© Semiconductor Components Industries, LLC, 2016
June, 2018 − Rev. 3 1Publication Order Number:
NTSS5100/D
NTSS5100, NTSAF5100
Low Forward Voltage, Low
Leakage Trench-based
Schottky Rectifier
Features
•Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
•Fast Switching with Exceptional Temperature Stability
•Low Power Loss and Lower Operating Temperature
•Higher Efficiency for Achieving Regulatory Compliance
•High Surge Capability
•These are Pb−Free and Halide−Free Devices
Typical Applications
•Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
•High Frequency and DC−DC Converters
•Freewheeling and OR−ing diodes
•Reverse Battery Protection
•Instrumentation
•LED Lighting
Mechanical Characteristics:
•Case: Epoxy, Molded
•Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
•Lead Finish: 100% Matte Sn (Tin)
•Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•Device Meets MSL 1 Requirements
Device Package Shipping†
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIERS
5 AMPERES
100 VOLTS
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MARKING
DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTSS5100T3G SMB
(Pb−Free) 2500 /
Tape & Reel
AYWW
TH51G
G
SMB
CASE 403A
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
NTSAF5100T3G SMA−FL
(Pb−Free) 5000 /
Tape & Reel
SMA−FL
CASE 403AA
STYLE 6
H51
AYWWG
NTSS5100, NTSAF5100
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR100
V
Average Rectified Forward Current
(TL = 73°C) IF(AV) 5.0 A
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, TL = 54°C) IFRM 10 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature TJ−55 to +175 °C
ESD Rating (Human Body Model) 1B
ESD Rating (Machine Model) M3
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Maximum Thermal Resistance, Steady State (Note 1) °C/W
(NTSAF5100) Junction−to−Lead RθJL 25
Junction−to−Ambient RθJA 90
(NTSS5100) Junction−to−Lead RθJL 13.1
Junction−to−Ambient RθJA 71.1
1. Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Instantaneous Forward Voltage (Note 1)
(iF = 3.0 Amps, TJ = 25°C)
(iF = 5.0 Amps, TJ = 25°C)
(iF = 3.0 Amps, TJ = 125°C)
(iF = 5.0 Amps, TJ = 125°C)
vF0.56
0.65
0.50
0.56
−
0.69
−
0.61
V
Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
iR2.6
2.2 25
9mA
mA
Diode Capacitance
(Rated dc Voltage, TJ = 25°C, f = 1 MHz) Cd54.4 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.
NTSS5100, NTSAF5100
www.onsemi.com
3
TYPICAL CHARACTERISTICS
1.00.80.60.40.20
0.1
1
10
100
TA = 125°C
TA = −55°C
TA = 25°C
1.2
TA = 150°C
TA = 85°C
Figure 1. Typical Instantaneous Forward
Characteristics Figure 2. Maximum Instantaneous Forward
Characteristics
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)
9070605040302010
Figure 5. Typical Junction Capacitance
VR, REVERSE VOLTAGE (V)
0.1
10
100
1000
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
80 100
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
IR, INSTANTANEOUS REVERSE CURRENT (A)
10 100
TA = 125°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 25°C
Figure 6. Current Derating for NTSS5100
TL, LEAD TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (A)
Square Wave
DC RqJL = 13.1°C/W
TJ = 25°C
TA = 150°C
TA = 85°C
1
1.E−01
0
1
10
100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1
.3
TA = 125°C
TA = −55°C
TA = 25°C
TA = 150°C
TA = 85°C
TA = 85°C
0
1
2
3
4
5
6
7
8
9
0 20 40 60 80 100 120 140
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
10 20 30 40 50 60 70 80 90 1
00
NTSS5100, NTSAF5100
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4
TYPICAL CHARACTERISTICS
18
01234 567
Figure 7. Forward Power Dissipation
IF(AV), Average Forward Current (A)
PF(AV), AVERAGE FORWARD POWER
DISSIPATION (W)
16
14
12
10
8
6
4
2
00
1
2
3
4
5
6
7
8
9
0 20 40 60 80 100 120 140
Figure 8. Current Derating for NTSAF5100
TL, LEAD TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (A)
Square Wave
DC RqJL = 25°C/W
IPK/IAV = 20
IPK/IAV = 10
IPK/IAV = 5
SQUARE WAVE
DC
Figure 9. Typical Transient Thermal Response, Junction−to−Ambient for NTSS5100
t, PULSE TIME (S)
R(t), (°C/W)
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
1
10
100
1000
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
1
10
100
0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 10. Typical Transient Thermal Response, Junction−to−Ambient for NTSAF5100
t, PULSE TIME (S)
R(t), (°C/W)
50% Duty Cycle
20%
10%
5%
2%
1%
NTSS5100, NTSAF5100
www.onsemi.com
5
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
E
bD
c
L1
L
A
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
2.261
0.089
2.743
0.108
2.159
0.085 ǒmm
inchesǓ
SCALE 8:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DIM
AMIN NOM MAX MIN
MILLIMETERS
1.95 2.30 2.47 0.077
INCHES
A1 0.05 0.10 0.20 0.002
b1.96 2.03 2.20 0.077
c0.15 0.23 0.31 0.006
D3.30 3.56 3.95 0.130
E4.06 4.32 4.60 0.160
L0.76 1.02 1.60 0.030
0.091 0.097
0.004 0.008
0.080 0.087
0.009 0.012
0.140 0.156
0.170 0.181
0.040 0.063
NOM MAX
5.21 5.44 5.60 0.205 0.214 0.220
HE
0.51 REF 0.020 REF
D
L1
HE
POLARITY INDICATOR
OPTIONAL AS NEEDED
NTSS5100, NTSAF5100
www.onsemi.com
6
PACKAGE DIMENSIONS
SMA−FL
CASE 403AA
ISSUE O
D
E
b
L
cSOLDER FOOTPRINT*
DIMENSIONS: MILLIMETERS
5.56
1.76
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
1.30
RECOMMENDED
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
DIM MIN MAX
MILLIMETERS
A0.90 1.10
b1.25 1.65
c0.15 0.30
D2.40 2.80
TOP VIEW
E1
BOTTOM VIEW
2X
2X
SIDE VIEW
A
CSEATING
PLANE
E4.80 5.40
E1 4.00 4.60
L0.70 1.10
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NTSS5100E/D
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