Maximum Ratings
Operating temperature : -55 to +150
Storage temperature : -55 to +150
BC846A
THRU
BC848C
NPN
Plastic-Encapsulate
Transistors
Features
Power Dissipation: 0.225W (Tamb=25)(Note 1)
Collector Current: 0.1A
Electrical Characteristics @ 25 Unless Otherwise Specified
Symbol
Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CBO Collector-Base Breakdown Voltage
(IC=10µAdc, IE=0) BC846
BC847
BC848
---
---
---
80
50
30
Vdc
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
BC846
BC847
BC848
---
---
---
65
45
30
Vdc
V(BR)EBO Collector-Emitter Breakdown Voltage
(IE=10µAdc, IC=0)
---
6 Vdc
ICBO Collector Cut-off Current
BC846 (VCB=80V, IE=0)
BC847 (VCB=50V, IE=0)
BC848 (VCB=30V, IE=0)
--- 0.1 µAdc
ICEO Collector Cut-off Current
BC846 (VCE=60V, IB=0)
BC847 (VCE=45V, IB=0)
BC848 (VCE=30V, IB=0)
--- 0.1 µAdc
IEBO Emitter Cut-off Current
(VEB=5V, IC=0mA) --- 0.1 µAdc
HFE(1) DC Current Gain(VCE=5V, IC=2mA)
BC846A, 847A, 848A
BC846B, 847B, 848B
BC847C, BC848C
110
200
420
220
450
800
VCE(sat) Collector-Emitter Saturation Voltage
(IC=100mA, IB=5mA) --- 0.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=100mA, IB=5mA) --- 1.1 Vdc
fT Transition Frequency
(VCE=5V, IC=10mA, f=100MHz) 100 --- MHz
Note 1: Transistor mounted on an FR4 printed-circuit board
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20736 Marilla Street Chatsworth
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MCC
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.110 .120 2.80 3.04
B.083 .098 2.10 2.64
C.047 .055 1.20 1.40
D.035 .041 .89 1.03
E.070 .081 1.78 2.05
F.018 .024 .45 .60
G.0005 .0039 .013 .100
H.035 .044 .89 1.12
J.003 .007 .085 .180
K.015 .020 .37 .51
A
B
C
D
E
F
G
H
J
.079
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
SOT-23
www.mccsemi .com
Revision: 1 2004/11/23