Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T2563N Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Periodische Ruckwarts-Spitzensperrspannung Kenndaten repetitive peak and reverse voltages Tvj = -40C... Tvj max ElektrischeT Eigenschaften = 0C... T Periodische Ruckwarts-Spitzensperrspannung repetitive peak reverse voltages vj vj max Durchlastrom-Grenzeffektivwert maximum RMS on-state current VRRM 7500 8000 V V VRRM 7700 8200 V V ITRMSM 5600 A Dauergrenzstrom average on-state current TC = 85 C TC = 60 C ITAVM 2560 A 3570 A Stostrom-Grenzwert surge current Tvj = 25 C, tP = 10 ms Tvj = Tvj max, tP = 10 ms ITSM 63000 A 56000 A Grenzlastintegral It-value Tvj = 25 C, tP = 10 ms Tvj = Tvj max, tP = 10 ms It 19800 10 As 15700 10 As Kritische Stromsteilheit critical rate of rise of on-state current DIN IEC 60747-6 f = 50 Hz, PLM = 40mW, trise = 0,5s (diT/dt)cr Kritische Spannungssteilheit critical rate of rise of off-state voltage Tvj = Tvj max, vD = 0,67 VDRM th 5.Kennbuchstabe / 5 letter H (dvD/dt)cr Charakteristische Werte / Characteristic values Schutzzundspannung (statisch) Protective break over voltage Tvj = 0C ... Tvj max VBO min. 7500 V Durchlaspannung on-state voltage Tvj = Tvj max , iT = 6000A, vD = 100V vT typ. max. 2,75 V 2,95 V Schleusenspannung threshold voltage Tvj = Tvj max V(TO) typ. max. 1,23 V 1,28 V Ersatzwiderstand slope resistance Tvj = Tvj max rT typ. max. 0,253 m 0,278 m Durchlakennlinie on-state characteristic Tvj = Tvj max typ. 300 A/s 2000 V/s minimale Zundlichtleistung minimum gate trigger light power Tvj = 25C, vD = 100V IGT -0,00607 0,000181 0,162 0,00342 -0,00503 0,000187 0,160 0,00570 40 mW max. Haltestrom holding current Tvj = 25C IH max. 100 mA Einraststrom latching current Tvj = 25C, vD = V, PLM = 40mW, trise = 0,5s IL max. 1 A Ruckwarts-Sperrstrom reverse blocking current Tvj = Tvj max vR = VRRM iR max. 900 mA Zundverzug gate controlled delay time DIN IEC 60747-6 Tvj = 25 C, vD = 1000V , PLM = 40mW, trise = 0,5s tgd max. prepared by: J. Przybilla date of publication: v T = A + B i T + C Ln ( i T + 1) + D iT approved by: R. Keller BIP AM / SM PB, 2001-10-18, Przybilla J. / Keller max. revision: A B C D A B C D 5 s 24.07.03 7 Seite/page 1/7 Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T2563N Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Freiwerdezeit circuit commutated turn-off time Tvj = Tvj max, iTM = ITAVM = 100 V, v = 0,67 V ThermischevdvEigenschaften /dt = 20 V/s, -di /dt = 10 A/s / 4 letter O Mechanische4.Kennbuchstabe Eigenschaften T =T RM DM D Sperrverzogerungsladung recovered charge Ruckstromspitze peak reverse recovery current Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink vj tq DRM T th vj max iTM = ITAVM, -diT/dt = 10 A/s VR = 0,5VRRM, VRM = 0,8VRRM Tvj = Tvj max iTM = ITAVM, -diT/dt = 10 A/s VR = 0,5VRRM, VRM = 0,8VRRM typ. 550 max. 22 max. 400 s Qr mAs IRM Kuhlflache / cooling surface beidseitig / two-sided, = 180sin beidseitig / two-sided, DC Anode / anode, DC Kathode / cathode, DC RthJC Kuhlflache / cooling surface beidseitig / two-sided einseitig / single-sided RthCH max. max. max. max. 0,0046 0,0043 0,0075 0,0100 A C/W C/W C/W C/W C/W max. 0,001 max. 0,002 C/W 120 C Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj max Betriebstemperatur operating temperature Tc op -40...+120 C Lagertemperatur storage temperature Tstg -40...+150 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see annex Seite 3 page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Anpresskraft clamping force F Gewicht weight G 90...130 typ. 4000 g Kriechstrecke creepage distance Schwingfestigkeit vibration resistance kN 49 mm f = 50 Hz 50 m/s Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen technischen Erlauterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. BIP AM / SM PB, 2001-10-18, Przybilla J. / Keller Seite/page 2/7 Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T2563N Mabild 4.1 1 1: Anode/Anode 2 2: Kathode/Cathode 4.1: Gate BIP AM / SM PB, 2001-10-18, Przybilla J. / Keller Seite/page 3/7 Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor R,t - Werte R R,T-Werte beidseitig two-sided anodenseitg anode-sided kathodenseitig cathode-sided T2563N Analytische Elemente des transienten Warmewiderstandes Z thJC Analytical elements of transient thermal impedance Z thJC Pos. n 1 2 3 4 5 Rthn [C/W] 0,00183 0,00132 0,00075 0,00038 0,00002 n [s] 1,9 0,3 0,065 0,011 0,003 Rthn [C/W] 0,00465 0,00052 0,00157 0,00054 0,00022 n [s] 7,5 0,85 0,225 0,029 0,0075 Rthn [C/W] 0,00715 0,00052 0,00157 0,00054 0,00022 n [s] 10,2 0,85 0,225 0,029 0,0075 ZthJC = Analytische Funktion / Analytical function: 6 nmax n=1 Rthn 1 - e 7 -t n 0 ,0 1 2 0 ,0 1 c 0 ,0 0 8 th JC Z 0 ,0 0 6 [K/W] a 0 ,0 0 4 d 0 ,0 0 2 0 0 ,0 0 1 0 ,0 1 0 ,1 1 10 100 t [s ] Transienter innerer Warmewiderstand fur DC/ Transient thermal impedance Z thJC = f(t) for DC Beidseitige Kuhlung / Two-sided cooling Anodenseitige Kuhlung / Anode-sided cooling Kathodenseitige Kuhlung / Cathode-sided cooling BIP AM / SM PB, 2001-10-18, Przybilla J. / Keller Seite/page 4/7 Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T2563N 7000 Diagramme Diagramme Durchlasskennlinie 6000 5000 m a x. typ . i T [V] 4000 3000 2000 1000 0 0 0,5 1 1,5 2 2,5 3 3,5 v T [V ] Grenzdurchlakennlinie / Limiting on-state characteristic iT = f(vT) Tvj = Tvj max BIP AM / SM PB, 2001-10-18, Przybilla J. / Keller Seite/page 5/7 Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T2563N 45 beidseitig 40 35 30 r Q [mAs] 25 20 15 10 5 0 0 5 10 15 20 25 30 35 - d i/d t [ A / s ] Sperrverzogerungsladung / Recovered charge Qr = f(-di/dt) Tvj=Tvjmax, vR=0,5 VRRM, VRM=0,8 VRRM BIP AM / SM PB, 2001-10-18, Przybilla J. / Keller Seite/page 6/7 Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T2563N 1000 Ta bei Sinus 900 800 700 500 I RM [A] 600 400 300 200 100 0 0 5 10 15 20 25 30 35 - d i/d t [ A / s ] Ruckstromspitze / Peak reverse recovery current IRM = f(-di/dt) Tvj=Tvjmax, vR=0,5 VRRM, VRM=0,8 VRRM BIP AM / SM PB, 2001-10-18, Przybilla J. / Keller Seite/page 7/7 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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