BC557B,112 - NXP Semiconductors - Datasheet.Technology

DATA SH EET

Product data sheet

Supersedes data of 1999 Apr 15 2004 Oct 11

DISCRETE SEMICONDUCTORS

BC556; BC557

PNP general purpose transistors

ook, halfpage

M3D186

2004 Oct 11 2

NXP Semiconductors Product data sheet

PNP general purpose transistors BC556; BC557

FEATURES

•Low current (ma x. 10 0 mA)

•Low voltage (max. 65 V).

APPLICATIONS

•General purpose switc hing and amplification.

DESCRIPTION

PNP transistor in a TO-92; SOT54 plastic package.

NPN complements: BC546 and BC547.

PINNING

PIN DESCRIPTION

1emitter

2base

3collector

Fig.1 Simplified outline (TO-92; SOT54)

and symbol.

handbook, halfpage

MAM281

ORDERING INFORMATION

LIMITING VALUES

In accordance with the A bsolute Maxi mum Rating System (IEC 60134).

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

BC556 SC-43A plastic sing le-ended leaded (through hole) package; 3 lea ds SOT54

BC557

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter

BC556 − −80 V

BC557 − −50 V

VCEO collector-emitter voltage open base

BC556 − −65 V

BC557 − −45 V

VEBO emitter-base vo ltage open collector − −5 V

ICcollector current (DC) − −100 mA

ICM peak collector current − −200 mA

IBM peak base current − −200 mA

Ptot total power dissipation Tamb ≤ 25 °C−500 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

2004 Oct 11 3

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC556; BC557

THERMAL CHARACTE RISTICS

Note

1. Transistor mounted on an FR4 printed- circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Notes

1. VBEsat decreases by about −1.7 mV/K with increasing temperature.

2. VBE decreases by about −2 mV/K with increasing temperature.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 250 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB = −30 V; IE = 0 A − −1−15 nA

VCB = −30 V; IE = 0 A; Tj = 150 °C−−−4μA

IEBO emitter-base cu t-off current VEB = −5 V; IC = 0 V −−−100 nA

hFE DC current gain IC = −2 mA; VCE = −5 V;

see Figs 2, 3 and 4

BC556 125 −475

BC557 125 −800

BC556A 125 −250

BC556B; BC557B 220 −475

BC557C 420 −800

VCEsat collector-emitter saturation

voltage IC = −10 mA; IB = −0.5 mA − −60 −300 mV

IC = −100 mA; IB = −5 mA − −180 −650 mV

VBEsat base-emitt er saturatio n voltage IC = −10 mA; IB = −0.5 mA; note 1 − −750 −mV

IC = −100 mA; IB = −5 mA; note 1 − −930 −mV

VBE base-emitter vo ltage VCE = −5 V; IC = −2 mA; note 2 −600 −650 −750 mV

VCE = −5 V; IC = −10 mA; note 2 −−−820 mV

Cccollector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz −3−pF

Ceemitter cap a citance VEB = −0.5 V; IC = ic = 0 A; f = 1 MHz −10 −pF

fTtransition freque ncy VCE = −5 V; IC = −10 mA; f = 100 MHz 100 −−MHz

Fnoise figure VCE = −5 V; IC = −200 μA; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz −210 dB

2004 Oct 11 4

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC556; BC557

Fig.2 DC current gain; typical values.

handbook, full pagewidth

300

100

200

MBH726

−10−1

hFE

−1IC (mA)

−10 −103

−102

VCE = −5 V

BC556A.

Fig.3 DC current gain; typical values.

handbook, full pagewidth

300

200

100

400

MBH727

−10

−2

−10

−1

hFE

−1IC (mA)

−10 −10

−10

VCE = −5 V

BC556B; BC557B.

2004 Oct 11 5

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC556; BC557

Fig.4 DC current gain; typical values.

handbook, full pagewidth

300

200

100

600

500

400

MBH728

−10−2−10−1

hFE

−1IC (mA)

−10 −103

−102

VCE = −5 V

BC557C.

2004 Oct 11 6

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC556; BC557

PACKAGE OUTLINE

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 5.2

5.0

0.48

0.40

0.45

0.38

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

L1(1)

max.

2.5

0.66

0.55

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43A 04-06-28

04-11-16

A L

0 2.5 5 mm

scale

b1L1

Plastic single-ended leaded (through hole) package; 3 leads SOT5

e1e

2004 Oct 11 7

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC556; BC557

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production This document contains the pr oduct specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to informa t ion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reason ably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict betwee n information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property ri gh ts.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

Contact information

For additional information p lease visit: http://www.nxp.com

For sales offices addresses send e- mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information pr e sent ed in this document d oes not form part o f an y quotation or cont ra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other ind us trial or intellectual property rights.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/04/pp8 Date of release: 2004 Oct 11 Document orde r number: 9397 750 13571