Features
l Ideally Suited for Automatic Insertion
l 150oC Junction Temperature
l For Switching and AF Amplifier Applications
Mechanical Data
l Case: SOT-23, Molded Plastic
l Terminals: Solderable per MIL-STD-202, Method 208
l Polarity: See Diagram
l Weight: 0.008 grams ( approx.)
Type Marking Type Marking
BC846A 1A BC847C 1G
BC846B 1B BC848A 1J
BC847A 1E BC848B 1K
BC847B 1F BC848C 1L
Marking Code (Note 2)
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic Symbol Value Unit
Collector-Base Voltage BC846
BC847
BC848
VCBO
80
50
30
V
Collector-Emitter Voltage BC846
BC847
BC848
VCEO
65
45
30
V
Emitter-Base Voltage BC846,BC847
BC848
VEBO 6.0
5.0
V
Collector Current IC100 mA
Peak Collector Current ICM 200 mA
Peak Emitter Current IEM 200 mA
Power Dissipation@Ts=50oC(Note1) Pd310 mW
Operating & Storage Temperature Tj, TSTG -55~150 oC
Note: 1. Package mounted on ceramic substrate
0.7mm X 2.5cm2 area.
2. Current gain subgroup “C” is not available
for BC846.
BC846A
THRU
BC848C
NPN Small
Signal Transistor
310mW
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.110 .120 2.80 3.04
B.083 .098 2.10 2.64
C.047 .055 1.20 1.40
D.035 .041 .89 1.03
E.070 .081 1.78 2.05
F.018 .024 .45 .60
G.0005 .0039 .013 .100
H.035 .044 .89 1.12
J.003 .007 .085 .180
K.015 .020 .37 .51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
SOT-23
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omponents
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MCC
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Electrical Characteristics@ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 3) BC846
BC847
BC848
V(BR)CBO
80
50
30
—
—
—
—
—
—
VIC= 10mA, IB= 0
Collector-Emitter Breakdown Voltage (Note 3) BC846
BC847
BC848
V(BR)CEO
65
45
30
—
—
—
—
—
—
VIC= 10mA, IB= 0
Emitter-Base Breakdown Voltage (Note 3) BC846
BC847
BC848
V(BR)EBO 6
5—— V
IE= 1mA, IC= 0
H-Parameters
Small Signal Current Gain Current Gain Group A
B
C
Input Impedance Current Gain Group A
B
C
Output Admittance Current Gain Group A
B
C
Reverse Voltage Transfer Ratio A
Current Gain Group B
C
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
—
—
—
—
—
—
—
—
—
—
—
—
220
330
600
2.7
4.5
8.7
18
30
60
1.5x10-4
2x10-4
3x10-4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
kW
kW
kW
µS
µS
µS
—
—
—
VCE = 5.0V, IC= 2.0mA,
f = 1.0kHz
DC Current Gain Current Gain Group A
B
(Note 3) C
—
110
200
420
180
290
520
220
450
800
—VCE = 5.0V, IC= 2.0mA
Thermal Resistance, Junction to Substrate Backside RqS—— 320 °C/W Note 1
Thermal Resistance, Junction to Ambient Air RqJA —— 400 °C/W Note 1
Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) —90
200
250
600 mV IC= 10mA, IB= 0.5mA
IC= 100mA, IB= 5.0mA
Base-Emitter Saturation Voltage (Note 3) VBE(SAT) —700
900 —mV
IC= 10mA, IB= 0.5mA
IC= 100mA, IB= 5.0mA
Base-Emitter Voltage (Note 3) VBE(ON) 580
—
660
—
700
770 mV VCE = 5.0V, IC= 2.0mA
VCE = 5.0V, IC= 10mA
Collector-Cutoff Current (Note 3) BC846
BC847
BC848
ICES
ICES
ICES
ICBO
ICBO
—
—
—
—
—
—
—
—
—
—
15
15
15
15
5.0
nA
nA
nA
nA
µA
VCE = 80V
VCE = 50V
VCE = 30V
VCB = 40V
VCB = 30V, TA= 150°C
Gain Bandwidth Product fT100 300 — MHz VCE = 5.0V, IC= 10mA,
f = 100MHz
Collector-Base Capacitance CCBO — 3.0 — pF VCB = 10V, f = 1.0MHz
Noise Figure NF — 2 10 dB
VCE = 5V, IC= 200µA,
RS= 2.0kW,
f = 1.0kHz, Df = 200Hz
Notes:1. Package mounted on ceramic substrate 0.7mm x 2.5cm2area.
2. Current gain subgroup “C” is not available for BC846.
3. Short duration pulse test to minimize self-heating effect.
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BC846A thru BC848C
