SEMIPONTTM 6
3-Phase Bridge Rectifier
+ IGBT braking chopper
SKDH 146/-L200
Preliminary Data
Features
 
  
   
  
 
  
  
!  "#$$% & &
!' ()  * + #, -,.
Typical Applications
 &
   
 
 / 
DH-L
%012 %002) %02 34 "5$ 6  &   
% % 4 7$ 8
9$$ 7$$ 1: "5#;$7 < '.$$
Absolute Maximum Ratings 4 .- 8)   
Symbol Conditions Values Units
Bridge - Rectifier
34 7$ 8= &  "5$ 6
3>12;312 4 "$ =  "7$8 =? ".-$ 6
@ 4 "$ =  "7$8 =? A7$$ 6@
IGBT - Chopper
%+1;%B+1 #$$ ; .$ %
34 .- A$ 8 "7- "5$ 6
32 4 " = 4 .- A$ 8 ,7$ ,$$ 6
Freewheeling - CAL Diode
%002 #$$ %
3>4 .- A$ 8 .$$ "-$ 6
3>2 4 " = 4 .- A$ 8 5$$ ,$$ 6
&?  C 3B / < 5$ *** D "A- <5$***D ".- 8
 < 5$ *** D ".- 8
 ) "$ .#$ 8
% ** -$ () 021 " * ; " ,$$$ ; ,#$$ %
Characteristics 4 .- 8)   
Symbol Conditions min. typ. max. Units
Diode - Rectifier
%E ; ?4 ".- 8 $)7 ; 5 % ; F
0?<   $)7 :;G
Thyristor - Rectifier
%>E ; ?4 ".- 8 $)7- ; , $)9 ; 5)- % ; F
0?<  / $)# :;G
3B ?4 ".- 8= ** # 6
%B ; 3B ?4 .- 8 , ; "-$ % ; 6
3;3'?4 .- 8 .-$ ; #$$ 6
&;  ?4 ".- 8 -$$ %;H
;  ?4 ".- 8 ".- 6;H
IGBT - Chopper
%+ 34 ,$$ 6) ?4 .- 8=
%B+ 4 "- %
")5- ")7- %
0?<  3B $)5 :;G
 ; &   &I "A" ; ".9 
 ; % 4 ,$$ %= %B+ 4 "- %=
34 "-$ 6= ?4 ".- 8=
"A"7 ; ""$ 
+D+ ?4 ".- 8= 0B4 "# J=
& 
,,)9 K
CAL - Diode - Freewheeling
%E ; ?4 ".- 8 $)A- ; .)" ")" ; , % ; F
0?<   $)# :;G
3002 &   &I -$ 6
L 3>4 "-$ 6= %04 < ,$$ %=
3>; 4 < <,$$ 6;H
"$ H
+ %B+ 4$%=?4 ".- 8 $)9 K
Temperature Sensor
01 4 8= F
Mechanical data
21 M .)-- ,)5- N
SKDH 146/-L200
1 05-09-2007 DIL © by SEMIKRON
Fig. 1 Power dissipation per module vs. output current Fig. 2 Surge overload current vs. time
Fig. 3 Forward characteristic of single rectifier diode Fig. 4 Forward characteristic of single thyristor
Fig. 5 Typ gate charge characteristic Fig.6 Output IGBT characteristics Ic=f(Vce), Tj=25°C
SKDH 146/-L200
2 05-09-2007 DIL © by SEMIKRON
Fig. 7 Output IGBT characteristics Ic=f(Vce), Tj=125°C Fig. 8 Turn-on/-off energy=f(Ic)
Fig. 9 Turn-on/-off energy=f(Rg) Fig.10 Freewheeling diode forward characteristic
Fig. 11 Gate trigger characteristic of a single thyristor
SKDH 146/-L200
3 05-09-2007 DIL © by SEMIKRON
UL recognized
File n&#176; E 63 532 Dimensions in mm
 B #9
 B #9
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKDH 146/-L200
4 05-09-2007 DIL © by SEMIKRON