MCP16331 High-Voltage Input Integrated Switch Step-Down Regulator Features General Description * * * * * The MCP16331 is a highly integrated, high-efficiency, fixed frequency, step-down DC-DC converter in a popular 6-pin SOT-23 or 8-pin 2x3 TDFN package that operates from input voltage sources up to 50V. Integrated features include a high-side switch, fixed frequency Peak CurrentMode control, internal compensation, peak current limit and overtemperature protection. Minimal external components are necessary to develop a complete step-down DC-DC converter power supply. High converter efficiency is achieved by integrating the current-limited, low-resistance, high-speed N-Channel MOSFET and associated drive circuitry. High switching frequency minimizes the size of external filtering components, resulting in a small solution size. The MCP16331 can supply 500 mA of continuous current while regulating the output voltage from 2.0V to 24V. An integrated, high-performance Peak CurrentMode architecture keeps the output voltage tightly regulated, even during input voltage steps and output current transient conditions that are common in power systems. The EN input is used to turn the device on and off. While off, only a few A of current are consumed from the input for power shedding and load distribution applications. This pin is internally pulled up, so the device will start, even if the EN pin is left floating. Output voltage is set with an external resistor divider. The MCP16331 is offered in a space-saving 6-lead SOT-23 and 8-lead 2x3 TDFN surface mount package. * * * * * * * * * * * * * * Up to 96% Efficiency Input Voltage Range: 4.4V to 50V Output Voltage Range: 2.0V to 24V 2% Output Voltage Accuracy Qualification: AEC-Q100 Rev. G, Grade 1 (-40C to 125C) Integrated N-Channel Buck Switch: 600 m Minimum 500 mA Output Current Over All Input Voltage Ranges (see Figure 2-9 for Maximum Output Current vs. VIN) - Up to 1.2A output current at 3.3V and 5V VOUT, VIN > 12V, SOT-23 package at +25C ambient temperature - Up to 0.8A output current at 12V VOUT, VIN > 18V, SOT-23 package at +25C ambient temperature 500 kHz Fixed Frequency Adjustable Output Voltage Low Device Shutdown Current Peak Current Mode Control Internal Compensation Stable with Ceramic Capacitors Internal Soft Start Internal Pull-up on EN Cycle-by-Cycle Peak Current Limit Undervoltage Lockout (UVLO): 4.1V to Start; 3.6V to Stop Overtemperature Protection Available Package: 6-Lead SOT-23, 8-Lead 2x3 TDFN Applications * PIC(R) MCU/dsPIC(R) DSC Microcontroller Bias Supply * 48V, 24V and 12V Industrial Input DC-DC Conversion * Set-Top Boxes (STB) * DSL Cable Modems * Automotive * AC/DC Adapters * SLA Battery-Powered Devices * AC-DC Digital Control Power Source * Power Meters * Consumer * Medical and Health Care * Distributed Power Supplies 2014-2016 Microchip Technology Inc. Package Type MCP16331 6-Lead SOT-23 BOOST 1 6 SW GND 2 5 VIN VFB 3 4 EN MCP16331 8-Lead 2x3 TDFN* 8 VIN SW 1 EN 2 NC 3 NC 4 EP 9 7 BOOST 6 VFB 5 GND *Includes Exposed Thermal Pad (EP); see Table 3-1. DS20005308C-page 1 MCP16331 Typical Applications 1N4148 BOOST SW VIN 4.5V to 50V VIN CIN 2x10 F CBOOST 100 nF L1 15 H VOUT 3.3V at 500 mA 100V Schottky Diode EN COUT 2 X10 F 20 pF Optional 31.6 k VFB GND 10 k 1N4148 BOOST SW VIN 6.0V to 50V VOUT 5.0V at 500 mA COUT 2 X10 F 100V Schottky Diode 52.3 k VIN CIN 2x10 F CBOOST L1 100 nF 22 H EN 20 pF Optional VFB GND Note: 10 k EN has an internal pull-up, so the device will start even if the EN pin is left floating. 100 VOUT=5V 90 Efficiency (%) 80 VOUT=3.3V 70 60 50 40 30 20 10 VIN=12V 0 10 DS20005308C-page 2 100 Output Current (mA) 1000 2014-2016 Microchip Technology Inc. MCP16331 1.0 Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings VIN, SW ............................................................... -0.5V to 54V BOOST - GND ................................................... -0.5V to 60V BOOST - SW Voltage........................................ -0.5V to 6.0V VFB Voltage ........................................................ -0.5V to 6.0V EN Voltage ............................................. -0.5V to (VIN + 0.3V) Output Short-Circuit Current ................................. Continuous Power Dissipation ....................................... Internally Limited Storage Temperature ....................................-65C to +150C Ambient Temperature with Power Applied ......-40C to +125C Operating Junction Temperature...................-40C to +160C ESD Protection on All Pins: HBM..................................................................... 4 kV MM ......................................................................300V DC CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, TA = +25C, VIN = VEN = 12V, VBOOST - VSW = 3.3V, VOUT = 3.3V, IOUT = 100 mA, L = 15 H, COUT = CIN = 2 x 10 F X7R Ceramic Capacitors. Boldface specifications apply over the TA range of -40C to +125C. Parameters Input Voltage Feedback Voltage Sym. Min. Typ. Max. Units VIN 4.4 -- 50 V Conditions Note 1 VFB 0.784 0.800 0.816 V VOUT 2.0 -- 24 V Note 1, Note 3 Feedback Voltage Line Regulation |VFB/VFB)/VIN| -- 0.002 0.1 %/V VIN = 5V to 50V Feedback Voltage Load Regulation |VFB/VFB| -- 0.13 0.35 % IOUT = 50 mA to 500 mA IFB -- +/- 3 -- nA Undervoltage Lockout Start UVLOSTRT -- 4.1 4.4 V VIN rising Undervoltage Lockout Stop UVLOSTOP 3 3.6 -- V VIN falling Undervoltage Lockout Hysteresis UVLOHYS -- 0.5 -- V Switching Frequency fSW 425 500 550 kHz Maximum Duty Cycle DCMAX 90 93 -- % VIN = 5V; VFB = 0.7V; IOUT = 100 mA Output Voltage Adjust Range Feedback Input Bias Current Minimum Duty Cycle DCMIN -- 1 -- % Note 4 NMOS Switch-On Resistance RDS(ON) -- 0.6 -- VBOOST - VSW = 5V, Note 3 NMOS Switch Current Limit IN(MAX) -- 1.3 -- A VBOOST - VSW = 5V, Note 3 Quiescent Current IQ -- 1 1.7 mA VIN = 12V; Note 2 Quiescent Current - Shutdown IQ -- 6 10 A VOUT = EN = 0V IOUT 500 -- -- mA Note 1; see Figure 2-9 Output Current Note 1: 2: 3: 4: The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage necessary for regulation. See characterization graphs for typical input to output operating voltage range. VBOOST supply is derived from VOUT. Determined by characterization, not production tested. This is ensured by design. 2014-2016 Microchip Technology Inc. DS20005308C-page 3 MCP16331 DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, TA = +25C, VIN = VEN = 12V, VBOOST - VSW = 3.3V, VOUT = 3.3V, IOUT = 100 mA, L = 15 H, COUT = CIN = 2 x 10 F X7R Ceramic Capacitors. Boldface specifications apply over the TA range of -40C to +125C. Parameters Sym. Min. Typ. Max. Units VIH 1.9 -- -- V EN Input Logic High EN Input Logic Low Conditions VIL -- -- 0.4 V IENLK -- 0.007 0.5 A VIN = EN = 5V Soft Start Time tSS -- 600 -- s EN Low-to-high, 90% of VOUT Thermal Shutdown Die Temperature TSD -- 160 -- C Note 3 TSDHYS -- 30 -- C Note 3 EN Input Leakage Current Die Temperature Hysteresis Note 1: 2: 3: 4: The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage necessary for regulation. See characterization graphs for typical input to output operating voltage range. VBOOST supply is derived from VOUT. Determined by characterization, not production tested. This is ensured by design. TEMPERATURE SPECIFICATIONS Electrical Specifications Parameters Sym. Min. Typ. Max. Units Conditions Operating Junction Temperature Range TJ -40 -- +125 C Storage Temperature Range TA -65 -- +150 C Maximum Junction Temperature TJ -- -- +160 C Thermal Resistance, 6L-SOT-23 JA -- 190.5 -- C/W EIA/JESD51-3 Standard Thermal Resistance, 8L-2x3 TDFN JA -- 52.5 -- C/W EIA/JESD51-3 Standard Temperature Ranges Steady State Transient Package Thermal Resistances DS20005308C-page 4 2014-2016 Microchip Technology Inc. MCP16331 2.0 TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 x10 F, L = 15 H, VOUT = 3.3V, ILOAD = 100 mA, TA = +25C, 6-Lead SOT-23 package. 100 100 VIN = 6V 90 90 80 70 60 VIN = 12V VIN = 24V 50 40 30 20 10 0 VIN = 48V 70 Efficiency (%) Efficiency (%) 80 VIN = 48V 60 50 40 30 20 10 1 10 100 0 1000 1 IOUT (mA) FIGURE 2-1: IOUT. 1000 3.3V VOUT Efficiency vs. FIGURE 2-4: IOUT. 24V VOUT Efficiency vs. 100 90 90 VIN = 12V 80 70 VIN = 24V 60 50 VIN = 48V 40 Efficiency (%) 80 Efficiency (%) 100 IOUT (mA) 100 IOUT= 500 mA 70 60 IOUT= 100 mA 50 40 30 30 20 20 10 IOUT= 10 mA 10 0 1 10 100 0 1000 6 IOUT (mA) FIGURE 2-2: 5V VOUT Efficiency vs. IOUT. 100 100 90 90 80 80 VIN = 48V 70 VIN = 24V 60 50 40 10 10 100 1000 FIGURE 2-3: 12V VOUT Efficiency vs. IOUT. 2014-2016 Microchip Technology Inc. 26 30 VIN (V) 34 38 42 46 50 3.3V VOUT Efficiency vs. IOUT = 500 mA IOUT = 100 mA 40 20 IOUT (mA) 22 50 30 10 18 60 20 1 14 70 30 0 10 FIGURE 2-5: VIN. Efficiency (%) Efficiency (%) 10 IOUT = 10 mA 0 6 10 FIGURE 2-6: 14 18 22 26 30 VIN (V) 34 38 42 46 50 5V VOUT Efficiency vs. VIN. DS20005308C-page 5 MCP16331 Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 x10 F, L = 15 H, VOUT = 3.3V, ILOAD = 100 mA, TA = +25C, 6-Lead SOT-23 package. 100 0.83 IOUT = 500 mA 90 IOUT = 100 mA Feedback Voltage (V) Efficiency (%) 80 70 60 50 IOUT = 10 mA 40 30 20 0.82 0.81 0.8 VIN =12V VOUT = 3.3V IOUT = 100 mA 0.79 10 0.78 0 14 18 22 26 FIGURE 2-7: 30 34 VIN (V) 38 42 46 -40 -25 -10 5 50 12V VOUT Efficiency vs. VIN. FIGURE 2-10: 100 Peak Current Limit (A) IOUT = 100 mA 80 Efficiency (%) VFB vs. Temperature. 1.8 90 IOUT = 500 mA 70 60 IOUT = 10 mA 50 40 30 20 1.6 VOUT = 5V 1.4 1.2 VOUT = 3.3V 1 VOUT = 12V 0.8 0.6 0.4 0.2 10 0 0 26 30 34 FIGURE 2-8: 38 VIN (V) 42 46 -40 -25 -10 50 24V VOUT Efficiency vs. VIN. 1400 5 FIGURE 2-11: Temperature. 20 35 50 65 80 Temperature (C) 95 110 125 Peak Current Limit vs. 1.2 VOUT = 5V 1200 Switch RDSON () 1 VOUT = 3.3V 1000 IOUT (mA) 20 35 50 65 80 95 110 125 Temperature (C) 800 VOUT = 12V VOUT = 24V 600 400 0.8 0.6 0.4 VIN = 6V VOUT=VBOOST= 3.3V IOUT = 200 mA 0.2 200 0 0 6 10 14 18 FIGURE 2-9: DS20005308C-page 6 22 26 30 VIN (V) 34 38 42 Max IOUT vs. VIN. 46 50 -40 -25 -10 FIGURE 2-12: Temperature. 5 20 35 50 65 80 95 110 125 Temperature (C) Switch RDSON vs. 2014-2016 Microchip Technology Inc. MCP16331 Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 x10 F, L = 15 H, VOUT = 3.3V, ILOAD = 100 mA, TA = +25C, 6-Lead SOT-23 package. 0.8 3.295 Switch RDSON () 0.75 0.7 VIN = 6V VOUT= 3.3V VOUT(V) 0.65 VOUT = 3.3V IOUT=100 mA 3.29 0.6 3.285 3.28 0.55 0.5 3.275 0.45 3.27 0.4 2.5 3 3.5 4 VBOOST (V) FIGURE 2-13: 4.5 5 5 5.5 Switch RDSON vs. VBOOST. 20 25 VIN(V) 30 35 40 45 50 VOUT vs. VIN. 1.2 4.6 No Load Input Current (mA) Input Voltage (V) 15 FIGURE 2-16: 5 VIN = 12V VOUT = 3.3V 1.1 UVLO START 4.2 3.8 UVLO STOP 3.4 1 0.9 0.8 3 -40 -25 -10 5 FIGURE 2-14: Temperature. -40 -25 -10 20 35 50 65 80 95 110 125 Temperature (C) Undervoltage Lockout vs. 7 1.3 1.2 UP 1.1 DOWN 1 6.5 Shutdown Current (A) VIN = 12V VOUT = 3.3V IOUT = 100 mA 5 FIGURE 2-17: Temperature. 1.4 Enable Voltage (V) 10 20 35 50 65 80 Temperature (C) 95 110 125 Input Quiescent Current vs. VIN = 12V VOUT = 3.3V 6 5.5 5 4.5 4 0.9 -40 -25 -10 FIGURE 2-15: Temperature. 5 20 35 50 65 80 95 110 125 Temperature (C) EN Threshold Voltage vs. 2014-2016 Microchip Technology Inc. -40 -25 -10 FIGURE 2-18: Temperature. 5 20 35 50 65 80 Temperature (C) 95 110 125 Shutdown Current vs. DS20005308C-page 7 MCP16331 Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 x10 F, L = 15 H, VOUT = 3.3V, ILOAD = 100 mA, TA = +25C, 6-Lead SOT-23 package. Switching Frequency (kHz) 525 1.9 VOUT = 3.3V No Load Input Current (mA) 1.7 1.5 1.3 1.1 0.9 0.7 0.5 5 10 15 FIGURE 2-19: VIN. 20 25 30 VIN (V) 35 40 45 475 VIN = 12V VOUT = 3.3V IOUT = 200 mA 450 50 Input Quiescent Current vs. 500 -40 -25 -10 FIGURE 2-22: Temperature. 5 20 35 50 65 80 95 110 125 Temperature (C) Switching Frequency vs. 4.3 18 VOUT=3.3V 15 To Start 4.1 VIN (V) Shutdown Current (A) VOUT = 3.3V 12 3.9 9 To Stop 3.7 6 3 3.5 5 10 15 FIGURE 2-20: 20 25 30 VIN (V) 35 40 45 50 Shutdown Current vs. VIN. 0 0.1 FIGURE 2-23: Output Current. 0.2 0.3 Output Current (A) 0.4 0.5 Minimum Input Voltage vs. Output Current (mA) 20 15 VOUT = 3.3V 10 VOUT = 5V 5 0 5 10 15 20 25 30 VIN (V) 35 40 45 50 FIGURE 2-21: PWM/Skipping IOUT Threshold vs. VIN. DS20005308C-page 8 2014-2016 Microchip Technology Inc. MCP16331 Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 x10 F, L = 15 H, VOUT = 3.3V, ILOAD = 100 mA, TA = +25C, 6-Lead SOT-23 package. VIN = 12V VOUT = 3.3V IOUT = 300 mA VOUT 20 mV/div AC coupled VIN = 12V VOUT = 3.3V IOUT = 200 mA VOUT 1V/div IL 200 mA/div EN 2V/div SW 10V/div 2 s/div FIGURE 2-24: Waveforms. 80 s/div Heavy Load Switching VIN = 48V VOUT = 3.3V IOUT = 5 mA VOUT 20 mV/div AC coupled FIGURE 2-27: Start-up from EN. VIN = 12V VOUT = 3.3V IOUT 200 mA/div Load Step from 100 mA to 500 mA IL 50 mA/div SW 20V/div VOUT 50 mV/div AC coupled 10 s/div FIGURE 2-25: Waveforms. 200 s/div Light Load Switching FIGURE 2-28: VOUT = 3.3V IOUT = 200 mA VIN = 36V VOUT = 3.3V IOUT = 200 mA VOUT 100 mV/div AC coupled VOUT 1V/div VIN 10V/div VIN 20V/div Line Step from 5V to 24V 200 s/div 80 s/div FIGURE 2-26: Load Transient Response. Start-up from VIN. 2014-2016 Microchip Technology Inc. FIGURE 2-29: Line Transient Response. DS20005308C-page 9 MCP16331 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE MCP16331 Symbol Description 6 SW Output switch node. Connects to the inductor, freewheeling diode and the bootstrap capacitor. 2 4 EN Enable pin. There is an internal pull-up on the VIN. To turn the device off, connect EN to GND. 3 -- NC Not connected. 4 -- NC Not connected. 5 2 GND Ground pin. 6 3 VFB Output voltage feedback pin. Connect VFB to an external resistor divider to set the output voltage. 7 1 BOOST Boost voltage that drives the internal NMOS control switch. A bootstrap capacitor is connected between the BOOST and SW pins. 8 5 VIN Input supply voltage pin for power and internal biasing. 9 -- EP Exposed Thermal Pad TDFN SOT-23 1 3.1 Switch Node (SW) 3.5 Boost Pin (BOOST) The switch node pin is connected internally to the NMOS switch, and externally to the SW node consisting of the inductor and Schottky diode. The external Schottky diode should be connected close to the SW node and GND. The supply for the floating high-side driver, used to turn the integrated N-Channel MOSFET on and off, is connected to the BOOST pin. 3.2 The EN pin is a logic-level input used to enable or disable the device switching and lower the quiescent current while disabled. By default the MCP16331 is enabled through an internal pull-up. To turn off the device, the EN pin must be pulled low. Connect the input voltage source to VIN. The input source should be decoupled to GND with a 4.7 F-20 F capacitor, depending on the impedance of the source and output current. The input capacitor provides current for the switch node and a stable voltage source for the internal device power. This capacitor should be connected as close as possible to the VIN and GND pins. 3.3 3.7 Enable Pin (EN) Ground Pin (GND) The ground or return pin is used for circuit ground connection. The length of the trace from the input cap return, output cap return and GND pin should be made as short as possible to minimize the noise on the GND pin. 3.4 3.6 Power Supply Input Voltage Pin (VIN) Exposed Thermal Pad Pin (EP) There is an internal electrical connection between the EP and GND pin for the TDFN package. Feedback Voltage Pin (VFB) The VFB pin is used to provide output voltage regulation by using a resistor divider. The VFB voltage will be 0.8V typical with the output voltage in regulation. DS20005308C-page 10 2014-2016 Microchip Technology Inc. MCP16331 NOTES: 2014-2016 Microchip Technology Inc. DS20005308C-page 11 MCP16331 4.0 DETAILED DESCRIPTION 4.1 Device Overview 4.1.3 EXTERNAL COMPONENTS External components consist of: The MCP16331 is a high input voltage step-down regulator, capable of supplying 500 mA to a regulated output voltage, from 2.0V to 24V. Internally, the trimmed 500 kHz oscillator provides a fixed frequency, while the Peak Current-Mode control architecture varies the duty cycle for output voltage regulation. An internal floating driver is used to turn the high-side, integrated N-Channel MOSFET on and off. The power for this driver is derived from an external boost capacitor (CBOOST) whose energy is supplied from a fixed voltage, ranging between 3.0V and 5.5V, typically the input or output voltage of the converter. For applications with an output voltage outside of this range, 12V for example, the boost capacitor bias can be derived from the output using a simple Zener diode regulator. 4.1.1 INTERNAL REFERENCE VOLTAGE (VREF) An integrated precise 0.8V reference, combined with an external resistor divider, sets the desired converter output voltage. The resistor divider range can vary without affecting the control system gain. High-value resistors consume less current, but are more susceptible to noise. 4.1.2 INTERNAL COMPENSATION All control system components necessary for stable operation over the entire device operating range are integrated, including the error amplifier and inductor current slope compensation. To add the proper amount of slope compensation, the inductor value changes along with the output voltage (see Table 5-1). * * * * * * Input capacitor Output filter (inductor and capacitor) Freewheeling diode Boost capacitor Boost blocking diode Resistor divider The selection of the external inductor, output capacitor, input capacitor and freewheeling diode is dependent upon the output voltage, input voltage, and the maximum output current. 4.1.4 ENABLE INPUT The enable input is used to disable the device while connected to GND. If disabled, the MCP16331 device consumes a minimal current from the input. 4.1.5 SOFT START The internal reference voltage rate of rise is controlled during start-up, minimizing the output voltage overshoot and the inrush current. 4.1.6 UNDERVOLTAGE LOCKOUT An integrated Undervoltage Lockout (UVLO) prevents the converter from starting until the input voltage is high enough for normal operation. The converter will typically start at 4.1V and operate down to 3.6V. Hysteresis is added to prevent starting and stopping, during start-up, as a result of loading the input voltage source. 4.1.7 OVERTEMPERATURE PROTECTION Overtemperature protection limits the silicon die temperature to +160C by turning the converter off. The normal switching resumes at +130C. DS20005308C-page 12 2014-2016 Microchip Technology Inc. MCP16331 VIN BG REF CIN VOUT VREG SS Overtemperature VREF 500 kHz Osc RTOP RBOT - VOUT PWM Latch Comp + RCOMP VREF CBOOST S + Amp - FB EN Boost BOOST Diode Boost Precharge Charge SW R Precharge Overtemp + + CCOMP + - HS Drive SHDN All Blocks GND Schottky Diode COUT CS RSENSE Slope Comp GND Note: EN has an internal pull-up, so the device will start even if the EN pin is left floating. FIGURE 4-1: 4.2 4.2.1 MCP16331 Block Diagram. Functional Description STEP-DOWN OR BUCK CONVERTER The MCP16331 is a non-synchronous, step-down or buck converter capable of stepping input voltages, ranging from 4.4V to 50V, down to 2.0V to 24V for VIN > VOUT. The integrated high-side switch is used to chop or modulate the input voltage using a controlled duty cycle for output voltage regulation. High efficiency is achieved by using a low-resistance switch, low forward drop diode, low Equivalent Series Resistance (ESR), inductor and capacitor. When the switch is turned on, a DC voltage is applied across the inductor (VIN - VOUT), resulting in a positive linear ramp of inductor current. When the switch turns off, the applied inductor voltage is equal to -VOUT, resulting in a negative linear ramp of inductor current (ignoring the forward drop of the Schottky diode). 2014-2016 Microchip Technology Inc. For steady-state, continuous inductor current operation, the positive inductor current ramp must equal the negative current ramp in magnitude. While operating in steady state, the switch duty cycle must be equal to the relationship of VOUT/VIN for constant output voltage regulation, under the condition that the inductor current is continuous or never reaches zero. For discontinuous inductor current operation, the steady-state duty cycle will be less than VOUT/VIN to maintain voltage regulation. The average of the chopped input voltage or SW node voltage is equal to the output voltage, while the average of the inductor current is equal to the output current. DS20005308C-page 13 MCP16331 IL VOUT SW VIN + - Schottky Diode L COUT IOUT IL 0 VIN VOUT SW on off on on off Continuous Inductor Current Mode IL 0 IOUT VIN SW on off on off on Discontinuous Inductor Current Mode FIGURE 4-2: 4.2.2 Step-Down Converter. PEAK CURRENT MODE CONTROL The MCP16331 integrates a Peak Current-Mode control architecture, resulting in superior AC regulation while minimizing the number of voltage loop compensation components and their size for integration. Peak CurrentMode control takes a small portion of the inductor current, replicates it and compares this replicated current sense signal with the output of the integrated error voltage. In practice, the inductor current and the internal switch current are equal during the switch-on time. By adding this peak current sense to the system control, the step-down power train system is reduced from a 2nd order to a 1st order. This reduces the system complexity and increases its dynamic performance. For Pulse-Width Modulation (PWM) duty cycles that exceed 50%, the control system can become bimodal, where a wide pulse, followed by a short pulse, repeats instead of the desired fixed pulse width. To prevent this mode of operation, an internal compensating ramp is summed into the current shown in Figure 4-2. 4.2.3 PULSE-WIDTH MODULATION (PWM) The internal oscillator periodically starts the switching period, which in the MCP16331 device's case, occurs every 2 s or 500 kHz. With the integrated switch turned on, the inductor current ramps up until the sum of the current sense and slope compensation ramp exceeds the integrated error amplifier output. The error amplifier output slews up or down to increase or decrease the inductor peak current feeding into the output LC filter. If the regulated output voltage is lower than its target, the error amplifier output rises. This results in an increase in DS20005308C-page 14 the inductor current to correct for error in the output voltage. The fixed frequency duty cycle is terminated when the sensed inductor peak current, summed with the internal slope compensation, exceeds the output voltage of the error amplifier. The PWM latch is set by turning off the internal switch and preventing it from turning on until the beginning of the next cycle. An overtemperature signal or boost cap undervoltage can also reset the PWM latch to terminate the cycle. When working close to the boundary conduction threshold, a jitter on the SW node may occur, reflecting in the output voltage. Although the low-frequency output component is very small, it may be desirable to completely eliminate this component. To achieve this, different methods can be applied to reduce or completely eliminate this component. In addition to a very good layout, a capacitor in parallel with the top feedback resistor, or an RC snubber between the SW node and GND, can be added. Typical values for the snubber are 680 pF and 430, while the capacitor in parallel with the top feedback resistor can use values from 10 pF to 47 pF. Using such a snubber eliminates the ringing on the SW node, but decreases the overall efficiency of the converter. 4.2.4 HIGH-SIDE DRIVE The MCP16331 features an integrated high-side N-Channel MOSFET for high-efficiency step-down power conversion. An N-Channel MOSFET is used for its low resistance and size (instead of a P-Channel MOSFET). A gate drive voltage above the input is necessary to turn on the high-side N-Channel. The high-side drive voltage should be between 3.0V and 5.5V. The N-Channel source is connected to the inductor and Schottky diode or switch node. When the switch is off, the boost cap voltage is replenished, typically from the output voltage for 3V to 5V output applications. A boost blocking diode is used to prevent current flow from the boost cap back into the output during the internal switch-on time. Prior to start-up, the boost cap has no stored charge to drive the switch. An internal regulator is used to "precharge" the boost cap. Once precharged, the switch is turned on and the inductor current flows. When the switch turns off, the inductor current freewheels through the Schottky diode, providing a path to recharge the boost cap. Worst-case conditions for recharge occur when the switch turns on for a very short duty cycle at light load, limiting the inductor current ramp. In this case, there is a small amount of time for the boost capacitor to recharge. For high input voltages there is enough precharge current to replace the boost cap charge. For input voltages above 5.5V typical, the MCP16331 device will regulate the output voltage with no load. After starting, the MCP16331 will regulate the output voltage until the input voltage decreases below 4V. See Figure 2-23 for device range of operation over input voltage, output voltage and load. 2014-2016 Microchip Technology Inc. MCP16331 4.2.5 ALTERNATIVE BOOST BIAS For low-voltage output applications with unregulated input voltage, a shunt regulator derived from the input can be used to derive the boost supply. For applications with high output voltage or regulated high input voltage, a series regulator can be used to derive the boost supply. In case the boost is biased from an external source while in shutdown, the device will draw slightly higher current. For 3.0V to 5.0V output voltage applications, the boost supply is typically the output voltage. For applications with VOUT < 3.0V or VOUT > 5.0V, an alternative boost supply can be used. Alternative boost supplies can be from the input, input derived, output derived or an auxiliary system voltage. Boost Diode C1 VZ = 5.1V BOOST RSH VIN 12V CB EN L VOUT 2V MCP16331 SW VIN COUT FW Diode CIN RTOP FB GND RBOT 3.0V to 5.5V External Supply Boost Diode BOOST CB EN VIN 12V L VOUT 2V MCP16331 SW VIN COUT FW Diode CIN RTOP FB GND FIGURE 4-3: RBOT Shunt and External Boost Supply. 2014-2016 Microchip Technology Inc. DS20005308C-page 15 MCP16331 Shunt boost supply regulation is used for low output voltage converters operating from a wide ranging input source. A regulated 3.0V to 5.5V supply is needed to provide high-side drive bias. The shunt uses a Zener diode to clamp the voltage within the 3.0V to 5.5V range using the resistance shown in Figure 4-3. To calculate the shunt resistance, the maximum IBOOST and IZ current are used at the minimum input voltage (Equation 4-2). EQUATION 4-2: V INMIN - V Z R SH = -----------------------------I Boost + I Z To calculate the shunt resistance, the boost drive current can be estimated using Equation 4-1. IBOOST_TYP for 3.3V Boost Supply = 0.6 mA VZ and IZ can be found on the Zener diode manufacturer's data sheet. Typically, IZ = 1 mA. IBOOST_TYP for 5.0V Boost Supply = 0.8 mA. EQUATION 4-1: SHUNT RESISTANCE Series regulator applications use a Zener diode to drop the excess voltage. The series regulator bias source can be input or output voltage derived, as shown in Figure 4-4. The boost supply must remain between 3.0V and 5.5V at all times for proper circuit operation. BOOST CURRENT I BOOST = I BOOST_TYP 1.5 mA Boost Diode VZ = 7.5V BOOST CB EN L MCP16331 VIN VOUT 12V SW VIN 15V to 50V COUT FW Diode CIN RTOP FB GND RBOT Boost Diode BOOST VZ = 7.5V CB EN 12V VIN L MCP16331 VOUT 2V SW VIN COUT FW Diode CIN GND RTOP FB RBOT FIGURE 4-4: DS20005308C-page 16 Series Regulator Boost Supply. 2014-2016 Microchip Technology Inc. MCP16331 5.0 APPLICATION INFORMATION 5.1 Typical Applications The MCP16331 step-down converter operates over a wide input voltage range, up to 50V maximum. Typical applications include generating a bias or VDD voltage for the PIC(R) microcontroller product line, digital control system bias supply for AC-DC converters, 24V industrial input and similar applications. 5.2 Adjustable Output Voltage Calculations To calculate the resistor divider values for the MCP16331, Equation 5-1 can be used. RTOP is connected to VOUT, RBOT is connected to GND and both are connected to the VFB input pin. EQUATION 5-1: R TOP V OUT = R BOT ------------- - 1 V FB EXAMPLE 5-1: VOUT = 3.3V VFB = 0.8V RBOT = 10 k 5.3 General Design Equations The step-down converter duty cycle can be estimated using Equation 5-2 while operating in Continuous Inductor Current-Mode. This equation also counts the forward drop of the freewheeling diode and internal N-Channel MOSFET switch voltage drop. As the load current increases, the switch voltage drop and diode voltage drop increase, requiring a larger PWM duty cycle to maintain the output voltage regulation. Switch voltage drop is estimated by multiplying the switch current times the switch resistance or RDSON. EQUATION 5-2: V OUT + V Diode D = ------------------------------------------------------ V IN - I SW R DSON The MCP16331 device features an integrated slope compensation to prevent the bimodal operation of the PWM duty cycle. Internally, half of the inductor current downslope is summed with the internal current sense signal. For the proper amount of slope compensation, it is recommended to keep the inductor downslope current constant by varying the inductance with VOUT, where K = 0.22V/H. EQUATION 5-3: K = V OUT L RTOP = 31.25 k (standard value = 31.6 k) VOUT = 3.328V (using standard value) EXAMPLE 5-2: CONTINUOUS INDUCTOR CURRENT DUTY CYCLE TABLE 5-1: VOUT = 5.0V RECOMMENDED INDUCTOR VALUES VFB = 0.8V VOUT K LSTANDARD RBOT = 10 k 2.0V 0.20 10 H RTOP = 52.5 k (standard value = 52.3 k) 3.3V 0.22 15 H VOUT = 4.98V (using standard value) 5.0V 0.23 22 H 12V 0.21 56 H 15V 0.22 68 H 24V 0.24 100 H The transconductance error amplifier gain is controlled by its internal impedance. The external divider resistors have no effect on system gain so a wide range of values can be used. A 10 k resistor is recommended as a good trade-off for quiescent current and noise immunity. 2014-2016 Microchip Technology Inc. DS20005308C-page 17 MCP16331 5.4 Input Capacitor Selection 5.6 Inductor Selection The step-down converter input capacitor must filter the high input ripple current as a result of pulsing or chopping the input voltage. The MCP16331 input voltage pin is used to supply voltage for the power train and as a source for internal bias. A low Equivalent Series Resistance (ESR), preferably a ceramic capacitor, is recommended. The necessary capacitance is dependent upon the maximum load current and source impedance. Three capacitor parameters to keep in mind are the voltage rating, Equivalent Series Resistance and the temperature rating. For wide temperature range applications, a multilayer X7R dielectric is mandatory, while for applications with limited temperature range, a multilayer X5R dielectric is acceptable. Typically, input capacitance between 4.7 F and 20 F is sufficient for most applications. The MCP16331 is designed to be used with small surface mount inductors. Several specifications should be considered prior to selecting an inductor. To optimize system performance, the inductance value is determined by the output voltage (Table 5-1), so the inductor ripple current is somewhat constant over the output voltage range. The input capacitor voltage rating should be a minimum of VIN plus margin. Table 5-2 contains the recommended range for the input capacitor value. VIN = 12V 5.5 EQUATION 5-4: INDUCTOR RIPPLE CURRENT V -V L IN OUT IL = --------------------------- t ON EXAMPLE 5-3: VOUT = 3.3V IOUT = 500 mA Output Capacitor Selection The output capacitor helps in providing a stable output voltage during sudden load transients and reduces the output voltage ripple. As with the input capacitor, X5R and X7R ceramic capacitors are well suited for this application. The amount and type of output capacitance, and Equivalent Series Resistance will have a significant effect on the output ripple voltage and system stability. The range of the output capacitance is limited due to the integrated compensation of the MCP16331. The output voltage capacitor voltage rating should be a minimum of VOUT plus margin. Table 5-2 contains the recommended range for the input and output capacitor value: TABLE 5-2: EQUATION 5-5: INDUCTOR PEAK CURRENT IL I LPK = -------- + I OUT 2 Inductor Ripple Current = 319 mA Inductor Peak Current = 660 mA For the example above, an inductor saturation rating of a minimum 660 mA is recommended. Low DCR inductors result in higher system efficiency. A trade-off between size, cost and efficiency is made to achieve the desired results. CAPACITOR VALUE RANGE Parameter Min. Max. CIN 4.7 F None COUT 20 F -- DS20005308C-page 18 2014-2016 Microchip Technology Inc. MCP16331 ME3220-153 15 0.52 0.90 3.2x2.5x2.0 ME3220-223 22 0.787 0.71 3.2x2.5x2.0 LPS4414-153 15 0.440 0.92 4.4x4.4x1.4 LPS4414-223 22 0.59 0.74 4.4x4.4x1.4 LPS6235-153 15 0.125 2.00 6.2x6.2x3.5 LPS6235-223 22 0.145 1.7 6.2x6.2x3.5 MSS6132-153 15 0.106 1.56 6.1x6.1x3.2 MSS6132-223 22 0.158 1.22 6.1x6.1x3.2 MSS7341-153 15 0.055 1.78 6.6x6.6x4.1 MSS7341-223 22 0.082 1.42 6.6x6.6x4.1 LPS3015-153 15 0.700 0.62 3.0x3.0x1.5 LPS3015-223 22 0.825 0.5 3.0x3.0x1.5 0.575 0.75 2.8x2.8x2.8 ISAT (A) Size WxLxH (mm) Part Number Value (H) ISAT (A) MCP16331 RECOMMENDED 5V INDUCTORS DCR () TABLE 5-4: Value (H) MCP16331 RECOMMENDED 3.3V INDUCTORS DCR () TABLE 5-3: Size WxLxH (mm) Coilcraft(R) Wurth Elektronik Part Number Coilcraft(R) (R) Wurth Elektronik 744025150 15 744042150 7447779115 (R) 0.400 0.900 2.8x2.8x2.8 744025220 22 15 0.22 0.75 4.8x4.8x1.8 744042220 22 0.3 0.6 4.8x4.8x1.8 15 0.081 2.2 7.3x7.3x4.5 7447779122 22 0.11 1.7 7.3x7.3x4.5 Coiltronics(R) Cooper SD12-150R 15 SD3118-150-R SD52-150-R Bussman(R) 0.408 0.692 5.2x5.2x1.2 SD12-220-R 22 0.633 0.574 5.2x5.2x1.2 15 0.44 0.75 3.2x3.2x1.8 SD3118-220-R 22 0.676 0.61 3.2x3.2x1.8 15 0.161 0.88 5.2x5.5.2.0 SD52-220-R 22 0.204 0.73 5.2x5.2x2 Sumida(R) Sumida(R) CDPH4D19FNP -150MC 15 0.075 0.66 5.2x5.2x2.0 CDPH4D19FNP -220MC 22 0.135 0.54 5.2x5.2x2 CDRH3D16/ HPNP-150MC 15 0.410 0.65 4.0x4.0x1.8 CDRH3D16/ HPNP-220MC 22 0.61 0.55 4.0x4.0x1.8 22 0.15 0.85 6.3x6.3x3 TDK - EPCOS(R) B82462G4153M TDK - EPCOS(R) 15 0.097 1.05 2014-2016 Microchip Technology Inc. 6.3x6.3x3 82462G4223M DS20005308C-page 19 MCP16331 5.7 Freewheeling Diode 5.9 The freewheeling diode creates a path for inductor current flow after the internal switch is turned off. The average diode current is dependent upon the output load current at duty cycle (D). The efficiency of the converter is a function of the forward drop and speed of the freewheeling diode. A low forward drop Schottky diode is recommended. The current rating and voltage rating of the diode is application-dependent. The diode voltage rating should be a minimum of VIN plus margin. The average diode current can be calculated using Equation 5-6. EQUATION 5-6: DIODE AVERAGE CURRENT Boost Capacitor The boost capacitor is used to supply current for the internal high-side drive circuitry that is above the input voltage. The boost capacitor must store enough energy to completely drive the high-side switch on and off. A 0.1 F X5R or X7R capacitor is recommended for all applications. The boost capacitor maximum voltage is 5.5V, so a 6.3V or 10V rated capacitor is recommended. 5.10 Thermal Calculations The MCP16331 is available in the 6-lead SOT-23 and 8-lead TDFN packages. By calculating the power dissipation and applying the package thermal resistance (JA), the junction temperature is estimated. To quickly estimate the internal power dissipation for the switching step-down regulator, an empirical calculation using measured efficiency can be used. Given the measured efficiency, the internal power dissipation is estimated by Equation 5-7. This power dissipation includes all internal and external component losses. For a quick internal estimate, subtract the estimated Schottky diode loss and inductor DCR loss from the PDIS calculation in Equation 5-7. I DAVG = 1 - D I OUT EXAMPLE 5-4: IOUT = 0.5A VIN = 15V VOUT = 5V D = 5/15 EQUATION 5-7: IDAVG = 333 mA V OUT I OUT ----------------------------- Efficiency- - V OUT I OUT = PDis A 0.5A to 1A diode is recommended. TABLE 5-5: TOTAL POWER DISSIPATION ESTIMATE FREEWHEELING DIODES 18 VIN, 500 mA Diodes Inc. B130L-13-F 30V, 1A The difference between the first term, input power and the second term, power delivered, is the total system power dissipation. The freewheeling Schottky diode losses are determined by calculating the average diode current and multiplying by the diode forward drop. The inductor losses are estimated by PL = IOUT2 x LDCR. 48 VIN, 500 mA Diodes Inc. B1100 100V, 1A EQUATION 5-8: App Mfr. Part Number Rating 12 VIN, 500 mA Diodes Inc. DFLS120L-7 20V, 1A 24 VIN, 100 mA Diodes Inc. B0540Ws-7 40V, 0.5A 5.8 Boost Diode The boost diode is used to provide a charging path from the low-voltage gate drive source while the switch node is low. The boost diode blocks the high voltage of the switch node from feeding back into the output voltage when the switch is turned on, forcing the switch node high. DIODE POWER DISSIPATION ESTIMATE PDiode = VF 1 - D I OUT A standard 1N4148 ultra-fast diode is recommended for its recovery speed, high voltage blocking capability, availability and cost. The voltage rating required for the boost diode is VIN. For low boost voltage applications, a small Schottky diode with the appropriately rated voltage can be used to lower the forward drop, increasing the boost supply for the gate drive. DS20005308C-page 20 2014-2016 Microchip Technology Inc. MCP16331 EXAMPLE 5-5: 5.11 VIN = 10V VOUT = 5.0V IOUT = 0.4A Efficiency = 90% Total System Dissipation = 222 mW LDCR = 0.15 PL = 24 mW Diode VF = 0.50 D = 50% PDiode = 125 mW MCP16331 internal power dissipation estimate: PDIS - PL - PDIODE = 73 mW JA = 198C/W Estimated Junction = +14.5C Temperature Rise 2014-2016 Microchip Technology Inc. PCB Layout Information Good printed circuit board layout techniques are important to any switching circuitry and switching power supplies are no different. When wiring the switching high-current paths, short and wide traces should be used. Therefore, it is important that the input and output capacitors be placed as close as possible to the MCP16331 to minimize the loop area. The feedback resistors and feedback signal should be routed away from the switching node, and the switching current loop. When possible, ground planes and traces should be used to help shield the feedback signal and minimize noise and magnetic interference. A good MCP16331 layout starts with CIN placement. CIN supplies current to the input of the circuit when the switch is turned on. In addition to supplying high-frequency switch current, CIN also provides a stable voltage source for the internal MCP16331 circuitry. Unstable PWM operation can result if there are excessive transients or ringing on the VIN pin of the MCP16331 device. In Figure 5-1, CIN is placed close to pin 5. A ground plane on the bottom of the board provides a low resistive and inductive path for the return current. The next priority in placement is the freewheeling current loop formed by D1, COUT and L, while strategically placing the COUT return close to the CIN return. Next, the boost capacitor should be placed between the boost pin and the switch node pin, SW. This leaves space close to the MCP16331 VFB pin to place RTOP and RBOT. RTOP and RBOT are routed away from the switch node so noise is not coupled into the high-impedance VFB input. DS20005308C-page 21 MCP16331 Bottom Plane is GND Bottom Trace RBOT RTOP 10 MCP16331 C DB 1 B VIN VOUT D1 L 2 x CIN GND COUT COUT 4 BOOST EN GND DB 1 CB VIN 4V to 50V CIN 5 MCP16331 SW VOUT 3.3V L 6 VIN COUT D1 GND FB RTOP 3 2 Component Value CIN COUT L RTOP RBOT D1 DB CB 2 x 10 F 2 x 10 F 15 H 31.2 k 10 k B1100 1N4148 100 nF 10 RBOT Note: A 10 resistor is used with a network analyzer to measure system gain and phase. FIGURE 5-1: DS20005308C-page 22 MCP16331 SOT-23-6 Recommended Layout, 500 mA Design. 2014-2016 Microchip Technology Inc. MCP16331 Bottom Plane is GND MCP16331 RBOT RTOP DB VIN VOUT CB CIN GND GND COUT D1 4 BOOST EN GND DB 1 CB VIN 5 4V to 50V CIN VIN MCP16331 6 COUT D1 GND 2 Component Value CIN COUT L RTOP RBOT D1 DB CB 1 F 10 F 15 H 31.2 k 10 k STPS0560Z 1N4148 100 nF FIGURE 5-2: SW VOUT 3.3V L FB 3 RTOP RBOT Compact MCP16331 SOT-23-6 D2 Recommended Layout, Low-Current Design. 2014-2016 Microchip Technology Inc. DS20005308C-page 23 MCP16331 MCP16331 CSNUB RSNUB RTOP RBOT L CIN COUT D1 CB DB VIN VOUT GND 2 BOOST EN DB 7 CB VIN 4V to 50V CIN 8 VIN MCP16331 1 CSNUB D1 GND 5 Note: SW Component Value CIN COUT L RTOP RBOT D1 DB CB CTOP CSNUB RSNUB 2x10 F 2x10 F 22 H 31.2 k 10 k MBRS1100 1N4148WS 100 nF 20 pF 430 pF 680 FB VOUT 3.3V L RSNUB 6 COUT RTOP CTOP Optional RBOT Red represents top layer pads, and traces and blue represent bottom layer pads and traces. On the bottom layer, a GND plane should be placed, which is not represented in the example above for visibility reasons. FIGURE 5-3: DS20005308C-page 24 MCP16331 TDFN-8 Recommended Layout Design. 2014-2016 Microchip Technology Inc. MCP16331 6.0 TYPICAL APPLICATION CIRCUITS U1 Boost Diode BOOST CB EN L MCP16331 VIN 4.5V to 50V VOUT 3.3V SW VIN COUT FW Diode CIN GND RTOP FB RBOT Component Value Manufacturer Part Number Comment CIN 2 x 10 F COUT 2 x 10 F Taiyo Yuden Co., Ltd. JMK212B7106KG-T Capacitor, 10 F, 6.3V, Ceramic, X7R, 0805, 10% 15 H Coilcraft(R) MSS6132-153ML MSS6132, 15 H, Shielded Power Inductor L TDK Corporation C5750X7S2A106M230KB Capacitor, 10 F, 100V, X7S, 2220 RTOP 31.6 k Panasonic(R)- ECG ERJ-3EKF3162V Resistor, 31.6 K, 1/10W, 1%, 0603, SMD RBOT 10 k Panasonic - ECG ERJ-3EKF1002V Resistor, 10.0 K, 1/10W, 1%, 0603, SMD FW Diode B1100 Diodes Incorporated(R) B1100-13-F Boost Diode 1N4148 Diodes Incorporated 1N4148WS-7-F Diode Switch, 75V, 200 mW, SOD-323 CB 100 nF AVX Corporation 0603YC104KAT2A Capacitor, 0.1 F, 16V Ceramic, X7R, 0603, 10% U1 MCP16331 Microchip Technology Inc. MCP16331-E/CH MCP16331-E/MNY MCP16331, 500 kHz Buck Switcher, 50V, 500 mA FIGURE 6-1: Schottky, 100V, 1A, SMA Typical Application, 50V VIN to 3.3V VOUT. 2014-2016 Microchip Technology Inc. DS20005308C-page 25 MCP16331 U1 Boost Diode BOOST CB EN VIN 15V to 50V DZ L MCP16331 VOUT 12V SW VIN COUT FW Diode CIN GND RTOP FB RBOT Component Value Manufacturer CIN 2 x 10 F TDK Corporation COUT 2 x 10 F Taiyo Yuden Co., Ltd. JMK212B7106KG-T Capacitor, Ceramic, 10 F, 25V, X7R, 10%, 1206 L 56 H Coilcraft(R) MSS7341-563ML MSS7341, 56 H, Shielded Power Inductor RTOP 140 k Panasonic(R) - ECG ERJ-3EKF3162V Resistor, 140 K, 1/10W, 1%, 0603, SMD RBOT 10 k Panasonic - ECG ERJ-3EKF1002V FW Diode B1100 Diodes Incorporated(R) B1100-13-F Boost Diode 1N4148 Diodes Incorporated 1N4148WS-7-F Diode Switch, 75V, 200 mW, SOD-323 CB 100 nF AVX Corporation 0603YC104KAT2A Capacitor, 0.1 F, 16V, Ceramic, X7R, 0603, 10% DZ 7.5V Zener Diodes Incorporated MMSZ5236BS-7-F Diode Zener, 7.5V, 200 mW, SOD-323 U1 MCP16331 Microchip Technology Inc. MCP16331-E/CH MCP16331-E/MNY MCP16331, 500 kHz Buck Switcher, 50V, 500 mA FIGURE 6-2: DS20005308C-page 26 Part Number Comment C5750X7S2A106M230KB Capacitor, 10 F, 100V, X7S, 2220 Resistor, 10.0 K, 1/10W, 1%, 0603, SMD Diode Schottky, 100V, 1A, SMB Typical Application, 15V-50V Input; 12V Output. 2014-2016 Microchip Technology Inc. MCP16331 DZ Boost Diode U1 BOOST CB EN 12V VIN L MCP16331 VOUT 2V SW VIN COUT FW Diode CIN GND RTOP FB RBOT Component Value Manufacturer 2 x 10 F Taiyo Yuden Co., Ltd. JMK212B7106KG-T Capacitor, Ceramic, 10 F, 25V, X7R, 10%, 1206 COUT 22 F Taiyo Yuden Co., Ltd. JMK316B7226ML-T Capacitor, Ceramic, 22 F, 6.3V, X7R, 1206 L 10 H Coilcraft(R) MSS4020-103ML 10 H Shielded Power Inductor RTOP 15 k Panasonic(R) - ECG ERJ-3EKF1502V Resistor, 15.0 K, 1/10W, 1%, 0603, SMD RBOT 10 k Panasonic - ECG ERJ-3EKF1002V Resistor, 10.0 K, 1/10W, 1%, 0603, SMD FW Diode PD3S Diodes Incorporated(R) PD3S120L-7 Diode Schottky, 1A, 20V, POWERDI323 Boost Diode 1N4148 Diodes Incorporated 1N4148WS-7-F Diode Switch, 75V, 200 mW, SOD-323 CB 100 nF AVX Corporation 0603YC104KAT2A Capacitor, 0.1 F, 16V, Ceramic, X7R, 0603, 10% DZ 7.5V Zener Diodes Incorporated MMSZ5236BS-7-F Diode Zener, 7.5V, 200 mW, SOD-323 U1 MCP16331 Microchip Technology Inc. MCP16331-E/CH MCP16331-E/MNY MCP16331, 500 kHz Buck Switcher, 50V, 500 mA CIN FIGURE 6-3: Part Number Comment Typical Application, 12V Input; 2V Output at 500 mA. 2014-2016 Microchip Technology Inc. DS20005308C-page 27 MCP16331 Boost Diode DZ CZ U1 BOOST RZ CB EN VIN L MCP16331 2.5V VIN 10V to 16V VOUT SW COUT FW Diode CIN GND RTOP FB RBOT Component Value Manufacturer 2 x 10 F Taiyo Yuden Co., Ltd. JMK212B7106KG-T Capacitor, Ceramic, 10 F, 25V, X7R, 10%, 1206 COUT 22 F Taiyo Yuden Co., Ltd. JMK316B7226ML-T Capacitor, Ceramic, 22 F, 6.3V, X7R, 1206 L 12 H Coilcraft(R) LPS4414-123MLB LPS4414, 12 H, Shielded Power Inductor 21.5 k Panasonic(R) - ECG ERJ-3EKF2152V Resistor, 21.5 K, 1/10W, 1%, 0603, SMD CIN RTOP Part Number Comment 10 k Panasonic - ECG ERJ-3EKF1002V DFLS120 Diodes Incorporated(R) DFLS120L-7 Boost Diode 1N4148 Diodes Incorporated 1N4148WS-7-F Diode Switch, 75V, 200 mW, SOD-323 CB 100 nF AVX Corporation 0603YC104KAT2A Capacitor, 0.1 F, 16V, Ceramic, X7R, 0603, 10% DZ 5.1V Zener Diodes Incorporated BZT52C5V1S Diode Zener, 5.1V, 200 mW, SOD-323 CZ 1 F Taiyo Yuden Co., Ltd. RZ 1 k Panasonic - ECG U1 MCP16331 Microchip Technology Inc. RBOT FW Diode FIGURE 6-4: DS20005308C-page 28 Resistor, 10.0 K, 1/10W, 1%, 0603, SMD Diode Schottky, 20V, 1A, POWERDI123 LMK107B7105KA-T Capacitor, Ceramic, 1.0 F, 10V, X7R, 0603 ERJ-8ENF1001V Resistor, 1.00 k, 1/4W, 1%, 1206, SMD MCP16331-E/CH MCP16331, 500 kHz Buck Switcher, 50V, MCP16331-E/MNY 500 mA Typical Application, 10V to 16V VIN to 2.5V VOUT. 2014-2016 Microchip Technology Inc. MCP16331 U1 Boost Diode EN BOOST CB L VIN MCP16331 3.3V VIN 4V to 50V VOUT SW COUT FW Diode CIN GND RTOP FB RBOT Component CIN Value 2 x 10 F Manufacturer Part Number Comment TDK Corporation C5750X7S2A106M230KB Capacitor, 10 F, 100V, X7S, 2220 COUT 10 F Taiyo Yuden JMK107BJ106MA-T L 15 H Coilcraft(R) LPS3015-153MLB Inductor Power, 15 H, 0.61A, SMD 31.6 k Panasonic(R) - ECG ERJ-2RKF3162X Resistor, 31.6 K, 1/10W, 1%, 0402, SMD Resistor, 10.0 K, 1/10W, 1%, 0603, SMD RTOP RBOT Capacitor, Ceramic, 10 F, 6.3V, X5R, 0603 10 k Panasonic - ECG ERJ-3EKF1002V BAT46WH NXP Semiconductors BAT46WH Boost Diode 1N4148 Diodes Incorporated(R) 1N4148WS-7-F Diode Switch, 75V, 200 mW, SOD-323 CB 100 nF TDK Corporation C1005X5R0J104M Capacitor, Ceramic, 0.10 F, 6.3V, X5R, 0402 U1 MCP16331 Microchip Technology Inc. MCP16331-E/CH MCP16331-E/MNY MCP16331, 500 kHz Buck Switcher, 50V, 500 mA FW Diode FIGURE 6-5: BAT46WH - Diode, Schottky, 100V, 0.25A, SOD123F Typical Application, 4V to 50V VIN to 3.3V VOUT at 150 mA. 2014-2016 Microchip Technology Inc. DS20005308C-page 29 MCP16331 7.0 NON-TYPICAL APPLICATION CIRCUITS For additional information, please refer to the Application Note: AN2102 "Designing Applications with MCP16331 High-Input Voltage Buck Converter" (DS00002102), which can be found on the www.microchip.com web site. DB U1 BST VIN 9V-16V L 22 H VIN SW CIN 2 x 10 F OFF ON RT 52.3 k COUT 2 x 10 F FB EN RB 10 k GND Component GND D 2A, 60V MCP16331 GND 1N4148 CB 0.1 F Value Manufacturer CIN 2 x 10 F TDK Corporation C3225X7R1H106M250AC Capacitor, Ceramic, 10 F, 50V, 20%, X7R, SMD, 1210 COUT 2 x 10 F TDK Corporation C3216X7R1E106K160AB Capacitor, Ceramic, 10 F, 25V, 10%, X7R, SMD, 1206 22 H Coilcraft(R) RTOP 52.3 k Panasonic(R) - ECG ERJPA3F5232V Resistor, 52.3 K, 1/10W, 1%, 0603, SMD RBOT 10 k Panasonic - ECG ERJ-3EKF1002V Resistor, 10.0 K, 1/10W, 1%, 0603, SMD L D STPS2L60A STMicroelectronics Part Number VOUT -5V MSS1048-223MLC STPS2L60A Comment MSS1048-223MLC, 22 H, Shielded Power Inductor Schottky, 60V, 2A, SMA DB 1N4148 Diodes Incorporated(R) 1N4148WS-7-F Diode Switch, 75V, 200 mW, SOD-323 CB 100 nF AVX Corporation 0603YC104KAT2A Capacitor, 0.1 F, 16V, Ceramic, X7R, 0603, 10% U1 MCP16331 Microchip Technology Inc. MCP16331-E/CH MCP16331-E/MNY MCP16331, 500 kHz Buck Switcher, 50V, 500 mA FIGURE 7-1: DS20005308C-page 30 Inverting Buck-Boost Application, 9V-16V VIN to -5V VOUT. 2014-2016 Microchip Technology Inc. MCP16331 CB 0.1 F U1 VIN 4.5V-18V BST VIN D3 DZ 1N4148 7V5 L 56 H SW CIN 2 x 10 F R1 MCP16331 4.7 OFF GND Component Value Q1 RT 140 k COUT 2 x 10 F FB EN ON VOUT 12V D2 Manufacturer D1 2A, 60V Part Number RB 10 k Comment CIN 2 x 10 F TDK Corporation C3225X7R1H106M250AC Capacitor, Ceramic, 10 F, 50V, 20%, X7R, SMD, 1210 COUT 2 x 10 F TDK Corporation L 56 H Coilcraft(R) MSS1048-563MLC RTOP 140 k Panasonic(R) - ECG ERJP03F1403V RBOT 10 k Panasonic - ECG ERJ-3EKF1002V Resistor, 10.0 K, 1/10W, 1%, 0603, SMD R1 4.7 Panasonic - ECG ERJ-B3BF4R7V Resistor, TKF, 4.7R, 1%, 1/10W, SMD, 0805 D1, D2 STPS2L60A STMicroelectronics C3216X7R1E106K160AB Capacitor, Ceramic, 10 F, 25V, 10%, X7R, SMD, 1206 STPS2L60A MSS1048-563MLC, 56 H, Shielded Power Inductor Resistor, 140 K, 1/10W, 1%, 0603, SMD Schottky, 60V, 2A, SMA D3 1N4148 Diodes Incorporated(R) 1N4148WS-7-F Diode Switch, 75V, 200 mW, SOD-323 DZ 7.5V Diodes Incorporated BZT52C7V5-7-F Zener Diode, 7.5V, 500 mW, SOD-123 CB 100 nF AVX Corporation 0603YC104KAT2A Capacitor, 0.1 F, 16V, Ceramic, X7R, 0603, 10% Q1 FDN359AN Fairchild Semiconductor(R) FDN359AN U1 MCP16331 Microchip Technology Inc. MCP16331-E/CH MCP16331-E/MNY FIGURE 7-2: Transistor, FET N-CH, FDN359AN, 30V, 2.7A, 460 mW, SOT-23-3 MCP16331, 500 kHz Buck Switcher, 50V, 500 mA Non-Inverting Buck-Boost Application, 4.5V-18V VIN to 12V VOUT. 2014-2016 Microchip Technology Inc. DS20005308C-page 31 MCP16331 VOUT1S 5V D1 L1B(1) 10 H U1 C2 1 F C1 10 F GND SGND CB 1N4148 0.1 F BST VIN SW MCP16331 ON 10 H D2 2A, 60V Component CIN COUT, C1 C2, C3 L1 RT RB D1 D2 DB CB U1 U2 RT 52.3 k COUT 2 x 10 F FB EN RB 10 k GND Note 1: 2: VOUT 5V L1A(1) CIN 2 x 10 F OFF C3 1 F SGND DB U2 VIN 10V-40V VOUT2S 3.3V VOUT VIN MCP1755 L1A and L1B are mutually coupled. Please refer to the Application Note: AN2102 "Designing Applications with MCP16331 High-Input Voltage Buck Converter" (DS00002102), which can be found on the www.microchip.com web site. Value Manufacturer 2 x 10 F TDK Corporation Part Number Comment C3225X7R1H106M250AC Capacitor, Ceramic, 10 F, 50V, 20%, X7R, SMD, 1210 10 F TDK Corporation C3216X7R1E106K160AB Capacitor, Ceramic, 10 F, 25V, 10%, X7R, SMD, 1206 1 F TDK Corporation CGA4J3X7R1E105K125AB Capacitor, Ceramic,1 F, 25V, 10%, X7R, SMD, 0805 (R) 10 H Wurth Elektronik 744874100 744874100, 10 H, Shielded Coupled Inductors 52.3 k Panasonic(R) - ECG ERJPA3F5232V Resistor, 52.3 K, 1/10W, 1%, 0603, SMD 10 k Panasonic - ECG ERJ-3EKF1002V Resistor, 10.0 K, 1/10W, 1%, 0603, SMD MBR0530 Fairchild MBR0530 Schottky Rectifier, 30V, 500 mA, SOD-123 Semiconductor(R) STPS2L60A STMicroelectronics STPS2L60A Schottky, 60V, 2A, SMA 1N4148 Diodes 1N4148WS-7-F Diode Switch, 75V, 200 mW, SOD-323 Incorporated(R) 100 nF AVX Corporation 0603YC104KAT2A Capacitor, 0.1 F, 16V, Ceramic, X7R, 0603, 10% MCP1755 Microchip MCP1755S-3302E/DB MCP1755, 3.3V LDO, 300 mA, SOT-223-3 Technology Inc. MCP16331 Microchip MCP16331-E/CH MCP16331, 500 kHz Buck Switcher, 50V, Technology Inc. MCP16331-E/MNY 500 mA FIGURE 7-3: Voltages.(2) DS20005308C-page 32 Multiple Outputs Buck Converter 10V-40V Input Voltage to 2x5V and 3.3V Output 2014-2016 Microchip Technology Inc. MCP16331 8.0 PACKAGING INFORMATION 8.1 Package Marking Information 6-Lead SOT-23 Example MF25 XXNN 8-Lead TDFN (2x3x0.75 mm) Example ACD 615 25 Legend: XX...X Y YY WW NNN e3 * Note: Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC(R) designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2014-2016 Microchip Technology Inc. DS20005308C-page 33 MCP16331 6-Lead Plastic Small Outline Transistor (CH, CHY) [SOT-23] For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging Note: 2X 0.15 C A-B D e1 A D E 2 E1 E E1 2 2X 0.15 C D 2X 0.20 C A-B e 6X b B 0.20 C A-B D TOP VIEW C A A2 SEATING PLANE 6X A1 0.10 C SIDE VIEW R1 L2 R c GAUGE PLANE L (L1) END VIEW Microchip Technology Drawing C04-028C (CH) Sheet 1 of 2 DS20005308C-page 34 2014-2016 Microchip Technology Inc. MCP16331 6-Lead Plastic Small Outline Transistor (CH, CHY) [SOT-23] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging Units Dimension Limits N Number of Leads e Pitch Outside lead pitch e1 Overall Height A Molded Package Thickness A2 Standoff A1 Overall Width E Molded Package Width E1 Overall Length D Foot Length L Footprint L1 Seating Plane to Gauge Plane L1 Foot Angle c Lead Thickness Lead Width b MIN 0.90 0.89 0.00 0.30 0 0.08 0.20 MILLIMETERS NOM 6 0.95 BSC 1.90 BSC 1.15 2.80 BSC 1.60 BSC 2.90 BSC 0.45 0.60 REF 0.25 BSC - MAX 1.45 1.30 0.15 0.60 10 0.26 0.51 Notes: 1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.25mm per side. 2. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. REF: Reference Dimension, usually without tolerance, for information purposes only. Microchip Technology Drawing C04-028C (CH) Sheet 2 of 2 2014-2016 Microchip Technology Inc. DS20005308C-page 35 MCP16331 6-Lead Plastic Small Outline Transistor (CH, CHY) [SOT-23] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging GX Y Z C G G SILK SCREEN X E RECOMMENDED LAND PATTERN Units Dimension Limits E Contact Pitch C Contact Pad Spacing X Contact Pad Width (X3) Y Contact Pad Length (X3) G Distance Between Pads Distance Between Pads GX Z Overall Width MIN MILLIMETERS NOM 0.95 BSC 2.80 MAX 0.60 1.10 1.70 0.35 3.90 Notes: 1. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing No. C04-2028B (CH) DS20005308C-page 36 2014-2016 Microchip Technology Inc. MCP16331 8-Lead Plastic Dual Flat, No Lead Package (MN) - 2x3x0.8 mm Body [TDFN] With 1.4x1.3 mm Exposed Pad (JEDEC Package type WDFN) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging D A B N (DATUM A) (DATUM B) E NOTE 1 2X 0.15 C 1 2 2X 0.15 C TOP VIEW 0.10 C C (A3) A SEATING PLANE 8X 0.08 C A1 SIDE VIEW 0.10 C A B D2 L 1 2 0.10 C A B NOTE 1 E2 K N 8X b e 0.10 0.05 C A B C BOTTOM VIEW Microchip Technology Drawing No. C04-129-MN Rev E Sheet 1 of 2 2014-2016 Microchip Technology Inc. DS20005308C-page 37 MCP16331 8-Lead Plastic Dual Flat, No Lead Package (MN) - 2x3x0.8 mm Body [TDFN] With 1.4x1.3 mm Exposed Pad (JEDEC Package type WDFN) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging Units Dimension Limits N Number of Pins e Pitch A Overall Height A1 Standoff Contact Thickness A3 D Overall Length Overall Width E Exposed Pad Length D2 Exposed Pad Width E2 b Contact Width L Contact Length Contact-to-Exposed Pad K MIN 0.70 0.00 1.35 1.25 0.20 0.25 0.20 MILLIMETERS NOM 8 0.50 BSC 0.75 0.02 0.20 REF 2.00 BSC 3.00 BSC 1.40 1.30 0.25 0.30 - MAX 0.80 0.05 1.45 1.35 0.30 0.45 - Notes: 1. Pin 1 visual index feature may vary, but must be located within the hatched area. 2. Package may have one or more exposed tie bars at ends. 3. Package is saw singulated 4. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. REF: Reference Dimension, usually without tolerance, for information purposes only. Microchip Technology Drawing No. C04-129-MN Rev E Sheet 2 of 2 DS20005308C-page 38 2014-2016 Microchip Technology Inc. MCP16331 8-Lead Plastic Dual Flat, No Lead Package (MN) - 2x3x0.8 mm Body [TDFN] With 1.4x1.3 mm Exposed Pad (JEDEC Package type WDFN) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging X2 EV 8 OV C Y2 EV Y1 1 2 SILK SCREEN X1 E RECOMMENDED LAND PATTERN Units Dimension Limits E Contact Pitch Optional Center Pad Width X2 Optional Center Pad Length Y2 Contact Pad Spacing C Contact Pad Width (X8) X1 Contact Pad Length (X8) Y1 Thermal Via Diameter V Thermal Via Pitch EV MIN MILLIMETERS NOM 0.50 BSC MAX 1.60 1.50 2.90 0.25 0.85 0.30 1.00 Notes: 1. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. 2. For best soldering results, thermal vias, if used, should be filled or tented to avoid solder loss during reflow process Microchip Technology Drawing No. C04-129-MN Rev. B 2014-2016 Microchip Technology Inc. DS20005308C-page 39 MCP16331 NOTES: DS20005308C-page 40 2014-2016 Microchip Technology Inc. MCP16331 APPENDIX A: REVISION HISTORY Revision C (December 2016) The following is a list of modifications: 1. 2. 3. Updated Section 6.0 "Typical Application Circuits". Added Section 7.0 "Non-Typical Application Circuits". Minor typographical corrections. Revision B (October 2014) The following is a list of modifications: 1. Added edits to incorporate the AEC-Q100 qualification. Revision A (June 2014) * Original release of this document. 2014-2016 Microchip Technology Inc. DS20005308C-page 41 MCP16331 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. [X](1) PART NO. Device Tape and Reel Option X /XX Temperature Range Package Device: MCP16331: High-Voltage Input Integrated Switch Step-Down Regulator MCP16331T: High-Voltage Input Integrated Switch Step-Down Regulator (Tape and Reel) Tape and Reel Option: T = Tape and Reel(1) Temperature Range: E = -40C to +125C Package: CH = Plastic Small Outline Transistor, SOT-23, 6-Lead MNY* = Plastic Dual Flat TDFN, 8-Lead *Y DS20005308C-page 42 = Nickel palladium gold manufacturing designator. Only available on the TDFN package. Examples: a) b) MCP16331T-E/CH: Tape and Reel, Extended Temperature, 6-Lead SOT-23 package MCP16331T-E/MNY: Tape and Reel, Extended Temperature, 8-Lead TDFN package Note 1: Tape and Reel identifier only appears in the catalog part number description. This identifier is used for ordering purposes and is not printed on the device package. Check with your Microchip Sales Office for package availability with the Tape and Reel option. 2014-2016 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * Microchip products meet the specification contained in their particular Microchip Data Sheet. * Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. * There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. * Microchip is willing to work with the customer who is concerned about the integrity of their code. * Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2014-2016 Microchip Technology Inc. Trademarks The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. (c) 2014-2016, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-1189-5 DS20005308C-page 43 Worldwide Sales and Service AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://www.microchip.com/ support Web Address: www.microchip.com Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Harbour City, Kowloon China - Xiamen Tel: 86-592-2388138 Fax: 86-592-2388130 Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 China - Zhuhai Tel: 86-756-3210040 Fax: 86-756-3210049 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 India - Bangalore Tel: 91-80-3090-4444 Fax: 91-80-3090-4123 Finland - Espoo Tel: 358-9-4520-820 Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Hong Kong Tel: 852-2943-5100 Fax: 852-2401-3431 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8569-7000 Fax: 86-10-8528-2104 Austin, TX Tel: 512-257-3370 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 China - Chongqing Tel: 86-23-8980-9588 Fax: 86-23-8980-9500 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Novi, MI Tel: 248-848-4000 Houston, TX Tel: 281-894-5983 Indianapolis Noblesville, IN Tel: 317-773-8323 Fax: 317-773-5453 Tel: 317-536-2380 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Tel: 951-273-7800 Raleigh, NC Tel: 919-844-7510 New York, NY Tel: 631-435-6000 San Jose, CA Tel: 408-735-9110 Tel: 408-436-4270 Canada - Toronto Tel: 905-695-1980 Fax: 905-695-2078 DS20005308C-page 44 China - Dongguan Tel: 86-769-8702-9880 China - Guangzhou Tel: 86-20-8755-8029 China - Hangzhou Tel: 86-571-8792-8115 Fax: 86-571-8792-8116 China - Hong Kong SAR Tel: 852-2943-5100 Fax: 852-2401-3431 China - Nanjing Tel: 86-25-8473-2460 Fax: 86-25-8473-2470 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 China - Shanghai Tel: 86-21-3326-8000 Fax: 86-21-3326-8021 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 China - Shenzhen Tel: 86-755-8864-2200 Fax: 86-755-8203-1760 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 India - New Delhi Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 France - Saint Cloud Tel: 33-1-30-60-70-00 India - Pune Tel: 91-20-3019-1500 Germany - Garching Tel: 49-8931-9700 Germany - Haan Tel: 49-2129-3766400 Japan - Osaka Tel: 81-6-6152-7160 Fax: 81-6-6152-9310 Germany - Heilbronn Tel: 49-7131-67-3636 Japan - Tokyo Tel: 81-3-6880- 3770 Fax: 81-3-6880-3771 Germany - Karlsruhe Tel: 49-721-625370 Korea - Daegu Tel: 82-53-744-4301 Fax: 82-53-744-4302 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 Germany - Rosenheim Tel: 49-8031-354-560 Malaysia - Kuala Lumpur Tel: 60-3-6201-9857 Fax: 60-3-6201-9859 Malaysia - Penang Tel: 60-4-227-8870 Fax: 60-4-227-4068 Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan - Hsin Chu Tel: 886-3-5778-366 Fax: 886-3-5770-955 Taiwan - Kaohsiung Tel: 886-7-213-7830 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 Taiwan - Taipei Tel: 886-2-2508-8600 Fax: 886-2-2508-0102 China - Xian Tel: 86-29-8833-7252 Fax: 86-29-8833-7256 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 Israel - Ra'anana Tel: 972-9-744-7705 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Italy - Padova Tel: 39-049-7625286 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Norway - Trondheim Tel: 47-7289-7561 Poland - Warsaw Tel: 48-22-3325737 Romania - Bucharest Tel: 40-21-407-87-50 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 Sweden - Gothenberg Tel: 46-31-704-60-40 Sweden - Stockholm Tel: 46-8-5090-4654 UK - Wokingham Tel: 44-118-921-5800 Fax: 44-118-921-5820 2014-2016 Microchip Technology Inc. 11/07/16