FMM22-06PF - Zilog - Datasheet.Technology

PolarHVTM HiPerFET

N-Channel Power MOSFET

Phase leg Topology

DS100038(09/08)

Symbol Test Conditions Characteristic Values

Min. Typ. Max.

CP Coupling capacitance between shorted 40 pF

pins and mounting tab in the case

dS ,dA pin - pin 1.7 mm

dS ,dA pin - backside metal 5.5 mm

Weight 9 g

FMM22-06PF

Features

zSilicon chip on Direct-Copper Bond

(DCB) substrate

- UL recognized package

- Isolated mounting surface

- 2500V electrical isolation

zAvalanche rated

zLow QG

zLow Drain-to-Tab capacitance

zLow package inductance

Advantages

zLow gate drive requirement

zHigh power density

zFast intrinsic rectifier

zLow drain to ground capacitance

zFast switching

Applications

zDC and AC motor drives

zUPS, solar and wind power inverters

zSynchronous rectifiers

zMulti-phase DC to DC converters

zIndustrial battery chargers

zSwitching power supplies

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 600 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ 600 V

VGSS Continuous ± 30 V

VGSM Transient ± 40 V

ID25 TC= 25°C 12 A

IDM TC= 25°C, pulse width limited by TJM 66 A

IATC= 25°C 22 A

EAS TC= 25°C 1.0 J

dV/dt IS≤ IDM, VDD ≤ VDSS,T

J ≤ 150°C 10 V/ns

PDTC= 25°C 130 W

Advance Technical Information

Symbol Test Conditions Maximum Ratings

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

VISOLD 50/60HZ, RMS, t = 1min, leads-to-tab 2500 ~V

TL 1.6mm (0.062 in.) from case for 10s 300 °C

TSOLD Plastic body for 10s 260 °C

FC Mounting force 20..120 / 4.5..27 N/lb.

VDSS = 600V

ID25 = 12A

RDS(on) ≤≤

≤≤

≤ 350mΩΩ

ΩΩ

trr(max) ≤≤

≤≤

≤ 200ns

2ISOPLUS i4-PakTM

Isolated Tab

IXYS reserves the right to change limits, test conditions, and dimensions.

FMM22-06PF

ISOPLUS i4-PakTM Outline

Ref: IXYS CO 0077 R0

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions2 Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250μA 600 V

VGS(th) VDS = VGS, ID = 1mA 3.0 5.0 V

IGSS VGS = ±30 V, VDS = 0V ± 100 nA

IDSS VDS = VDSS 25 μA

VGS = 0V TJ = 125°C 250 μA

RDS(on) VGS = 10V, ID = 11A, Note 1 350 mΩ

gfs VDS = 20V, ID = 11A, Note 1 15 20 S

Ciss 3600 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 305 pF

Crss 38 pF

td(on) Resistive Switching Times 20 ns

trVGS = 10V, VDS = 0.5 z VDSS, ID = 11A 20 ns

td(off) RG = 4Ω (External) 60 ns

tf 23 ns

Qg(on) 58 nC

Qgs VGS= 10V, VDS = 0.5 z VDSS, ID = 11A 20 nC

Qgd 22 nC

RthJC 0.95 °C/W

RthCS 0.15 °C/W

Source-Drain Diode Characteristic Values

TJ = 25°C unless otherwise specified)

Symbol Test Conditions3Min. Typ. Max.

ISVGS = 0V 12 A

ISM Repetitive, pulse width limited by TJM 66 A

VSD IF = 22A, VGS = 0V, Note 1 1.5 V

trr 200 ns

QRM 1.0 μC

Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experience,

and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IF = 22A, -di/dt = 100A/μs

VR = 100V, VGS = 0V