1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
12 01.11.2003
12
3
Type
Code
2.1
±0.1
2
±0.1
1
±0.1
1.25
±0. 1
0.3
1.3
BC 846W ... BC 850W General Purpose Transistors
NPN Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN
Power dissipation – Verlustleistung 200 mW
Plastic case SOT-323
Kunststoffgehäuse
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BC 846W BC 847W
BC 850W
BC 848W
BC 849W
Collector-Emitter-voltage B open VCE0 65 V 45 V 30 V
Collector-Base-voltage E open VCB0 80 V 50 V 30 V
Emitter-Base-voltage C open VEB0 6 V 5 V
Power dissipation – Verlustleistung Ptot 200 mW 1)
Collector current – Kollektorstrom (DC) IC100 mA
Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA
Peak Base current – Basis-Spitzenstrom IBM 200 mA
Peak Emitter current – Emitter-Spitzenstrom - IEM 200 mA
Junction temperature – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Group A Group B Group C
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 5 V, IC = 10 :Ah
FE typ. 90 typ. 150 typ. 270
VCE = 5 V, IC = 2 mA hFE 110...220 200...450 420...800
h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz
Small signal current gain – Stromverstärkung hfe typ. 220 typ. 330 typ. 600
Input impedance – Eingangs-Impedanz hie 1.6...4.5 kS3.2...8.5 kS6...15 kS
Output admittance – Ausgangs-Leitwert hoe 18 < 30 :S 30 < 60 :S 60 < 110 :S
Reverse voltage transfer ratio
Spannungsrückwirkung hre typ.1.5 *10-4 typ. 2 *10-4 typ. 3 *10-4
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
13
01.11.2003
General Purpose Transistors BC 846W ... BC 850W
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector saturation volt. – Kollektor-Sättigungsspannung 1)
IC = 10 mA, IB = 0.5 mA VCEsat – 90 mV 250 mV
IC = 100 mA, IB = 5 mA VCEsat – 200 mV 600 mV
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 10 mA, IB = 0.5 mA VBEsat – 700 mV –
IC = 100 mA, IB = 5 mA VBEsat – 900 mV –
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 5 V, IC = 2 mA VBEon 580 mV 660 mV 700 mV
VCE = 5 V, IC = 10 mA VBEon – – 770 mV
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 30 V ICB0 – – 15 nA
IE = 0, VCB = 30 V, Tj = 150/CI
CB0 ––5 :A
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V IEB0 – – 100 nA
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz fT100 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – 3.5 pF 6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 – 9 pF –
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 :A
RG = 2 kS, f = 1 kHz,
)f = 200 Hz
BC 846W...
BC 848W F – 2 dB 10 dB
BC 849W...
BC 850W F 1.2 dB 4 dB
VCE = 5 V, IC = 200 :A
RG = 2 kS, f = 1 kHz,
f = 30 ... 15000 Hz
BC 849W F– 1.4 dB 4 dB
BC 850W F – 1.4 dB 4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 620 K/W 2)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren BC 856W ... BC 860W
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
BC 846AW = 1A BC 846BW = 1B
BC 847AW = 1E BC 847BW = 1F BC 847CW = 1G
BC 848AW = 1J BC 848BW = 1K BC 848CW = 1L
BC 849BW = 2B BC 849CW = 2C
BC 850BW = 2F BC 850CW = 2G
