Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 7
1Publication Order Number:
MMBD914LT1/D
MMBD914LT1G,
SMMBD914LT1G,
MMBD914LT3G,
SMMBD914LT3G
High-Speed Switching
Diode
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage VR100 Vdc
Forward Current IF200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25C
Derate above 25C
PD225
1.8
mW
mW/C
Thermal Resistance, Junction−to−Ambient
RJA 556 C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25C
Derate above 25C
PD300
2.4
mW
mW/C
Thermal Resistance, Junction−to−Ambient
RJA 417 C/W
Junction and Storage Temperature
Range
TJ, Tstg −55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping†
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 8
MARKING DIAGRAM
1
ANODE
3
CATHODE
MMBD914LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
MMBD914LT3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
1
5D M G
G
5D = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
SMMBD914LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SMMBD914LT3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
MMBD914LT1G, SMMBD914LT1G, MMBD914LT3G, SMMBD914LT3G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 100 Adc)
V(BR) 100 −Vdc
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
IR
−
−
25
5.0
nAdc
Adc
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT−4.0 pF
Forward Voltage
(IF = 10 mAdc)
VF−1.0 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
trr −4.0 ns
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820
0.1 F
DUT
VR
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
MMBD914LT1G, SMMBD914LT1G, MMBD914LT3G, SMMBD914LT3G
http://onsemi.com
3
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
1.0
10
100
0.1
Figure 3. Leakage Current
VR, REVERSE VOLTAGE (VOLTS)
10
0
I
1.0
0.1
0.001
0.01
10 20 30 40 50
I
1.0 1.20.2 0.4 0.6 0.8
Figure 4. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
0
C
0.68
0.64
0.60
0.52
0.56
2.0 4.0 6.0 8.0
, FORWARD CURRENT (mA)
F
TA = 85CTA = -40C
TA = 25C
, REVERSE CURRENT ( A)
R
, DIODE CAPACITANCE (pF)
D
TA = 25C
TA = 55C
TA = 85C
TA = 150C
TA = 125C
MMBD914LT1G, SMMBD914LT1G, MMBD914LT3G, SMMBD914LT3G
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Phone: 81−3−5817−1050
MMBD914LT1/D
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