FR1AA thru FR1MA
FAST RECOVERY RECTIFIER
REVERSE VOLTAGE – 50 to 100
FORWARD CURRENT – 1.0 Ampere
FEATURES
•
Very low profile package – 0.9mm
•
Glass passivated chip
•
For surface mounted applications
•
Low reverse leakage current
•
Low forward voltage drop
•
High current capability
•
Fast switching for high efficiency
MECHANICAL DATA
•
Case: JEDEC DO-221AC
•
Case Material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. Cl.)
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminals: Lead Free Plating (Matte Tin Finish.)
•
Reliability tested in accordance with AEC-Q101
•
Component in accordance to RoHs 2002/95/EC
SMA FLAT
SMA FLAT
DIM.
MIN. MAX.
A 0.90
1.10
B 1.25
1.65
C 0.15
0.40
D 2.25
2.95
E 4.80
5.60
E1 3.95
4.60
L 0.75
1.50
All dimension in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
°C
ambient temperature unless otherwise specified.
PARAMETER SYMBOL
FR1AA
FR1BA
FR1DA
FR1GA
FR1JA
FR1KA
FR1MA
UNIT
Device marking code Note
FR1AA
FR1BA
FR1DA
FR1GA
FR1JA
FR1KA
FR1MA
---
Maximum Repetitive Peak Reverse Voltage V
RRM
50 100 200 400 600 800 1000 V
Maximum RMS Voltage V
RMS
35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage V
DC
50 100 200 400 600 800 1000 V
Average Rectified Output Current
@T
L
=125°C I
(AV)
1.0 A
Peak Forward Surge Current 8.3ms single half
sine-wave I
FSM
30 A
Operating junction temperature range T
J
-55 to +150 °C
Storage temperature range T
STG
-55 to +150 °C
PARAMETER TEST CONDITIONS
SYMBOL
Max. UNIT
Forward Voltage (1)
IF=1.0A
Tj=25°C V
F
1.3 V
Leakage Current (1)
VR=V
DC
Tj=25°C
Tj=125°C I
R
5
200 uA
Maximum Reverse Recovery Time (Note 2) T
RR
150 250 500 ns
THERMAL CHARACTERISTIC SYMBOL
Typical UNIT
Typical junction capacitance (3) C
J
15 pF
Typical thermal resistance _ Junction to Case (4) R
Θ
JC
26 °C/W
Typical thermal resistance _ Junction to Ambient (4)
R
Θ
JA
85 °C/W
Typical thermal resistance _ Junction to Lead (4) R
Θ
JL
18 °C/W
Note : REV. 3, Sep-2012, KSEP01
(1) 300us Pulse width, 2% Duty cycle.
(2) Reverse Recovery Test Conditions:I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
(3) Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
(4) Thermal Resistance test performed in accordance with JESD-51. Unit mounted on 0.75t glass-epoxy substrate with foot print
pad. R
Θ
JL
is measured at the lead
of cathode band,
R
Θ
JC
is measured at the top centre of body.