2014-2016 Microchip Technology Inc. DS20005308C-page 1
MCP16331
Features
• Up to 96% Efficiency
• Input Voltage Range: 4.4V to 50V
• Output Voltage Range: 2.0V to 24V
• 2% Output Voltage Accuracy
• Qualification: AEC-Q100 Rev. G, Grade 1
(-40°C to 125°C)
• Integrated N-Channel Buck Switch: 600 m
• Minimum 500 mA Output Current Over All Input
Voltage Ranges (see Figure 2-9 for Maximum
Output Current vs. V
IN
)
- Up to 1.2A output current at 3.3V and
5V V
OUT
, V
IN
> 12V, SOT-23 package at
+25°C ambient temperature
- Up to 0.8A output current at 12V V
OUT
,
V
IN
> 18V, SOT-23 package at
+25°C ambient temperature
•500 kHz Fixed Frequency
• Adjustable Output Voltage
• Low Device Shutdown Current
• Peak Current Mode Control
• Internal Compensation
• Stable with Ceramic Capacitors
• Internal Soft Start
• Internal Pull-up on EN
• Cycle-by-Cycle Peak Current Limit
• Undervoltage Lockout (UVLO): 4.1V to Start;
3.6V to Stop
• Overtemperature Protection
• Available Package: 6-Lead SOT-23,
8-Lead 2x3 TDFN
Applications
•PIC
®
MCU/dsPIC
®
DSC Microcontroller Bias
Supply
• 48V, 24V and 12V Industrial Input
DC-DC Conversion
• Set-Top Boxes (STB)
• DSL Cable Modems
• Automotive
• AC/DC Adapters
• SLA Battery-Powered Devices
• AC-DC Digital Control Power Source
• Power Meters
•Consumer
• Medical and Health Care
• Distributed Power Supplies
General Description
The MCP16331 is a highly integrated, high-efficiency,
fixed frequency, step-down DC-DC converter in a popular
6-pin SOT-23 or 8-pin 2x3 TDFN package that operates
from input voltage sources up to 50V. Integrated features
include a high-side switch, fixed frequency Peak Current-
Mode control, internal compensation, peak current limit
and overtemperature protection. Minimal external com-
ponents are necessary to develop a complete step-down
DC-DC converter power supply.
High converter efficiency is achieved by integrating the
current-limited, low-resistance, high-speed N-Channel
MOSFET and associated drive circuitry. High switching
frequency minimizes the size of external filtering
components, resulting in a small solution size.
The MCP16331 can supply 500 mA of continuous
current while regulating the output voltage from 2.0V to
24V. An integrated, high-performance Peak Current-
Mode architecture keeps the output voltage tightly regu-
lated, even during input voltage steps and output current
transient conditions that are common in power systems.
The EN input is used to turn the device on and off.
While off, only a few µA of current are consumed from
the input for power shedding and load distribution
applications. This pin is internally pulled up, so the
device will start, even if the EN pin is left floating.
Output voltage is set with an external resistor divider.
The MCP16331 is offered in a space-saving 6-lead
SOT-23 and 8-lead 2x3 TDFN surface mount package.
Package Type
MCP16331
6-Lead SOT-23
MCP16331
8-Lead 2x3 TDFN*
V
FB
GND
EN
1
2
3
6
4
SW
BOOST
5
V
IN
NC
EN
NC
1
2
3
4
8
7
6
5
SW
EP
9
V
IN
BOOST
V
FB
GND
*Includes Exposed Thermal Pad (EP); see Table 3-1.
High-Voltage Input Integrated Switch Step-Down Regulator
MCP16331
DS20005308C-page 2 2014-2016 Microchip Technology Inc.
Typical Applications
V
IN
GND
V
FB
SW
V
IN
6.0V to 50V
V
OUT
5.0V at 500 mA
C
OUT
2 X10 µF
C
IN
2x10 µF
L
1
22 µH
BOOST
52.3 k
10 k
EN
1N4148
100V
Schottky
Diode
C
BOOST
100 nF
V
IN
GND
V
FB
SW
V
IN
4.5V to 50V
V
OUT
3.3V at 500 mA
C
OUT
2 X10 µF
C
IN
2x10 µF
L
1
15 µH
BOOST
31.6 k
10 k
EN
1N4148
100V
Schottky
Diode
C
BOOST
100 nF
0
10
20
30
40
50
60
70
80
90
100
10 100
1000
Efficiency (%)
Output Current (mA)
VOUT=3.3V
VOUT=5V
VIN=12V
Note: EN has an internal pull-up, so the device will start even if the EN pin is left floating.
20 pF
20 pF
Optional
Optional
2014-2016 Microchip Technology Inc. DS20005308C-page 3
MCP16331
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
V
IN,
SW ............................................................... -0.5V to 54V
BOOST – GND ................................................... -0.5V to 60V
BOOST – SW Voltage........................................ -0.5V to 6.0V
V
FB
Voltage ........................................................ -0.5V to 6.0V
EN Voltage ............................................. -0.5V to (V
IN
+ 0.3V)
Output Short-Circuit Current .................................Continuous
Power Dissipation .......................................Internally Limited
Storage Temperature ....................................-65°C to +150°C
Ambient Temperature with Power Applied ......-40°C to +125°C
Operating Junction Temperature...................-40°C to +160°C
ESD Protection on All Pins:
HBM..................................................................... 4 kV
MM ......................................................................300V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at those or any other conditions above those indi-
cated in the operational sections of this specification is
not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Characteristics : Unless otherwise indicated, T
A
= +25°C, V
IN
= V
EN
= 12V, V
BOOST
– V
SW
= 3.3V,
V
OUT
= 3.3V, I
OUT
= 100 mA, L = 15 µH, C
OUT
= C
IN
= 2 x 10 µF X7R Ceramic Capacitors.
Boldface specifications apply over the T
A
range of -40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Input Voltage V
IN
4.4 —50 VNote 1
Feedback Voltage V
FB
0.784 0.800 0.816 V
Output Voltage Adjust Range V
OUT
2.0 —24 VNote 1, Note 3
Feedback Voltage
Line Regulation
|V
FB
/V
FB
)/V
IN
| — 0.002 0.1 %/V V
IN
= 5V to 50V
Feedback Voltage
Load Regulation
|V
FB
/V
FB
| — 0.13 0.35 % I
OUT
= 50 mA to
500 mA
Feedback Input Bias Current I
FB
—+/- 3 —nA
Undervoltage Lockout Start UVLO
STRT
—4.1 4.4 V V
IN
rising
Undervoltage Lockout Stop UVLO
STOP
33.6 — V V
IN
falling
Undervoltage Lockout
Hysteresis
UVLO
HYS
—0.5 — V
Switching Frequency f
SW
425 500 550 kHz
Maximum Duty Cycle DC
MAX
90 93 — % V
IN
= 5V; V
FB
= 0.7V;
I
OUT
= 100 mA
Minimum Duty Cycle DC
MIN
— 1 — % Note 4
NMOS Switch-On Resistance R
DS(ON)
—0.6 —V
BOOST
– V
SW
= 5V,
Note 3
NMOS Switch Current Limit I
N(MAX)
—1.3 — A V
BOOST
– V
SW
= 5V,
Note 3
Quiescent Current I
Q
— 1 1.7 mA V
IN
= 12V; Note 2
Quiescent Current – Shutdown I
Q
— 6 10 A V
OUT
= EN = 0V
Output Current I
OUT
500 — — mA Note 1; see Figure 2-9
Note 1: The input voltage should be > output voltage + headroom voltage; higher load currents increase the input
voltage necessary for regulation. See characterization graphs for typical input to output operating voltage
range.
2: V
BOOST
supply is derived from V
OUT
.
3: Determined by characterization, not production tested.
4: This is ensured by design.
MCP16331
DS20005308C-page 4 2014-2016 Microchip Technology Inc.
EN Input Logic High V
IH
1.9 — — V
EN Input Logic Low V
IL
— — 0.4 V
EN Input Leakage Current I
ENLK
—0.007 0.5 µA V
IN
= EN = 5V
Soft Start Time t
SS
—600 —µs EN Low-to-high,
90% of V
OUT
Thermal Shutdown Die
Temperature
T
SD
—160 —CNote 3
Die Temperature Hysteresis T
SDHYS
—30 —CNote 3
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics : Unless otherwise indicated, T
A
= +25°C, V
IN
= V
EN
= 12V, V
BOOST
– V
SW
= 3.3V,
V
OUT
= 3.3V, I
OUT
= 100 mA, L = 15 µH, C
OUT
= C
IN
= 2 x 10 µF X7R Ceramic Capacitors.
Boldface specifications apply over the T
A
range of -40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: The input voltage should be > output voltage + headroom voltage; higher load currents increase the input
voltage necessary for regulation. See characterization graphs for typical input to output operating voltage
range.
2: V
BOOST
supply is derived from V
OUT
.
3: Determined by characterization, not production tested.
4: This is ensured by design.
TEMPERATURE SPECIFICATIONS
Electrical Specifications
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Operating Junction Temperature Range T
J
-40 —+125 °C Steady State
Storage Temperature Range T
A
-65 —+150 °C
Maximum Junction Temperature T
J
— — +160 °C Transient
Package Thermal Resistances
Thermal Resistance, 6L-SOT-23
JA
—190.5 —°C/W EIA/JESD51-3 Standard
Thermal Resistance, 8L-2x3 TDFN
JA
—52.5 —°C/W EIA/JESD51-3 Standard
2014-2016 Microchip Technology Inc. DS20005308C-page 5
MCP16331
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, V
IN
= EN = 12V, C
OUT
= C
IN
= 2 x10 µF, L
= 15 µH, V
OUT
= 3.3V, I
LOAD
= 100 mA,
T
A
= +25°C, 6-Lead SOT-23 package.
FIGURE 2-1: 3.3V V
OUT
Efficiency vs.
I
OUT
.
FIGURE 2-2: 5V V
OUT
Efficiency vs. I
OUT
.
FIGURE 2-3: 12V V
OUT
Efficiency vs. I
OUT
.
FIGURE 2-4: 24V V
OUT
Efficiency vs.
I
OUT
.
FIGURE 2-5: 3.3V V
OUT
Effi ciency vs.
V
IN
.
FIGURE 2-6: 5V V
OUT
Efficiency vs. V
IN
.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
10
20
30
40
50
60
70
80
90
100
1 10 100 1000
Efficiency (%)
IOUT (mA)
V
IN
= 6V
V
IN
= 12V
V
IN
= 24V
V
IN
= 48V
0
10
20
30
40
50
60
70
80
90
100
1 10 100 1000
Efficiency (%)
IOUT (mA)
V
IN
= 12V
V
IN
= 24V
V
IN
= 48V
0
10
20
30
40
50
60
70
80
90
100
1 10 100 1000
Efficiency (%)
IOUT (mA)
V
IN
= 24V
V
IN
= 48V
0
10
20
30
40
50
60
70
80
90
100
110100
1000
Efficiency (%)
IOUT (mA)
VIN = 48V
0
10
20
30
40
50
60
70
80
90
100
6 10141822263034384246
50
Efficiency (%)
VIN (V)
IOUT= 10 mA
IOUT= 100 mA
IOUT= 500 mA
0
10
20
30
40
50
60
70
80
90
100
6 1014182226303438424650
Efficiency (%)
V
IN
(V)
IOUT = 10 mA
IOUT = 100 mA
IOUT = 500 mA
MCP16331
DS20005308C-page 6 2014-2016 Microchip Technology Inc.
Note: Unless otherwise indicated, V
IN
= EN = 12V, C
OUT
= C
IN
= 2 x10 µF, L
= 15 µH, V
OUT
= 3.3V, I
LOAD
= 100 mA,
T
A
= +25°C, 6-Lead SOT-23 package
.
FIGURE 2-7: 12V V
OUT
Efficiency vs. V
IN
.
FIGURE 2-8: 24V V
OUT
Efficiency vs. V
IN
.
FIGURE 2-9: Max I
OUT
vs. V
IN
.
FIGURE 2-10: V
FB
vs. Temperature.
FIGURE 2-11: Peak Current Limit vs.
Temperature.
FIGURE 2-12: Switch R
DSON
vs.
Temperature.
0
10
20
30
40
50
60
70
80
90
100
14 18 22 26 30 34 38 42 46
50
Efficiency (%)
VIN (V)
IOUT = 10 mA
IOUT = 100 mA
IOUT = 500 mA
0
10
20
30
40
50
60
70
80
90
100
26 30 34 38 42 46
50
Efficiency (%)
VIN (V)
IOUT
= 10 mA
IOUT = 100 mA
IOUT = 500 mA
0
200
400
600
800
1000
1200
1400
6 10141822263034384246
50
I
OUT
(mA)
VIN (V)
VOUT = 3.3V
VOUT = 5V
VOUT = 12V
VOUT = 24V
0.78
0.79
0.8
0.81
0.82
0.83
-40 -25 -10 5 20 35 50 65 80 95 110 125
Feedback Voltage (V)
Temperature (°C)
VIN =12V
VOUT = 3.3V
IOUT = 100 mA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-40 -25 -10 5 20 35 50 65 80 95 110 125
Peak Current Limit (A)
Temperature (°C)
V
OUT
= 3.3V
V
OUT
= 5V
V
OUT
= 12V
0
0.2
0.4
0.6
0.8
1
1.2
-40 -25 -10 5 20 35 50 65 80 95 110 125
Switch RDSON (
Ω
)
Temperature (°C)
VIN = 6V
VOUT=VBOOST= 3.3V
IOUT = 200 mA
2014-2016 Microchip Technology Inc. DS20005308C-page 7
MCP16331
Note: Unless otherwise indicated, V
IN
= EN = 12V, C
OUT
= C
IN
= 2 x10 µF, L
= 15 µH, V
OUT
= 3.3V, I
LOAD
= 100 mA,
T
A
= +25°C, 6-Lead SOT-23 package
.
FIGURE 2-13: Switch R
DSON
vs. V
BOOST
.
FIGURE 2-14: Unde rvoltage L ockout vs.
Temperature.
FIGURE 2-15: EN Threshold Voltage vs.
Temperature.
FIGURE 2-16: V
OUT
vs. V
IN
.
FIGURE 2-17: Input Quiescent Current vs.
Temperature.
FIGURE 2-18: Shutdown Current vs.
Temperature.
0.4
0.45
0.5
0.55
0.6
0.65
0.7
0.75
0.8
2.533.544.555.5
Switch RDSON (
Ω
)
V
BOOST
(V)
VIN = 6V
VOUT= 3.3V
3
3.4
3.8
4.2
4.6
5
-40 -25 -10 5 20 35 50 65 80 95 110 125
Input Voltage (V)
Temperature (°C)
UVLO START
UVLO STOP
0.9
1
1.1
1.2
1.3
1.4
-40 -25 -10 5 20 35 50 65 80 95 110 125
Enable Voltage (V)
Temperature (°C)
UP
DOWN
VIN = 12V
VOUT = 3.3V
IOUT = 100 mA
3.27
3.275
3.28
3.285
3.29
3.295
5 101520253035404550
V
OUT
(V)
VIN(V)
VOUT = 3.3V
IOUT=100 mA
0.8
0.9
1
1.1
1.2
-40 -25 -10 5 20 35 50 65 80 95 110 125
No Load Input Current (mA)
Temperature (°C)
VIN = 12V
VOUT = 3.3V
4
4.5
5
5.5
6
6.5
7
-40 -25 -10 5 20 35 50 65 80 95 110 125
Shutdown Current (µA)
Temperature (°C)
VIN = 12V
VOUT = 3.3V
MCP16331
DS20005308C-page 8 2014-2016 Microchip Technology Inc.
Note: Unless otherwise indicated, V
IN
= EN = 12V, C
OUT
= C
IN
= 2 x10 µF, L
= 15 µH, V
OUT
= 3.3V, I
LOAD
= 100 mA,
T
A
= +25°C, 6-Lead SOT-23 package
.
FIGURE 2-19: Input Quiescent Current vs.
V
IN
.
FIGURE 2-20: Shutdown Current vs. V
IN
.
FIGURE 2-21: PWM/Skipping I
OUT
Threshold vs. V
IN
.
FIGURE 2-22: Switching Frequency vs.
Temperature.
FIGURE 2-23: Minimum Input Voltage vs.
Output Current.
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
5 101520253035404550
No Load Input Current (mA)
VIN (V)
VOUT = 3.3V
3
6
9
12
15
18
5 101520253035404550
Shutdown Current (µA)
VIN (V)
VOUT = 3.3V
0
5
10
15
20
5 101520253035404550
Output Current (mA)
VIN (V)
VOUT = 5V
VOUT = 3.3V
450
475
500
525
-40 -25 -10 5 20 35 50 65 80 95 110 125
Switching Frequency (kHz)
Temperature (°C)
VIN = 12V
VOUT = 3.3V
IOUT = 200 mA
3.5
3.7
3.9
4.1
4.3
0 0.1 0.2 0.3 0.4 0.5
VIN (V)
Output Current (A)
To Start
To Stop
VOUT=3.3V
2014-2016 Microchip Technology Inc. DS20005308C-page 9
MCP16331
Note: Unless otherwise indicated, V
IN
= EN = 12V, C
OUT
= C
IN
= 2 x10 µF, L
= 15 µH, V
OUT
= 3.3V, I
LOAD
= 100 mA,
T
A
= +25°C, 6-Lead SOT-23 package
.
FIGURE 2-24: Heavy Load Switching
Waveforms.
FIGURE 2-25: Light Load Switc hi ng
Waveforms.
FIGURE 2-26: Start-up from V
IN
.
FIGURE 2-27: Start-up from EN.
FIGURE 2-28: Load Transient Response.
FIGURE 2-29: Line Transient Response.
V
IN
= 12V
V
OUT
=3.3V
I
OUT
= 300 mA
2µs/div
V
OUT
20 mV/div
AC coupled
IL
200 mA/div
SW
10V/div
V
IN
= 48V
V
OUT
=3.3V
I
OUT
=5mA
V
OUT
20 mV/div
AC coupled
IL
50 mA/div
SW
20V/div
10 µs/div
V
IN
= 36V
V
OUT
=3.3V
I
OUT
=200mA
V
OUT
1V/div
V
IN
20V/div
80 µs/div
V
OUT
1V/div
V
IN
= 12V
V
OUT
=3.3V
I
OUT
= 200 mA
80 µs/div
EN
2V/div
V
IN
= 12V
V
OUT
=3.3V
Load Step from
100 mA to 500 mA
V
OUT
50 mV/div
AC coupled
200 µs/div
I
OUT
200 mA/div
V
OUT
=3.3V
I
OUT
= 200 mA
Line Step from
5V to 24V
200 µs/div
V
OUT
100 mV/div
AC coupled
V
IN
10V/div
MCP16331
DS20005308C-page 10 2014-2016 Microchip Technology Inc.
3.0 PIN DE SCRIPTIONS
The descriptions of the pins are listed in Tabl e 3-1.
3.1 Switch Node (SW)
The switch node pin is connected internally to the
NMOS switch, and externally to the SW node consist-
ing of the inductor and Schottky diode. The external
Schottky diode should be connected close to the SW
node and GND.
3.2 Enable Pin (EN)
The EN pin is a logic-level input used to enable or
disable the device switching and lower the quiescent
current while disabled. By default the MCP16331 is
enabled through an internal pull-up. To turn off the
device, the EN pin must be pulled low.
3.3 Ground Pin (GND)
The ground or return pin is used for circuit ground con-
nection. The length of the trace from the input cap return,
output cap return and GND pin should be made as short
as possible to minimize the noise on the GND pin.
3.4 Feedback Voltage Pin (VFB)
The V
FB
pin is used to provide output voltage regulation
by using a resistor divider. The V
FB
voltage will be 0.8V
typical with the output voltage in regulation.
3.5 Boost Pin (BOOST)
The supply for the floating high-side driver, used to turn
the integrated N-Channel MOSFET on and off, is
connected to the BOOST pin.
3.6 Power Supply Input Voltag e Pin
(V
IN)
Connect the input voltage source to V
IN
. The input
source should be decoupled to GND with a 4.7 µF-20 µF
capacitor, depending on the impedance of the source
and output current. The input capacitor provides current
for the switch node and a stable voltage source for the
internal device power. This capacitor should be
connected as close as possible to the V
IN
and GND pins.
3.7 Exposed Thermal Pad Pin (EP)
There is an internal electrical connection between the
EP and GND pin for the TDFN package.
TABLE 3-1: PIN FUNCTION TABLE
MCP16331 Symbol Description
TDFN SOT-23
1 6 SW Output switch node. Connects to the inductor, freewheeling diode and the
bootstrap capacitor.
2 4 EN Enable pin. There is an internal pull-up on the V
IN
. To turn the device off,
connect EN to GND.
3 — NC Not connected.
4 — NC Not connected.
5 2 GND Ground pin.
6 3 V
FB
Output voltage feedback pin. Connect V
FB
to an external resistor divider to set
the output voltage.
7 1 BOOST Boost voltage that drives the internal NMOS control switch. A bootstrap
capacitor is connected between the BOOST and SW pins.
8 5 V
IN
Input supply voltage pin for power and internal biasing.
9 — EP Exposed Thermal Pad
2014-2016 Microchip Technology Inc. DS20005308C-page 11
MCP16331
NOTES:
MCP16331
DS20005308C-page 12 2014-2016 Microchip Technology Inc.
4.0 DETAILED DESCRIPTION
4.1 Device Overview
The MCP16331 is a high input voltage step-down
regulator, capable of supplying 500 mA to a regulated
output voltage, from 2.0V to 24V. Internally, the trimmed
500 kHz oscillator provides a fixed frequency, while the
Peak Current-Mode control architecture varies the duty
cycle for output voltage regulation. An internal floating
driver is used to turn the high-side, integrated N-Channel
MOSFET on and off. The power for this driver is derived
from an external boost capacitor (C
BOOST
) whose
energy is supplied from a fixed voltage, ranging between
3.0V and 5.5V, typically the input or output voltage of the
converter. For applications with an output voltage out-
side of this range, 12V for example, the boost capacitor
bias can be derived from the output using a simple Zener
diode regulator.
4.1.1 INTERNAL REFERENCE VOLTAGE
(V
REF
)
An integrated precise 0.8V reference, combined with an
external resistor divider, sets the desired converter out-
put voltage. The resistor divider range can vary without
affecting the control system gain. High-value resistors
consume less current, but are more susceptible to noise.
4.1.2 INTERNAL COMPENSATION
All control system components necessary for stable
operation over the entire device operating range are
integrated, including the error amplifier and inductor
current slope compensation. To add the proper amount
of slope compensation, the inductor value changes
along with the output voltage (see Tabl e 5-1).
4.1.3 EXTERNAL COMPONENTS
External components consist of:
• Input capacitor
• Output filter (inductor and capacitor)
• Freewheeling diode
• Boost capacitor
• Boost blocking diode
• Resistor divider
The selection of the external inductor, output capacitor,
input capacitor and freewheeling diode is dependent
upon the output voltage, input voltage, and the
maximum output current.
4.1.4 ENABLE INPUT
The enable input is used to disable the device while
connected to GND. If disabled, the MCP16331 device
consumes a minimal current from the input.
4.1.5 SOFT START
The internal reference voltage rate of rise is controlled
during start-up, minimizing the output voltage
overshoot and the inrush current.
4.1.6 UNDERVOLTAGE LOCKOUT
An integrated Undervoltage Lockout (UVLO) prevents
the converter from starting until the input voltage is high
enough for normal operation. The converter will typically
start at 4.1V and operate down to 3.6V. Hysteresis is
added to prevent starting and stopping, during start-up,
as a result of loading the input voltage source.
4.1.7 OVERTEMPERATURE
PROTECTION
Overtemperature protection limits the silicon die
temperature to +160°C by turning the converter off. The
normal switching resumes at +130°C.
2014-2016 Microchip Technology Inc. DS20005308C-page 13
MCP16331
FIGURE 4-1: MCP16331 Bloc k Diag ra m.
4.2 Functional Descrip tion
4.2.1 STEP-DOWN OR BUCK CONVERTER
The MCP16331 is a non-synchronous, step-down or buck
converter capable of stepping input voltages, ranging
from 4.4V to 50V, down to 2.0V to 24V for V
IN
> V
OUT
.
The integrated high-side switch is used to chop or
modulate the input voltage using a controlled duty cycle
for output voltage regulation. High efficiency is
achieved by using a low-resistance switch, low forward
drop diode, low Equivalent Series Resistance (ESR),
inductor and capacitor. When the switch is turned on, a
DC voltage is applied across the inductor (V
IN
– V
OUT
),
resulting in a positive linear ramp of inductor current.
When the switch turns off, the applied inductor voltage
is equal to -V
OUT
, resulting in a negative linear ramp of
inductor current (ignoring the forward drop of the
Schottky diode).
For steady-state, continuous inductor current opera-
tion, the positive inductor current ramp must equal the
negative current ramp in magnitude. While operating in
steady state, the switch duty cycle must be equal to the
relationship of V
OUT
/V
IN
for constant output voltage
regulation, under the condition that the inductor current
is continuous or never reaches zero. For discontinuous
inductor current operation, the steady-state duty cycle
will be less than V
OUT
/V
IN
to maintain voltage regula-
tion. The average of the chopped input voltage or SW
node voltage is equal to the output voltage, while the
average of the inductor current is equal to the output
current.
Schottky
Diode C
OUT
C
BOOST
Slope
Comp
PWM
Latch
+
–
Overtemp
Precharge
R
Comp
Amp
+
–
C
COMP
R
COMP
HS
Drive
CS
V
REG
BG
REF
SS
V
REF
Overtemperature
Boost
Precharge
Charge
500 kHz Osc
S
V
OUT
V
OUT
R
SENSE
GND
Boost
V
IN
EN
R
TOP
R
BOT
BOOST
SW
GND
FB
V
REF
SHDN All Blocks
+
–
C
IN
+
+
Note: EN has an internal pull-up, so the device will start even if the EN pin is left floating.
Diode
MCP16331
DS20005308C-page 14 2014-2016 Microchip Technology Inc.
FIGURE 4-2: Step-Down Converter.
4.2.2 PEAK CURRENT MODE CONTROL
The MCP16331 integrates a Peak Current-Mode control
architecture, resulting in superior AC regulation while
minimizing the number of voltage loop compensation
components and their size for integration. Peak Current-
Mode control takes a small portion of the inductor
current, replicates it and compares this replicated
current sense signal with the output of the integrated
error voltage. In practice, the inductor current and the
internal switch current are equal during the switch-on
time. By adding this peak current sense to the system
control, the step-down power train system is reduced
from a 2
nd
order to a 1
st
order. This reduces the system
complexity and increases its dynamic performance.
For Pulse-Width Modulation (PWM) duty cycles that
exceed 50%, the control system can become bimodal,
where a wide pulse, followed by a short pulse, repeats
instead of the desired fixed pulse width. To prevent this
mode of operation, an internal compensating ramp is
summed into the current shown in Figure 4-2.
4.2.3 PULSE-WIDTH MODULATION (PWM)
The internal oscillator periodically starts the switching
period, which in the MCP16331 device’s case, occurs
every 2 µs or 500 kHz. With the integrated switch turned
on, the inductor current ramps up until the sum of the
current sense and slope compensation ramp exceeds
the integrated error amplifier output. The error amplifier
output slews up or down to increase or decrease the
inductor peak current feeding into the output LC filter. If
the regulated output voltage is lower than its target, the
error amplifier output rises. This results in an increase in
the inductor current to correct for error in the output volt-
age. The fixed frequency duty cycle is terminated when
the sensed inductor peak current, summed with the
internal slope compensation, exceeds the output voltage
of the error amplifier. The PWM latch is set by turning off
the internal switch and preventing it from turning on until
the beginning of the next cycle. An overtemperature
signal or boost cap undervoltage can also reset the
PWM latch to terminate the cycle.
When working close to the boundary conduction
threshold, a jitter on the SW node may occur, reflecting
in the output voltage. Although the low-frequency
output component is very small, it may be desirable to
completely eliminate this component. To achieve this,
different methods can be applied to reduce or
completely eliminate this component. In addition to a
very good layout, a capacitor in parallel with the top
feedback resistor, or an RC snubber between the SW
node and GND, can be added.
Typical values for the snubber are 680 pF and 430,
while the capacitor in parallel with the top feedback
resistor can use values from 10 pF to 47 pF. Using such
a snubber eliminates the ringing on the SW node, but
decreases the overall efficiency of the converter.
4.2.4 HIGH-SIDE DRIVE
The MCP16331 features an integrated high-side
N-Channel MOSFET for high-efficiency step-down
power conversion. An N-Channel MOSFET is used for
its low resistance and size (instead of a P-Channel
MOSFET). A gate drive voltage above the input is
necessary to turn on the high-side N-Channel. The
high-side drive voltage should be between 3.0V and
5.5V. The N-Channel source is connected to the induc-
tor and Schottky diode or switch node. When the switch
is off, the boost cap voltage is replenished, typically
from the output voltage for 3V to 5V output applica-
tions. A boost blocking diode is used to prevent current
flow from the boost cap back into the output during the
internal switch-on time.
Prior to start-up, the boost cap has no stored charge to
drive the switch. An internal regulator is used to “pre-
charge” the boost cap. Once precharged, the switch is
turned on and the inductor current flows. When the
switch turns off, the inductor current freewheels through
the Schottky diode, providing a path to recharge the
boost cap. Worst-case conditions for recharge occur
when the switch turns on for a very short duty cycle at
light load, limiting the inductor current ramp. In this case,
there is a small amount of time for the boost capacitor to
recharge. For high input voltages there is enough
precharge current to replace the boost cap charge. For
input voltages above 5.5V typical, the MCP16331 device
will regulate the output voltage with no load. After start-
ing, the MCP16331 will regulate the output voltage until
the input voltage decreases below 4V. See Figure 2-23
for device range of operation over input voltage, output
voltage and load.
Schottky
Diode
C
OUT
V
OUT
SW
V
IN
+
–
SW
on off on on
off
I
L
I
L
L
I
OUT
V
OUT
V
IN
0
SW
on off on on
off
I
L
I
OUT
V
IN
0
Continuous Inductor Current Mode
Discontinuous Inductor Current Mode
2014-2016 Microchip Technology Inc. DS20005308C-page 15
MCP16331
4.2.5 ALTERNATIVE BOOST BIAS
For 3.0V to 5.0V output voltage applications, the boost
supply is typically the output voltage. For applications
with V
OUT
< 3.0V or V
OUT
> 5.0V, an alternative boost
supply can be used.
Alternative boost supplies can be from the input, input
derived, output derived or an auxiliary system voltage.
For low-voltage output applications with unregulated
input voltage, a shunt regulator derived from the input
can be used to derive the boost supply. For applications
with high output voltage or regulated high input voltage,
a series regulator can be used to derive the boost
supply. In case the boost is biased from an external
source while in shutdown, the device will draw slightly
higher current.
FIGURE 4-3: Shunt and External Boost Supply.
C
B
V
OUT
V
IN
C
IN
C
OUT
SW
BOOST
GND
EN
FB
L
R
TOP
V
IN
Boost Diode
FW Diode
2V
12V
VZ = 5.1V
C1
R
SH
C
B
V
OUT
V
IN
C
IN
C
OUT
SW
BOOST
GND
EN
FB
L
R
TOP
R
BOT
V
IN
Boost Diode
FW Diode
2V
12V
3.0V to 5.5V External Supply
R
BOT
MCP16331
MCP16331
MCP16331
DS20005308C-page 16 2014-2016 Microchip Technology Inc.
Shunt boost supply regulation is used for low output
voltage converters operating from a wide ranging input
source. A regulated 3.0V to 5.5V supply is needed to
provide high-side drive bias. The shunt uses a Zener
diode to clamp the voltage within the 3.0V to 5.5V
range using the resistance shown in Figure 4-3.
To calculate the shunt resistance, the boost drive
current can be estimated using Equation 4-1.
I
BOOST_TYP
for 3.3V Boost Supply = 0.6 mA
I
BOOST_TYP
for 5.0V Boost Supply = 0.8 mA.
EQUATION 4-1: BOOST CURRENT
To calculate the shunt resistance, the maximum I
BOOST
and I
Z
current are used at the minimum input voltage
(Equation 4-2).
EQUATION 4-2: SHUNT RESISTANCE
V
Z
and I
Z
can be found on the Zener diode
manufacturer’s data sheet. Typically, I
Z
= 1 mA.
Series regulator applications use a Zener diode to drop
the excess voltage. The series regulator bias source
can be input or output voltage derived, as shown in
Figure 4-4. The boost supply must remain between
3.0V and 5.5V at all times for proper circuit operation.
FIGURE 4-4: Series Regulator Boost Supply.
I
BOOST
I
BOOST_TYP
1.5
mA=
R
SH
V
INMIN
V
Z
–
I
Boost
I
Z
+
------------------------------=
C
B
V
OUT
V
IN
C
IN
C
OUT
SW
BOOST
GND
EN
FB
L
R
TOP
R
BOT
V
IN
Boost Diode
FW Diode
12V
15V to 50V
C
B
V
IN
C
IN
SW
BOOST
GND
EN
FB
L
V
IN
Boost Diode
FW Diode
2V
12V
VZ = 7.5V
VZ = 7.5V
V
OUT
R
TOP
R
BOT
C
OUT
MCP16331
MCP16331
2014-2016 Microchip Technology Inc. DS20005308C-page 17
MCP16331
5.0 APPLICATION INFORMATION
5.1 Typical Applications
The MCP16331 step-down converter operates over a
wide input voltage range, up to 50V maximum. Typical
applications include generating a bias or V
DD
voltage for
the PIC
®
microcontroller product line, digital control sys-
tem bias supply for AC-DC converters, 24V industrial
input and similar applications.
5.2 Adjustable Output Voltage
Calculations
To calculate the resistor divider values for the
MCP16331, Equation 5-1 can be used. R
TOP
is
connected to V
OUT
, R
BOT
is connected to GND and
both are connected to the V
FB
input pin.
EQUATION 5- 1:
EXAMPL E 5-1:
EXAMPL E 5-2:
The transconductance error amplifier gain is controlled
by its internal impedance. The external divider resistors
have no effect on system gain so a wide range of values
can be used. A 10 k resistor is recommended as a
good trade-off for quiescent current and noise immunity.
5.3 General Design Equations
The step-down converter duty cycle can be estimated
using Equation 5-2 while operating in Continuous
Inductor Current-Mode. This equation also counts the
forward drop of the freewheeling diode and internal
N-Channel MOSFET switch voltage drop. As the load
current increases, the switch voltage drop and diode
voltage drop increase, requiring a larger PWM duty
cycle to maintain the output voltage regulation. Switch
voltage drop is estimated by multiplying the switch
current times the switch resistance or R
DSON
.
EQUATION 5-2: CONTINUOUS INDUCTOR
CURRENT DUTY CYCLE
The MCP16331 device features an integrated slope
compensation to prevent the bimodal operation of the
PWM duty cycle. Internally, half of the inductor current
downslope is summed with the internal current sense
signal. For the proper amount of slope compensation,
it is recommended to keep the inductor downslope
current constant by varying the inductance with V
OUT
,
where K = 0.22V/µH.
EQUATION 5-3:
R
TOP
R
BOT
V
OUT
V
FB
-------------1–
=
V
OUT
=3.3V
V
FB
=0.8V
R
BOT
=10 k
R
TOP
= 31.25 k (standard value = 31.6 k)
V
OUT
= 3.328V (using standard value)
V
OUT
=5.0V
V
FB
=0.8V
R
BOT
=10 k
R
TOP
= 52.5 k (standard value = 52.3 k)
V
OUT
= 4.98V (using standard value)
TABLE 5-1: RECOMMENDED INDUCTOR
VALUES
V
OUT
K L
STANDARD
2.0V 0.20 10 µH
3.3V 0.22 15 µH
5.0V 0.23 22 µH
12V 0.21 56 µH
15V 0.22 68 µH
24V 0.24 100 µH
DV
OUT
V
Diode
+
V
IN
I
SW
R
DSON
–
-------------------------------------------------------=
KV
OUT
L
=
MCP16331
DS20005308C-page 18 2014-2016 Microchip Technology Inc.
5.4 Input Capacit or Selection
The step-down converter input capacitor must filter the
high input ripple current as a result of pulsing or chopping
the input voltage. The MCP16331 input voltage pin is
used to supply voltage for the power train and as a
source for internal bias. A low Equivalent Series
Resistance (ESR), preferably a ceramic capacitor, is rec-
ommended. The necessary capacitance is dependent
upon the maximum load current and source impedance.
Three capacitor parameters to keep in mind are the
voltage rating, Equivalent Series Resistance and the
temperature rating. For wide temperature range applica-
tions, a multilayer X7R dielectric is mandatory, while for
applications with limited temperature range, a multilayer
X5R dielectric is acceptable. Typically, input capaci-
tance between 4.7 µF and 20 µF is sufficient for most
applications.
The input capacitor voltage rating should be a minimum
of V
IN
plus margin. Ta bl e 5-2 contains the recommended
range for the input capacitor value.
5.5 Output Capacit or Selection
The output capacitor helps in providing a stable output
voltage during sudden load transients and reduces the
output voltage ripple. As with the input capacitor, X5R
and X7R ceramic capacitors are well suited for this
application.
The amount and type of output capacitance, and Equiv-
alent Series Resistance will have a significant effect on
the output ripple voltage and system stability. The
range of the output capacitance is limited due to the
integrated compensation of the MCP16331.
The output voltage capacitor voltage rating should be a
minimum of V
OUT
plus margin.
Table 5-2 contains the recommended range for the
input and output capacitor value:
5.6 Inductor Selection
The MCP16331 is designed to be used with small
surface mount inductors. Several specifications should
be considered prior to selecting an inductor. To
optimize system performance, the inductance value is
determined by the output voltage (Ta b l e 5-1), so the
inductor ripple current is somewhat constant over the
output voltage range.
EQUATION 5-4: INDUCTOR RIPPLE
CURRENT
EXAMPL E 5-3:
EQUATION 5-5: INDUCTOR PEAK
CURRENT
For the example above, an inductor saturation rating of a
minimum 660 mA is recommended. Low DCR inductors
result in higher system efficiency. A trade-off between
size, cost and efficiency is made to achieve the desired
results.
TABLE 5-2: CAPACITOR VALUE RANGE
Parameter Min. Max.
C
IN
4.7 µF None
C
OUT
20 µF —
I
L
V
IN
V
OUT
–
L
----------------------------t
ON
=
V
IN
=12V
V
OUT
=3.3V
I
OUT
=500 mA
I
LPK
I
L
2
-------- I
OUT
+=
Inductor Ripple Current = 319 mA
Inductor Peak Current = 660 mA
2014-2016 Microchip Technology Inc. DS20005308C-page 19
MCP16331
TABLE 5-3: MCP16331 RECOMMENDED
3.3V INDUCTORS
Part Number
Value
(µH)
DCR ()
I
SAT
(A)
Size
WxLxH
(mm)
Coilcraft
®
ME3220-153 15 0.52 0.90 3.2x2.5x2.0
LPS4414-153 15 0.440 0.92 4.4x4.4x1.4
LPS6235-153 15 0.125 2.00 6.2x6.2x3.5
MSS6132-153 15 0.106 1.56 6.1x6.1x3.2
MSS7341-153 15 0.055 1.78 6.6x6.6x4.1
LPS3015-153 15 0.700 0.62 3.0x3.0x1.5
Wurth Elektronik
®
744025150 15 0.400 0.900 2.8x2.8x2.8
744042150 15 0.22 0.75 4.8x4.8x1.8
7447779115 15 0.081 2.2 7.3x7.3x4.5
Coiltronics
®
SD12-150R 15 0.408 0.692 5.2x5.2x1.2
SD3118-150-R 15 0.44 0.75 3.2x3.2x1.8
SD52-150-R 15 0.161 0.88 5.2x5.5.2.0
Sumida
®
CDPH4D19FNP
-150MC
15 0.075 0.66 5.2x5.2x2.0
CDRH3D16/
HPNP-150MC
15 0.410 0.65 4.0x4.0x1.8
TDK - EPCOS
®
B82462G4153M 15 0.097 1.05 6.3x6.3x3
TABLE 5-4: MCP16331 RECOMMENDED
5V INDUCTORS
Part Number
Value
(µH)
DCR ()
I
SAT
(A)
Size
WxLxH
(mm)
Coilcraft
®
ME3220-223 22 0.787 0.71 3.2x2.5x2.0
LPS4414-223 22 0.59 0.74 4.4x4.4x1.4
LPS6235-223 22 0.145 1.7 6.2x6.2x3.5
MSS6132-223 22 0.158 1.22 6.1x6.1x3.2
MSS7341-223 22 0.082 1.42 6.6x6.6x4.1
LPS3015-223 22 0.825 0.5 3.0x3.0x1.5
Wurth Elektronik
®
744025220 22 0.575 0.75 2.8x2.8x2.8
744042220 22 0.3 0.6 4.8x4.8x1.8
7447779122 22 0.11 1.7 7.3x7.3x4.5
Cooper Bussman
®
SD12-220-R 22 0.633 0.574 5.2x5.2x1.2
SD3118-220-R 22 0.676 0.61 3.2x3.2x1.8
SD52-220-R 22 0.204 0.73 5.2x5.2x2
Sumida
®
CDPH4D19FNP
-220MC
22 0.135 0.54 5.2x5.2x2
CDRH3D16/
HPNP-220MC
22 0.61 0.55 4.0x4.0x1.8
TDK - EPCOS
®
82462G4223M 22 0.15 0.85 6.3x6.3x3
MCP16331
DS20005308C-page 20 2014-2016 Microchip Technology Inc.
5.7 Freewheeling Diode
The freewheeling diode creates a path for inductor
current flow after the internal switch is turned off. The
average diode current is dependent upon the output
load current at duty cycle (D). The efficiency of the con-
verter is a function of the forward drop and speed of the
freewheeling diode. A low forward drop Schottky diode
is recommended. The current rating and voltage rating
of the diode is application-dependent. The diode
voltage rating should be a minimum of V
IN
plus margin.
The average diode current can be calculated using
Equation 5-6.
EQUATION 5-6: DIODE AVERAGE
CURRENT
EXAMPL E 5-4:
A 0.5A to 1A diode is recommended.
5.8 Boost Diode
The boost diode is used to provide a charging path from
the low-voltage gate drive source while the switch node
is low. The boost diode blocks the high voltage of the
switch node from feeding back into the output voltage
when the switch is turned on, forcing the switch node
high.
A standard 1N4148 ultra-fast diode is recommended
for its recovery speed, high voltage blocking capability,
availability and cost. The voltage rating required for the
boost diode is V
IN
.
For low boost voltage applications, a small Schottky
diode with the appropriately rated voltage can be used
to lower the forward drop, increasing the boost supply
for the gate drive.
5.9 Boost Capacitor
The boost capacitor is used to supply current for the
internal high-side drive circuitry that is above the input
voltage. The boost capacitor must store enough energy
to completely drive the high-side switch on and off. A
0.1 µF X5R or X7R capacitor is recommended for all
applications. The boost capacitor maximum voltage is
5.5V, so a 6.3V or 10V rated capacitor is recommended.
5.10 Thermal Calculations
The MCP16331 is available in the 6-lead SOT-23 and
8-lead TDFN packages. By calculating the power dissi-
pation and applying the package thermal resistance
(
JA
), the junction temperature is estimated.
To quickly estimate the internal power dissipation for
the switching step-down regulator, an empirical calcu-
lation using measured efficiency can be used. Given
the measured efficiency, the internal power dissipation
is estimated by Equation 5-7. This power dissipation
includes all internal and external component losses.
For a quick internal estimate, subtract the estimated
Schottky diode loss and inductor DCR loss from the
P
DIS
calculation in Equation 5-7.
EQUATION 5-7: TOTAL POWER
DISSIPATION ESTIMATE
The difference between the first term, input power and
the second term, power delivered, is the total system
power dissipation. The freewheeling Schottky diode
losses are determined by calculating the average diode
current and multiplying by the diode forward drop. The
inductor losses are estimated by P
L
= I
OUT2
x L
DCR
.
EQUATION 5-8: DIODE POWER
DISSIPATION ESTIMATE
TABLE 5-5: FREEWHEELING DIODES
App Mfr. Part
Number Rating
12 V
IN
, 500 mA Diodes Inc. DFLS120L-7 20V, 1A
24 V
IN
, 100 mA Diodes Inc. B0540Ws-7 40V, 0.5A
18 V
IN
, 500 mA Diodes Inc. B130L-13-F 30V, 1A
48 V
IN
, 500 mA Diodes Inc. B1100 100V, 1A
I
DAVG
1D–I
OUT
=
I
OUT
=0.5A
V
IN
=15V
V
OUT
=5V
D = 5/15
I
DAVG
=333 mA
V
OUT
I
OUT
Efficiency
-------------------------------
V
OUT
I
OUT
–P
Dis
=
P
Diode
V
F
1D–I
OUT
=
2014-2016 Microchip Technology Inc. DS20005308C-page 21
MCP16331
EXAMPL E 5-5:
5.11 PCB Layout Information
Good printed circuit board layout techniques are
important to any switching circuitry and switching
power supplies are no different. When wiring the
switching high-current paths, short and wide traces
should be used. Therefore, it is important that the input
and output capacitors be placed as close as possible to
the MCP16331 to minimize the loop area.
The feedback resistors and feedback signal should be
routed away from the switching node, and the switching
current loop. When possible, ground planes and traces
should be used to help shield the feedback signal and
minimize noise and magnetic interference.
A good MCP16331 layout starts with C
IN
placement. C
IN
supplies current to the input of the circuit when the switch
is turned on. In addition to supplying high-frequency
switch current, C
IN
also provides a stable voltage source
for the internal MCP16331 circuitry. Unstable PWM
operation can result if there are excessive transients or
ringing on the V
IN
pin of the MCP16331 device. In
Figure 5-1, C
IN
is placed close to pin 5. A ground plane
on the bottom of the board provides a low resistive and
inductive path for the return current. The next priority in
placement is the freewheeling current loop formed by D1,
C
OUT
and L, while strategically placing the C
OUT
return
close to the C
IN
return. Next, the boost capacitor should
be placed between the boost pin and the switch node pin,
SW. This leaves space close to the MCP16331 V
FB
pin
to place R
TOP
and R
BOT
. R
TOP
and R
BOT
are routed
away from the switch node so noise is not coupled into
the high-impedance V
FB
input.
V
IN
=10V
V
OUT
=5.0V
I
OUT
=0.4A
Efficiency = 90%
Total System Dissipation = 222 mW
L
DCR
=0.15
P
L
=24 mW
Diode V
F
=0.50
D=50%
P
Diode
= 125 mW
MCP16331 internal power dissipation estimate:
P
DIS
- P
L
- P
DIODE
= 73 mW
JA
=198°C/W
Estimated Junction
Temperature Rise
= +14.5°C
MCP16331
DS20005308C-page 22 2014-2016 Microchip Technology Inc.
FIGURE 5-1: MCP16331 SO T-23-6 Recomm en ded Layout, 500 mA Design.
Bottom Plane is GND
R
BOT
R
TOP
10
V
OUT
V
IN
2xC
IN
C
B
D
B
1
GND
GND
L
D1
C
OUT
C
OUT
Bottom Trace
MCP16331
C
B
V
IN
C
OUT
SW
BOOST
GND
EN
FB
L
D
B
D1
3.3V
4V to 50V
10
V
OUT
R
TOP
R
BOT
1
6
3
2
5
4
V
IN
C
IN
MCP16331
Component Value
C
IN
2 x 10 µF
C
OUT
2 x 10 µF
L 15 µH
R
TOP
31.2 k
R
BOT
10 k
D1 B1100
D
B
1N4148
C
B
100 nF
Note: A 10 resistor is used with a network analyzer to measure system gain and phase.
2014-2016 Microchip Technology Inc. DS20005308C-page 23
MCP16331
FIGURE 5-2: Compact MCP16331 SOT-23-6 D
2
Recommended Layout, Low-Current Design.
C
B
V
OUT
V
IN
C
OUT
SW
BOOST
GND
EN
FB
L
R
TOP
V
IN
D
B
D1
3.3V
4V to 50V
Component Value
C
IN
1 µF
C
OUT
10 µF
L 15 µH
R
TOP
31.2 k
R
BOT
10 k
D1 STPS0560Z
D
B
1N4148
C
B
100 nF
MCP16331
1
6
3
2
5
4
R
BOT
C
IN
GND
MCP16331
C
OUT
GND GND
D1
C
IN
D
B
R
TOP
R
BOT
C
B
V
OUT
Bottom Plane is GND
V
IN
MCP16331
DS20005308C-page 24 2014-2016 Microchip Technology Inc.
FIGURE 5-3: MCP16331 TDFN-8 Recommended Layout Design.
Component Value
C
IN
2x10 µF
C
OUT
2x10 µF
L 22 µH
R
TOP
31.2 k
R
BOT
10 k
D1 MBRS1100
D
B
1N4148WS
C
B
100 nF
C
TOP
20 pF
C
SNUB
430 pF
R
SNUB
680
C
IN
C
OUT
L
D1
R
BOT
R
TOP
MCP16331
C
SNUB
R
SNUB
C
B
D
B
V
IN
GND V
OUT
Note: Red represents top layer pads, and traces and blue represent bottom layer pads and traces. On the bottom
layer, a GND plane should be placed, which is not represented in the example above for visibility reasons.
C
B
V
OUT
V
IN
C
OUT
SW
BOOST
GND
EN
FB
L
V
IN
D
B
D1
3.3V
4V to 50V
MCP16331
7
1
6
5
8
2
R
BOT
C
IN
R
TOP
C
TOP
R
SNUB
C
SNUB
Optional
2014-2016 Microchip Technology Inc. DS20005308C-page 25
MCP16331
6.0 TYPICAL APPLICATION CIRCUITS
FIGURE 6-1: Typical Application, 50V V
IN
to 3.3V V
OUT
.
Component Value Manufacturer Part Number Comment
C
IN
2 x 10 µF TDK Corporation C5750X7S2A106M230KB Capacitor, 10 µF, 100V, X7S, 2220
C
OUT
2 x 10 µF Taiyo Yuden
Co., Ltd.
JMK212B7106KG-T Capacitor, 10 µF, 6.3V, Ceramic, X7R, 0805,
10%
L 15 µH Coilcraft
®
MSS6132-153ML MSS6132, 15 µH, Shielded Power Inductor
R
TOP
31.6 k
Panasonic
®
- ECG ERJ-3EKF3162V Resistor, 31.6 KΩ, 1/10W, 1%, 0603, SMD
R
BOT
10 k
Panasonic - ECG ERJ-3EKF1002V Resistor, 10.0 KΩ, 1/10W, 1%, 0603, SMD
FW Diode B1100 Diodes
Incorporated
®
B1100-13-F Schottky, 100V, 1A, SMA
Boost Diode 1N4148 Diodes
Incorporated
1N4148WS-7-F Diode Switch, 75V, 200 mW, SOD-323
C
B
100 nF AVX Corporation 0603YC104KAT2A Capacitor, 0.1 µF, 16V Ceramic, X7R,
0603, 10%
U1 MCP16331 Microchip
Technology Inc.
MCP16331-E/CH
MCP16331-E/MNY
MCP16331, 500 kHz Buck Switcher, 50V,
500 mA
C
B
V
OUT
V
IN
C
IN
C
OUT
SW
BOOST
GND
EN
FB
L
V
IN
Boost Diode
FW Diode
3.3V
4.5V to 50V
R
TOP
R
BOT
MCP16331
U1
MCP16331
DS20005308C-page 26 2014-2016 Microchip Technology Inc.
FIGURE 6-2: Typical Application, 15V-50V Input; 12V Output.
C
B
SW
BOOST
GND
EN
FB
L
Boost Diode
FW Diode
12V
15V to 50V
D
Z
C omp o nen t Value Manufacturer Part Num ber Comm ent
C
IN
2 x 10 µF TDK
Corporation
C5750X7S2A106M230KB Capacitor, 10 µF, 100V, X7S, 2220
C
OUT
2 x 10 µF Taiyo Yuden
Co., Ltd.
JMK212B7106KG-T Capacitor, Ceramic, 10 µF, 25V, X7R, 10%,
1206
L 56 µH Coilcraft
®
MSS7341-563ML MSS7341, 56 µH, Shielded Power Inductor
R
TOP
140 k
Panasonic
®
- ECG ERJ-3EKF3162V Resistor, 140 KΩ, 1/10W, 1%, 0603, SMD
R
BOT
10 k
Panasonic - ECG ERJ-3EKF1002V Resistor, 10.0 KΩ, 1/10W, 1%, 0603, SMD
FW Diode B1100 Diodes
Incorporated
®
B1100-13-F Diode Schottky, 100V, 1A, SMB
Boost Diode 1N4148 Diodes
Incorporated
1N4148WS-7-F Diode Switch, 75V, 200 mW, SOD-323
C
B
100 nF AVX
Corporation
0603YC104KAT2A Capacitor, 0.1 µF, 16V, Ceramic, X7R,
0603, 10%
D
Z
7.5V Zener Diodes
Incorporated
MMSZ5236BS-7-F Diode Zener, 7.5V, 200 mW, SOD-323
U1 MCP16331 Microchip
Technology Inc.
MCP16331-E/CH
MCP16331-E/MNY
MCP16331, 500 kHz Buck Switcher, 50V,
500 mA
MCP16331
V
OUT
V
IN
C
OUT
R
TOP
R
BOT
V
IN
C
IN
U1
2014-2016 Microchip Technology Inc. DS20005308C-page 27
MCP16331
FIGURE 6-3: Typical Application, 12V Input; 2V Output at 500 mA.
C
B
SW
BOOST
GND
EN
FB
L
V
IN
Boost Diode
FW Diode
2V
12V
D
Z
R
TOP
V
OUT
C
OUT
C
IN
V
IN
R
BOT
Component Value Manufacturer Part Number Comment
C
IN
2 x 10 µF Taiyo Yuden
Co., Ltd.
JMK212B7106KG-T Capacitor, Ceramic, 10 µF, 25V, X7R,
10%, 1206
C
OUT
22 µF Taiyo Yuden
Co., Ltd.
JMK316B7226ML-T Capacitor, Ceramic, 22 µF, 6.3V, X7R,
1206
L 10 µH Coilcraft
®
MSS4020-103ML 10 µH Shielded Power Inductor
R
TOP
15 k
Panasonic
®
- ECG ERJ-3EKF1502V Resistor, 15.0 KΩ, 1/10W, 1%, 0603, SMD
R
BOT
10 k
Panasonic - ECG ERJ-3EKF1002V Resistor, 10.0 KΩ, 1/10W, 1%, 0603, SMD
FW Diode PD3S Diodes Incorporated
®
PD3S120L-7 Diode Schottky, 1A, 20V, POWERDI323
Boost Diode 1N4148 Diodes Incorporated 1N4148WS-7-F Diode Switch, 75V, 200 mW, SOD-323
C
B
100 nF AVX Corporation 0603YC104KAT2A Capacitor, 0.1 µF, 16V, Ceramic, X7R,
0603, 10%
D
Z
7.5V
Zener
Diodes Incorporated MMSZ5236BS-7-F Diode Zener, 7.5V, 200 mW, SOD-323
U1 MCP16331 Microchip
Technology Inc.
MCP16331-E/CH
MCP16331-E/MNY
MCP16331, 500 kHz Buck Switcher, 50V,
500 mA
MCP16331
U1
MCP16331
DS20005308C-page 28 2014-2016 Microchip Technology Inc.
FIGURE 6-4: Typical Application, 10V to 16V V
IN
to 2.5V V
OUT
.
C
B
SW
BOOST
GND
EN
FB
L
Boost Diode
FW Diode
2.5V
10V to 16V
D
Z
C
Z
MCP16331
R
BOT
R
TOP
V
OUT
R
Z
V
IN
C
IN
V
IN
C
OUT
Component Value Manufacturer Part Number Com m ent
C
IN
2 x 10 µF Taiyo Yuden
Co., Ltd.
JMK212B7106KG-T Capacitor, Ceramic, 10 µF, 25V, X7R,
10%, 1206
C
OUT
22 µF Taiyo Yuden
Co., Ltd.
JMK316B7226ML-T Capacitor, Ceramic, 22 µF, 6.3V, X7R,
1206
L12 µHCoilcraft
®
LPS4414-123MLB LPS4414, 12 µH, Shielded Power Inductor
R
TOP
21.5 k
Panasonic
®
- ECG ERJ-3EKF2152V Resistor, 21.5 KΩ, 1/10W, 1%, 0603, SMD
R
BOT
10 k
Panasonic - ECG ERJ-3EKF1002V Resistor, 10.0 KΩ, 1/10W, 1%, 0603, SMD
FW Diode DFLS120 Diodes
Incorporated
®
DFLS120L-7 Diode Schottky, 20V, 1A, POWERDI123
Boost Diode 1N4148 Diodes
Incorporated
1N4148WS-7-F Diode Switch, 75V, 200 mW, SOD-323
C
B
100 nF AVX Corporation 0603YC104KAT2A Capacitor, 0.1 µF, 16V, Ceramic, X7R,
0603, 10%
D
Z
5.1V
Zener
Diodes
Incorporated
BZT52C5V1S Diode Zener, 5.1V, 200 mW, SOD-323
C
Z
1 µF Taiyo Yuden
Co., Ltd.
LMK107B7105KA-T Capacitor, Ceramic, 1.0 µF, 10V, X7R,
0603
R
Z
1 k
Panasonic - ECG ERJ-8ENF1001V Resistor, 1.00 kΩ, 1/4W, 1%, 1206, SMD
U1 MCP16331 Microchip
Technology Inc.
MCP16331-E/CH
MCP16331-E/MNY
MCP16331, 500 kHz Buck Switcher, 50V,
500 mA
U1
2014-2016 Microchip Technology Inc. DS20005308C-page 29
MCP16331
FIGURE 6-5: Typ i cal Applicati on, 4V to 50V V
IN
to 3.3V V
OUT
at 150 mA.
C
B
SW
BOOST
GND
EN
FB
L
V
IN
Boost Diode
FW Diode
3.3V
4V to 50V
R
TOP
V
OUT
V
IN
C
OUT
R
BOT
MCP16331
Com ponent Value Manufacturer Part Number Comment
C
IN
2 x 10 µF TDK Corporation C5750X7S2A106M230KB Capacitor, 10 µF, 100V, X7S, 2220
C
OUT
10 µF Taiyo Yuden JMK107BJ106MA-T Capacitor, Ceramic, 10 µF, 6.3V, X5R,
0603
L 15 µH Coilcraft
®
LPS3015-153MLB Inductor Power, 15 µH, 0.61A, SMD
R
TOP
31.6 k
Panasonic
®
- ECG ERJ-2RKF3162X Resistor, 31.6 KΩ, 1/10W, 1%, 0402, SMD
R
BOT
10 k
Panasonic - ECG ERJ-3EKF1002V Resistor, 10.0 KΩ, 1/10W, 1%, 0603, SMD
FW Diode BAT46WH NXP
Semiconductors
BAT46WH BAT46WH - Diode, Schottky, 100V,
0.25A, SOD123F
Boost Diode 1N4148 Diodes
Incorporated
®
1N4148WS-7-F Diode Switch, 75V, 200 mW, SOD-323
C
B
100 nF TDK Corporation C1005X5R0J104M Capacitor, Ceramic, 0.10 µF, 6.3V, X5R,
0402
U1 MCP16331 Microchip
Technology Inc.
MCP16331-E/CH
MCP16331-E/MNY
MCP16331, 500 kHz Buck Switcher,
50V, 500 mA
U1
C
IN
MCP16331
DS20005308C-page 30 2014-2016 Microchip Technology Inc.
7.0 NON-TYPICAL APPLICATION
CIRCUITS
For additional information, please refer to the Application
Note: AN2102 “Designing Applications with MCP16331
High-Input Voltage Buck Converter” (DS00002102),
which can be found on the www.microchip.com web site.
FIGURE 7-1: Inverting Buck-Boost Application, 9V-16V V
IN
to -5V V
OUT.
C o mponent Value Manufacturer Part Number Commen t
C
IN
2 x 10 µF TDK Corporation C3225X7R1H106M250AC Capacitor, Ceramic, 10 µF, 50V, 20%,
X7R, SMD, 1210
C
OUT
2 x 10 µF TDK Corporation C3216X7R1E106K160AB Capacitor, Ceramic, 10 µF, 25V, 10%,
X7R, SMD, 1206
L 22 µH Coilcraft
®
MSS1048-223MLC MSS1048-223MLC, 22 µH, Shielded
Power Inductor
R
TOP
52.3 k
Panasonic
®
- ECG ERJPA3F5232V Resistor, 52.3 KΩ, 1/10W, 1%, 0603, SMD
R
BOT
10 k
Panasonic - ECG ERJ-3EKF1002V Resistor, 10.0 KΩ, 1/10W, 1%, 0603, SMD
D STPS2L60A STMicroelectronics STPS2L60A Schottky, 60V, 2A, SMA
D
B
1N4148 Diodes
Incorporated
®
1N4148WS-7-F Diode Switch, 75V, 200 mW, SOD-323
C
B
100 nF AVX Corporation 0603YC104KAT2A Capacitor, 0.1 µF, 16V, Ceramic, X7R,
0603, 10%
U1 MCP16331 Microchip
Technology Inc.
MCP16331-E/CH
MCP16331-E/MNY
MCP16331, 500 kHz Buck Switcher, 50V,
500 mA
V
IN
EN
GND
SW
V
IN
9V-16V
V
OUT
-5V
C
OUT
2x10µF
C
IN
2x10µF
L
22 µH
52.3 k
10 k
R
T
R
B
MCP16331
2A, 60V
D
BST
1N4148
C
B
0.1 µF
FB
GND
U1
D
B
GND OFF
ON
2014-2016 Microchip Technology Inc. DS20005308C-page 31
MCP16331
FIGURE 7-2: Non-Inverting Buck-Boost Application, 4.5V-18V V
IN
to 12V V
OUT.
Component Value Manufacturer Part Number Comment
C
IN
2 x 10 µF TDK Corporation C3225X7R1H106M250AC Capacitor, Ceramic, 10 µF, 50V, 20%,
X7R, SMD, 1210
C
OUT
2 x 10 µF TDK Corporation C3216X7R1E106K160AB Capacitor, Ceramic, 10 µF, 25V, 10%,
X7R, SMD, 1206
L 56 µH Coilcraft
®
MSS1048-563MLC MSS1048-563MLC, 56 µH, Shielded
Power Inductor
R
TOP
140 k
Panasonic
®
- ECG ERJP03F1403V Resistor, 140 KΩ, 1/10W, 1%, 0603, SMD
R
BOT
10 k
Panasonic - ECG ERJ-3EKF1002V Resistor, 10.0 KΩ, 1/10W, 1%, 0603, SMD
R1 4.7
Panasonic - ECG ERJ-B3BF4R7V Resistor, TKF, 4.7R, 1%, 1/10W, SMD,
0805
D1, D2 STPS2L60A STMicroelectronics STPS2L60A Schottky, 60V, 2A, SMA
D3 1N4148 Diodes
Incorporated
®
1N4148WS-7-F Diode Switch, 75V, 200 mW, SOD-323
D
Z
7.5V Diodes
Incorporated
BZT52C7V5-7-F Zener Diode, 7.5V, 500 mW, SOD-123
C
B
100 nF AVX Corporation 0603YC104KAT2A Capacitor, 0.1 µF, 16V, Ceramic, X7R,
0603, 10%
Q1 FDN359AN Fairchild
Semiconductor
®
FDN359AN Transistor, FET N-CH, FDN359AN, 30V,
2.7A, 460 mW, SOT-23-3
U1 MCP16331 Microchip
Technology Inc.
MCP16331-E/CH
MCP16331-E/MNY
MCP16331, 500 kHz Buck Switcher,
50V, 500 mA
V
IN
EN
GND
SW
V
IN
4.5V-18V
V
OUT
12V
C
OUT
2x10µF
C
IN
2x10µF
L
56 µH
140 k
10 k
OFF
ON
R
T
R
B
MCP16331
2A, 60V
D1
BST
1N4148
C
B
0.1 µF
FB
D2
Q1
D3 DZ
7V5
R
1
4.7
U1
MCP16331
DS20005308C-page 32 2014-2016 Microchip Technology Inc.
FIGURE 7-3: Multiple Outputs Buck Converter 10V-40V Input Voltage
to 2x5V and 3.3V Output
Voltages.
(2)
Component Value Manufacturer Part Number Comment
C
IN
2 x 10 µF TDK Corporation C3225X7R1H106M250AC Capacitor, Ceramic, 10 µF, 50V, 20%,
X7R, SMD, 1210
C
OUT
, C1 10 µF TDK Corporation C3216X7R1E106K160AB Capacitor, Ceramic, 10 µF, 25V, 10%,
X7R, SMD, 1206
C2, C3 1 µF TDK Corporation CGA4J3X7R1E105K125AB Capacitor, Ceramic,1 µF, 25V, 10%, X7R,
SMD, 0805
L1 10 µH Wurth Elektronik
®
744874100 744874100, 10 µH, Shielded Coupled
Inductors
R
T
52.3 k
Panasonic
®
- ECG ERJPA3F5232V Resistor, 52.3 KΩ, 1/10W, 1%, 0603, SMD
R
B
10 k
Panasonic - ECG ERJ-3EKF1002V Resistor, 10.0 KΩ, 1/10W, 1%, 0603, SMD
D1 MBR0530 Fairchild
Semiconductor
®
MBR0530 Schottky Rectifier, 30V, 500 mA, SOD-123
D2 STPS2L60A STMicroelectronics STPS2L60A Schottky, 60V, 2A, SMA
D
B
1N4148 Diodes
Incorporated
®
1N4148WS-7-F Diode Switch, 75V, 200 mW, SOD-323
C
B
100 nF AVX Corporation 0603YC104KAT2A Capacitor, 0.1 µF, 16V, Ceramic, X7R,
0603, 10%
U1 MCP1755 Microchip
Technology Inc.
MCP1755S-3302E/DB MCP1755, 3.3V LDO, 300 mA, SOT-223-3
U2 MCP16331 Microchip
Technology Inc.
MCP16331-E/CH
MCP16331-E/MNY
MCP16331, 500 kHz Buck Switcher, 50V,
500 mA
V
IN
EN
GND
SW
V
IN
10V-40V
V
OUT
5V
C
OUT
2x10µF
C
IN
2x10µF
L1B
(1)
10 µH
52.3 k
10 k
OFFON
R
T
R
B
MCP16331
2A, 60V
D2
BST
1N4148
C
B
0.1 µF
FB
10 µH
L1A
(1)
D1
C
1
10 µF
C
3
1µF
C
2
1µF
V
OUT2S
3.3V
V
OUT1S
5V
SGND
SGND
Note 1:
L1A and L1B are mutually coupled.
2:
Please refer to the Application Note: AN2102 “Designing Applications with MCP16331 High-Input
Voltage Buck Converter” (DS00002102), which can be found on the www.microchip.com web site.
U1
U2
D
B
VIN VOUT
GND
MCP1755
2014-2016 Microchip Technology Inc. DS20005308C-page 33
MCP16331
8.0 PACKAGING INFORMATION
8.1 Package Marking Information
Legend:
XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC
®
designator for Matte Tin (Sn)
*
This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note
: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
6-Lead SOT-23 Example
XXNN
8-Lead TDFN (2x3x0.75 mm) Example
MF25
ACD
615
25
MCP16331
DS20005308C-page 34 2014-2016 Microchip Technology Inc.
B
A
0.15 C A-B
0.15 C D
0.20 C A-B D
2X
TOP VIEW
SIDE VIEW
END VIEW
0.10 C
Microchip Technology Drawing C04-028C (CH) Sheet 1 of 2
2X
6X
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note:
6-Lead Plastic Small Outline Transistor (CH, CHY) [SOT-23]
D
EE1
e
e1
6X b
E
2
E1
2
D
AA2
A1
L2
Ĭ
L
(L1)
R
R1
c
0.20 C A-B
2X
C
SEATING PLANE
GAUGE PLANE
2014-2016 Microchip Technology Inc. DS20005308C-page 35
MCP16331
Microchip Technology Drawing C04-028C (CH) Sheet 2 of 2
6-Lead Plastic Small Outline Transistor (CH, CHY) [SOT-23]
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note:
protrusions shall not exceed 0.25mm per side.
1.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
2.
Notes:
REF: Reference Dimension, usually without tolerance, for information purposes only.
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
Dimensioning and tolerancing per ASME Y14.5M
Foot Angle
Number of Leads
Pitch
Outside lead pitch
Overall Height
Molded Package Thickness
Standoff
Overall Width
Molded Package Width
Overall Length
Foot Length
Footprint
Lead Thickness
Lead Width
L1
φ
b
c
Dimension Limits
E
E1
D
L
e1
A
A2
A1
Units
N
e
0°
0.08
0.20 -
-
-
10°
0.26
0.51
MILLIMETERS
0.95 BSC
1.90 BSC
0.30
0.90
0.89
0.00
0.60 REF
2.90 BSC
0.45
2.80 BSC
1.60 BSC
1.15
-
-
MIN
6
NOM
1.45
1.30
0.15
0.60
MAX
Seating Plane to Gauge Plane L1 0.25 BSC
MCP16331
DS20005308C-page 36 2014-2016 Microchip Technology Inc.
RECOMMENDED LAND PATTERN
Microchip Technology Drawing No. C04-2028B (CH)
6-Lead Plastic Small Outline Transistor (CH, CHY) [SOT-23]
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note:
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
Dimension Limits
Contact Pad Length (X3)
Overall Width
Distance Between Pads
Contact Pad Width (X3)
Contact Pitch
Contact Pad Spacing
3.90
1.10
G
Z
Y
1.70
0.60
MAXMIN
C
X
E
Units
NOM
0.95 BSC
2.80
MILLIMETERS
Distance Between Pads GX 0.35
E
X
GX
Y
GC
Z
SILK SCREEN
G
2014-2016 Microchip Technology Inc. DS20005308C-page 37
MCP16331
B
A
0.15 C
0.15 C
0.10 C A B
0.05 C
(DATUM B)
(DATUM A)
C
SEATING
PLANE
NOTE 1
12
N
2X
TOP VIEW
SIDE VIEW
BOTTOM VIEW
NOTE 1
12
N
0.10 C A B
0.10 C A B
0.10 C
0.08 C
Microchip Technology Drawing No. C04-129-MN Rev E Sheet 1 of 2
2X
8X
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note:
8-Lead Plastic Dual Flat, No Lead Package (MN) – 2x3x0.8 mm Body [TDFN]
D
E
D2
E2
A
(A3)
A1
e
8X b
L
K
With 1.4x1.3 mm Exposed Pad (JEDEC Package type WDFN)
MCP16331
DS20005308C-page 38 2014-2016 Microchip Technology Inc.
Microchip Technology Drawing No. C04-129-MN Rev E Sheet 2 of 2
8-Lead Plastic Dual Flat, No Lead Package (MN) – 2x3x0.8 mm Body [TDFN]
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note:
NOM
MILLIMETERS
0.50 BSC
2.00 BSC
3.00 BSC
0.20 REF
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Contact-to-Exposed Pad
Contact Thickness
Exposed Pad Width
Exposed Pad Length
4. Dimensioning and tolerancing per ASME Y14.5M
3. Package is saw singulated
2. Package may have one or more exposed tie bars at ends.
Notes:
Contact Width
Overall Width
Overall Length
Contact Length
Standoff
Number of Pins
Overall Height
Pitch
K0.20
Units
N
e
A
Dimension Limits
D
A3
A1
b
D2
E2
E
L
0.20
1.35
1.25
0.25
0.00
0.70
MIN
--
0.25
0.30
1.30
1.40
1.35
0.30
0.45
1.45
8
0.75
0.02 0.05
0.80
MAX
With 1.4x1.3 mm Exposed Pad (JEDEC Package type WDFN)
2014-2016 Microchip Technology Inc. DS20005308C-page 39
MCP16331
RECOMMENDED LAND PATTERN
Dimension Limits
Units
Optional Center Pad Width
Optional Center Pad Length
Contact Pitch
Y2
X2
1.50
1.60
MILLIMETERS
0.50 BSC
MIN
E
MAX
Contact Pad Length (X8)
Contact Pad Width (X8)
Y1
X1
0.85
0.25
Microchip Technology Drawing No. C04-129-MN Rev. B
NOM
8-Lead Plastic Dual Flat, No Lead Package (MN) – 2x3x0.8 mm Body [TDFN]
12
8
CContact Pad Spacing 2.90
Thermal Via Diameter V
Thermal Via Pitch EV
0.30
1.00
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Notes:
Dimensioning and tolerancing per ASME Y14.5M
For best soldering results, thermal vias, if used, should be filled or tented to avoid solder loss during
reflow process
1.
2.
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note:
C
E
X1
Y1
Y2
X2
EV
EV
ØV
SILK SCREEN
With 1.4x1.3 mm Exposed Pad (JEDEC Package type WDFN)
MCP16331
DS20005308C-page 40 2014-2016 Microchip Technology Inc.
NOTES:
2014-2016 Microchip Technology Inc. DS20005308C-page 41
MCP16331
APPENDIX A: REVISION HISTORY
Revision C (December 2016)
The following is a list of modifications:
1. Updated
Section 6.0 “Typical Application
Circuits”
.
2. Added
Section 7.0 “Non-Typical Application
Circuits”
.
3. Minor typographical corrections.
Revision B (October 2014)
The following is a list of modifications:
1. Added edits to incorporate the AEC-Q100
qualification.
Revision A (June 2014)
• Original release of this document.
MCP16331
DS20005308C-page 42 2014-2016 Microchip Technology Inc.
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office
.
Device: MCP16331: High-Voltage Input Integrated Switch
Step-Down Regulator
MCP16331T: High-Voltage Input Integrated Switch
Step-Down Regulator (Tape and Reel)
Tape and Reel
Option: T = Tape and Reel(1)
Temperature Range: E = -40°C to +125°C
Package: CH = Plastic Small Outline Transistor, SOT-23, 6-Lead
MNY* = Plastic Dual Flat TDFN, 8-Lead
*Y = Nickel palladium gold manufacturing designator.
Only available on the TDFN package.
Note 1:
Tape and Reel identifier only appears in the
catalog part number description. This identi-
fier is used for ordering purposes and is not
printed on the device package. Check with
your Microchip Sales Office for package
availability with the Tape and Reel option.
Examples:
a) MCP16331T-E/CH: Tape and Reel,
Extended Temperature,
6-Lead SOT-23 package
b) MCP16331T-E/MNY: Tape and Reel,
Extended Temperature,
8-Lead TDFN package
PART NO. X/XX
PackageTemperature
Range
Device
[X]
(1)
Tape and Reel
Option
2014-2016 Microchip Technology Inc. DS20005308C-page 43
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate, AVR,
AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory,
CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, K
EE
L
OQ
,
K
EE
L
OQ
logo, Kleer, LANCheck, LINK MD, maXStylus,
maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip
Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST
Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
and other countries.
ClockWorks, The Embedded Control Solutions Company,
EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS,
mTouch, Precision Edge, and Quiet-Wire are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any
Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo,
CodeGuard, CryptoAuthentication, CryptoCompanion,
CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average
Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial
Programming, ICSP, Inter-Chip Connectivity, JitterBlocker,
KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF,
MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach,
Omniscient Code Generation, PICDEM, PICDEM.net, PICkit,
PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple
Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI,
SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC,
USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and
ZENA are trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated in
the U.S.A.
Silicon Storage Technology is a registered trademark of Microchip
Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip Technology
Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2014-2016, Microchip Technology Incorporated, All Rights
Reserved.
ISBN: 978-1-5224-1189-5
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microch ip rece iv ed ISO/T S -16 94 9:20 09 certifi cat i on for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC
®
MCUs and dsPI C
®
DSCs, KEELOQ
®
code hoppi ng
devices, Serial EEPROMs, microperiph erals, nonvolat ile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT S
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
DS20005308C-page 44 2014-2016 Microchip Technology Inc.
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11/07/16
