN General Purpose Amplifier
SOT-23
MARK: U92
Features
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings *Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or lo w duty cycle operatio ns.
Thermal Characteristics *Ta = 25°C unless otherwise noted
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current (DC) 200 mA
TJJunction Temperature -55 ~ +150 °C
TSTG Storage Temperature -55 ~ +150 °C
Symbol Characteristic Max Units
PDTotal Device Dissipation
Derate above 25℃
350
2.8
mW
mW/℃
RθJA Thermal Resistance, Junction to Ambient 357 ℃/W
C
B E
2www.fairchildsemi.com
BSR17A Rev. A
BSR17A NPN General Purpose Amplifier
Electrical Characteristics *Ta = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Small Signal Characteristics
Switching Characteristics
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0 %
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
Symbol Parameter Test Condition MIN MAX Units
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IB = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IC = 10 µA, IB = 0 6.0 V
ICBO Collector-Cutoff Current VCB = 30 V, TA = 150°C5.0 µA
ICEX Emitter-Cutoff Current VCE = 30 V, VEB = 3.0 V 50 nA
IBEX IBEX Reverse Base Current VCE = 30 V, VEB = 3.0 V 50 nA
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
40
70
100
60
30
300
VCE(sat)Collector-Emitter Saturation Voltage *IC = 10 mA, IB = 1. 0 mA
IC = 50 mA, IB = 5. 0 mA 0.2
0.3 V
V
VBE(sat)Emitter-Base Breakdown Voltage * IC = 10 mA, IB = 1. 0 mA
IC = 50 mA, IB = 5. 0 mA 0.65 0.85
0.95 V
V
fTTransition Frequency IC = 20 mA, VCE = 20 V, f = 100 MHz 300 MHz
Ccb Collector-Base Capacitance VCB = 0.5 V, IE = 0, f = 1.0 MHz 4.0 pF
Ceb Emitter-Base Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 8.0 pF
hie Input Impedance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 1.0 10 kΩ
hfe Small-Signal Current Gain VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 100 400
hoe Output Admittance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 1.0 40 µS
td Delay Time IC = 10 mA, I B1 = 1.0 mA,VEB= 0.5 V 35 ns
trRise Time 4.0 pF
tsStorage Time IC = 10 mA, IBon = IBoff = 1.0 mA 200 ns
tfFall Time 50 ns
3www.fairchildsemi.com
BSR17A Rev. A
BSR17A NPN General Purpose Amplifier
Typical Performance Characteristics
4www.fairchildsemi.com
BSR17A Rev. A
BSR17A NPN General Purpose Amplifier
Typical Performance Characteristics (continued)
5www.fairchildsemi.com
BSR17A Rev. A
BSR17A NPN General Purpose Amplifier
Typical Performance Characteristics (continued)
Test Circuits
tm
FAIRCHILD SEMICONDUCTOR TRADEMARKS
The following are regis tered and unr egister ed tradema rks Fairchild Semiconduc tor owns or is authorized to use an d is not int ended to
be an exhaustive list of all such trademarks.
BSR17A NPN General Purpose Amplifier
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-
CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions fo r use provided in the labeling, can be reaso nably expecte d
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be re asonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains prelim inary data, and
supplementary data will be published at a lat er date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identifica tion Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time withou t notice in order to im prove design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fair child semiconductor.
The datasheet is printed for reference information only.
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC®
UniFET™
VCX™
Wire™
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT®
FAST®
FASTr™
FPS™
FRFET™
Across the board. Around th e world.™
The Power Franchise®
Programmable Activ e Droop™
Rev. I23
6www.fairchildsemi.com
BSR17A Rev. A
BSR17A NPN General Purpose Amplifier
