MCC BC846A THRU BC848C omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features * * NPN Plastic-Encapsulate Transistors Power Dissipation: 0.225W (Tamb=25)(Note 1) Collector Current: 0.1A Maximum Ratings * * SOT-23 Operating temperature : -55 to +150 Storage temperature : -55 to +150 A D Electrical Characteristics @ 25 Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) VCE(sat) VBE(sat) fT C Collector-Base Breakdown Voltage (IC=10Adc, IE=0) BC846 BC847 BC848 Collector-Emitter Breakdown Voltage (IC=10mAdc, IB=0) BC846 BC847 BC848 Collector-Emitter Breakdown Voltage (IE=10Adc, IC=0) Collector Cut-off Current BC846 (VCB=80V, IE=0) BC847 (VCB=50V, IE=0) BC848 (VCB=30V, IE=0) Collector Cut-off Current BC846 (VCE=60V, IB=0) BC847 (VCE=45V, IB=0) BC848 (VCE=30V, IB=0) Emitter Cut-off Current (VEB=5V, IC=0mA) DC Current Gain(VCE=5V, IC=2mA) BC846A, 847A, 848A BC846B, 847B, 848B BC847C, BC848C Collector-Emitter Saturation Voltage (IC=100mA, IB=5mA) Base-Emitter Saturation Voltage (IC=100mA, IB=5mA) Transition Frequency (VCE=5V, IC=10mA, f=100MHz) B Vdc ------- 80 50 30 F E Vdc ------- 65 45 30 ----- 6 0.1 H G Vdc DIMENSIONS Adc --- 0.1 Adc --- 0.1 Adc 110 200 420 --- 220 450 800 0.5 Vdc --- 1.1 Vdc 100 --- MHz J DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm Note 1: Transistor mounted on an FR4 printed-circuit board .037 .950 .037 .950 www.mccsemi.com Revision: 1 2004/11/23