PolarTM Power MOSFET HiperFETTM IXFA12N50P IXFP12N50P VDSS ID25 RDS(on) = 500V = 12A 500m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 12 A IDM TC = 25C, pulse width limited by TJM 30 A IA EAS TC = 25C TC = 25C 12 600 A mJ dV/dt IS IDM, VDD VDSS, TJ 150C 20 V/ns PD TC = 25C 200 W -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg TO-263 (IXFA) TL 1.6mm (0.062) from case for 10s 300 C TSOLD Plastic body for 10s 260 C Md Mounting torque 1.13 / 10 Nm/lb.in. Weight TO-263 TO-220 2.5 3.0 g g (TO-220) G S (TAB) TO-220 (IXFP) G (TAB) D S G = Gate S = Source D = Drain TAB = Drain Features z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 500 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 z z Easy to mount Space savings High power density V 5.5 V 100 nA TJ = 125C (c) 2008 IXYS CORPORATION, All rights reserved 5 250 A A 500 m DS99436F(04/08) IXFA12N50P IXFP12N50P Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS = 20V, ID = 0.5 * ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz 13 S 1830 182 16 pF pF pF Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 50 (External) 22 27 65 20 ns ns ns ns Qg(on) Qgs Qgd VGS= 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 29 11 10 nC nC nC RthJC RthCS (TO-220) 0.50 0.62 C/W C/W td(on) tr td(off) tf 7.5 TO-220 (IXFP) Outline Source-Drain Diode Pins: 1 - Gate 2 - Drain Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 12 A ISM Repetitive, pulse width limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 6A, -di/dt = 150A/s, VR = 100V, VGS = 0V 2.8 18.2 300 ns C A TO-263 (IXFA) Outline Note 1: Pulse test, t 300 s; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA12N50P IXFP12N50P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25C @ 25C 12 30 VGS = 10V 8V 24 21 8 7V I D - Amperes I D - Amperes VGS = 10V 27 10 6 4 18 15 7V 12 9 6 2 6V 6V 3 0 0 0 1 2 3 4 5 6 7 0 3 6 9 V D S - Volts 18 21 24 27 30 Fig. 4. RDS(on) Normalized to I D = 6A Value vs. Junction Temperature @ 125C 12 2.6 VGS = 10V 2.4 7V 8 6 6V 4 VGS = 10V 2.2 R D S ( o n ) - Normalized 10 I D - Amperes 15 V D S - Volts Fig. 3. Output Characteristics 2.0 1.8 1.6 ID = 12A 1.4 ID = 6A 1.2 1.0 0.8 2 5V 0.6 0 0.4 0 2 4 6 8 10 12 -50 -25 VD S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to I D = 6A Value vs. Drain Current Fig. 6. Drain Curre nt v s. Case Te mpe rature 14 3.4 12 VGS = 10V 3.0 TJ = 125 C 10 2.6 I D - Amperes R D S ( o n ) - Normalized 12 2.2 1.8 TJ = 25 C 1.4 8 6 4 1.0 2 0.6 0 0 3 6 9 12 I D 15 18 - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 21 24 27 30 -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 IXFA12N50P IXFP12N50P Fig. 8. Transconductance 20 27 18 24 16 21 14 g f s - Siemens I D - Amperes Fig. 7. Input Admittance 12 TJ = 125 C 10 25C - 40C 8 18 TJ = - 40C 15 25C 125C 12 9 6 6 4 3 2 0 0 4.5 5.0 5.5 6.0 VG S 6.5 7.0 0 7.5 2 4 8 I Fig. 9. Source Current vs. Source-To-Drain Voltage D 10 12 16 18 20 24 27 30 10 30 VG S - Volts 25 20 15 TJ = 125 C 9 VDS = 250V 8 ID = 6A 7 IG = 10m A 6 5 4 3 10 2 TJ = 25C 5 1 0 0 0.4 0.5 0.6 0.7 VS D 0.8 0.9 0 1.0 - Volts 3 6 9 12 Q - nanoCoulombs G 15 18 21 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10000 100 f = 1MHz TJ = 150C Ciss RDS(on) Limit I D - Amperes Capacitance - picoFarads 14 - Amperes Fig. 10. Gate Charge 35 I S - Amperes 6 - Volts 1000 Coss TC = 25C 25s 10 100 100s 1m s Crss DC 10 1 0 5 10 15 20 25 30 35 40 VD S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 10ms 1000 IXFA12N50P IXFP12N50P Fig. 13. Maximum Transient Thermal Impedance Z ( t h ) J C - C / W 1.00 0.10 0.01 0.01 0.1 1 10 100 1000 Pulse Width - milliseconds (c) 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_12N50P(4J)4-14-08-D