Rugged Power MOSFETs IRF9630, IRF9631, IRF9632, IRF9633 Avalanche-Energy-Rated P-Channel Power MOSFETs -5.5 A and -6.5 A, -150 V and -200 V fos(on) = 0.8 Q and 1.20 Features: = Single pulse avalanche energy rated = SOA is power-dissipation limited Nanosecond switching speeds @ Linear transfer charactoristics 8 High input impedance The IRF9630, IRF9631, IRF9632 and IRF9633 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are p-channel enhancement-mode silicon gate power field-effect tran- sistors designed for applications such as switching regu- lators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-220AB plastic package. ABSOLUTE-MAXIMUM RATINGS File Number 2224 TERMINAL DIAGRAM GO- 92658-43262 P-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATION SOURCE jp - DRAIN care 92Cs -39528 JEDEC TO-220AB DRAIN | (FLANGE) O TOP VIEW CHARACTERISTIC IRF9630 IRF9631 IRF9632 IRF9633_ | UNITS Drain-Source Voltage @ Vos ~200 -150 -200 -150 v Drain-Gate Voltage (Ras = 20 kQ) @ Voer =200 ~150 -200 -150 Vv Continuous Drain Current lo @ Tc = 25C -6.5 -6.5 -5.5 -.5 A Continuous Drain Current lo @ Tc = 100C -4.0 -4.0 -3.5 -3.5 A Pulsed Drain Current @ Ips -26 -26 =22 -22 A Gate-Source Voltage Ves +20 Vv Maximum Power Dissipation Po @ Tec = 26C 75 (See Fig. 14) Ww. Linear Derating Factor 0.6 (See Fig. 14) w/c Single-Pulse Avalanche Energy Rating Eu 500 rj Operating Junction and Storage Temperature To, Tes -55 to +150 C Range Lead Temperature 300 (0.063 in. (1.6 mm) from case for 10s) C 6-386Rugged Power MOSFETs ELECTRICAL CHARACTERISTICS, At T; = 25C (Unless Otherwise Specified) IRF9630, IRF9631, IRF9632, IRF9633 CHARACTERISTIC TYPE |MIN. | TYP. |MAX. | UNITS TEST CONDITIONS Drain-Source Breakdown Voltage BVoss | IRF8630 -s00 | _ V Ves = OV IRF9632 " IRF9631 IRF9633 -160 _ - v to = -250 pA Gate Threshold Voltage Vas(th) ALL -2.0 _ -4.0 v Vos = Vas, Ip = -250 pA Gate-Source Leakage Forward loss ALL - | -500 nA Vas = -20V Gate-Source Leakage Reverse lass ALL _ _ 500 nA Vas = 20V Zero-Gate Voltage Drain Current lbss - _ -250 HA Vos = Max. Rating, Vas = 0 V ALL |-1000 HA Vos = Max. Rating x 0.8, Vas = 0 V, Tc = 125C On-State Drain Current (2) lo(on) | IRF9630 | AF O6S * Z _ . Vos > Io(On) x ros(on) max., Ves = -10 V TRFS632 es 7 _ A os > Ip(On) x rps: Ves IRF9633 Static Drain-Source On-State tos(on) | IRF9630 Resistance waroest | | 2S | OS a IRF9832 Vas = -10 V, In = -3.5 A inroeas | | 78 | 1? f forward Transconductance (2) Qte ALL 22 (35 [ S$ (0) [Vos > lo(on) x ros(on) max., Ip = -3.5A Input Capacitance Cie ALL _ 550 - pF Output Capacitance Cos ALL [170] pF Vas = 9 V. Vos = -25 V, f= 1.0 MHz Reverse Transfer Capacitance Crea ALL - 50 _ pF See Fig. 10 Turn-On Delay Time ta(on) ALL _ 30 50 ns Voo = 0.5 BVoss, Ip = -3.5 A, Zo = 50N Rise Time t ALL _ $0 100 ns See Fig. 17 Turn-Oft Delay Time ta(oft) ALL _ 50 100 ns (MOSFET switching times are essentially Fall Time tr ALL 40 80 ns independent of operating temperature.) Total Gate Charge Q, Vas = -15 V, lp = -8.0 A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) ALL ~ 3 6 ne See Fig. 18 for test circuit. (Gate charge is essentially Gate-Source Charge Qos ALL _ 18 26 nc independent of operating temperature.) Gate-Drain ((Miller") Charge Qua ALL - 13 19 nc Internal Drain Inductance Lo 3.5 _ nH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die. internal device ALL _ 45 - nH Measured from the inductances. drain lead, 6 mm (0.25 in.) 8 from package to to) center of die. oll internal Source Inductance Ls ALL = 7.5 - nH Measured from the s ls source lead, 6 mm (0.25 in.) Q from package to source bonding pad. Junction-to-Case Rec ALL - | 167 | C/W Case-to-Sink Recs ALL _ 1.0 C/W_ | Mounting surface flat, smooth, and greased. Junction-to-Ambient Rea ALL - ~ 80 C/W [ Typical socket mount. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Source Current \s IRF9630 Modified MOSFET symbol (Body Diode) IRF9631 | ~ 445 A showing the integral IRF9632 reverse P-N junction rectifier. 2 inFoeaa | | ~ | A Pulse Source Current lesa iRF9630 olffa (Body Diode)@ inFe631 | | ~ | 26 A . IRF9632 Q inegesa | ~ | ~ | A Diode Forward Voltage @) Vso inrgeso _ |-as v To = 25C, Ip = -6.5 A, Vos = OV ineeeas - _- -1.5 v Te = 26C, ts = -5.5 A, Vas = OV Reverse Recovery Time te ALL _ 400 = ns Ts = 180C, Ir = -6.5 A, dir/dt = 100 A/us Reverse Recovered Charge Qaa ALL _ 2.6 _ uC Ty = 150C, le = -6.5 A, dir/dt = 100 A/us Forward Turn-on Time ton ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. OT, = 25C to 150C. Pulse Test: Pulse width < 300 ys. Duty Cycle = 2% Repetitive Rating: Pulse width limited by max. junction temperature See Transient Thermal impedance Curve (Fig. 5). @ Voo = 50 V, Starting Ty = 25C, L = 17.75 mH, Ro = 25 0, Peak h = 6.5 A (See Figs. 15 & 16). 6-387Rugged Power MOSFETs IRF9630, IRF9631, IRF9632, IRF9633 6-388 ip, DRAIN CURRENT (AMPERES) a aw & z < e z we < = > o z Z a a 1 ss 1 o 3 710 -20 ~30 -40 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) -50 92C$-43308 Fig. 1 - Typical output characteristics. =2 =4 -6 -8 Vpg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 10 9208-43310 Fig. 3 - Typical saturation characteristics. o = wow 9 = oN 2 8 re z w G 3 & w 2 - 9 a he wu w ota Ww tut NS a $38 zrz cea Suc ere BOF = a2 nis = z THERMAL 2 6 10-5 1074 SINGLE PULSE 190-3 to-2 a w wi a = < t z w > 3 z 6 Ip, DRAIN CURRENT (AMPERES) 80 us PULSE TEST Vos > Ipjon) * -2 -~4 ~6 -8 -~10 Vgs, GATE-TO-SOURCE VOLTAGE (VOLTS) 92CS-43309 Fig. 2 - Typical transfer characteristics. iS LIMITED 150 C MAX. = 1.67 K/W 468 -1000 2 468 2 4 68 2 -10 100 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 9268-44026 Fig. 4 - Maximum safe operating area. . DUTY FACTOR, D = ty/tg - PER UNIT BASE = Rg yc = 1,67 DEG. C/w. Tam -Te =Pom> . 1071 1 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) 92GM- 43325, Fig. 5 - Maximum effective transient thermal impedance, junction- to-case vs. pulse duration.Rugged Power MOSFETs 80 uS PULSE TEST Vos > 'pien) * Fosion) max. Ty = 25C Ty = 128C -9 12 15 Ip, DRAIN CURRENT (AMPERES) 9208-43312 Fig. 6 - Typical transconductance vs. drain current. z = 9 a x < wi a S a N a 31. =z x z 8 3 > 120 160 Ty, JUNCTION TEMPERATURE (C) 92CS-43294 Fig. 8 - Breakdown voltage vs. temperature. 2000] Vgs =0 f=1 MHz 1600 Cigs = Cgs + Cg, Cag SHORTED | . Cres = Cga J 4 4200 Cone = Cag + ot St Q Oss ds Cos + Cga sa = Cds + Cgg _ Sg = 800 | \ PL Ciss . N 400 NN NX [~~ Coss P1_Cras oO -10 20 -30 ~40 50 Vps. DRAIN-TO-SOURGE VOLTAGE (VOLTS) 9208-43314 Fig. 10 - Typical capacitance vs. drain-to-source voltage. IRF9630, IRF9631, IRF9632, IRF9633 Ty = 150C 04 -0.6 -0.8 -1.0 -1.2 -1.4 -16 ~-1.8 Vgp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) 92CS-43270 Fig. 7 - Typical source-drain diode forward voltage. ~_ a 1.0 DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) Rpsjon)- Ty, JUNCTION TEMPERATURE (C) 92C$-49313 Fig. 9 - Normalized on-resistance vs. temperature. Ip =-8A \ FOR TEST CIRCUIT SEE FIGURE 18 5 -10 Sy WN Vgs, GATE-TO-SOURCE VOLTAGE (VOLTS) 8 Vos = 160 V, IRF9630,9632 Vpg = -100V - Vps = -40 -20 -25 8 16 24 32 40 Qg, TOTAL GATE CHARGE {nC) 9205-43479 Fig. 11 - Typical gate charge vs. gate-to-source voltage. 6-389Rugged Power MOSFETs IRF9630, IRF9631, IRF9632, IRF9633 2-01 Rosion) MEASURED WITH CURRENT PULSE OF 2.0 1S DURATION. INITIAL Ty = 25 C. (HEATING | EFFECT OF 2.0 uS PULSE 1S MINIMAL) w g. a 33 / =x 86 12 24 v 10 2% =- 3% SO 6% os sg a BS Vag = -20 ao 04 =s =10 15 =20 =25 ip, DRAIN CURRENT (AMPERES) 92C$-43316 Fig. 12 - Typical on-resistance vs. drain current. & E & 3 a a z & 20 40 #60 80 100 120 140 160 180 200 Tc, CASE TEMPERATURE (C) 9209-43305 Fig. 14 - Power vs. temperature derating curve. Rp ouT Ps L ty Rg + a Le Vag =-10V VARY ty TO OBTAIN REQUIRED PEAK I, B2CS-43280 Fig. 17 - Switching time test circuit. 6-390. a & & = < & ia & 3 z = o 2 25 50 75 100 125 150 Tc. CASE TEMPERATURE (C) 87G8-<e020 Fig. 13 - Maximum drain current vs. case temperature. tp {ol T Veg =-10V VARY tp TO OBTAIN REQUIRED PEAK tL 9208-43276 Fig. 15 - Unclamped inductive test circuit. Q--- tp 8Ypss 92CS-43279 Fig. 16 - Unclamped inductive waveforms. ~v (ISOLATED CURRENT SUPPLY) REGULATOR 1 4 SAME TYPE earteny 4 02 a 50 K &< aS DUT e our o 4 - 1.5m $ FT +Vos 'g 'p CURRENT CURRENT SAMPLING SAMPLING RESISTOR RESISTOR 92c8-aa281 Fig. 18 - Gate charge test circuit.