2N2646 2N2647 SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where a low emitter leakage current and a low peak point emitter current (trigger current) are required and also for triggering high power SCR's. CASE MAXIMUM RATINGS (*) TJ=125C unless otherwise noted Symbol Ratings 2N2646 2N2647 VB1E Base 1 - Emitter Voltage 30 V VB2E Base 2 - Emitter Voltage 30 V IFRMS RMS Emitter Current 50 mA IEM Emitter Peak Current 2 A PTOT Total Power Dissipation 300 mW TJ Maximum Junction 150 TSTG Storage Temperature Range C -55 to +175 ELECTRICAL CHARACTERISTICS TJ=25C unless otherwise noted, RGK=1000 Symbol Ratings IEO Emitter Reverse Current V(BR)B1E Base 1 - Emitter Breakdown Voltage IE =100 A 2N2646 - 2N2647 Min Max A 12 30 COMSET SEMICONDUCTORS V 1/2 2N2646 2N2647 Symbol 2N2646 - 2N2647 Ratings RBBO Interbase Resistance VB1B2 = 3 V Intrinsic stand-off ratio VB1B2 = 10 V VE(SAT) Emitter Saturation Voltage IE = 50 mA, VB1B2 = 10 V IV Valley Current VB1B2 = 20 V IP Peak Current VB1B2 = 25 V Min Max 4.7 9.1 2N2646 0.56 0.75 2N2647 0.68 0.82 - 2.5 4 8 - 5 2 k - 2N2646 2N2647 2N2646 2N2647 V mA A * VDRM or VRSM can be applied for all types on a continuous dc basis without incurring damage. Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 2/2