BCX52
BCX52-10
BCX52-16
PNP
Plastic-Encapsulate
Transistors
Features
x Power Dissipation: PCM=0.5W (Tamb=25к)
x Collector Current: ICM=-1.0A
x Collector-Base Voltage: V(BR)CBO=-60V
x Marking Code: BCX52=AE, BCX52-10=AG, BCX52-16=AM
Maximum Ratings
Symbol Rating Value Unit
ICCollector Current DC -1.0 A
PCCollector Power Dissipation 0.5 W
TJJunction Temperature
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25qC Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
OFF CHARACTERISTICS
(IC=-100uA, IE=0)
(IC=-1mA, IB=0)
(IE=-100uA, IC=0)
ICBO Collector Cutoff Current
(VCB=-30V, IE=0)
IEBO
Emitter Cutoff Current
(VEB=-5.0V, IC=0)
hFE(1) DC Current Gain
(VCE=-2.0V, IC=-150mA) BCX52
BCX52-10
BCX52-16
63
63
100
---
---
---
250
160
250
---
hFE(2) DC Current Gain
(VCE=2.0V, IC=-5.0mA)
hFE(3) DC Current Gain
(VCE=-2.0V, IC=-500mA)
VCE(sat) Collector-Emitter Saturation Voltage
(IC=-500mA,IB=-50mA)
VBE(on) Base-Emitter Voltage
(IC=-500mA, VCE=-2.0V)
fTTransition Frequency
(VCE=-5V, IC=-10mA,
f=100MHz) --- 50 --- MHz
omponents
20736 Marilla Street Chatsworth
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MCC
SOT-89
-55 to +150 OC
-60 --- --- V
-60 --- --- V
-5 --- --- V
Range
Range
-5 --- --- V
63
--- ---
--- ---
--- ---
--- ---
40
-0.1
-0.1
-0.5
-1 V
V
uA
uA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V(BR)CEO
V(BR)CBO
V(BR)EBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
-60
-60
-5
V
V
V
www.mccsemi.com
1 of 3
25
B
A
E
D
GH
F
K
J
C
1.55
.061 REF.
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
TM
Micro Commercial Components
Revision: B 2013/01/01
Halogen free available upon request by adding suffix "-HF"
•