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BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxia l Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 1
November 2014
BC546 / BC547 / BC548 / BC549 / BC550
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier
• High-Voltage: BC546, VCEO = 65 V
• Low-Noise: BC549, BC550
• Complement to BC556, BC557, BC558, BC559, and BC560
Ordering Information
Part Number Marking Package Packing Method
BC546ABU BC546A TO-92 3L Bulk
BC546ATA BC546A TO-92 3L Ammo
BC546BTA BC546B TO-92 3L Ammo
BC546BTF BC546B TO-92 3L Tape and Reel
BC546CTA BC546C TO-92 3L Ammo
BC547ATA BC547A TO-92 3L Ammo
BC547B BC547B TO-92 3L Bulk
BC547BBU BC547B TO-92 3L Bulk
BC547BTA BC547B TO-92 3L Ammo
BC547BTF BC547B TO-92 3L Tape and Reel
BC547CBU BC547C TO-92 3L Bulk
BC547CTA BC547C TO-92 3L Ammo
BC547CTFR BC547C TO-92 3L Tape and Reel
BC548BU B C54 8 TO-92 3L Bulk
BC548BTA BC548B TO-92 3L Ammo
BC548CTA BC548C TO-92 3L Ammo
BC549BTA BC549B TO-92 3L Ammo
BC549BTF BC549B TO-92 3L Tape and Reel
BC549CTA BC549C TO-92 3L Ammo
BC550CBU BC550C TO-92 3L Bulk
BC550CTA BC550C TO-92 3L Ammo
1. Collector 2. Base 3. Emitter
TO-92
1
BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxia l Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
hFE Classification
Symbol Parameter Value Unit
VCBO Collector-Base Voltage BC546 80 VBC547 / BC550 50
BC548 / BC549 30
VCEO Collector-Emitter Voltage BC546 65 VBC547 / BC550 45
BC548 / BC549 30
VEBO Emitter-Base Voltage BC546 / BC547 6 V
BC548 / BC549 / BC550 5
ICCollector Current (DC) 100 mA
PCCollector Power Dissipation 500 mW
TJJunction Temperat ure 150 °C
TSTG Storage Temperature Range -65 to +150 °C
Symbol Parameter Conditions Min. Typ. Max. Unit
ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 15 nA
hFE DC Current Gain VCE = 5 V, IC = 2 mA 110 800
VCE(sat) Collector-Emitter Saturation
Voltage IC = 10 mA, IB = 0.5 mA 90 250 mV
IC = 100 mA, IB = 5 mA 250 600
VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 700 mV
IC = 100 mA, IB = 5 mA 900
VBE(on) Base-Emitter On Voltage VCE = 5 V, IC = 2 mA 580 660 700 mV
VCE = 5 V, IC = 10 mA 720
fTCurrent Gain Bandwidth Product VCE = 5 V, IC = 10 mA,
f = 100 MHz 300 MHz
Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 3.5 6.0 pF
Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 9 pF
NF Noise
Figure
BC546 / BC547 / BC548 VCE = 5 V, IC = 200 μA,
f = 1 kHz, RG = 2 k Ω
2.0 10.0
dB
BC549 / BC550 1.2 4.0
BC549 VCE = 5 V, IC = 200 μA,
RG = 2 kΩ, f = 30 to 15000 MHz 1.4 4.0
BC550 1.4 3.0
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800
BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxia l Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. Transfer Characteristic
Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product
0 2 4 6 8 101214161820
0
20
40
60
80
100
IB = 50μA
IB = 100μA
IB = 150μA
IB = 200μA
IB = 250μA
IB = 300μA
IB = 350μA
IB = 400 μA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
VCE = 5V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
1 10 100 1000
1
10
100
1000
VCE = 5V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000
10
100
1000
10000
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
1 10 100 1000
0.1
1
10
100
f=1MHz
IE = 0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
1
10
100
1000
VCE = 5V
fT, CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxia l Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 4
Physical Dimensions
Figure 7. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type
D
BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxia l Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 5
Physical Dimensions (Continued)
Figure 8. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I72
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