NTE2328 (NPN) & NTE2329 (PNP)
Silicon Complementary Transistors
Audio Power Output
Features:
DRecommended for 100W High Fidelity Audio Frequency Amplifier Output Stage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (TC = +25°C), PC150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 200V, IE = 0 – – 5.0 µA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 5.0 µA
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0 200 – – V
DC Current Gain hFE1 VCE = 5V, IC = 1A 55 – 160
hFE2 VCE = 5V, IC = 8A 35 60 –
Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 1A – 1.5 3.0 V
Base–Emitter Voltage VBE VCE = 5V, IC = 8A – 1.0 1.5 V
Transistion Frequency fTVCE = 5V, IC = 1A – 25 – MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz – 470 – pF