BUZ 339 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 339 500 V 11.5 A 0.5 TO-218 AA C67078-S3133-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 33 C Values Unit A 11.5 IDpuls Pulsed drain current TC = 25 C 46 Avalanche current,limited by Tjmax IAR 11.5 Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse EAR 16 mJ EAS ID = 11.5 A, VDD = 50 V, RGS = 25 L = 10.8 mH, Tj = 25 C 790 Gate source voltage VGS Power dissipation Ptot TC = 25 C 20 V W 170 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 0.74 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group C 55 / 150 / 56 1 07/96 BUZ 339 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 500 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS A VDS = 500 V, VGS = 0 V, Tj = 25 C - 0.1 1 VDS = 500 V, VGS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 10 V, ID = 7.5 A Semiconductor Group nA - 2 0.4 0.5 07/96 BUZ 339 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 7.5 A Input capacitance 8 pF - 2200 3000 - 260 400 - 100 150 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 14 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Rise time - 35 50 - 70 100 - 450 680 - 110 160 tr VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Semiconductor Group 3 07/96 BUZ 339 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed - - 46 V 1.1 1.5 trr ns - 450 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 11.5 - VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - VSD VGS = 0 V, IF = 23 A Reverse recovery time - ISM TC = 25 C Inverse diode forward voltage A C - 4 7.6 - 07/96 BUZ 339 Drain current ID = (TC) parameter: VGS 10 V Power dissipation Ptot = (TC) 12 180 A W 10 Ptot ID 140 9 8 120 7 100 6 80 5 60 4 3 40 2 20 0 0 1 0 20 40 60 80 100 120 C 0 160 20 40 60 80 100 120 TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C C 160 TC Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 2 10 0 t = 1.4s p A K/W 10 s ID ZthJC /I D 100 s 10 -1 =V DS 10 1 R DS (o n) 1 ms 10 ms D = 0.50 0.20 10 0 10 -2 0.10 0.05 0.02 single pulse DC 10 -1 0 10 10 1 10 2 0.01 V 10 10 -3 -7 10 3 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 339 Typ. output characteristics ID = (VDS) Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS parameter: tp = 80 s l 26 1.6 Ptot = 170W kj hg f i A e a d 22 ID VGS [V] a 4.0 20 18 c 16 14 12 b 10 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 8 b RDS (on) 1.2 1.0 0.8 c 0.6 9.0 d e g hf ji k 10.0 l 20.0 0.4 6 4 k 0.2 VGS [V] = a a 4.0 4.5 2 0 0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.0 4 8 12 16 20 24 V 30 0 2 4 6 8 10 12 14 VDS 16 A 19 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max parameter: tp = 80 s, VDS2 x ID x RDS(on)max 13 16 A S 11 ID gfs 10 12 9 10 8 7 8 6 5 6 4 4 3 2 2 1 0 0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0 2 4 6 8 A ID 07/96 12 BUZ 339 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 7.5 A, VGS = 10 V 4.6 2.2 V 98% 4.0 RDS (on) 1.8 VGS(th) 1.6 3.6 typ 3.2 1.4 2.8 1.2 2.4 1.0 2.0 98% 0.8 1.6 typ 0.6 1.2 0.4 0.8 0.2 0.4 0.0 -60 0.0 -60 -20 20 2% 60 100 C 160 -20 20 60 100 C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A C IF Ciss 10 0 10 1 Coss 10 -1 10 0 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 339 Avalanche energy EAS = (Tj ) parameter: ID = 11.5 A, VDD = 50 V RGS = 25 , L = 10.8 mH EAS Typ. gate charge VGS = (QGate) parameter: ID puls = 17 A 800 16 mJ V VGS 600 12 500 10 400 8 300 6 200 4 100 2 0,2 VDS max 0 20 0,8 VDS max 0 40 60 80 100 120 C 160 Tj 0 20 40 60 80 100 120 140 nC 170 Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 600 V 580 V(BR)DSS570 560 550 540 530 520 510 500 490 480 470 460 450 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 339 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96