IRANSYS BC846A - BC848C ELECTRONICS LIMITED NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary PNP Types Available (BC856-BC858) For Switching and AF Amplifier Applications Mechanical Data Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Pin Connections and Marking Codes (See Table & Diagram) Approx. Weight: 0.008 grams Mounting Position: Any Marking Code Type Marking Type Marking BC846A 1A BC847C 1G BC846B 1B BC848A 1J BC847A 1E BC848B 1K BC847B 1F BC848C iL a ea [q] TOP] VIEW al 7 ne kK ai L alee SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 Cc 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G 1.78 2.05 H 2.65 3.05 J 0.013 0.15 K 0.89 1.10 L 0.45 0.61 M 0.076 | 0.178 All Dimensions in mm Maximum Ratings @ Ta= 25C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage BC846 80 BC847 VoBo 50 Vv BC848 30 Collector-Emitter Voltage BC846 65 BC847 VcEO 45 Vv BC848 30 Emitter-Base Voltage BC846, BC847 Vv 6.0 Vv BC848 EBO 5.0 Collector Current Ic 100 mA Peak Collector Current Iom 200 mA Peak Emitter Current lem 200 mA Power Dissipation at Tsp = 50C (Note 1) Pg 310 mw Operating and Storage Temperature Range Tj, Tsta -65 to +150 C Notes: 2. Current gain subgroup C is not available for BC846. 1. Device mounted on ceramic substrate 0.7mm x 2.5cm? area.Electrical Characteristics @ Ta= 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition h-Parameters (Note 2) Small Signal Current Gain Current Gain Group A B hte 220 Cc Nie 330 Input Impedance Current Gain Group A he 16 gee 45 k Cc hie 3.2 4.5 8.5 k Voce = 5.0V, Ic = 2.0mA, Output Admittance Current Gain Group A hie 6.0 8.7 15 k f= 1.0kHz B Noe _ 18 30 ys C Noe _ 30 60 us Reverse Voltage Transfer Ratio Current Gain Group Noe _ 60 110 yS A re _ 1.5x10 _ _ B re 2x104 C re _ 3x10-4 DC Current Gain Current Gain Group A _ 90 Vce = 5.0V, Ic = 10UA B _ 150 _ CE me H Cc Nre _ 270 _ _ Current Gain Group A 110 180 220 B 200 290 450 Voce = 5.0V, Ic = 2.0mMA (Note 2) C 420 520 800 Thermal Resistance, Junction to Substrate Backside R ss _ _ 320 KAW Note 1 Thermal Resistance, Junction to Ambient Air R va _ _ 400 KAW Note 1 Collector-Emitter Saturation Voltage Vv _ 90 250 mV Io = 10mA, Ip = 0.5mA CE(SAT) 200 600 le = 100mA, Ip = 5.0MA Base-Emitter Saturation Voltage Vpesat) | jou mv IC = iON i Som A i 580 660 700 Voce = 5.0V, Ic = 2.0mMA Base-Emitter Voltage VBE _ _ 790 mV Vee =5.0V, lo = 10mA Collector-Emitter Cutoff Current BC846 Ices 0.2 15 nA Voce = 80V BC847 Ices 0.2 15 nA Voce = 50V BC848 Ices 0.2 15 nA Vce = 30V . BC846 Ices _ 4.0 pA Voce = 80V, Tj = 125C BC847 Ices _ 4.0 LA Voce = 50V, Tj = 125C BC848 Ices 4.0 yA Voce = 30V, Tj = 125C IcBo 15 nA Vcp = 30V IcBo _ 5.0 yA Vos = 30V, Tj = 125C . . Voce = 5.0V, Ic = 10mA, Gain Bandwidth Product fT 300 MHz f= 100MHz Collector-Base Capacitance Ccso _ 3.5 6.0 pF Vos = 10V, f = 1.0MHz Emitter-Base Capacitance Ceso 9.0 _ pF Vep = 0.5V, f = 1.0MHz Voce = 5V, Ic = 200HA, Noise Figure NF _ 2.0 10 dB Re = 2.0k f=1.0kHz, f= 200Hz Notes: 1. Device mounted on ceramic substrate 0.7mm x 2.5cm? area. 2. Current gain subgroup C is not available for BC846.Py, POWER DISSIPATION (mW) Voge, COLLECTOR SATURATION VOLTAGE (V) Notes: 500 400 300 200 100 0 0 100 200 Tgg, SUBSTRATE TEMPERATURE ( C) Fig. 1, Power Derating Curve 0.5 0.4 0.3 0.2 0.1 0 0.1 1.0 10 100 Io, COLLECTOR CURRENT (mA) Fig. 3, Collector Saturation Voltage vs Collector Current 1. Device mounted on ceramic substrate 0.7mm x 2.5cm? area 1000 2 <x 100 kK z im a a i) oO Oo a ui 10 x= 1 0.01 0.1 1.0 10 100 Io, COLLECTOR CURRENT (mA) Fig. 2, DC Current Gain vs Collector Current 1000 100 f;, GAIN BANDWIDTH PRODUCT (MHz) 10 0.1 1.0 10 100 Ic, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current