MIO 2400-17E10 IC80 = 2400 A = 1700 V VCES VCE(sat) typ. = 2.3 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' t G E' Features IGBT VCES VGE = 0 V Maximum Ratings u Conditions 1700 V 20 V 2400 A 4800 A 10 s -o Symbol TC = 80C ICM tp = 1 ms; TC = 80C tSC VCC = 1000 V; VCEM CHIP = <1700 V; VGE < 15 V; TVJ < 125C Typical Applications s IC80 e VGES Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. VCE(sat) IC = 2400 A; VGE = 15 V; TVJ = 25C TVJ = 125C VGE(th) IC = 240 mA; VCE = VGE ICES VCE = 1700 V; VGE = 0 V; TVJ = 125C 120 mA IGES VCE = 0 V; VGE = 20 V; TVJ = 125C 500 nA td(on) tr td(off) tf Eon Eoff Inductive load; TVJ = 125C; VGE = 15 V; VCC = 900 V; IC = 2400 A; RG = 0.56 ; L = 60 nH Cies Coes Cres VCE = 25 V; VGE = 0 V; f = 1 MHz Qge IC = 2400 A; VCE = 900 V; VGE = 15 V 2.3 2.6 4.5 p h a Symbol RthJC * NPT IGBT - Low-loss - Smooth switching waveforms for good EMC * Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance 2.6 2.9 V V 6.5 V 340 260 1050 270 600 980 ns ns ns ns mJ mJ 230 22 10 nF nF nF 22 C * AC power converters for - industrial drives - windmills - traction * LASER pulse generator 0.007 K/W Collector emitter saturation voltage is given at chip level IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110119a 1-6 MIO 2400-17E10 Diode Symbol Conditions Maximum Ratings IF80 TC = 80C IFSM VR = 0 V; TVJ = 125C; tp = 10 ms; half-sinewave Symbol Conditions VF IF = 2400 A; IRM trr QRR Erec VCC = 900 V; IC = 2400 A; VGE = 15 V; RG = 0.56; TVJ = 125C Inductive load; L = 60 nH 2400 A 22000 A Characteristic Values min. typ. max. TVJ = 25C TVJ = 125C 1.65 1.70 2.0 V V 1880 890 1025 720 RthJC A ns C mJ 0.012 K/W u t Forward voltage is given at chip level -o Module Symbol Conditions Maximum Ratings TJM TVJ Tstg max junction temperature Operating temperature Storage temperature VISOL 50 Hz Md Mounting torque Symbol Conditions dA Clearance distance terminal to base terminal to terminal 23 19 mm mm dS Surface creepage distance terminal to base terminal to terminal 33 33 mm mm L Module stray inductance, C to E terminal Rterm-chip *) RthCH C C C 4000 V~ 4-6 8 - 10 Nm Nm e +150 -40...+125 -40...+125 p h a s Base-heatsink, M6 screws Main terminals, M8 screws Characteristic Values min. typ. max. 10 nH Resistance terminal to chip 0.085 m per module; grease = 1 W/m*K 0.006 K/W 1500 g Weight ) * V = VCE(sat) + Rterm-chip * IC resp. V = VF + Rterm-chip * IF 20110119a (c) 2011 IXYS All rights reserved 2-6 MIO 2400-17E10 4800 4800 4400 17V 4400 4000 15V 4000 3600 13V 3600 3200 11V 3200 9V 2800 15V 13V IC [A] IC [A] 2800 17V 2400 9V 2400 2000 2000 1600 1600 1200 1200 800 800 400 11V 400 Tvj = 25 C Tvj = 125 C 0 0 0 1 2 3 4 5 0 6 1 2 3 5 6 Fig. 2 Typical output characteristics, chip level t Fig. 1 Typical output characteristics, chip level 4800 4800 4400 4400 VCE = 25 V u 25 C 4000 4000 125 C 3600 3600 3200 -o 3200 2800 2800 IC [A] IC [A] 4 VCE [V] VCE [V] 2400 2000 2400 e 2000 1600 1200 400 1 2 3 4 0 5 h VCE [V] 400 a 0 Fig. 3 Typical onstate characteristics, chip level 25 C 800 VGE = 15 V 0 125 C 1200 s 800 1600 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V] Fig. 4 Typical transfer characteristics, chip level 1000 p 20 VCC = 900 V Cies 15 100 Coes C [nF] VGE [V] VCC = 1300 10 Cres 10 5 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV IC = 2400 A Tvj = 25 C 0 1 0 2 4 6 8 10 12 Qg [C] 14 16 18 Fig. 5 Typical gate charge characteristics (c) 2011 IXYS All rights reserved 20 0 5 10 15 20 VCE [V] Fig. 6 Typical capacitances vs collector-emitter voltage 25 30 35 20110119a 3-6 MIO 2400-17E10 3.0 3.0 V CC = 900 V R G = 0.56 ohm V GE = 15 V T vj = 125 C L = 60 nH 2.5 2.5 Eon 2.0 Eon, Eoff [J] 2.0 E on , E off [J] VCC = 900 V IC = 2400 A VGE = 15 V Tvj = 125 C L = 60 nH 1.5 1.0 1.5 Eoff 1.0 E off E on 0.5 0.5 0.0 0.0 0 1000 2000 3000 4000 0 5000 1 2 Fig. 8 Typical switching energies per pulse vs gate resistor 10 10 VCC = 900 V RG = 0.56 ohm VGE = 15 V Tvj = 125 C L = 60 nH td(on), tr, td(off), tf [s] u VCC = 900 V IC = 2400 A VGE = 15 V Tvj = 125 C L = 60 nH td(off) -o td(on), tr, td(off), tf [s] 4 t Fig. 7 Typical switching energies per pulse vs collector current td(off) e 1 td(on) 1 tr td(on) tf s tf 1000 2000 3000 IC [A] 4000 5000 h Fig. 9 Typical switching times vs collector current 2.5 0.1 a tr 0.1 0 3 RG [ohm] IC [A] 0 1 2 3 4 5 RG [ohm] Fig. 10 Typical switching times vs gate resistor 4800 p VCC 1300 V 4400 4000 25C 2 3600 125C 3200 2800 IF [A] ICpulse / IC 1.5 2400 2000 1 1600 1200 800 0.5 400 IC, Chip IC, Module 0 0 0 0 500 1000 VCE [V] 1500 2000 Fig. 11 Turn-off safe operating area (RBSOA) (c) 2011 IXYS All rights reserved 0.5 1 1.5 2 2.5 VF [V] Fig. 12 Typical diode forward characteristics, chip level 20110119a 4-6 MIO 2400-17E10 2500 VCC = 900 V R G = 0.56 ohm Tvj = 125 C L = 60 nH 900 800 1000 900 IRM 2000 800 700 400 1000 E rec 500 100 0 0 1000 2000 3000 4000 1400 1200 500 1000 IRM QRR 400 300 200 1600 600 Erec [mJ] 500 IRM [A], Q RR [C] 1500 1800 Erec 700 Q RR 600 E rec [mJ] 2000 VCC = 900 V IF = 2400 A Tvj = 125 C L = 60 nH 800 300 600 200 400 100 200 0 0 5000 IRM [A], QRR [C] 1000 0 0 1 IF [A] 2 3 4 5 RG [ohm] Fig. 14 Typical reverse recovery characteristics vs gate resistor e -o u t Fig. 13 Typical reverse recovery characteristics vs forward current n a Z th (j-c) (t) = R i (1 - e - t/ i ) i =1 h 0.01 Zth(j-c) Diode 0.0001 0.001 0.01 0.1 t [s] 1 1 2 3 4 IGBT 0.001 i Ri(K/kW) 4.91 1.35 0.444 0.331 i(ms) 189 22 2.4 0.54 DIODE Zth(j-c) IGBT p Zth(j-h) [K/W] IGBT, DIODE s 0.1 Ri(K/kW) 8.17 2.16 0.862 0.885 i(ms) 196 31 7.4 1.4 10 Fig. 15 Thermal impedance vs time 20110119a (c) 2011 IXYS All rights reserved 5-6 MIO 2400-17E10 a s e -o u t Outline drawing ' p h ' Note: all dimensions are shown in mm 20110119a (c) 2011 IXYS All rights reserved 6-6